1
S E M I C O N D U C T O R S
SUMMARY
BV
CEO
= 30V : R
SAT
= 33m
typical; I
C
= 7A
DESCRIPTION
Packaged in the D-Pak outline this high current high performance 30V NPN
transistor offers low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
7 amps continuous current
Up to 20 amps peak current
Low equivalent on resistance
Low saturation voltages
Excellent h
FE
performance up to 20 amps
APPLICATIONS
DC - DC converters
DC - DC modules
Power switches
Motor control
Automotive circuits
DEVICE MARKING
ZXT849
ZXT849K
ISSUE 2 - DECEMBER 2003
30V NPN LOW SATURATION TRANSISTOR IN D-PAK
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZXT849KTC
13"
16mm
2500 units/reel
ORDERING INFORMATION
PINOUT
TOP VIEW
DPAK
ZXT849K
S E M I C O N D U C T O R S
ISSUE 2 - DECEMBER 2003
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R
JA
59
C/W
Junction to ambient
(b)
R
JA
39
C/W
Junction to ambient
(c)
R
JA
30
C/W
NOTES
(a) (For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
(c) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper in still air conditions.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
80
V
Collector-emitter voltage
BV
CER
80
V
Collector-emitter voltage
BV
CEO
30
V
Emitter-base voltage
BV
EBO
7
V
Peak pulse current
I
CM
20
A
Continuous collector current
(b)
I
C
7
A
Base current
I
B
0.5
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
2.1
16.8
W
mW/C
Power dissipation at T
A
=25C
(b)
Linear derating factor
P
D
3.2
25.6
W
mW/C
Power dissipation at T
A
=25C
(c)
Linear derating factor
P
D
4.2
33.6
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZXT849K
S E M I C O N D U C T O R S
ISSUE 2 - DECEMBER 2003
3
TYPICAL CHARACTERISTICS
ZXT849K
S E M I C O N D U C T O R S
ISSUE 2 - DECEMBER 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
80
125
V
I
C
=100 A
Collector-emitter breakdown voltage
BV
CER
80
125
V
I
C
=1 A, R
BE
=
1k
Collector-emitter breakdown voltage
BV
CEO
30
40
V
I
C
=10mA*
Emitter-base breakdown voltage
BV
EBO
7
8
V
I
E
=100 A
Collector cut-off current
I
CBO
20
nA
V
CB
=70V
Collector cut-off current
I
CER
20
nA
V
CB
=70V, R
BE
=
1k
Emitter cut-off current
I
EBO
10
nA
V
EB
=6V
Collector-emitter saturation voltage
V
CE(SAT)
27
55
115
230
40
80
180
280
mV
mV
mV
mV
I
C
=0.5A, I
B
=20mA*
I
C
=1A, I
B
=20mA*
I
C
=2A, I
B
=20mA*
I
C
=7A, I
B
=350mA*
Base-emitter saturation voltage
V
BE(SAT)
1.04
1.15
mV
I
C
=7A, I
B
=350mA*
Base-emitter turn-on voltage
V
BE(ON)
0.93
1.1
mV
I
C
=7A, V
CE
=1V*
Static forward current transfer ratio
H
FE
100
100
100
40
190
200
165
90
300
I
C
=10mA, V
CE
=1V*
I
C
=1A, V
CE
=1V*
I
C
=7A, V
CE
=1V*
I
C
=20A, V
CE
=2V*
Transition frequency
f
T
100
MHz I
C
=100mA, V
CE
=10V
f=50MHz
Output capacitance
C
OBO
75
pF
V
CB
=10V, f=1MHz*
Switching times
t
ON
t
OFF
45
630
nS
nS
I
C
=1A, V
CC
=10V,
I
B1
=I
B2
=100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
ZXT849K
S E M I C O N D U C T O R S
ISSUE 2 - DECEMBER 2003
5
TYPICAL CHARACTERISTICS
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