1
S E M I C O N D U C T O R S
SUMMARY
PNP-- V
CEO
= -70V; R
SAT
=
117m ; I
C
= -2.5A
DESCRIPTION
Packaged in the new innovative 2mm x 2mm MLP (Micro Leaded Package) outline,
this new 4th generation low saturation PNP transistor offers extremely low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
Additionally users gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower Package Height (0.9mm nom)
Reduced component count
FEATURES
Low Equivalent On Resistance
Extremely Low Saturation Voltage (-220mV max @1A)
h
FE
specified up to 3A
I
C
=2.5A Continuous Collector Current
2mm x 2mm MLP
APPLICATIONS
DC - DC Converters
DC - DC Modules
Power switches
Motor control
DEVICE MARKING
S4
ZXT4M322
ISSUE 1 - JUNE 2003
MPPS
TM
Miniature Package Power Solutions
70V PNP LOW SATURATION TRANSISTOR
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXTD4M322TA
7"
8mm
3000
ZXTD4M322TC
13"
8mm
10000
ORDERING INFORMATION
Underside View
MLP322
ZXT4M322
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2003
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)
R
JA
83
C/W
Junction to Ambient
(b)
R
JA
51
C/W
Junction to Ambient
(d)
R
JA
125
C/W
Junction to Ambient
(e)
R
JA
42
C/W
NOTES
(a) For a single device surface mounted on
10
sq cm 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached.
(b) For a single device surface mounted on
10
sq cm 1oz copper on FR4 PCB, in still air conditions measured at t 5 secs with all exposed pads
attached.
(c) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10 sq cm 1oz copper FR4 PCB, in still air conditions with minimal lead connections only.
(e) For a single device surface mounted on 65 sq cm 2oz copper FR4 PCB, in still air conditions with all exposed pads attached.
(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in
the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight and
1mm wide tracks is Rth= 300C/W giving a power rating of Ptot=420mW
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V
CBO
-70
V
Collector-Emitter Voltage
V
CEO
-70
V
Emitter-Base Voltage
V
EBO
-7.5
V
Peak Pulse Current
I
CM
-3
A
Continuous Collector Current
(a)
I
C
-2.5
A
Base Current
I
B
-1000
mA
Power Dissipation at TA=25C
(a)
Linear Derating Factor
P
D
1.5
12
W
mW/ C
Power Dissipation at TA=25C
(b)
Linear Derating Factor
P
D
2.45
19.6
W
mW/ C
Power Dissipation at TA=25C
(d)
Linear Derating Factor
P
D
1
8
W
mW/ C
Power Dissipation at TA=25C
(e)
Linear Derating Factor
P
D
3
24
W
mW/ C
Operating & Storage Temperature Range
T
j
:T
stg
-55 to +150
C
Junction Temperature
T
j
150
C
ABSOLUTE MAXIMUM RATINGS
ZXT4M322
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2003
3
TYPICAL CHARACTERISTICS
ZXT4M322
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-Base Breakdown Voltage
V
(BR)CBO
-70
-150
V
I
C
=-100 A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-70
-125
V
I
C
=-10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
-7.5
-8.5
V
I
E
=-100 A
Collector Cut-Off Current
I
CBO
-25
nA
V
CB
=-55V
Emitter Cut-Off Current
I
EBO
-25
nA
V
EB
=-6V
Collector Emitter Cut-Off Current
I
CES
-25
nA
V
CE
=-55V
Collector-Emitter Saturation Voltage
V
CE(sat)
-35
-135
-140
-175
-50
-200
-220
-260
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-0.5A, I
B
=-20mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1.5A, I
B
=-200mA*
Base-Emitter Saturation Voltage
V
BE(sat)
-0.94
-1.05
V
I
C
=-1.5A, I
B
=-200mA*
Base-Emitter Turn-On Voltage
V
BE(on)
-0.78
-1.00
V
I
C
=-1.5A, V
CE
=-5V*
Static Forward Current Transfer Ratio
h
FE
300
300
175
40
470
450
275
60
10
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-1.5A, V
CE
=-5V*
I
C
=-3A, V
CE
=-5V*
Transition Frequency
f
T
150
180
MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
14
20
pF
V
CB
=-10A, f=1MHz
Turn-On Time
t
(on)
40
ns
V
CC
=-50V, I
C
=-1A
I
B1
=I
B2
=-50mA
Turn-Off Time
t
(off)
700
ns
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
2%
ZXT4M322
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2003
5
0.6
25C
I
C
/I
B
=50
I
C
/I
B
=20
I
C
/I
B
=10
I
C
/I
B
=10
I
C
/I
B
=5
100C
V
CE
=5V
V
CE
=5V
25C
-55C
-55C
25C
100C
-55C
25C
100C
0.5
0.4
0.3
0.2
0.1
0.0
1mA
10mA
100mA
Collector Current
V
CE
(VOLTS)
V
BE(SAT)
vs I
C
1A
10A
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1mA
10mA
100mA
Collector Current
V
CE
(VOLTS)
V
CE(SAT)
vs I
C
1A
10A
I
C
/I
B
=5
100C
25C
-55C
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1mA
10mA
100mA
Collector Current
V
BE
(VOLTS)
V
BE(SAT)
vs I
C
1A
10A
D.C.
1s
100ms
10ms
1ms
100s
10
SINGLE PULSE TEST T
amb
= 25 deg C
1.0
0.1
0.01
0.1
1
10
V
CE
(VOLTS)
I
C
(AMPS)
Safe Operating Area
100
1.0
0.8
0.6
0.4
0.2
0.0
1mA
10mA
100mA
Collector Current
V
BE
(VOLTS)
V
BE(ON)
vs I
C
1A
10A
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
1mA
10mA
100mA
Collector Current
Normalised Gain
Typical Gain (hFE)
h
FE(SAT)
vs I
C
1A
10A
450
225
TYPICAL CHARACTERISTICS
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