1
S E M I C O N D U C T O R S
SUMMARY
BV
CEO
= 45V : R
SAT
= 77m ; I
C
= 3A
DESCRIPTION
Packaged in the D-Pak outline this high gain 45V NPN transistor offers low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
FEATURES
3 Amps continuous current
Up to 6 Amps peak current
Low saturation voltages
High gain
APPLICATIONS
DC - DC Converters
MOSFET gate drivers
Charging circuits
Power switches
Siren drivers
DEVICE MARKING
ZXT690B
ZXT690BK
ISSUE 1 - JUNE 2003
45V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK
DEVICE
REEL
SIZE
TAPE WIDTH
QUANTITY PER REEL
ZXT690BKTC
13"
16mm embossed
2500 units
ORDERING INFORMATION
PINOUT
DPAK
ZXT690BK
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2003
2
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
BV
CBO
60
V
Collector-Emitter Voltage
BV
CEO
45
V
Emitter-Base Voltage
BV
EBO
5
V
Continuous Collector Current
I
C
3
A
Peak Pulse Current
I
CM
6
A
Base Current
I
B
0.5
A
Power Dissipation at T
A
=25C
(a)
Linear Derating Factor
Thermal Resistance Junction to Ambient
P
D
2.1
16.8
59
W
mW/C
C/W
Power Dissipation at T
A
=25C
(b)
Linear Derating Factor
Thermal Resistance Junction to Ambient
P
D
3.0
24.4
41
W
mW/C
C/W
Power Dissipation at T
A
=25C
(c)
Linear Derating Factor
Thermal Resistance Junction to Ambient
P
D
3.9
30.9
32
W
mW/C
C/W
Operating and Storage Temperature Range
T
j
, T
stg
-55 to +150
C
NOTES
(a)
For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b)
For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 1oz copper in still
air conditions.
(c)
For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper in still
air conditions.
ABSOLUTE MAXIMUM RATINGS
ZXT690BK
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2003
3
TYPICAL CHARACTERISTICS
ZXT690BK
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-Base Breakdown Voltage
BV
CBO
60
145
V
I
C
= 100 A
Collector-Emitter Breakdown Voltage
BV
CEO
45
65
V
I
C
= 10mA
(1)
Emitter-Base Breakdown Voltage
BV
EBO
5
8.2
V
I
E
= 100 A
Collector Cut-Off Current
I
CBO
<1
20
nA
V
CB
= 35V
Collector Cut-Off Current
I
CES
<1
20
nA
V
CB
= 35V
Emitter Cut-Off Current
I
EBO
<1
20
nA
V
EB
= 4V
Collector-Emitter Saturation Voltage
V
CE(SAT)
50
240
210
230
85
360
320
350
mV
mV
mV
mV
I
C
= 0.1A, I
B
= 0.5mA
(1)
I
C
= 1A, I
B
= 5mA
(1)
I
C
= 2A, I
B
= 40mA
(1)
I
C
= 3A, I
B
= 150mA
Base-Emitter Saturation Voltage
V
BE(SAT)
1.0
1.2
mV
I
C
= 3A, I
B
= 150mA
(1)
Base-Emitter Turn-On Voltage
V
BE(ON)
0.9
1.1
mV
I
C
= 3A, V
CE
= 2V
(1)
Static Forward Current Transfer Ratio
h
FE
500
400
150
60
I
C
= 100mA, V
CE
= 2V
(1)
I
C
= 1A, V
CE
= 2V
(1)
I
C
= 2A, V
CE
= 2V
(1)
I
C
= 3A, V
CE
= 2V
(1)
Transition Frequency
f
T
150
MHz I
C
= 50mA, V
CE
= 5V
f = 50MHz
Output Capacitance
C
OBO
16
pF
V
CB
= 10V, f = 1MHz
(1)
Switching Times
t
ON
t
OFF
33
1300
ns
ns
I
C
= 500mA, V
CC
= 10V,
I
B1
= I
B2
= 50mA
NOTES
(1)
Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
TYPICAL CHARACTERISTICS
ZXT690BK
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2003
5
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