Issue 4 - January 2006
1
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Zetex Semiconductors plc 2006
ZXTN2020F
100V, SOT23, NPN medium power transistor
Summary
V
(BR)CEV
> 160V, V
(BR)CEO
> 100V
I
C(cont)
= 4A
R
CE(sat)
= 30m typical
V
CE(sat)
< 50mV @ 1A
P
D
= 1.2W
Complementary part number: ZXTP2029F
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
Higher power dissipation SOT23 package
High peak current
Low saturation voltage
160V forward blocking voltage
Applications
MOSFET and IGBT gate driving
Motor drive
Relay, lamp and solenoid drive
Ordering information
Device marking
853
Device
Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXTN2020FTA
7
8
3,000
Pinout - top view
ZXTN2020F
Issue 4 - January 2006
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Zetex Semiconductors plc 2006
Absolute maximum ratings
Thermal resistance
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
CBO
160
V
Collector-emitter voltage
V
(BR)CEV
160
V
Collector-emitter voltage
V
CEO
100
V
Emitter-base voltage
V
EBO
7
V
Peak pulse current
I
CM
12
A
Continuous collector current
(a)
I
C
4
A
Base current
I
B
1
A
Power dissipation @ T
A
=25
o
C
(a)
Linear derating factor
P
D
1.0
8
W
mW/
o
C
Power dissipation @ T
A
=25
o
C
(b)
Linear derating factor
P
D
1.2
9.6
W
mW/
o
C
Power dissipation @ T
A
=25
o
C
(c)
Linear derating factor
P
D
1.56
12.5
W
mW/
o
C
Operating and storage temperature
T
j
:T
stg
-55 to +150
o
C
Parameter
Symbol
Value
Unit
Junction to ambient
(a)
NOTES:
(a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
R
JA
125
o
C/W
Junction to ambient
(b)
(b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
R
JA
104
o
C/W
Junction to ambient
(c)
(c) as (b) above measured at t<5secs.
R
JA
80
o
C/W
ZXTN2020F
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Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
V
(BR)CBO
160
200
V
I
C
=100
A
Collector-emitter breakdown
voltage
V
(BR)CEV
160
200
V
I
C
=1
A, -1V< V
BE
<+0.3V
Collector-emitter breakdown
voltage
V
(BR)CEO
100
115
V
I
C
=10mA
(a)
NOTES:
(a) Measured under pulsed conditions. Pulse width=300 S. Duty cycle
2%.
Emitter-base breakdown
voltage
V
(BR)EBO
7
8
V
I
E
=100
A
Collector-emitter cut-off
current
I
CEV
<1
20
nA
V
CES
=128V,
V
BE
= -1V
Collector-base cut-off
current
I
CBO
<1
20
nA
V
CB
=128V
Emitter-base cut-off current
I
EBO
<1
10
nA
V
EB
=6V
Static forward current
transfer ratio
H
FE
100
100
35
220
200
60
13
300
I
C
=10mA, V
CE
=2V
(a)
I
C
=1A, V
CE
=2V
(a)
I
C
=4A, V
CE
=2V
(a)
I
C
=10A, V
CE
=2V
(a)
Collector-emitter saturation
voltage
V
CE(sat)
20
40
85
120
30
50
105
150
mV
mV
mV
mV
I
C
=0.1A, I
B
=5mA
(a)
I
C
=1A, I
B
=100mA
(a)
I
C
=2A, I
B
=100mA
(a)
I
C
=4A, I
B
=400mA
(a)
Base-emitter saturation
voltage
V
BE(sat)
0.94
1.05
V
I
C
=4A, I
B
=400mA
(a)
Base-emitter turn-on voltage V
BE(on)
0.84
0.94
V
I
C
=4A, V
CE
=2V
(a)
Transition frequency
f
T
130
MHz
Ic=100mA, V
CE
=10V,
f=50MHz
Output capacitance
C
obo
22
pF
V
CB
=10V, f=1MHz
Turnon time
t
(on)
37
ns
V
CC
=10V, I
C
=1A,
Turn-off time
t
(off)
910
ns
I
B1
=I
B2
=100mA
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