1
S E M I C O N D U C T O R S
SUMMARY
BV
CEO
= 60V : R
SAT
= 34m ; I
C
= 4.5A
DESCRIPTION
Packaged in the E-line outline this new low saturation 60V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
Extemely low equivalent on-resistance; R
SAT
= 34m
at 5A
4.5 amps continuous current
Up to 15 amps peak current
Very low saturation voltages
APPLICATIONS
Emergency lighting circuits
Motor driving (including DC fans)
Solenoid, relay and actuator drivers
DC modules
Backlight inverters
DEVICE MARKING
ZXT
N20
10
ZXTN2010A
ISSUE 1 - JUNE 2005
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE
DEVICE
QUANTITY
ZXTN2010ASTOA
ZXTN2010ASTZ
2000 units / reel
2000 units / carton
ORDERING INFORMATION
PINOUT
E-LINE
ZXTN2010A
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2005
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R
JA
125
C/W
Junction to ambient
(b)
R
JA
175
C/W
NOTES
(a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
Collector lead length to solder point 4mm.
(b For a device mounted in a socket in still air conditions. Collector lead length 10mm.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
150
V
Collector-emitter voltage
BV
CEO
60
V
Emitter-base voltage
BV
EBO
7
V
Continuous collector current
(a)
I
C
4.5
A
Peak pulse current
I
CM
15
A
Practical power dissipation
(a)
Linear derating factor
P
D
1.0
8
W
mW/C
Power dissipation at T
A
=25C
(b)
Linear derating factor
P
D
0.71
5.7
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZXTN2010A
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2005
3
CHARACTERISTICS
ZXTN2010A
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
150
190
V
I
C
=100 A
Collector-emitter breakdown voltage
BV
CER
150
190
V
I
C
=1 A, RB
1k
Collector-emitter breakdown voltage
BV
CEO
60
80
V
I
C
=10mA*
Emitter-base breakdown voltage
BV
EBO
7
8.1
V
I
E
=100 A
Collector cut-off current
I
CBO
20
0.5
nA
A
V
CB
=120V
V
CB
=120V, T
amb
=100 C
Collector cut-off current
I
CER
R
1k
20
0.5
nA
A
V
CB
=120V
V
CB
=120V, T
amb
=100 C
Emitter cut-off current
I
EBO
10
nA
V
EB
=6V
Collector-emitter saturation voltage
V
CE(SAT)
18
40
45
95
170
30
55
65
130
210
mV
mV
mV
mV
mV
I
C
=100mA, I
B
=5mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=50mA*
I
C
=2A, I
B
=50mA*
I
C
=5A, I
B
=200mA*
Base-emitter saturation voltage
V
BE(SAT)
950
1050
mV
I
C
=4A, I
B
=200mA*
Base-emitter turn-on voltage
V
BE(ON)
840
950
mV
I
C
=4A, V
CE
=1V*
Static forward current transfer ratio
h
FE
100
100
55
20
200
200
105
40
300
I
C
=10mA, V
CE
=1V*
I
C
=2A, V
CE
=1V*
I
C
=5A, V
CE
=1V*
I
C
=10A, V
CE
=1V*
Transition frequency
f
T
130
MHz I
C
=100mA, V
CE
=10V
f=50MHz
Output capacitance
C
OBO
31
pF
V
CB
=10V, f=1MHz*
Switching times
t
ON
t
OFF
42
760
ns
ns
I
C
=1A, V
CC
=10V,
I
B1
=I
B2
=100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
ZXTN2010A
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2005
5
TYPICAL CHARACTERISTICS
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