SUMMARY
NPN Transistor
V
CEO
= 15V; R
SAT
= 45m ;
C
= 4.5A
PNP Transistor
V
CEO
= -12V; R
SAT
= 60m ;
C
= -4A
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP (Micro Leaded Package),
these low saturation NPN / PNP combination dual transistors offer lower on
state losses making them ideal for use in DC-DC circuits and various driving
and power-management functions.
Users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (0.9mm nom)
Reduced component count
FEATURES
Low Equivalent On Resistance
Extremely Low Saturation Voltage (100mV max @1A--NPN)
H
FE
specified up to 12A
I
C
= 4.5A Continuous Collector Current
3mm x 2mm MLP
APPLICATIONS
DC - DC Converters
Charging circuits
Power switches
Motor control
LED Backlighting circuits
DEVICE MARKING
DA1
ZXTDA1M832
ISSUE 1 - JUNE 2002
MPPSTM Miniature Package Power Solutions
DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR
COMBINATION
1
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXTDA1M832TA
7
8mm
3000
ZXTDA1M832TC
13
8mm
10000
ORDERING INFORMATION
3mm x 2mm Dual Die MLP
3mm x 2mm Dual MLP
underside view
PINOUT
B 2
C 2
E 2
ZXTDA1M832
ISSUE 1 - JUNE 2002
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(f)
R
JA
83.3
C/W
Junction to Ambient (b)(f)
R
JA
51
C/W
Junction to Ambient (c)(f)
R
JA
125
C/W
Junction to Ambient (d)(f)
R
JA
111
C/W
Junction to Ambient (d)(g)
R
JA
73.5
C/W
Junction to Ambient (e)(g)
R
JA
41.7
C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250C/W giving a power rating of Ptot = 500mW.
PARAMETER
SYMBOL
NPN
PNP
UNIT
Collector-Base Voltage
V
CBO
40
-20
V
Collector-Emitter Voltage
V
CEO
15
-12
V
Emitter-Base Voltage
V
EBO
7.5
-7.5
V
Peak Pulse Current
I
CM
15
-12
A
Continuous Collector Current (a)(f)
I
C
4.5
-4
A
Continuous Collector Current (b)(f)
I
C
5
-4.4
A
Base Current
I
B
1000
mA
Power Dissipation at TA=25C (a)(f)
Linear Derating Factor
P
D
1.5
12
W
mW/C
Power Dissipation at TA=25C (b)(f)
Linear Derating Factor
P
D
2.45
19.6
W
mW/C
Power Dissipation at TA=25C (c)(f)
Linear Derating Factor
P
D
1
8
W
mW/C
Power Dissipation at TA=25C (d)(f)
Linear Derating Factor
P
D
1.13
8
W
mW/C
Power Dissipation at TA=25C (d)(g)
Linear Derating Factor
P
D
1.7
13.6
W
mW/C
Power Dissipation at TA=25C (e)(g)
Linear Derating Factor
P
D
3
24
W
mW/C
Storage Temperature Range
T
stg
-55 to +150
C
Junction Temperature
T
j
150
C
ABSOLUTE MAXIMUM RATINGS.
ZXTDA1M832
ISSUE 1 - JUNE 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
40
70
V
I
C
=100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
15
18
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
7.5
8.2
V
I
E
=100 A
Collector Cut-Off Current
I
CBO
25
nA
V
CB
=32V
Emitter Cut-Off Current
I
EBO
25
nA
V
EB
=6V
Collector Emitter Cut-Off Current
I
CES
25
nA
V
CE
=12V
Collector-Emitter Saturation
Voltage
V
CE(sat)
8
70
165
240
14
100
200
280
mV
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=3A, I
B
=50mA
I
C
=4.5A, I
B
=50mA
Base-Emitter Saturation Voltage
V
BE(sat)
0.94
1.00
V
I
C
=4.5A, I
B
=50mA*
Base-Emitter Turn-On Voltage
V
BE(on)
0.88
0.95
V
I
C
=4.5A, V
CE
=2V*
Static Forward Current Transfer
Ratio
h
FE
200
300
200
150
415
450
320
240
80
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=12A, V
CE
=2V*
Transition Frequency
f
T
80
120
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
30
40
pF
V
CB
=-10V, f=1MHz
Turn-On Time
t
(on)
120
ns
V
CC
=-6V, I
C
=-1A
I
B1
=I
B2
=-10mA
Turn-Off Time
t
(off)
160
ns
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
*Measured under pulsed conditions.
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