SUMMARY
V
(BR)DSS
= -30V; R
DS(ON)
= 0.040
I
D
= -6.7A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
Disconnect switches
Motor control
DEVICE MARKING
ZXMP
3A16
ZXMP3A16N8
PROVISIONAL ISSUE A - JULY 2002
1
30V P-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP3A16N8TA
7"
12mm
500 units
ZXMP3A16N8TC
13"
12mm
2500 units
ORDERING INFORMATION
Top View
PINOUT
SO8
ZXMP3A16N8
PROVISIONAL ISSUE A - JULY 2002
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
65
C/W
Junction to Ambient (b)
R
JA
45
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
-30
V
Gate Source Voltage
V
GS
20
V
Continuous Drain Current V
GS
=-10V; T
A
=25C (b)
V
GS
=-10V; T
A
=70C (b)
V
GS
=-10V; T
A
=25C (a)
I
D
-6.7
-5.4
-5.6
A
Pulsed Drain Current (c)
I
DM
-26
A
Continuous Source Current (Body Diode) (b)
I
S
-3.2
A
Pulsed Source Current (Body Diode) (c)
I
SM
-26
A
Power Dissipation at T
A
=25C (a)
Linear Derating Factor
P
D
1.9
15.2
W
mW/C
Power Dissipation at T
A
=25C (b)
Linear Derating Factor
P
D
2.8
22.4
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS.
ZXMP3A16N8
PROVISIONAL ISSUE A - JULY 2002
3
1
10
10m
100m
1
10
Single Pulse
T
amb
=25C
R
DS(on)
Limited
100s
1ms
10ms
100ms
1s
DC
Safe Operating Area
-I
D
D
r
a
i
n
C
u
rre
n
t
(
A
)
-V
DS
Drain-Source Voltage (V)
0
20
40
60
80
100 120 140 160
0.0
0.4
0.8
1.2
1.6
2.0
Derating Curve
Temperature (C)
M
a
x
P
ow
e
r
D
i
s
s
i
pa
t
i
on
(
W
)
100
1m
10m 100m
1
10
100
1k
0
10
20
30
40
50
60
70
T
amb
=25C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
h
e
r
m
a
l
R
e
si
st
a
n
ce
(
C
/
W
)
Pulse Width (s)
100
1m
10m 100m
1
10
100
1k
1
10
100
Single Pulse
T
amb
=25C
Pulse Power Dissipation
Pulse Width (s)
Ma
x
i
mu
m
P
o
w
e
r
(
W
)
CHARACTERISTICS
ZXMP3A16N8
PROVISIONAL ISSUE A - JULY 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
-30
V
ID=-250
A, VGS=0V
Zero Gate Voltage Drain Current
IDSS
-1.0
A
VDS=-30V, VGS=0V
Gate-Body Leakage
IGSS
100
nA
VGS= 20V, VDS=0V
Gate-Source Threshold Voltage
VGS(th)
-1.0
V
I
D
=-250 A,VDS= VGS
Static Drain-Source On-State Resistance
(1)
RDS(on)
0.040
0.070
VGS=-10V, ID=-4.2A
VGS=-4.5V, ID=-3.4A
Forward Transconductance (1)(3)
gfs
9.2
S
VDS=-15V,ID=-4.2A
DYNAMIC (3)
Input Capacitance
Ciss
970
pF
VDS=-15 V, VGS=0V,
f=1MHz
Output Capacitance
Coss
166
pF
Reverse Transfer Capacitance
Crss
116
pF
SWITCHING(2) (3)
Turn-On Delay Time
td(on)
1.95
ns
VDD =-15V, ID=-1A
RG=6.0
, VGS=-10V
Rise Time
tr
3.82
ns
Turn-Off Delay Time
td(off)
31.8
ns
Fall Time
tf
10.2
ns
Gate Charge
Qg
12.9
nC
VDS=-15V,VGS=-5V,
ID=-4.2A
Total Gate Charge
Qg
24.9
nC
VDS=-15V,VGS=-10V,
ID=-4.2A
Gate-Source Charge
Qgs
2.67
nC
Gate-Drain Charge
Qgd
3.86
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
VSD
-0.85
-0.95
V
TJ=25C, IS=-3.6A,
VGS=0V
Reverse Recovery Time (3)
trr
21.2
ns
TJ=25C, IF=-2A,
di/dt= 100A/
s
Reverse Recovery Charge (3)
Qrr
18.7
nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
300
s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP3A16N8
PROVISIONAL ISSUE A - JULY 2002
5
0.1
1
10
0.01
0.1
1
10
0.1
1
10
0.01
0.1
1
10
1
2
3
0.1
1
10
-50
0
50
100
150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
0.01
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
100
1.5V
10V
4V
3.5V
-V
GS
2.5V
2V
3V
Output Characteristics
T = 25C
-V
GS
-I
D
D
r
a
i
n
C
u
rre
n
t
(
A
)
-V
DS
Drain-Source Voltage (V)
4V
3.5V
3V
2V
1.5V
10V
2.5V
Output Characteristics
T = 150C
-I
D
D
r
a
i
n
C
u
rre
n
t
(
A
)
-V
DS
Drain-Source Voltage (V)
Typical Transfer Characteristics
-V
DS
= 10V
T = 25C
T = 150C
-I
D
D
r
a
i
n
C
u
rre
n
t
(
A
)
-V
GS
Gate-Source Voltage (V)
Normalised Curves v Temperature
R
DS(on)
V
GS
= -10V
I
D
= -4.2A
V
GS(th)
V
GS
= V
DS
I
D
= -250uA
N
o
rm
a
lis
e
d
R
D
S
(
on)
an
d
V
G
S
(th
)
Tj Junction Temperature (C)
1.5V
10V
3V
2V
4V
3.5V
2.5V
On-Resistance v Drain Current
T = 25C
-V
GS
R
D
S
(
on)
D
r
a
i
n-
Sour
c
e
O
n
-
R
e
s
i
s
t
a
nc
e
(
)
-I
D
Drain Current (A)
T = 150C
T = 25C
Source-Drain Diode Forward Voltage
-V
SD
Source-Drain Voltage (V)
-I
SD
R
e
v
e
rs
e
D
ra
in
C
u
rre
n
t
(A
)
CHARACTERISTICS
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