SUMMARY
V
(BR)DSS
= 40V; R
DS(ON)
= 0.05
I
D
= 7A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
APPLICATIONS
DC - DC Converters
Audio Output Stages
Relay and Solenoid driving
Motor control
DEVICE MARKING
ZXMN
4A06
ZXMN4A06G
ISSUE 1 - MAY 2002
40V N-CHANNEL ENHANCEMENT MODE MOSFET
1
Top View
SOT223
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN4A06GTA
7"
12mm
1000 units
ZXMN4A06GTC
13"
12mm
4000 units
ORDERING INFORMATION
ZXMN4A06G
ISSUE 1 - MAY 2002
2
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
40
V
Gate-Source Voltage
V
GS
20
V
Continuous Drain Current V
GS
=10V; T
A
=25C(b)
V
GS
=10V; T
A
=70C(b)
V
GS
=10V; T
A
=25C(a)
I
D
7.0
5.6
5.0
A
Pulsed Drain Current (c)
I
DM
22
A
Continuous Source Current (Body Diode) (b)
I
S
5.4
A
Pulsed Source Current (Body Diode)(c)
I
SM
22
A
Power Dissipation at T
A
=25C (a)
Linear Derating Factor
P
D
2.0
16
W
mW/C
Power Dissipation at T
A
=25C (b)
Linear Derating Factor
P
D
3.9
31
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
62.5
C/W
Junction to Ambient (b)
R
JA
32.2
C/W
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FRA PCB, D=0.05 pulse width = 10 s - pulse width limited by maximum junction temperature.
ZXMN4A06G
ISSUE 1 - MAY 2002
3
1
10
10m
100m
1
10
Single Pulse
T
amb
= 25 C
R
DS(on)
Limited
100s
1ms
10ms
100ms
1s
DC
Safe Operating Area
I
D
D
r
a
i
n
C
urre
nt
(
A
)
V
DS
Drain-Source Voltage (V)
0
20
40
60
80 100 120 140 160
0.0
0.4
0.8
1.2
1.6
2.0
Derating Curve
Temperature ( C)
M
a
x
P
ow
e
r
D
i
s
s
i
pa
t
i
on
(
W
)
100 1m 10m 100m
1
10
100
1k
0
10
20
30
40
50
60
70
T
amb
= 25 C
Transient Thermal Impedance
D= 0.5
D= 0.2
D= 0.1
Single Pulse
D= 0.05
T
h
er
m
a
l
R
es
i
s
t
a
n
c
e
(
C
/
W
)
Pulse Width (s)
100 1m 10m 100m
1
10
100
1k
1
10
100
Single Pulse
T
amb
= 25 C
Pulse Power Dissipation
Pulse Width (s)
M
axi
m
u
m
P
o
w
er
(
W
)
CHARACTERISTICS
ZXMN4A06G
ISSUE 1 - MAY 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
40
V
I
D
=250 A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1
A
V
DS
=40V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
1.0
V
I
D
=250 A, V
DS
= V
GS
Static Drain-Source On-State
Resistance (1)
R
DS(on)
0.050
0.075
V
GS
=10V, I
D
=4.5A
V
GS
=4.5V, I
D
=3.2A
Forward Transconductance (3)
g
fs
8.7
S
V
DS
=15V,I
D
=2.5A
DYNAMIC (3)
Input Capacitance
C
iss
770
pF
V
DS
=40 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
92
pF
Reverse Transfer Capacitance
C
rss
61
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
2.55
ns
V
DD
=30V, I
D
=2.5A
R
G
=6.0 , V
GS
=10V
(refer to test circuit)
Rise Time
t
r
4.45
ns
Turn-Off Delay Time
t
d(off)
28.61
ns
Fall Time
t
f
7.35
ns
Total Gate Charge
Q
g
18.2
nC
V
DS
=30V,V
GS
=10V,
I
D
=2.5A
(refer to test circuit)
Gate-Source Charge
Q
gs
2.1
nC
Gate-Drain Charge
Q
gd
4.5
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.8
0.95
V
T
J
=25C, I
S
=2.5A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
19.86
ns
T
J
=25C, I
F
=2.5A,
di/dt= 100A/
s
Reverse Recovery Charge (3)
Q
rr
16.36
nC
ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN4A06G
ISSUE 1 - MAY 2002
5
0.1
1
10
0.1
1
10
0.1
1
10
0.1
1
10
1
2
3
4
1
10
-50
0
50
100
150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
10
0.1
1
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
10V
2.5V
4V
V
GS
3.5V
2V
3V
Output Characteristics
T = 25 C
V
GS
I
D
D
r
a
i
n
C
urre
nt
(
A
)
V
DS
Drain-Source Voltage (V)
10V
4V
3V
2V
1.5V
3.5V
2.5V
Output Characteristics
T = 150 C
I
D
D
r
a
i
n
C
urre
nt
(
A
)
V
DS
Drain-Source Voltage (V)
Typical Transfer Characteristics
V
DS
= 10V
T = 25 C
T = 150 C
I
D
D
r
a
i
n
C
urre
nt
(
A
)
V
GS
Gate-Source Voltage (V)
Normalised Curves v Temperature
R
DS(on)
V
GS
= 10V
I
D
= 4.5A
V
GS(th)
V
GS
= V
DS
I
D
= 250uA
N
o
rm
a
lis
e
d
R
D
S
(
on)
an
d
V
GS
(
t
h
)
Tj Junction Temperature ( C)
10V
4V
2.5V
1.5V
3.5V
3V
2V
On-Resistance v Drain Current
T = 25 C
V
GS
R
D
S
(
on)
D
r
a
i
n-
S
ourc
e
O
n
-
R
e
s
is
t
a
nc
e
(
)
I
D
Drain Current (A)
T = 150 C
T = 25 C
Source-Drain Diode Forward Voltage
V
SD
Source-Drain Voltage (V)
I
SD
R
e
v
e
rs
e
D
ra
in
C
u
rre
nt
(
A
)
TYPICAL CHARACTERISTICS
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