SUMMARY
BV
CEO
= -30V : R
SAT
= 24m ; I
C
= -5.5A
DESCRIPTION
Packaged in the SOT89 outline this new low saturation
30V PNP transistor offers low on state losses making it
ideal for use in DC-DC circuits, line switching and
various driving and power management functions.
FEATURES
5.5 amps continuous current
Up to 20 amps peak current
Very low saturation voltages
Exceptional gain linearity down to 10mA
Excellent high current gain hold up
APPLICATIONS
DC - DC converters
MOSFET gate drivers
Charging circuits
Power switches
Motor control
DEVICE MARKING
949
ZXTP2008Z
ISSUE 1 - JUNE 2005
30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
1
SOT89
PINOUT
TOP VIEW
DEVICE
REEL
SIZE
TAPE WIDTH
QUANTITY PER
REEL
ZXTP2008ZTA
7"
12mm
embossed
1000 units
ORDERING INFORMATION
ZXTP2008Z
ISSUE 1 - JUNE 2005
2
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
-50
V
Collector-emitter voltage
BV
CEO
-30
V
Emitter-base voltage
BV
EBO
-7
V
Continuous collector current
(a)
I
C
-5.5
A
Peak pulse current
I
CM
-20
A
Power dissipation at T
A
=25C
(a)
Linear derating factor
P
D
1.5
12
W
mW/C
Power dissipation at T
A
=25C
(b)
Linear derating factor
P
D
2.1
16.8
W
mW/C
Operating and storage temperature range
T
j
, T
stg
-55 to 150
C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a)
R
JA
83
C/W
Junction to Ambient
(b)
R
JA
60
C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
ZXTP2008Z
ISSUE 1 - JUNE 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Collector-base breakdown voltage
BV
CBO
-50
-70
V
I
C
= -100 A
Collector-emitter breakdown voltage BV
CER
-50
-70
V
I
C
= -1 A, RB <1k
Collector-emitter breakdown voltage BV
CEO
-30
-40
V
I
C
= -10mA *
Emitter-base breakdown voltage
BV
EBO
-7.0
-8.0
V
I
E
= -100 A
Collector cut-off current
I
CBO
<-1
-20
-0.5
nA
A
V
CB
= -40V
V
CB
= -40V,T
amb
=100C
Collector cut-off current
I
CER
R <1k
<-1
-20
-0.5
nA
A
V
CB
= -40V
V
CB
= -40V,T
amb
=100C
Emitter cut-off current
I
EBO
<-1
-10
nA
V
EB
= -6V
Collector-emitter saturation voltage
V
CE(SAT)
-25
-35
-55
-55
-130
-40
-55
-80
-80
-175
mV
mV
mV
mV
mV
I
C
= -0.5A, I
B
= -20mA *
I
C
= -1A, I
B
= -100mA *
I
C
= -1A, I
B
= -20mA *
I
C
= -2A, I
B
= -200mA *
I
C
= -5.5A, I
B
=-500mA *
Base-emitter saturation voltage
V
BE(SAT)
-970
-1070
mV
I
C
= -5.5A, I
B
= -500mA *
Base-emitter turn-on voltage
V
BE(ON)
-860
-960
mV
I
C
= -5.5A, V
CE
= -1V *
Static forward current transfer ratio
h
FE
100
100
70
10
225
200
145
20
300
I
C
= -10mA, V
CE
= -1V *
I
C
= -1A, V
CE
= -1V *
I
C
= -5A, V
CE
= -1V *
I
C
= -20A, V
CE
= -1V *
Transition frequency
f
T
110
MHz
I
C
= -100mA, V
CE
= -10V
f = 50MHz
Output capacitance
C
OBO
83
pF
V
CB
= -10V, f = 1MHz *
Switching times
t
ON
t
OFF
43
230
ns
I
C
= -1A, V
CC
= -10V,
I
B1
= -I
B2
= -100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
NOTES
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
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