SUMMARY
V
(BR)DSS
= -60V; R
DS(ON)
= 0.055 ; I
D
= -4.8A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
Motor drive
Disconnect switches
DEVICE MARKING
ZXMP
6A18
ZXMP6A18DN8
ISSUE 1 - MAY 2005
1
DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP6A18DN8TA
7'`
12mm
500 units
ZXMP6A18DN8TC
13'`
12mm
2500 units
ORDERING INFORMATION
SO8
Top view
PINOUT
ZXMP6A18DN8
ISSUE 1 - MAY 2005
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)(d)
R
JA
100
C/W
Junction to Ambient
(b)(e)
R
JA
69
C/W
Junction to Ambient
(b)(d)
R
JA
58
C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300s - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
-60
V
Gate-Source Voltage
V
GS
20
V
Continuous Drain Current@V
GS
=10V; T
A
=25 C
(b)(d)
@V
GS
=10V; T
A
=70 C
(b)(d)
@V
GS
=10V; T
A
=25 C
(a)(d)
I
D
-4.8
-3.8
-3.7
A
A
A
Pulsed Drain Current
(c)
I
DM
-23
A
Continuous Source Current (Body Diode)
(b)
I
S
-3.3
A
Pulsed Source Current (Body Diode)
(c)
I
SM
-23
A
Power Dissipation at TA=25C
(a)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/C
Power Dissipation at TA=25C
(a)(e)
Linear Derating Factor
P
D
1.8
14
W
mW/C
Power Dissipation at TA=25C
(b)(d)
Linear Derating Factor
P
D
2.1
17
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
ZXMP6A18DN8
ISSUE 1 - MAY 2005
3
ZXMP6A18DN8
ISSUE 1 - MAY 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-60
V
I
D
=-250
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1.0
A
V
DS
=-60V, V
GS
=0V
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-1.0
V
I
D
=-250 A,
V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.055
0.080
V
GS
=-10V, I
D
=-3.5A
V
GS
=-4.5V, I
D
=-2.9A
Forward Transconductance
(1)(3)
g
fs
8.7
S
V
DS
=-15V,I
D
=-3.5A
DYNAMIC
(3)
Input Capacitance
C
iss
1580
pF
V
DS
=-30 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
160
pF
Reverse Transfer Capacitance
C
rss
140
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
4.6
ns
V
DD
=-30V, I
D
=-1A
R
G
6.0 , V
GS
=-10V
Rise Time
t
r
5.8
ns
Turn-Off Delay Time
t
d(off)
55
ns
Fall Time
t
f
23
ns
Gate Charge
Q
g
23
nC
V
DS
=-30V,V
GS
=-5V,
I
D
=-3.5A
Total Gate Charge
Q
g
44
nC
V
DS
=-30V,V
GS
=-10V,
I
D
=-3.5A
Gate-Source Charge
Q
gs
3.9
nC
Gate-Drain Charge
Q
gd
9.8
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
-0.85
-0.95
V
T
J
=25C, I
S
=-4.2A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
37
ns
T
J
=25C, I
F
=-2.1A,
di/dt= 100A/
s
Reverse Recovery Charge
(3)
Q
rr
56
nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
300s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP6A18DN8
ISSUE 1 - MAY 2005
5
TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS
ZXMP6A18DN8
ISSUE 1 - MAY 2005
6
ZXMP6A18DN8
ISSUE 1 - MAY 2005
7
Europe
Zetex GmbH
Streitfeldstrae 19
D-81673 Mnchen
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
Zetex Semiconductors plc 2005
PACKAGE OUTLINE
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETERS
DIM
Millimeters
Inches
DIM
Millimeters
Inches
Min
Max
Min
Max
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
e
1.27 BSC
0.050 BSC
A1
0.10
0.25
0.004
0.010
b
0.33
0.51
0.013
0.020
D
4.80
5.00
0.189
0.197
c
0.19
0.25
0.008
0.010
H
5.80
6.20
0.228
0.244
0
8
0
8
E
3.80
4.00
0.150
0.157
h
0.25
0.50
0.010
0.020
PACKAGE DIMENSIONS
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