SUMMARY
V
(BR)DSS
= -30V: R
DS(on)
= 0.045 : I
D
= -7.5A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
APPLICATIONS
DC-DC converters
Power management functions
Relay and soleniod driving
Motor control
DEVICE MARKING
ZXMP
3A16
ZXMP3A16G
1
30V P-CHANNEL ENHANCEMENT MODE MOSFET
ISSUE 2 - JULY 2004
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP3A16GTA
7"
12mm
1000 units
ZXMP3A16GTC
13"
12mm
4000 units
ORDERING INFORMATION
Top View
PINOUT
SOT223
ZXMP3A16G
2
ISSUE 2 - JULY 2004
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
-30
V
Gate-Source Voltage
V
GS
20
V
Continuous Drain Current (V
GS
= -10V; T
A
=25C)(b)
(V
GS
= -10V; T
A
=70C)(b)
(V
GS
= -10V; T
A
=25C)(a)
I
D
-7.5
-6.0
-5.4
A
Pulsed Drain Current (c)
I
DM
-24.9
A
Continuous Source Current (Body Diode) (b)
I
S
-3.2
A
Pulsed Source Current (Body Diode)(c)
I
SM
-24.9
A
Power Dissipation at T
A
=25C (a)
Linear Derating Factor
P
D
2.0
16
W
mW/C
Power Dissipation at T
A
=25C (b)
Linear Derating Factor
P
D
3.9
31
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
62.5
C/W
Junction to Ambient (b)
R
JA
32.2
C/W
THERMAL RESISTANCE
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ZXMP3A16G
3
ISSUE 2 - JULY 2004
1
10
10m
100m
1
10
Single Pulse
T
amb
=25C
R
DS(on)
Limited
100s
1ms
10ms
100ms
1s
DC
Safe Operating Area
-I
D
D
r
a
i
n
C
u
rre
n
t
(
A
)
-V
DS
Drain-Source Voltage (V)
0
20
40
60
80
100 120 140 160
0.0
0.4
0.8
1.2
1.6
2.0
Derating Curve
Temperature (C)
M
a
x
Pow
e
r
D
i
s
s
i
pa
t
i
on
(
W
)
100
1m
10m 100m
1
10
100
1k
0
10
20
30
40
50
60
70
T
amb
=25C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
h
e
r
m
a
l
R
e
si
st
a
n
ce
(
C
/
W
)
Pulse Width (s)
100
1m
10m 100m
1
10
100
1k
1
10
100
Single Pulse
T
amb
=25C
Pulse Power Dissipation
Pulse Width (s)
M
axi
m
u
m
P
o
w
er
(
W
)
TYPICAL CHARACTERISTICS
ZXMP3A16G
ISSUE 2 - JULY 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-30
V
I
D
=-250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1
A
V
DS
=-30V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-1.0
V
I
D
=-250 A, V
DS
= V
GS
Static Drain-Source On-State Resistance (1)
R
DS(on)
0.045
0.070
V
GS
=-10V, I
D
=-4.2A
V
GS
=-4.5V, I
D
=-3.4A
Forward Transconductance (1)(3)
g
fs
9.2
S
V
DS
=-15V,I
D
=-4.2A
DYNAMIC (3)
Input Capacitance
C
iss
970
pF
V
DS
=-15V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
169
pF
Reverse Transfer Capacitance
C
rss
116
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
3.8
ns
V
DD
=-15V, I
D
=-1A
R
G
=6.0
, V
GS
=-10V
Rise Time
t
r
6.1
ns
Turn-Off Delay Time
t
d(off)
35
ns
Fall Time
t
f
19
ns
Gate Charge
Q
g
12.9
nC
V
DS
=-15V,V
GS
=-5V,
I
D
=-4.2A
Total Gate Charge
Q
g
24.9
nC
V
DS
=-15V,V
GS
=-10V,
I
D
=-4.2A
Gate-Source Charge
Q
gs
2.67
nC
Gate-Drain Charge
Q
gd
3.86
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
-0.85
-0.95
V
T
J
=25 C, I
S
=-3.6A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
21.2
ns
T
J
=25 C, I
F
=-2A,
di/dt= 100A/ s
Reverse Recovery Charge (3)
Q
rr
18.7
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
300 s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP3A16G
5
ISSUE 2 - JULY 2004
0.1
1
10
0.01
0.1
1
10
0.1
1
10
0.01
0.1
1
10
1
2
3
0.1
1
10
-50
0
50
100
150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
0.01
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
100
1.5V
10V
4V
3.5V
-V
GS
2.5V
2V
3V
Output Characteristics
T = 25C
-V
GS
-I
D
D
r
a
i
n
C
u
rre
n
t
(
A
)
-V
DS
Drain-Source Voltage (V)
4V
3.5V
3V
2V
1.5V
10V
2.5V
Output Characteristics
T = 150C
-I
D
D
r
a
i
n
C
u
rre
n
t
(
A
)
-V
DS
Drain-Source Voltage (V)
Typical Transfer Characteristics
-V
DS
= 10V
T = 25C
T = 150C
-I
D
D
r
a
i
n
C
u
rre
n
t
(
A
)
-V
GS
Gate-Source Voltage (V)
Normalised Curves v Temperature
R
DS(on)
V
GS
= -10V
I
D
= -4.2A
V
GS(th)
V
GS
= V
DS
I
D
= -250uA
N
o
rm
a
lis
e
d
R
DS
(
o
n
)
an
d
V
GS
(
t
h
)
Tj Junction Temperature (C)
1.5V
10V
3V
2V
4V
3.5V
2.5V
On-Resistance v Drain Current
T = 25C
-V
GS
R
DS
(
o
n
)
D
r
a
i
n-
Sour
c
e
O
n
-
R
e
s
i
s
t
a
nc
e
(
)
-I
D
Drain Current (A)
T = 150C
T = 25C
Source-Drain Diode Forward Voltage
-V
SD
Source-Drain Voltage (V)
-I
SD
R
e
ver
se
D
r
ai
n
C
u
r
r
e
n
t
(
A
)
TYPICAL CHARACTERISTICS
PDF 
ZIP