SUMMARY
V
(BR)DSS
=60V; R
DS(ON)
=0.4
I
D
=1A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilises a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Relay and Solenoid driving
Motor control
DEVICE MARKING
7N6
ZXMN6A07F
ISSUE 1 - MARCH 2002
60V N-CHANNEL ENHANCEMENT MODE MOSFET
1
Top View
SOT23
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN6A07FTA
7"
8mm
3000 units
ZXMN6A07FTC
13"
8mm
10000 units
ORDERING INFORMATION
ZXMN6A07F
ISSUE 1 - MARCH 2002
2
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGS
20
V
Continuous Drain Current VGS=10V; TA=25C(b)
VGS=10V; TA=70C(b)
VGS=10V; TA=25C(a)
ID
1.0
0.84
0.93
A
Pulsed Drain Current (c)
IDM
4
A
Continuous Source Current (Body Diode) (b)
IS
1
A
Pulsed Source Current (Body Diode)(c)
ISM
4
A
Power Dissipation at TA=25C (a)
Linear Derating Factor
PD
625
5
mW
mW/C
Power Dissipation at TA=25C (b)
Linear Derating Factor
PD
806
6.4
mW
mW/C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
200
C/W
Junction to Ambient (b)
R
JA
155
C/W
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PC, D =0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to Transient
Thermal Impedance graph.
ZXMN6A07F
ISSUE 1 - MARCH 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
60
V
ID=250
A, VGS=0V
Zero Gate Voltage Drain Current
IDSS
1
A
VDS=60V, VGS=0V
Gate-Body Leakage
IGSS
100
nA
VGS=
20V, VDS=0V
Gate-Source Threshold Voltage
VGS(th)
1.0
3.0
V
I
D
=250
A, VDS= VGS
Static Drain-Source On-State
Resistance (1)
RDS(on)
0.3
0.40
0.55
VGS=10V, ID=1.8A
VGS=4.5V, ID=1.3A
Forward Transconductance (3)
gfs
2.3
S
VDS=15V,ID=1.8A
DYNAMIC (3)
Input Capacitance
Ciss
166
pF
VDS=40 V, VGS=0V,
f=1MHz
Output Capacitance
Coss
19.5
pF
Reverse Transfer Capacitance
Crss
8.7
pF
SWITCHING(2) (3)
Turn-On Delay Time
td(on)
1.8
ns
VDD =30V, ID=1.8A
RG=6.0
, VGS=10V
Rise Time
tr
1.4
ns
Turn-Off Delay Time
td(off)
4.9
ns
Fall Time
tf
2.0
ns
Gate Charge
Qg
1.65
nC
VDS=30V, VGS=5V,
ID=1.8A
Total Gate Charge
Qg
3.2
nC
VDS=30V,VGS=10V,
I
D
=1.8A
Gate-Source Charge
Qgs
0.67
nC
Gate-Drain Charge
Qgd
0.82
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
VSD
0.8
0.95
V
TJ=25C, IS=0.45A,
VGS=0V
Reverse Recovery Time (3)
trr
20.5
ns
TJ=25C, IF=1.8A,
di/dt= 100A/
s
Reverse Recovery Charge (3)
Qrr
21.3
nC
ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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