Issue 1 - May 2006
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Zetex Semiconductors plc 2006
ZXTN25015DFH
15V, SOT23, NPN medium power transistor
Summary
BV
CEX
> 30V
BV
CEO
> 15V
BV
ECO
> 4.5V
I
C(cont)
= 5A
V
CE(sat)
< 40 mV @ 1A
R
CE(sat)
= 25 m
P
D
= 1.25W
Complementary part number ZXTP25015DFH
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
High power dissipation SOT23 package
High gain
Low saturation voltage
Applications
LED driving
DC-DC converters
MOSFET and IGBT gate driving
Motor drive
Ordering information
Device marking
1A8
Device
Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXTN25015DFHTA
7
8 3,000
C
E
B
C
E
B
Pinout - top view
ZXTN25015DFH
Issue 1 - May 2006
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Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper, in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper, in still air conditions.
(d) As (c) above measured at t<5secs.
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
CBO
40
V
Collector-emitter voltage (forward blocking)
V
CEX
30
V
Collector-emitter voltage
V
CEO
15
V
Emitter-collector voltage (reverse blocking)
V
ECO
4.5
V
Emitter-base voltage
V
EBO
7
V
Continuous collector current
(c)
I
C
5
A
Peak pulse current
I
CM
15
A
Power dissipation at T
amb
= 25C
(a)
P
D
0.73
W
Linear derating factor
5.84
mW/C
Power dissipation at T
amb
= 25C
(b)
P
D
1.05
W
Linear derating factor
8.4
mW/C
Power dissipation at T
amb
= 25C
(c)
P
D
1.25
W
Linear derating factor
9.6
mW/C
Power dissipation at T
amb
= 25C
(d)
P
D
1.81
W
Linear derating factor
14.5
mW/C
Operating and storage temperature range
T
j
, T
stg
- 55 to 150
C
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to ambient
(a)
R
JA
171
C/W
Junction to ambient
(b)
R
JA
119
C/W
Junction to ambient
(c)
R
JA
100
C/W
Junction to ambient
(d)
R
JA
69
C/W
ZXTN25015DFH
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Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-emitter breakdown
voltage
BV
CEO
15
22
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
Collector-emitter breakdown
voltage (reverse blocking)
BV
ECX
6
8
V
I
E
= 100 A, R
BC
< 1k
or
0.25v > V
BC
> -0.25V
Collector-emitter breakdown
voltage (reverse blocking)
BV
ECO
4.5
5.3
V
I
E
= 100 A,
Emitter-base breakdown voltage BV
EBO
7
8.2
V
I
E
= 100 A
Collector cut-off current
I
CBO
<1
50
20
nA
A
V
CB
= 40V
V
CB
= 40V, T
amb
= 100C
Collector-emitter cut-off current
I
CEX
-
100
nA
V
CE
= 30V; R
BE
< 1k
or
-1V < V
BE
< 0.25V
Emitter cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(sat)
30
40
mV
I
C
= 1A, I
B
= 100mA
(*)
60
80
mV
I
C
= 1A, I
B
= 10mA
(*)
90
125
mV
I
C
= 2A, I
B
= 20mA
(*)
125
155
mV
I
C
= 5A, I
B
= 500mA
(*)
160
215
mV
I
C
= 5A, I
B
= 100mA
(*)
Base-emitter saturation voltage
V
BE(sat)
990
1090
mV
I
C
= 5A, I
B
= 500mA
(*)
Base-emitter turn-on voltage
V
BE(on)
805
900
mV
I
C
= 5A, V
CE
= 2V
(*)
Static forward current transfer
ratio
h
FE
300
450
900
I
C
= 10mA, V
CE
= 2V
(*)
300
400
I
C
= 2A, V
CE
= 2V
(*)
150
275
I
C
= 5A, V
CE
= 2V
(*)
25
40
I
C
= 15A, V
CE
= 2V
(*)
Transition frequency
f
T
150
240
MHz
I
C
= 50mA, V
CE
= 10V
f
= 50MHz
Output capacitance
C
OBO
22.7
30
pF
V
CB
= 10V, f
= 1MHz
(*)
Delay time
t
(d)
16
ns
V
CC
= 10V. I
C
= 3A, I
B1
=
I
B2
= 50mA.
Rise time
t
(r)
41
ns
Storage time
t
(s)
148
ns
Fall time
t
(f)
23
ns
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