SUMMARY
BV
CEO
= -20V : R
SAT
= 31m ; I
C
= -3.5A
DESCRIPTION
Packaged in the SOT23-6 outline this new low
saturation 20V PNP transistor offers extremely low on
state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
3.5 Amps continuous current
Extremely low saturation voltage (-70mV max @ 1A/100mA )
Up to 10 Amps peak current
Very low saturation voltages
APPLICATIONS
DC - DC converters
Battery charging
Power switches
Motor control
Power management functions
DEVICE MARKING
52
ZXTP2006E6
ISSUE 1 - JUNE 2005
20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6
1
SOT23-6
PINOUT
TOP VIEW
DEVICE
REEL
SIZE
TAPE WIDTH
QUANTITY PER REEL
ZXTP2006E6TA
7"
8mm embossed
3,000
ZXTP2006E6TC
13"
8mm embossed
10,000
ORDERING INFORMATION
ZXTP2006E6
ISSUE 1 - JUNE 2005
2
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
-25
V
Collector-emitter voltage
BV
CEO
-20
V
Emitter-base voltage
BV
EBO
-7.5
V
Continuous collector current
I
C
-3.5
A
Peak pulse current
I
CM
-10
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
1.1
8.8
W
mW/C
Power dissipation at T
A
=25C
(b)
Linear derating factor
P
D
1.7
13.6
W
mW/C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R
JA
113
C/W
Junction to ambient
(b)
R
JC
73
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) As above measured at t<5 seconds.
THERMAL RESISTANCE
ZXTP2006E6
ISSUE 1 - JUNE 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
-25
-49
V
I
C
= -100 A
Collector-emitter breakdown voltage
BV
CEO
-20
-43
V
I
C
= -10mA *
Emitter-base breakdown voltage
BV
EBO
-7.5
-8.4
V
I
E
= -100 A
Collector cut-off current
I
CBO
-100
nA
V
CB
= -20V
Collector cut-off current
I
CES
-100
nA
V
CB
= -20V
Emitter cut-off current
I
EBO
-100
nA
V
EB
= -6V
Collector-emitter saturation voltage
V
CE(SAT)
-10
-100
-110
-15
-140
-130
mV
mV
mV
I
C
= -0.1A, I
B
= -10mA*
I
C
= -1A, I
B
= -10mA*
I
C
= -3.5A, I
B
= -350mA*
Base-emitter saturation voltage
V
BE(SAT)
-0.96
-1.1
V
I
C
= -3.5A, I
B
= -350mA*
Base-emitter turn-on voltage
V
BE(ON)
-0.8
-0.9
V
I
C
= -3.5A, V
CE
= -2V *
Static forward current transfer ratio
h
FE
300
300
150
10
575
450
285
40
900
I
C
= -10mA, V
CE
= -2V *
I
C
= -1A, V
CE
= -2V *
I
C
= -3.5A, V
CE
= -2V *
I
C
= -10A, V
CE
= -2V *
Transition frequency
f
T
110
I
C
= -50mA, V
CE
= -10V
f = 50MHz
Output capacitance
C
OBO
45
pF
V
CB
= -10V, f = 1MHz *
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
NOTES
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
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