1
S E M I C O N D U C T O R S
SUMMARY
V
(BR)DSS
= - 100V : R
DS
(
on
)= 1
; I
D
= - 0.7A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
DC-DC Converters
Power Management functions
Disconnect switches
Motor control
DEVICE MARKING
7P1
ZXMP10A13F
ISSUE 1 - MARCH 2005
100V P-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP10A13FTA
7"
8mm
3000 units
ZXMP10A13FTC
13"
8mm
10000units
ORDERING INFORMATION
PINOUT
SOT23
ZXMP10A13F
S E M I C O N D U C T O R S
ISSUE 1 - MARCH 2005
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)
R
JA
200
C/W
Junction to Ambient
(b)
R
JA
155
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
5 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
-100
V
Gate-Source Voltage
V
GS
20
V
Continuous Drain Current @ V
GS
=10V; T
A
=25C
(b)
@V
GS
=10V; T
A
=70C
(b)
@ V
GS
=10V; T
A
=25C
(a)
I
D
-0.7
-0.5
-0.6
A
A
A
Pulsed Drain Current
(c)
I
DM
-3.1
A
Continuous Source Current (Body Diode)
(b)
I
S
-1.1
A
Pulsed Source Current (Body Diode)
(c)
I
SM
-3.1
A
Power Dissipation at T
A
=25C
(a)
Linear Derating Factor
P
D
625
5
mW
mW/C
Power Dissipation at T
A
=25C
(b)
Linear Derating Factor
P
D
806
6.4
mW
mW/C
Operating and Storage Temperature Range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZXMP10A13F
S E M I C O N D U C T O R S
ISSUE 1 - MARCH 2005
3
CHARACTERISTICS
ZXMP10A13F
S E M I C O N D U C T O R S
ISSUE 1 - MARCH 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-100
V
I
D
= -250 A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1.0
A
V
DS
= -100V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-2.0
-4.0
V
I
D
= -250 A, V
DS
=V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
1
1.45
V
GS
= -10V, I
D
= -0.6A
V
GS
= -6V, I
D
= -0.5A
Forward Transconductance
(1)(3)
g
fs
1.2
S
V
DS
= -15V, I
D
= -0.6A
DYNAMIC
(3)
Input Capacitance
C
iss
141
pF
V
DS
= -50V, V
GS
=0V
f=1MHz
Output Capacitance
C
oss
13.1
pF
Reverse Transfer Capacitance
C
rss
10.8
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
1.6
ns
V
DD
= -50V, I
D
= -1A
R
G
6.0 , V
GS
= -10V
Rise Time
t
r
2.1
ns
Turn-Off Delay Time
t
d(off)
5.9
ns
Fall Time
t
f
3.3
ns
Gate Charge
Q
g
1.8
nC
V
DS
= -50V, V
GS
= -5V
I
D
= -0.6A
Total Gate Charge
Q
g
3.5
nC
V
DS
= -50V, V
GS
= -10V
I
D
= -0.6A
Gate-Source Charge
Q
gs
0.6
nC
Gate-Drain Charge
Q
gd
1.6
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
-0.85
-0.95
V
T
j
=25C, I
S
= -0.75A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
29
ns
T
j
=25C, I
S
= -0.9A,
di/dt=100A/ s
Reverse Recovery Charge
(3)
Q
rr
31
nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
300ms; duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP10A13F
S E M I C O N D U C T O R S
ISSUE 1 - MARCH 2005
5
TYPICAL CHARACTERISTICS
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