Issue 2 - September 2005
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Zetex Semiconductors plc 2005
ZXTP2029F
100V, SOT23, PNP medium power transistor
Summary
V
(BR)CEV
> -130V, V
(BR)CEO
> -100V
I
C(cont)
= -3A
R
CE(sat)
= 45m typical
V
CE(sat)
< -80mV @ -1A
P
D
= 1.2W
Complementary part number: ZXTN2020F
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally suited
to applications where space is at a premium.
Features
Higher power dissipation SOT23 package
High peak current
Low saturation voltage
130V forward blocking voltage
Applications
MOSFET and IGBT gate driving
Motor drive
DC-DC converters
High side switches
Ordering information
Device marking
953
Device
Reel size
(inches)
Tape width
Quantity per reel
ZXTP2029FTA
7
8mm
3,000
Pinout - top view
ZXTP2029F
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Zetex Semiconductors plc 2005
Absolute maximum ratings
Thermal resistance
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
CBO
-130
V
Collector-emitter voltage
V
(BR)CEV
-130
V
Collector-emitter voltage
V
CEO
-100
V
Emitter-base voltage
V
EBO
-7.0
V
Peak pulse current
I
CM
-5
A
Continuous collector current
(a)
I
C
-3
A
Base current
I
B
-1
A
Power dissipation @ T
A
=25
o
C
(a)
Linear derating factor
P
D
1.0
8.0
W
mW/
o
C
Power dissipation @ T
A
=25
o
C
(b)
Linear derating factor
P
D
1.2
9.6
W
mW/
o
C
Power dissipation @ T
A
=25
o
C
(c)
Linear derating factor
P
D
1.56
12.5
W
mW/
o
C
Operating and storage temperature
T
j
:T
stg
-55 to +150
o
C
Parameter
Symbol
Value
Unit
Junction to ambient
(a)
NOTES:
(a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
R
JA
125
o
C/W
Junction to ambient
(b)
(b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
R
JA
104
o
C/W
Junction to ambient
(c)
(c) As (b) above measured at t<5secs.
R
JA
80
o
C/W
ZXTP2029F
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Zetex Semiconductors plc 2005
Electrical characteristics (at T
amb
= 25C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
V
(BR)CBO
-130
-160
V
I
C
=-100
A
Collector-emitter breakdown
voltage
V
(BR)CEV
-130
-160
V
I
C
=
-1A, 1V> V
BE
>-0.3V
Collector-emitter breakdown
voltage
V
(BR)CEO
-100
-120
V
I
C
=-10mA
(a)
NOTES:
(a) Measured under pulsed conditions. Pulse width=300 S. Duty cycle 2%.
Emitter-base breakdown
voltage
V
(BR)EBO
-7.0
-8.3
V
I
E
=-100
A
Collector-emitter cut-off
current
I
CEV
-20
nA
V
CE
=-100V,
V
BE
= 1V
Collector-base cut-off current I
CBO
-20
nA
V
CB
=-100V
Emitter-base cut-off current
I
EBO
-10
nA
V
EB
=-6V
Static forward current
transfer ratio
H
FE
100
100
40
220
200
75
300
I
C
=-10mA, V
CE
=-2V
(a)
I
C
=-1A, V
CE
=-2V
(a)
Ic=-3A, V
CE
=-2V
Collector-emitter saturation
voltage
V
CE(sat)
-20
-60
-135
-180
-30
-80
-180
-250
mV
mV
mV
mV
I
C
=-100mA, I
B
=-10mA
(a)
I
C
=-1A, I
B
=-100mA
(a)
I
C
=-3A, I
B
=-300mA
(a)
I
C
=-4A, I
B
=-400mA
(a)
Base-emitter saturation
voltage
V
BE(sat)
-0.90
-1.00
V
I
C
=-3A, I
B
=-300mA
(a)
Base-emitter turn-on voltage
V
BE(on)
-0.81
-0.90
V
I
C
=-3A, V
CE
=-2V
(a)
Transition frequency
f
T
150
MHz
Ic=-100mA, V
CE
=-10V,
f=50MHz
Output capacitance
C
obo
39
pF
V
CB
=-10V, f=1MHz
Turnon time
t
(on)
33
ns
V
CC
=-10V, I
C
=-1A,
Turn-off time
t
(off)
344
ns
I
B1
=I
B2
=-100mA
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