Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
MMBT2222A
1
2
1
2
3
3
SOT-23
Rating
Unit
Characteristic
Collector-Emitter Voltage
Vdc
Collector-Base Voltage
Vdc
Emitter-Base Voltage
Vdc
Collector Current-Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
40
75
6.0
600
mAdc
Characteristic
Total Device Dissipation FR-5 Board
(1)
T
A
=25
o
C
Derate above 25
o
C
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25
o
C
Derate above 25
o
C
Thermal Resistance Junction to Ambient
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
OFF CHARACTERISTICS
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Emitter - Base Breakdowe Voltage
( I
E
=10 uAdc, I
C
=0 )
Collector Cutoff Current
( V
CB
=60 Vdc, I
E
=0 )
( V
CB
=60 Vdc, I
E
=0, T
A
=125
o
C )
Collector-Emitter Breakdowe Voltage
( I
C
=10mAdc, I
B=0
)
Emitter Cutoff Current ( V
EB
=3.0 Vdc, I
C
=0 )
Unit
Vdc
Collector-Emitter Breakdowe Voltage
( I
C
=10uAdc, I
E=0
)
Vdc
Vdc
uAdc
nAdc
Collector Cutoff Current
( V
CE
=60 Vdc, V
EB (off)
=3.0 Vdc )
Symbol
V
(BR)EBO
V
(BR)CEO
I
CBO
I
EBO
I
BL
V
(BR)CBO
I
CEX
Min.
6.0
40
-
-
-
-
75
-
Max.
-
-
0.01
10
100
20
-
10
nAdc
nAdc
Base Cutoff Current ( V
CE
=60 V, V
EB
(off)
=3.0 Vdc )
MMBT2222A=1P
Max.
225
1.8
300
2.4
556
417
-55 to +150
Unit
mW
mW /
o
C
mW
mW /
o
C
o
C / W
o
C / W
o
C
Symbol
P
D
P
D
R
JA
R
JA
T
J,
T
STG
Zowie Technology Corporation
REV. : 0
EMITTER
BASE
COLLECTOR
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
Zowie Technology Corporation
Characteristic
Symbol
Min.
Max.
Unit
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted) (Continued)
H
FE
35
50
75
35
100
50
40
-
-
-
-
300
-
-
-
ON CHARACTERISTICS
(3)
V
CE
(sat)
Vdc
DC Current Gain
( I
C
=0.1 mAdc, V
CE=
10 Vdc )
( I
C
=1.0 mAdc, V
CE=
10 Vdc )
( I
C
=10 mAdc, V
CE=
10 Vdc )
( I
C
=10 mAdc, V
CE=
10 Vdc, T
A
=-55
o
C )
( I
C
=150 mAdc, V
CE=
10 Vdc )
(3)
( I
C
=150 mAdc, V
CE=
1.0 Vdc )
(3)
( I
C
=500 mAdc, V
CE=
10 Vdc )
(3)
Collector-Emitter Saturation Voltage
(3)
( I
C
=150 mAdc, I
B
=15 mAdc )
( I
C
=500 mAdc, I
B
=50 mAdc )
-
-
0.3
1.0
V
BE
(sat)
Vdc
Base-Emitter Saturation Voltage
(3)
( I
C
=150 mAdc, I
B
=15 mAdc )
( I
C
=500 mAdc, I
B
=50 mAdc )
0.6
-
1.2
2.0
f
T
C
obo
300
-
-
8.0
MH
Z
SMALL-SIGNAL CHARACTERISTIC
C
ibo
pF
pF
Current-Gain-Bandwidth Product
(4)
( I
C
=20 mAdc, V
CE
=20 Vdc, f=100 MH
Z
)
Output Capacitance
( V
CB
=10 Vdc, I
E
=0, f=1.0 MH
Z
)
Input Capacitance
( V
EB
=0.5 Vdc, I
C
=0, f=1.0 MH
Z
)
Input Impedance
( V
CE
=10 Vdc, I
C
=1.0 mAdc, f=1.0 kH
Z
)
( V
CE
=10 Vdc, I
C
=10 mAdc, f=1.0 kH
Z
)
-
25
h
ie
k ohms
2.0
0.25
8.0
1.25
Voltage Feedback Ratio
( V
CE
=10 Vdc, I
C
=1.0 mAdc, f=1.0 kH
Z
)
( V
CE
=10 Vdc, I
C
=10 mAdc, f=1.0 kH
Z
)
h
re
X 10
-4
-
-
8.0
4.0
Small-Signal Current Gain
( V
CE
=10 Vdc, I
C
=1.0 mAdc, f=1.0 kH
Z
)
( V
CE
=10 Vdc, I
C
=10 mAdc, f=1.0 kH
Z
)
h
fe
-
50
75
300
375
Output Admittance
( V
CE
=10 Vdc, I
C
=1.0 mAdc, f=1.0 kH
Z
)
( V
CE
=10 Vdc, I
C
=10 mAdc, f=1.0 kH
Z
)
h
oe
u mhos
5.0
25
35
200
Collector Base Time Constant
( V
CB
=10 Vdc, I
C
=100 uAdc, R
S
= 1.0 k ohms, f=1.0 kH
Z
)
Delay Time
Rise Time
Storage Time
Fall Time
( V
CC
=30 Vdc, V
BE (off)
= -0.5 Vdc,
I
C
=150 mAdc, I
B1
= 15 mAdc )
( V
CC
=30 Vdc, I
C
= 150 mAdc,
I
B1
=I
B2
= 15 mAdc )
rb, Cc
ps
-
150
Noise Figure
( V
CE
=10 Vdc, I
C
=100 uAdc, R
S
=1.0 k ohm, f=1.0 kH
Z
)
N
F
dB
-
4.0
td
tf
-
-
10
60
tr
-
25
nS
ts
-
225
SWITCHING CHARACTERISTICS
nS
Zowie Technology Corporation
REV. : 0
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
(2) fT is defined as the frequency at which hfe extrapolates to unity.
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation
MMBT2222A
Figure 4. Collector Saturation Region
I
B
, BASE CURRENT ( mA )
V
C
E
,
C
O
L
L
E
C
T
O
R
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT ( mA )
h
F
E
,
D
C
C
U
R
R
E
N
T
G
A
I
N
Figure 1. Turn-On Time
Figure 2. Turn-Off Time
1.0 k
1N914
+30 V
200
1.0 k
C
S
*
< 10 pF*
< 2.0 ns
< 20 ns
-4.0V
-2.0 V
-14 V
1.0 to 100 us,
DUTY CYCLE = 2%
1.0 to 100 us,
DUTY CYCLE = 2%
+16 V
+16 V
0
0
Scope rise time < 4.0 ns
* Total shunt capacitance of test jig and connectors
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
200
C
S
*
< 10 pF*
1000
10
20
30
50
70
100
200
300
500
700
1.0 k
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50 70 100
200 300
500 700
1.0
0.8
0.6
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation
MMBT2222A
Figure 5. Turn - On Time
I
C
, COLLECTOR CURRENT ( mA )
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
I
C
, COLLECTOR CURRENT ( mA )
t
,
T
I
M
E
(
n
S
)
t
,
T
I
M
E
(
n
S
)
f, FREQUENCY ( kH
Z
)
N
F
,
N
O
I
S
E
F
I
G
U
R
E
(
d
B
)
R
S
, SOURCE RESISTANCE (OHMS)
Figure 9. Capacitances
REVERSE VOLTAGE ( VOLTS )
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
Figure 10. Current-Gain Bandwidth Product
I
C
, COLLECTOR CURRENT ( mA )
t
T
,
C
U
R
R
E
N
T
-
G
A
I
N
-
B
A
N
D
W
I
D
T
H
P
R
O
D
U
C
T
(
M
H
Z
)
Figure 6. Turn - Off Time
N
F
,
N
O
I
S
E
F
I
G
U
R
E
(
d
B
)
70
100
200
50
10
20
70
5.0
100
5.0 7.0
30
50
200
10
30
7.0
20
3.0
2.0
300
500
T
J
= 25
o
C
I
C/B
= 10
t
r
@ V
CC
=30V
t
d
@ V
EB(off)
=2.0V
t
d
@ V
EB(off)
=0
500
5.0
7.0
10
20
30
50
70
100
200
300
10
20
70 100
5.0 7.0
30
50
200 300
500
V
CC
=30 V
I
C
/I
B
=10
I
B1
=I
B1
T
J
= 25
o
C
4.0
6.0
8.0
10
2.0
0.1
1.0 2.0
5.0 10 20
50
0.2
0.5
0
100
0.01 0.02 0.05
I
C
=1.0mA, R
S
=150
500uA, R
S
=200
100uA, R
S
=2.0k
50uA, R
S
=4.0k
I
C
=50uA
f=1.0kHz
R
S
=OPTIMUM
SOURCE
RESISTANCE
4.0
6.0
8.0
10
2.0
0
50 100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
500uA
100uA
1.0mA
3.0
5.0
7.0
10
2.0
0.1
1.0
2.0 3.0 5.0 7.0 10
20 30
50
0.2 0.3 0.5 0.7
20
30
C
eb
C
cb
70
100
200
300
50
500
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
T
A
= 25
o
C
V
CE
= 10 V
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REV. : 0
Zowie Technology Corporation
MMBT2222A
Figure 11. " On " Voltage
I
C
, COLLECTOR CURRENT ( mA )
I
C
, COLLECTOR CURRENT ( mA )
V
,
V
O
L
T
A
G
E
(
V
O
L
T
S
)
C
O
E
F
F
I
C
I
E
N
T
(
m
V
/
o
C
)
Figure 12. Temperature Coefficients
0.4
0.6
0.8
1.0
0.2
0
0.1
1.0 2.0
5.0 10 20
50
0.2
0.5
100 200 500 1.0 k
T
J
= 25
o
C
1.0 V
V
BE(sat)
@ I
C/
I
B
=10
V
CE(sat)
@ I
C/
I
B
=10
V
BE(on)
@ V
CE
=10V
-0.5
0
+0.5
-1.0
-1.5
-2.5
-2.0
0.1
1.0 2.0
5.0 10 20
50
0.2
0.5
100 200 500
R
VC
for V
CE
(sat)
R
VB
for V
BE
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