S E M I C O N D U C T O R S
SUMMARY
V
(BR)DSS
= -40V: R
DS(on)
= 0.060 : I
D
= -6.4A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
APPLICATIONS
DC-DC Converters
Disconnect switches
Audio output stages
Motor Control
DEVICE MARKING
ZXMP
4A16
ZXMP4A16G
1
40V P-CHANNEL ENHANCEMENT MODE MOSFET
ISSUE 4 - JULY 2003
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP4A16GTA
7"
12mm
1000 units
ZXMP4A16GTC
13"
12mm
4000 units
ORDERING INFORMATION
Top View
PINOUT
SOT223
ZXMP4A16G
S E M I C O N D U C T O R S
2
ISSUE 4 - JULY 2003
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
-40
V
Gate-Source Voltage
V
GS
20
V
Continuous Drain Current (V
GS
= -10V; T
A
=25C)
(b)
(V
GS
= -10V; T
A
=70C)
(b)
(V
GS
= -10V; T
A
=25C)
(a)
I
D
-6.4
-5.1
-4.6
A
Pulsed Drain Current
(c)
I
DM
-21
A
Continuous Source Current (Body Diode)
(b)
I
S
-5.2
A
Pulsed Source Current (Body Diode)(c)
I
SM
-21
A
Power Dissipation at T
A
=25C
(a)
Linear Derating Factor
P
D
2.0
16
W
mW/C
Power Dissipation at T
A
=25C
(b)
Linear Derating Factor
P
D
3.9
31
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)
R
JA
62.5
C/W
Junction to Ambient
(b)
R
JA
32.2
C/W
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ZXMP4A16G
S E M I C O N D U C T O R S
3
ISSUE 4 - JULY 2003
CHARACTERISTICS
ZXMP4A16G
S E M I C O N D U C T O R S
ISSUE 4 - JULY 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-40
V
I
D
=-250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1
A
V
DS
=-40V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-1.0
V
I
D
=-250 A, V
DS
= V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.060
0.100
V
GS
=-10V, I
D
=-3.8A
V
GS
=-4.5V, I
D
=-2.9A
Forward Transconductance
(1)(3)
g
fs
8.85
S
V
DS
=-15V,I
D
=-3.8A
DYNAMIC
(3)
Input Capacitance
C
iss
1007
pF
V
DS
=-20V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
130
pF
Reverse Transfer Capacitance
C
rss
85
pF
SWITCHING
(2)(3)
Turn-On Delay Time
t
d(on)
2.33
ns
V
DD
=-20V, I
D
=-1A
R
G
(6.0
,
V
GS
=-10V
Rise Time
t
r
8.84
ns
Turn-Off Delay Time
t
d(off)
29.18
ns
Fall Time
t
f
12.54
ns
Gate Charge
Q
g
13.6
nC
V
DS
=-20V,V
GS
=-5V,
I
D
=-3.8A
Total Gate Charge
Q
g
26.1
nC
V
DS
=-20V,V
GS
=-10V,
I
D
=-3.8A
Gate-Source Charge
Q
gs
2.8
nC
Gate-Drain Charge
Q
gd
4.8
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
-0.85
-1.2
V
T
J
=25 C, I
S
=-3.4A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
27.2
ns
T
J
=25 C, I
F
=-3A,
di/dt= 100A/ s
Reverse Recovery Charge
(3)
Q
rr
25.4
nC
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
300s. Duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP4A16G
S E M I C O N D U C T O R S
5
ISSUE 4 - JULY 2003
TYPICAL CHARACTERISTICS
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