ISSUE 1 - DECEMBER 1999
ZXT11N20DF
SuperSOT4TM
20V NPN SILICON LOW SATURATION TRANSISTOR
C
E
B
SUMMARY
V
CEO
=20V; R
SAT
= 40m ; I
C
= 2.5A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE
characterised up to 5A
I
C
=2.5A Continuous Collector Current
SOT23 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXT11N20DFTA
7
8mm embossed
3000 units
ZXT11N20DFTC
13
8mm embossed
10000 units
DEVICE MARKING
2N0
Top View
SOT23
1
ISSUE 1 - DECEMBER 1999
ZXT11N20DF
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
200
C/W
Junction to Ambient (b)
R
JA
155
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
7.5
V
Peak Pulse Current
I
CM
5
A
Continuous Collector Current
I
C
2.5
A
Base Current
I
B
500
mA
Power Dissipation at TA=25C (a)
Linear Derating Factor
P
D
625
5
mW
mW/C
Power Dissipation at TA=25C (b)
Linear Derating Factor
P
D
806
6.4
mW
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ISSUE 1 - DECEMBER 1999
ZXT11N20DF
100m
1
10
10m
100m
1
10
Single Pulse T
amb
=25C
100s
1ms
10ms
100ms
1s
DC
Safe Operating Area
I
C
Collector
Current
(A)
V
CE
Collector-Emitter Voltage (V)
0
20
40
60
80
100
120
140
160
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Derating Curve
Temperature (C)
M
ax
Pow
er
Dissipation
(W
)
100
1m
10m
100m
1
10
100
1k
0
25
50
75
100
125
150
175
200
225
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Therm
al
Resistance
(C/W
)
Pulse Width (s)
TYPICAL CHARACTERISTICS
3
ISSUE 1 - DECEMBER 1999
ZXT11N20DF
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
40
V
I
C
=100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
20
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
7.5
V
I
E
=100 A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
=32V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=6V
Collector Emitter Cut-Off Current
I
CES
100
nA
V
CES
=32V
Collector-Emitter Saturation
Voltage
V
CE(sat)
7
65
40
90
12
100
60
130
mV
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=1A, I
B
=100mA*
I
C
=2.5A, I
B
=250mA*
Base-Emitter Saturation Voltage
V
BE(sat)
0.9
1.0
V
I
C
=2.5A, I
B
=250mA*
Base-Emitter Turn-On Voltage
V
BE(on)
0.85
1.0
V
I
C
=2.5A, V
CE
=2V*
Static Forward Current Transfer
Ratio
h
FE
200
300
250
150
100
900
I
C
=10mA, V
CE
=2V*
I
C
=100mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
Transition Frequency
f
T
160
MHz
I
C
=50mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
20
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
(on)
122
ns
V
CC
=10V, I
C
=2A
I
B1
=I
B2
=20mA
Turn-Off Time
t
(off)
295
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
4
ISSUE 1 - DECEMBER 1999
ZXT11N20DF
5
1m
10m
100m
1
10
0.00
0.05
0.10
0.15
0.20
0.25
V
CE(SAT)
v I
C
I
C
/I
B
=50
100C
25C
-55C
V
CE(SAT)
(V)
I
C
Collector Current (A)
1m
10m
100m
1
10
1m
10m
100m
V
CE(SAT)
v I
C
T
amb
=25C
I
C
/I
B
=100
I
C
/I
B
=50
I
C
/I
B
=10
V
CE(SAT)
(V)
I
C
Collector Current (A)
1m
10m
100m
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
h
FE
v I
C
V
CE
=2V
-55C
25C
100C
N
orm
alised
G
ain
I
C
Collector Current (A)
1m
10m
100m
1
10
0.4
0.6
0.8
1.0
V
BE(SAT)
v I
C
I
C
/I
B
=50
100C
25C
-55C
V
BE(SAT)
(V)
I
C
Collector Current (A)
1m
10m
100m
1
10
0.4
0.6
0.8
1.0
V
BE(ON)
v I
C
V
CE
=2V
100C
25C
-55C
V
BE(O
N
)
(V)
I
C
Collector Current (A)
TYPICAL CHARACTERISTICS
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