SUMMARY
BV
CEO
= -30V : R
SAT
= 31m ; I
C
= -5.5A
DESCRIPTION
Packaged in the SOT223 outline this new low saturation 30V PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
5.5 Amps continuous current
Up to 20 amps peak current
Very low saturation voltages
Exceptional gain linearity down to 10mA
APPLICATIONS
DC - DC converters
MOSFET gate drivers
Charging circuits
Power switches
Motor control
DEVICE MARKING
ZXTP
2008
ZXTP2008G
ISSUE 1 - JUNE 2005
30V PNP LOW SATURATION TRANSISTOR IN SOT223
1
PINOUT
TOP VIEW
SOT223
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZXTP2008GTA
7"
12mm
embossed
1,000 units
ZXTP2008GTC
13"
4,000 units
ORDERING INFORMATION
ZXTP2008G
ISSUE 1 - JUNE 2005
2
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
-50
V
Collector-emitter voltage
BV
CEO
-30
V
Emitter-base voltage
BV
EBO
-7
V
Continuous collector current
(a)
I
C
-5.5
A
Peak pulse current
I
CM
-20
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
3.0
24
W
mW/C
Power dissipation at T
A
=25C
(b)
Linear derating factor
P
D
1.6
12.8
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to 150
C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R
JA
42
C/W
Junction to ambient
(b)
R
JA
78
C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
ZXTP2008G
ISSUE 1 - JUNE 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BV
CBO
-50
-70
V
I
C
= -100 A
Collector-emitter breakdown voltage
BV
CER
-50
-70
V
I
C
= -1 A, RB < 1k
Collector-emitter breakdown voltage
BV
CEO
-30
-40
V
I
C
= -10mA *
Emitter-base breakdown voltage
BV
EBO
-7.0
-8.0
V
I
E
= -100 A
Collector cut-off current
I
CBO
<1
-20
-0.5
nA
A
V
CB
= -40V
V
CB
= -40V, T
amb
= 100C
Collector cut-off current
I
CER
R < 1k
<1
-20
-0.5
nA
A
V
CB
= -40V
V
CB
= -40V, T
amb
= 100C
Emitter cut-off current
I
EBO
<1
-10
nA
V
EB
= -6V
Collector-emitter saturation voltage
V
CE(SAT)
-30
-40
-60
-70
-170
-45
-60
-85
-90
-210
mV
mV
mV
mV
mV
I
C
= -0.5A, I
B
= -20mA *
I
C
= -1A, I
B
= -100mA *
I
C
= -1A, I
B
= -20mA *
I
C
= -2A, I
B
= -200mA *
I
C
= -5.5A, I
B
= -500mA *
Base-emitter saturation voltage
V
BE(SAT)
-1030
-1130
mV
I
C
= -5.5A, I
B
= -500mA *
Base-emitter turn-on voltage
V
BE(ON)
-900
-1000
mV
I
C
= -5.5A, V
CE
= -1V *
Static forward current transfer ratio
h
FE
100
100
70
10
225
200
145
20
300
I
C
= -10mA, V
CE
= -1V *
I
C
= -1A, V
CE
= -1V *
I
C
= -5A, V
CE
= -1V *
I
C
= -20A, V
CE
= -1V *
Transition frequency
f
T
110
I
C
= -100mA, V
CE
= -10V
f = 50MHz
Output capacitance
C
OBO
83
pF
V
CB
= -10V, f = 1MHz *
Switching times
t
ON
t
OFF
43
230
ns
I
C
= -1A, V
CC
= -10V,
I
B1
= I
B2
= -100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
NOTES
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
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