Issue 1 - March 2006
1
www.zetex.com
Zetex Semiconductors plc 2006
ZXMP7A17K
70V P-channel enhancement mode MOSFET
Summary
V
DSS
=70V : R
DS(on)
=0.16
I
D
=5.7A
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
DPAK package
Applications
DC-DC converters
Power management functions
Disconnect switches
Motor control
Class D audio output stages
Ordering information
Device marking
ZXMP
7A17
Device
Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXMP7A17KTC
13
12
4,000
D
S
G
Pinout - Top view
ZXMP7A17K
Issue 1 - March 2006
2
www.zetex.com
Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum
junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Parameter
Symbol
Limit
Unit
Drain-source voltage
V
DSS
-70
V
Gate-source voltage
V
GS
20
V
Continuous drain current
@ V
GS
=10V; T
A
=25C
(b)
I
D
-5.7
A
@ V
GS
=10V; T
A
=25C
(b)
-4.6
@ V
GS
=10V; T
A
=25C
(a)
-3.8
Pulsed drain current
(c)
I
DM
-17.7
A
Continuous source current (body diode)
(b)
I
S
-9.2
A
Pulsed source current (body diode)
(c)
I
SM
-17.7
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
4.17
33.3
W
mW/C
Power dissipation at T
A
=25C
(b)
Linear derating factor
P
D
9.25
74
W
mW/C
Power dissipation at T
A
=25C
(d)
Linear derating factor
P
D
2.11
16.8
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
C
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to ambient
(a)
R
JA
30
C/W
Junction to ambient
(b)
R
JA
13.5
C/W
Junction to ambient
(c)
R
JA
59.1
C/W
ZXMP7A17K
Issue 1 - March 2006
3
www.zetex.com
Zetex Semiconductors plc 2006
Characteristics
ZXMP7A17K
Issue 1 - March 2006
4
www.zetex.com
Zetex Semiconductors plc 2006
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown
voltage
V
(BR)DSS
-70
V
I
D
= -250 A, V
GS
=0V
Zero gate voltage drain
current
I
DSS
-1
A
V
DS
= -70V, V
GS
=0V
Gate-body leakage
I
GSS
100
nA
V
GS
=20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
-1.0
V
I
D
= -250 A, V
DS
=V
GS
Static drain-source on-state
resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
R
DS(on)
0.16
V
GS
= -10V, I
D
= -2.1A
0.25
V
GS
= -4.5V, I
D
= -1.7A
Forward transconductance
(*)()
g
fs
4.4
S
V
DS
= -15V, I
D
= -2.1A
Dynamic
()
Input capacitance
C
iss
635
pF
V
DS
= -40V, V
GS
=0V
f=1MHz
Output capacitance
C
oss
52
pF
Reverse transfer capacitance
C
rss
42.5
pF
Switching
() ()
() Switching characteristics are independent of operating junction temperature.
() For design aid only, not subject to production testing.
Turn-on-delay time
t
d(on)
2.5
ns
V
DD
= -35V, I
D
= -1A
R
G
6.0 , V
GS
= -10V
Rise time
t
r
3.4
ns
Turn-off delay time
t
d(off)
27.9
ns
Fall time
t
f
8
ns
Total gate charge
Q
g
9.6
nC
V
DS
= -35V, V
GS
= -5V
I
D
= -2.1A
Total gate charge
Q
g
18
nC
V
DS
= -35V, V
GS
= -10V
I
D
= -2.1A
Gate-source charge
Q
gs
1.77
nC
Gate drain charge
Q
gd
3.66
nC
Source-drain diode
Diode forward voltage
(*)
V
SD
-0.85
-0.95
V
T
j
=25C, I
S
= -2.0A,
V
GS
=0V
Reverse recovery time
()
t
rr
29.8
ns
T
j
=25C, I
S
= -2.1A,
di/dt=100A/ s
Reverse recovery charge
()
Q
rr
38.5
nC
ZXMP7A17K
Issue 1 - March 2006
5
www.zetex.com
Zetex Semiconductors plc 2006
Typical characteristics
ZXMP7A17K
Issue 1 - March 2006
6
www.zetex.com
Zetex Semiconductors plc 2006
Typical characteristics
ZXMP7A17K
Issue 1 - March 2006
7
www.zetex.com
Zetex Semiconductors plc 2006
Intentionally left blank
ZXMP7A17K
Issue 1 - March 2006
8
www.zetex.com
Zetex Semiconductors plc 2006
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Europe
Zetex GmbH
Streitfeldstrae 19
D-81673 Mnchen
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
Package outline - DPAK
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
DIM
Inches
Millimeters
DIM
Inches
Millimeters
Min
Max
Min
Max
Min
Max
Min
Max
A
0.086
0.094
2.18
2.39
e
0.090 BSC
2.29 BSC
A1
-
0.005
-
0.127
H
0.370
0.410
9.40
10.41
b
0.020
0.035
0.508
0.89
L
0.055
0.070
1.40
1.78
b2
0.030
0.045
0.762
1.14
L1
0.108 REF
2.74 REF
b3
0.205
0.215
5.21
5.46
L2
0.020 BSC
0.508 BSC
c
0.018
0.024
0.457
0.61
L3
0.035
0.065
0.89
1.65
c2
0.018
0.023
0.457
0.584
L4
0.025
0.040
0.635
1.016
D
0.213
0.245
5.41
6.22
L5
0.045
0.060
1.14
1.52
D1
0.205
-
5.21
-
1
0
10
0
10
E
0.250
0.265
6.35
6.73
0
15
0
15
E1
0.170
-
4.32
-
-
-
-
-
-
PDF 
ZIP