SUMMARY
NPN Transistor
V
CEO
= 80V; R
SAT
= 68m ;
C
= 3.5A
PNP Transistor
V
CEO
= -70V; R
SAT
= 117m ;
C
= -2.5A
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP (Micro Leaded Package),
these low saturation NPN / PNP combination dual transistors offer lower on
state losses making them ideal for use in DC-DC circuits and various driving
and power-management functions.
Users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (0.9mm nom)
Reduced component count
FEATURES
Low Equivalent On Resistance
Extremely Low Saturation Voltage (-185mV max @ 1A--NPN)
H
FE
specified up to -5A
I
C
= -3.5A Continuous Collector Current
3mm x 2mm MLP
APPLICATIONS
DC - DC Converters
Charging circuits
Power switches
Motor control
DEVICE MARKING
DE4
ZXTDE4M832
ISSUE 1 - JUNE 2002
MPPSTM Miniature Package Power Solutions
DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR
COMBINATION
1
B1
C1
E1
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXTDE4M832TA
7
8mm
3000
ZXTDE4M832TC
13
8mm
10000
ORDERING INFORMATION
3mm x 2mm Dual Die MLP
3mm x 2mm Dual MLP
underside view
PINOUT
B2
C2
E2
ZXTDE4M832
ISSUE 1 - JUNE 2002
2
PARAMETER
SYMBOL
NPN
PNP
UNIT
Collector-Base Voltage
V
CBO
100
-70
V
Collector-Emitter Voltage
V
CEO
80
-70
V
Emitter-Base Voltage
V
EBO
7.5
-7.5
V
Peak Pulse Current
I
CM
5
-3
A
Continuous Collector Current (a)(f)
I
C
3.5
-2.5
A
Base Current
I
B
1000
mA
Power Dissipation at TA=25C (a)(f)
Linear Derating Factor
P
D
1.5
12
W
mW/C
Power Dissipation at TA=25C (b)(f)
Linear Derating Factor
P
D
2.45
19.6
W
mW/C
Power Dissipation at TA=25C (c)(f)
Linear Derating Factor
P
D
1
8
W
mW/C
Power Dissipation at TA=25C (d)(f)
Linear Derating Factor
P
D
1.13
9
W
mW/C
Power Dissipation at TA=25C (d)(g)
Linear Derating Factor
P
D
1.7
13.6
W
mW/C
Power Dissipation at TA=25C (e)(g)
Linear Derating Factor
P
D
3
24
W
mW/C
Storage Temperature Range
T
stg
-55 to +150
C
Junction Temperature
T
j
150
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(f)
R
JA
83.3
C/W
Junction to Ambient (b)(f)
R
JA
51
C/W
Junction to Ambient (c)(f)
R
JA
125
C/W
Junction to Ambient (d)(f)
R
JA
111
C/W
Junction to Ambient (d)(g)
R
JA
73.5
C/W
Junction to Ambient (e)(g)
R
JA
41.7
C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250C/W giving a power rating of Ptot = 500mW.
ZXTDE4M832
ISSUE 1 - JUNE 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
100
180
V
I
C
=100 A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
80
110
V
I
C
=10mA*
Emitter-Base Breakdown Voltage
V
(BR)EBO
7.5
8.2
V
I
E
=100 A
Collector Cut-Off Current
I
CBO
25
nA
V
CB
=80V
Emitter Cut-Off Current
I
EBO
25
nA
V
EB
=6V
Collector Emitter Cut-Off Current
I
CES
25
nA
V
CE
=65V
Collector-Emitter Saturation
Voltage
V
CE(sat)
15
45
145
160
240
20
60
185
200
325
mV
mV
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=0.5A, I
B
=50mA*
I
C
=1A, I
B
=20mA
I
C
=1.5A, I
B
=50mA
I
C
=3.5A, I
B
=300mA
Base-Emitter Saturation Voltage
V
BE(sat)
1.09
1.175
V
I
C
=3.5A, I
B
=300mA*
Base-Emitter Turn-On Voltage
V
BE(on)
0.96
1.05
V
I
C
=3.5A, V
CE
=2V*
Static Forward Current Transfer
Ratio
h
FE
200
300
110
60
20
450
450
170
90
30
10
900
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=1.5A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
Transition Frequency
f
T
100
160
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
11.5
18
pF
V
CB
=10V, f=1MHz
Turn-On Time
t
(on)
86
ns
V
CC
=10V, I
C
=1A
I
B1
=I
B2
=25mA
Turn-Off Time
t
(off)
1128
ns
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated).
*Measured under pulsed conditions.
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