ZXTD09N50DE6
E6
1
ISSUE 2 - JUNE 2001
SuperSOT
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=50V; R
SAT
= 160m ; I
C
= 1A
DESCRIPTION
A dual NPN low saturation transistor combination contained in a single 6 lead
SOT23 package. Each transistor is the equivalent to the ZUMT619 device.
FEATURES
Low Equivalent On Resistance
Low Saturation Voltage
I
C
=1A Continuous Collector Current
SOT23-6 package
APPLICATIONS
LCD Backlighting inverter circuits
Boost functions in DC-DC converters
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXTD09N50DE6TA
7
8mm embossed
3000 units
ZXTD09N50DE6TC
13
8mm embossed
10000 units
DEVICE MARKING
D619
Top View
SOT23-6
B2
E2
B1
C2
E1
C1
C1
E1
B1
C2
E2
B2
ISSUE 2 - JUNE 2001
ZXTD09N50DE6
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1.0
A
Base Current
I
B
200
mA
Power Dissipation at TA=25C (a)(d)
Linear Derating Factor
P
D
0.90
7.2
W
mW/C
Power Dissipation at TA=25C (a)(e)
Linear Derating Factor
P
D
1.1
8.8
W
mW/C
Power Dissipation at TA=25C (b)(d)
Linear Derating Factor
P
D
1.7
13.6
W
mW/C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
R
JA
139
C/W
Junction to Ambient (b)(d)
R
JA
73
C/W
Junction to Ambient (a)(e)
R
JA
113
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 2 - JUNE 2001
ZXTD09N50DE6
E6
3
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
50
V
I
C
= 100
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
50
V
I
C
= 10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
V
I
E
= 100
A
Collector Cut-Off Current I
CBO
10
nA
V
CB
= 40V
Emitter Cut-Off Current
I
EBO
10
nA
V
EB
= 4V
Collector Emitter Cut-Off
Current
I
CES
10
nA
V
CES= 40V
Collector-Emitter
Saturation Voltage
V
CE(sat)
24
60
120
160
35
80
200
270
mV
mV
mV
mV
I
C
= 100mA, I
B
= 10mA*
I
C
= 250mA, I
B
= 10mA*
I
C
= 500mA, I
B
= 10mA*
I
C
= 1A, I
B
= 50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
940
1100
mV
I
C
= 1A, I
B
= 50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
850
1100
mV
I
C
= 1A, V
CE
= 2V*
Static Forward Current
Transfer
Ratio
h
FE
200
300
200
75
20
420
450
350
130
60
I
C
=10mA, V
CE
= 2V*
I
C
= 100mA, V
CE
=2 V*
I
C
= 500mA, V
CE
=2V*
I
C
= 1A, V
CE
= 2V*
I
C
= 1.5A, V
CE
=2 V*
Transition
Frequency
f
T
215
MHz
I
C
= 50mA, V
CE
=10V
f= 100MHz
Output Capacitance
C
obo
10
pF
V
CB
= 10V, f=1MHz
Turn-On Time
t
(on)
150
ns
V
CC
=10 V, I
C
= 1A
I
B1
=I
B2
=100mA
Turn-Off Time
t
(off)
425
ns
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
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