SUMMARY
V
CEO
= -12V; R
SAT
= 60m ; I
C
= -4A
DESCRIPTION
Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline,
this new 4
th
generation low saturation transistor offers extremely low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
Additionally users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (nom 0.9mm)
FEATURES
Low Equivalent On Resistance
Extremely Low Saturation Voltage (-140mV@ -1A)
hFE specified up to -10A
IC= -4A Continuous Collector Current
2mm x 2mm MLP
APPLICATIONS
DC - DC Converters (FET Driving)
Charging Circuits
Power switches
Motor control
ORDERING INFORMATION
DEVICE MARKING
S1
ZXT1M322
ISSUE 2 - JUNE 2002
1
MPPSTM Miniature Package Power Solutions
12V PNP LOW SATURATION SWITCHING TRANSISTOR
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXT1M322TA
7
8mm
3000
ZXT1M322TC
13
8mm
10000
2mm x 2mm Single MLP
underside view
PINOUT
B
C
E
2mm x 2mm MLP
(single die)
ZXT1M322
ISSUE 2 - JUNE 2002
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
JA
83
C/W
Junction to Ambient (b)
R
JA
51
C/W
Junction to Ambient (d)
R
JA
125
C/W
Junction to Ambient (e)
R
JA
42
C/W
THERMAL RESISTANCE
NOTES
(a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at t 5 secs with all exposed pads
attached.
(c) Repetitive rating - pulse width limited by max junction temperature. refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with minimal lead connections only.
(e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in the
package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight is
Rth=300C/W giving a power rating of Ptot=420mW.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V
CBO
-20
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-7.5
V
Peak Pulse Current
I
CM
-12
A
Continuous Collector Current (a)
I
C
-4
A
Base Current
I
B
-1000
mA
Power Dissipation at TA=25C (a)
Linear Derating Factor
P
D
1.5
12
W
mW/C
Power Dissipation at TA=25C (b)
Linear Derating Factor
P
D
2.45
19.6
W
mW/C
Power Dissipation at TA=25C (d)
Linear Derating Factor
P
D
1
8
W
mW/C
Power Dissipation at TA=25C (e)
Linear Derating Factor
P
D
3
24
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS.
ZXT1M322
ISSUE 2 - JUNE 2002
3
0.1
1
10
0.01
0.1
1
10
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
100
1m
10m 100m
1
10
100
1k
0
20
40
60
80
0.1
1
10
100
0
25
50
75
100
125
150
175
200
225
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
100us
100ms
1s
V
CE(SAT)
Limited
1ms
Safe Operating Area
Single Pulse, T
amb
=25C
DC
10ms
I
C
Co
l
l
e
c
t
o
r
Cu
r
r
e
n
t
(
A
)
V
CE
Collector-Emitter Voltage (V)
1oz Cu
Note: a
2oz Cu
Note: e
Derating Curve
T
amb
=25C
M
a
x
Pow
e
r
D
i
s
s
i
pa
t
i
on
(
W
)
Temperature (C)
D=0.2
D=0.5
D=0.1
Transient Thermal Impedance
Single Pulse
D=0.05
T
h
e
r
m
a
l
R
e
si
st
a
n
ce
(
C
/
W
)
Pulse Width (s)
Thermal Resistance v Board Area
1oz copper
2oz copper
T
h
e
r
m
a
l
R
e
si
st
a
n
ce
(
C
/
W
)
Board Cu Area (sqcm)
1oz copper
2oz copper
Power Dissipation v Board Area
T
amb
=25C
T
j max
=150C
Continuous
P
D
D
i
s
s
i
pa
t
i
on
(
W
)
Board Cu Area (sqcm)
CHARACTERISTICS
ZXT1M322
ISSUE 2 - JUNE 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-20
-35
V
I
C
=-100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
-12
-25
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-7.5
-8.5
V
I
E
=-100 A
Collector Cut-Off Current
I
CBO
-25
nA
V
CB
=-16V
Emitter Cut-Off Current
I
EBO
-25
nA
V
EB
=-6V
Collector Emitter Cut-Off Current
I
CES
-25
nA
V
CES
=-10V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-10
-100
-100
-195
-240
-17
-140
-150
-300
-300
mV
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-1.5A, I
B
=-50mA*
I
C
=-3A, I
B
=-50mA*
I
C
=-4A, I
B
=-150mA*
Base-Emitter Saturation Voltage
V
BE(sat)
-0.97
-1.05
V
I
C
=-4A, I
B
=-150mA*
Base-Emitter Turn-On Voltage
V
BE(on)
-0.87
-0.95
V
I
C
=-4A, V
CE
=-2V*
Static Forward Current Transfer
Ratio
h
FE
300
300
180
60
45
475
450
275
100
70
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.1A, V
CE
=-2V*
I
C
=-2.5A, V
CE
=-2V*
I
C
=-8A, V
CE
=-2V*
I
C
=-10A, V
CE
=-2V*
Transition Frequency
f
T
100
110
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
21
30
pF
V
CB
=-10V, f=1MHz
Turn-On Time
t
(on)
70
ns
V
CC
=-6V, I
C
=-2A
I
B1
=I
B2
=-50mA
Turn-Off Time
t
(off)
130
ns
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
ZXT1M322
ISSUE 2 - JUNE 2002
5
1m
10m
100m
1
10
1m
10m
100m
1m
10m
100m
1
10
0.00
0.05
0.10
0.15
0.20
0.25
1m
10m
100m
1
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1m
10m
100m
1
10
0.4
0.6
0.8
1.0
1m
10m
100m
1
10
0.2
0.4
0.6
0.8
1.0
0
90
180
270
360
450
540
630
V
CE(SAT)
v I
C
Tamb=25C
I
C
/I
B
=100
I
C
/I
B
=50
I
C
/I
B
=10
V
CE
(
S
A
T
)
(V
)
I
C
Collector Current (A)
V
BE(SAT)
v I
C
I
C
/I
B
=50
100C
25C
-55C
V
CE
(
S
A
T
)
(V
)
I
C
Collector Current (A)
h
FE
v I
C
V
CE
=2V
-55C
25C
100C
N
o
r
m
a
lis
e
d
G
a
in
I
C
Collector Current (A)
25C
V
CE(SAT)
v I
C
I
C
/I
B
=50
100C
-55C
V
BE
(
S
A
T
)
(V
)
I
C
Collector Current (A)
V
BE(ON)
v I
C
V
CE
=2V
100C
25C
-55C
V
B
E
(
ON)
(V
)
I
C
Collector Current (A)
Typ
i
c
a
l
G
a
i
n
(
h
FE
)
CHARACTERISTICS
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