SUMMARY
V
(BR)DSS
= -60V; R
DS(ON)
= 0.125
I
D
= -3.0A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
APPLICATIONS
DC - DC Converters
Power management functions
Disconnect switches
Motor control
DEVICE MARKING
617
ZXMP6A17E6
PROVISIONAL ISSUE B - MARCH 2005
ADVANCE INFORMATION
1
60V P-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP6A17E6TA
7"
8mm
3000 units
ZXMP6A17E6TC
13"
8mm
10000 units
ORDERING INFORMATION
Top View
PINOUT
SOT23-6
ZXMP6A17E6
PROVISIONAL ISSUE B - MARCH 2005
2
ADVANCE INFORMATION
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)
R
JA
113
C/W
Junction to Ambient
(b)
R
JA
73
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
-60
V
Gate Source Voltage
V
GS
20
V
Continuous Drain Current V
GS
=10V; T
A
=25C
(b)
V
GS
=10V; T
A
=70C
(b)
V
GS
=10V; T
A
=25C
(a)
I
D
-3.0
-2.4
-2.3
A
Pulsed Drain Current
(c)
I
DM
-13.6
A
Continuous Source Current (Body Diode)
(b)
I
S
-2.5
A
Pulsed Source Current (Body Diode)
(c)
I
SM
-13.6
A
Power Dissipation at T
A
=25C
(a)
Linear Derating Factor
P
D
1.1
8.8
W
mW/C
Power Dissipation at T
A
=25C
(b)
Linear Derating Factor
P
D
1.7
13.6
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZXMP6A17E6
PROVISIONAL ISSUE B - MARCH 2005
3
ADVANCE INFORMATION
1
10
100
10m
100m
1
10
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
100
1m
10m 100m
1
10
100
1k
0
20
40
60
80
100
100
1m
10m 100m
1
10
100
1k
1
10
100
100us
100ms
1s
R
DS(ON)
Limited
1ms
P-channel Safe Operating Area
Single Pulse, T
amb
=25C
DC
10ms
-I
D
D
r
a
i
n
C
ur
r
e
nt
(
A
)
-V
DS
Drain-Source Voltage (V)
Derating Curve
M
a
x
P
ow
e
r
D
i
s
s
i
pa
t
i
on
(
W
)
Temperature (C)
D=0.2
D=0.5
D=0.1
Transient Thermal Impedance
Single Pulse
D=0.05
T
h
e
r
m
a
l
R
e
s
is
t
a
n
c
e
(
C
/W
)
Pulse Width (s)
Single Pulse
T
amb
=25C
Pulse Power Dissipation
Ma
x
i
mu
m
P
o
w
e
r
(
W
)
Pulse Width (s)
CHARACTERISTICS
ZXMP6A17E6
PROVISIONAL ISSUE B - MARCH 2005
ADVANCE INFORMATION
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNI
T
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-60
V
I
D
=-250 A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1.0
A
V
DS
=-60V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-1.0
V
I
D
=-250 A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.125
0.190
V
GS
=-10V, I
D
=-2.3A
V
GS
=-4.5V, I
D
=-1.9A
Forward Transconductance
(1)(3)
g
fs
4.9
S
V
DS
=-15V,I
D
=-2.3A
DYNAMIC
(3)
Input Capacitance
C
iss
670
pF
V
DS
=-30V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
46.7
pF
Reverse Transfer Capacitance
C
rss
28
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
2.4
ns
V
DD
=-30V, I
D
=-1A
R
G
6.0 , V
GS
=-10V
Rise Time
t
r
3.5
ns
Turn-Off Delay Time
t
d(off)
30.0
ns
Fall Time
t
f
7.4
ns
Gate Charge
Q
g
7.3
nC
V
DS
=-30V,V
GS
=-5V,
I
D
=-2.3A
Total Gate Charge
Q
g
15.1
nC
V
DS
=-30V,V
GS
=-10V,
I
D
=-2.3A
Gate-Source Charge
Q
gs
1.8
nC
Gate-Drain Charge
Q
gd
1.9
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
-0.85
-0.95
V
T
J
=25C, I
S
=-2A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
26.4
ns
T
J
=25C, I
F
=-1.7A,
di/dt= 100A/
s
Reverse Recovery Charge
(3)
Q
rr
32.7
nC
ELECTRICAL CHARACTERISTICS (at T
A
= 25C unless otherwise stated)
NOTES:
(1) Measured under pulsed conditions. Width
=300s. Duty cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP6A17E6
PROVISIONAL ISSUE B - MARCH 2005
5
ADVANCE INFORMATION
0.1
1
10
0.01
0.1
1
10
0.1
1
10
0.01
0.1
1
10
1
2
3
4
5
0.1
1
10
-50
0
50
100
150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1
10
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
10V
2V
3.5V
-V
GS
2.5V
4.5V
3V
Output Characteristics
T = 25C
-V
GS
-I
D
D
r
a
i
n
C
u
rre
n
t
(
A
)
-V
DS
Drain-Source Voltage (V)
1.5V
3.5V
3V
2V
4.5V
10V
2.5V
Output Characteristics
T = 150C
-I
D
D
r
a
i
n
C
u
rre
n
t
(
A
)
-V
DS
Drain-Source Voltage (V)
Typical Transfer Characteristics
-V
DS
= 10V
T = 25C
T = 150C
-I
D
D
r
a
i
n
C
u
rre
n
t
(
A
)
-V
GS
Gate-Source Voltage (V)
Normalised Curves v Temperature
R
DS(on)
V
GS
= -10V
I
D
= - 0.9A
V
GS(th)
V
GS
= V
DS
I
D
= -250uA
N
o
rm
a
lis
e
d
R
D
S
(
on)
an
d
V
G
S
(th
)
Tj Junction Temperature (C)
4.5V
10V
3V
2V
3.5V
2.5V
On-Resistance v Drain Current
T = 25C
-V
GS
R
D
S
(
on)
D
r
a
i
n-
Sour
c
e
O
n
-
R
e
s
i
s
t
a
nc
e
(
)
-I
D
Drain Current (A)
T = 150C
T = 25C
Source-Drain Diode Forward Voltage
-V
SD
Source-Drain Voltage (V)
-I
SD
R
ever
s
e
D
r
a
i
n
C
u
r
r
en
t
(
A
)
TYPICAL CHARACTERISTICS
PDF 
ZIP