1
S E M I C O N D U C T O R S
SUMMARY
V
(BR)DSS
= -100V: R
DS(ON)
= 0.350 ; I
D
= -1.4A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes them
ideal for high efficiency, low voltage power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
APPLICATIONS
DCDC Converters
Power Management functions
Disconnect switches
Motor control
DEVICE MARKING
1A17
ZXMP10A17E6
ISSUE 2 - SEPTEMBER 2005
100V P-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP10A17E6TA
7"
8mm
3000 units
ZXMP10A17E6TC
13"
8mm
10000 units
ORDERING INFORMATION
Top View
PINOUT
SOT23-6
ZXMP10A17E6
S E M I C O N D U C T O R S
ISSUE 2 - SEPTEMBER 2005
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
113
C/W
Junction to Ambient (b)
R
JA
73
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
-100
V
Gate-Source Voltage
V
GS
20
V
Continuous Drain Current @ V
GS
=10V; T
A
=25C (b)
@ V
GS
=10V; T
A
=70C (b)
@ V
GS
=10V; T
A
=25C (a)
I
D
-1.6
-1.3
-1.3
A
Pulsed Drain Current (c)
I
DM
-7.7
A
Continuous Source Current (Body Diode) (b)
I
S
-2.1
A
Pulsed Source Current (Body Diode) (c)
I
SM
-7.7
A
Power Dissipation at T
A
=25C (a)
Linear Derating Factor
P
D
1.1
8.8
W
mW/C
Power Dissipation at T
A
=25C (b)
Linear Derating Factor
P
D
1.7
13.6
W
mW/C
Operating and Storage Temperature Range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZXMP10A17E6
S E M I C O N D U C T O R S
ISSUE 2 - SEPTEMBER 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-100
V
I
D
= -250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1.0
A
V
DS
= -100V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-2.0
-4.0
V
I
D
= -250
A, V
DS
=V
GS
Static Drain-Source On-State
Resistance (1)
R
DS(on)
0.350
0.450
V
GS
= -10V, I
D
= -1.4A
V
GS
= -6V, I
D
= -1.2A
Forward Transconductance (1)(3)
g
fs
2.8
S
V
DS
= -15V, I
D
= -1.4A
DYNAMIC (3)
Input Capacitance
C
iss
424
pF
V
DS
= -50V, V
GS
=0V
f=1MHz
Output Capacitance
C
oss
36.6
pF
Reverse Transfer Capacitance
C
rss
29.8
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
3.0
ns
V
DD
= -50V, I
D
= -1A
R
G
6.0, V
GS
= -10V
Rise Time
t
r
3.5
ns
Turn-Off Delay Time
t
d(off)
13.4
ns
Fall Time
t
f
7.2
ns
Gate Charge
Q
g
6.1
nC
V
DS
= -50V, V
GS
= -5V
I
D
= -1.4A
Total Gate Charge
Q
g
10.7
nC
V
DS
= -50V, V
GS
= -10V
I
D
= -1.4A
Gate-Source Charge
Q
gs
1.7
nC
Gate-Drain Charge
Q
gd
3.8
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
-0.85
-0.95
V
T
j
=25
C, I
S
= -1.7A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
33
ns
T
j
=25
C, I
S
= -1.5A,
di/dt=100A/
s
Reverse Recovery Charge (3)
Q
rr
48
nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
=300s. Duty cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PDF 
ZIP
