1
S E M I C O N D U C T O R S
SUMMARY
BV
CEO
= 100V : R
SAT
= 36m ; I
C
= 6A
DESCRIPTION
Packaged in the SOT223 outline this new low saturation 100V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
6 amps continuous current
Up to 10 amps peak current
Very low saturation voltages
APPLICATIONS
Motor driving
Line switching
High side switches
Subscriber line interface cards (SLIC)
DEVICE MARKING
ZXTN
2011
ZXTN2011G
ISSUE 1 - JUNE 2005
100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION
TRANSISTOR IN SOT223
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZXTN2011GTA
7"
12mm
embossed
1,000 units
ZXTN2011GTC
13"
4,000 units
ORDERING INFORMATION
PINOUT
TOP VIEW
SOT223
ZXTN2011G
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2005
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R
JA
42
C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
200
V
Collector-emitter voltage
BV
CEO
100
V
Emitter-base voltage
BV
EBO
7
V
Continuous collector current
(a)
I
C
6
A
Peak pulse current
I
CM
10
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
3.0
24
W
mW/C
Power dissipation at T
A
=25C
(b)
Linear derating factor
P
D
1.6
12.8
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
ZXTN2011G
S E M I C O N D U C T O R S
ISSUE 1 - JUNE 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
200
235
V
I
C
=100 A
Collector-emitter breakdown voltage
BV
CER
200
235
V
I
C
=1 A, RB
1k
Collector-emitter breakdown voltage
BV
CEO
100
115
V
I
C
=10mA*
Emitter-base breakdown voltage
BV
EBO
7
8.1
V
I
E
=100 A
Collector cut-off current
I
CBO
20
0.5
nA
A
V
CB
=150V
V
CB
=150V,T
amb
=100 C
Collector cut-off current
I
CER
R
1k
20
0.5
nA
A
V
CB
=150V
V
CB
=150V,T
amb
=100 C
Emitter cut-off current
I
EBO
10
nA
V
EB
=6V
Collector-emitter saturation voltage
V
CE(SAT)
21
50
95
180
35
65
125
220
mV
mV
mV
mV
I
C
=0.1A, I
B
=5mA*
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=100mA*
I
C
=5A, I
B
=500mA*
Base-emitter saturation voltage
V
BE(SAT)
1020
1120
mV
I
C
=5A, I
B
=500mA*
Base-emitter turn-on voltage
V
BE(ON)
920
1000
mV
I
C
=5A, V
CE
=2V*
Static forward current transfer ratio
H
FE
100
100
30
10
230
200
60
20
300
I
C
=10mA, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
Transition frequency
f
T
130
MHz I
C
=100mA, V
CE
=10V
f=50MHz
Output capacitance
C
OBO
26
pF
V
CB
=10V, f=1MHz*
Switching times
t
ON
t
OFF
41
1010
ns
I
C
=1A, V
CC
=10V,
I
B1
=I
B2
=100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
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