ZXT10N50DE6
ISSUE 1 - SEPTEMBER 2000
SuperSOTTM
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=50V; R
SAT
= 75m ; I
C
= 3A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE
characterised up to 12A
I
C
=3A Continuous Collector Current
SOT23-6 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXT10N50DE6TA
7
8mm embossed
3000 units
ZXT10N50DE6TC
13
8mm embossed
10000 units
DEVICE MARKING
619
Top View
1
SOT23-6
C
E
B
C
C
C
ISSUE 1 - SEPTEMBER 2000
ZXT10N50DE6
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
113
C/W
Junction to Ambient (b)
R
JA
73
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
6
A
Continuous Collector Current
I
C
3
A
Base Current
I
B
500
mA
Power Dissipation at TA=25C (a)
Linear Derating Factor
P
D
1.1
8.8
W
mW/C
Power Dissipation at TA=25C (b)
Linear Derating Factor
P
D
1.7
13.6
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ISSUE 1 - SEPTEMBER 2000
ZXT10N50DE6
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
50
190
V
I
C
=100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
50
65
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
5
8.3
V
I
E
=100 A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
=40V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Collector Emitter Cut-Off Current
I
CES
100
nA
V
CES
=40V
Collector-Emitter Saturation
Voltage
V
CE(sat)
14
145
115
225
20
200
200
300
mV
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=50mA*
I
C
=3A, I
B
=100mA*
Base-Emitter Saturation Voltage
V
BE(sat)
0.93
1.0
V
I
C
=3A, I
B
=100mA*
Base-Emitter Turn-On Voltage
V
BE(on)
0.88
0.95
V
I
C
=3A, V
CE
=2V*
Static Forward Current Transfer
Ratio
h
FE
200
300
200
100
400
450
400
225
40
I
C
=10mA, V
CE
=2V*
I
C
=0.2A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
Transition Frequency
f
T
100
165
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
12
20
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
(on)
170
ns
V
CC
=10V, I
C
=1A
I
B1
=I
B2
=10mA
Turn-Off Time
t
(off)
750
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
4
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