SUMMARY
V
(BR)DSS
= -60V: R
DS(on)
= 0.390 : I
D
= -2.3A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
APPLICATIONS
DC-DC converters
Power management functions
Relay and solenoid driving
Motor control
DEVICE MARKING
ZXMP
6A13
ZXMP6A13G
1
60V P-CHANNEL ENHANCEMENT MODE MOSFET
ISSUE 2 - JULY 2004
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP6A13GTA
7"
12mm
1000 units
ZXMP6A13GTC
13"
12mm
4000 units
ORDERING INFORMATION
Top View
PINOUT
SOT223
ZXMP6A13G
2
ISSUE 2 - JULY 2004
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
-60
V
Gate-Source Voltage
V
GS
20
V
Continuous Drain Current (V
GS
= -10V; T
A
=25C)
(b)
(V
GS
= -10V; T
A
=70C)
(b)
(V
GS
= -10V; T
A
=25C)
(a)
I
D
-2.3
-1.9
-1.7
A
Pulsed Drain Current
(c)
I
DM
-7.8
A
Continuous Source Current (Body Diode)
(b)
I
S
-4.1
A
Pulsed Source Current (Body Diode)
(c)
I
SM
-7.8
A
Power Dissipation at T
A
=25C
(a)
Linear Derating Factor
P
D
2.0
16
W
mW/C
Power Dissipation at T
A
=25C
(b)
Linear Derating Factor
P
D
3.9
31
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)
R
JA
62.5
C/W
Junction to Ambient
(b)
R
JA
32.2
C/W
THERMAL RESISTANCE
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ZXMP6A13G
ISSUE 2 - JULY 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-60
V
I
D
=-250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1
A
V
DS
=-60V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-1.0
V
I
D
=-250 A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.390
0.595
V
GS
=-10V, I
D
=-0.9A
V
GS
=-4.5V, I
D
=-0.8A
Forward Transconductance
(1)(3)
g
fs
1.8
S
V
DS
=-15V,I
D
=-0.9A
DYNAMIC
(3)
Input Capacitance
C
iss
233
pF
V
DS
=-30V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
17.4
pF
Reverse Transfer Capacitance
C
rss
9.6
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
1.6
ns
V
DD
=-30V, I
D
=-1A
R
G
6.0
, V
GS
=-10V
Rise Time
t
r
2.3
ns
Turn-Off Delay Time
t
d(off)
13
ns
Fall Time
t
f
5.8
ns
Gate Charge
Q
g
2.4
nC
V
DS
=-30V,V
GS
=-5V,
I
D
=-0.9A
Total Gate Charge
Q
g
5.1
nC
V
DS
=-30V,V
GS
=-10V,
I
D
=-0.9A
Gate-Source Charge
Q
gs
0.7
nC
Gate-Drain Charge
Q
gd
0.7
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
-0.85
-0.95
V
T
J
=25 C, I
S
=-0.8A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
22.6
ns
T
J
=25 C, I
F
=-0.9A,
di/dt= 100A/ s
Reverse Recovery Charge
(3)
Q
rr
23.2
nC
ELECTRICAL CHARACTERISTICS
(at T
A
= 25C unless otherwise stated)
NOTES
:
(1) Measured under pulsed conditions. Width
300 s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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