SUMMARY
V
(BR)DSS
=30V; R
DS(ON)
=0.12
I
D
=2.0A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Motor control
DEVICE MARKING
7N3
ZXMN3A01F
ISSUE 1 - MARCH 2002
1
30V N-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3A01FTA
7"
12mm
1000 units
ZXMN3A01FTC
13"
12mm
4000 units
ORDERING INFORMATION
Top View
SOT23
ZXMN3A01F
ISSUE 1 - MARCH 2002
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
200
C/W
Junction to Ambient (b)
R
JA
155
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDSS
30
V
Gate Source Voltage
VGS
20
V
Continuous Drain Current VGS=10V; TA=25C (b)
VGS=10V; TA=70C (b)
VGS=10V; TA=25C (a)
ID
2.0
1.64
1.81
A
Pulsed Drain Current (c)
IDM
8
A
Continuous Source Current (Body Diode) (b)
IS
1.3
A
Pulsed Source Current (Body Diode) (c)
ISM
8
A
Power Dissipation at TA=25C (a)
Linear Derating Factor
PD
625
5
W
mW/C
Power Dissipation at TA=25C (b)
Linear Derating Factor
PD
806
6.4
W
mW/C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS.
ZXMN3A01F
ISSUE 1 - MARCH 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
30
V
ID=250
A, VGS=0V
Zero Gate Voltage Drain Current
IDSS
0.5
A
VDS=30V, VGS=0V
Gate-Body Leakage
IGSS
100
nA
VGS= 20V, VDS=0V
Gate-Source Threshold Voltage
VGS(th)
1
V
I
D
=250
A, VDS= VGS
Static Drain-Source On-State Resistance
(1)
RDS(on)
0.106
0.12
0.18
VGS=10V, ID=2.5A
VGS=4.5V, ID=2.0A
Forward Transconductance (1)(3)
gfs
3.5
S
VDS=4.5V,ID=2.5A
DYNAMIC (3)
Input Capacitance
Ciss
190
pF
VDS=25 V, VGS=0V,
f=1MHz
Output Capacitance
Coss
38
pF
Reverse Transfer Capacitance
Crss
20
pF
SWITCHING(2) (3)
Turn-On Delay Time
td(on)
1.7
ns
VDD =15V, ID=2.5A
RG=6.0
, VGS=10V
Rise Time
tr
2.3
ns
Turn-Off Delay Time
td(off)
6.6.
ns
Fall Time
tf
2.9
ns
Gate Charge
Qg
2.3
nC
VDS=15V,VGS=5V,
I
D
=2.5A
Total Gate Charge
Qg
3.9
nC
VDS=15V,VGS=10V,
I
D
=2.5A
Gate-Source Charge
Qgs
0.6
nC
Gate-Drain Charge
Qgd
0.9
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
VSD
0.85
0.95
V
TJ=25C, IS=1.7A,
VGS=0V
Reverse Recovery Time (3)
trr
17.7
ns
TJ=25C, IF=2.5A,
di/dt= 100A/
s
Reverse Recovery Charge (3)
Qrr
13.0
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
=
300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PDF 
ZIP
