Zowie Technology Corporation
High Voltage Transistor
NPN Silicon
MMBT5551
1
2
1
2
3
3
SOT-23
Rating
Symbol
Value
Unit
Characteristic
Symbol
Min.
Max.
Unit
Collector-Emitter Voltage
V
CEO
140
Vdc
Collector-Base Voltage
V
CBO
160
Vdc
Emitter-Base Voltage
V
EBO
6.0
Vdc
Collector Current-Continuous
I
C
600
mAdc
Characteristic
Symbol
Max.
Unit
Total Device Dissipation FR-5 Board
(1)
T
A
=25
o
C
Derate above 25
o
C
P
D
225
1.8
mW
mW /
o
C
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25
o
C
Derate above 25
o
C
P
D
V
(BR)CBO
300
2.4
180
-
mW
mW /
o
C
Thermal Resistance Junction to Ambient
556
o
C / W
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
V
(BR)CEO
160
-
Vdc
Vdc
OFF CHARACTERISTICS
R
JA
Thermal Resistance Junction to Ambient
417
o
C / W
R
JA
Junction and Storage Temperature
Collector-Base Breakdowe Voltage
( I
C
=100 uAdc, I
E
=0 )
V
(BR)EBO
6.0
-
Vdc
Emitter-Base Breakdowe Voltage
( I
E
=10 uAdc, I
C
=0 )
Collector-Emitter Breakdowe Voltage
(3)
( I
C
=1.0mAdc, I
B
=0 )
I
CBO
-
-
50
50
nAdc
uAdc
Base Cutoff Current
( V
CE
=120 Vdc, I
E
=0 )
( V
CE
=120 Vdc, I
E
=0, T
A = 100
o
C
)
I
EBO
-
50
nAdc
Collector Cutoff Current
( V
EB
=4.0 Vdc, I
C
=0 )
MMBT5551=G1
-55 to +150
o
C
T
J,
T
STG
Zowie Technology Corporation
REV. : 0
EMITTER
BASE
COLLECTOR
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width = 300 uS, Duty Cycle = 2.0%.
Zowie Technology Corporation
Characteristic
Symbol
Min.
Max.
Unit
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted) (Continued)
H
FE
80
80
30
-
250
-
-
ON CHARACTERISTICS
V
CE
(sat)
Vdc
DC Current Gain
( I
C
= 1.0 mAdc, V
CE
=
5.0 Vdc )
( I
C
= 10 mAdc, V
CE
= 5.0 Vdc )
( I
C
= 50 mAdc, V
CE
= 5.0 Vdc )
Collector-Emitter Saturation Voltage
( I
C
= 10 mAdc, I
B
= 1.0 mAdc )
( I
C
= 50 mAdc, I
B
= 5.0 mAdc )
-
-
0.15
0.20
V
BE
(sat)
Vdc
Base-Emitter Saturation Voltage
( I
C
= 10 mAdc, I
B
= 1.0 mAdc )
( I
C
= 50 mAdc, I
B
= 5.0 mAdc )
-
-
1.0
1.0
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation
MMBT5551
Figure 2. Collector Saturation Region
I
B
, BASE CURRENT ( mA )
V
C
E
,
C
O
L
L
E
C
T
O
R
E
M
I
T
T
E
R
V
O
L
T
A
G
E
(
V
O
L
T
S
)
I
C
= 1.0 mA
10 mA
30 mA
100 mA
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT ( mA )
h
F
E
,
D
C
C
U
R
R
E
N
T
G
A
I
N
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= +125
o
C
V
CE
=1.0 V
500
5.0
10
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
30
20
300
100
50
7.0
1.0
0
0.3
0.005
0.01
0.2
0.5
1.0
2.0
20
50
0.8
0.5
0.4
0.9
0.7
0.6
0.2
0.02
0.05
0.1
10
0.1
5.0
Figure 3. Collector Cut - Off Region
I
C
,
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
(
u
A
)
V
BE
, BASE - EMITTER VOLTAGE (VOLTS)
Figure 4. " On " Voltages
I
C
, COLLECTOR CURRENT ( mA )
V
,
V
O
L
T
A
G
E
(
V
O
L
T
S
)
0.6
1.0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0.8
0.4
0.2
0
0.3
3.0
30
T
J
= 25
o
C
V
BE(SAT)
@
I
C
/I
B
= 10
V
CE(SAT)
@
I
C
/I
B
= 10
V
CE
=5.0 V
T
J
= 125
o
C
T
J
= 75
o
C
T
J
= 25
o
C
REVERSE
FORWARD
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0.2
0.4
0.3
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
V
CE
= 30 V
I
C
= I
CES
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation
MMBT5551
Figure 5. Temperature Coefficients
I
C
, COLLECTOR CURRENT ( mA )
Figure 8. Turn-On Time
C
,
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
t
,
T
I
M
E
(
n
S
)
V
R
, REVERSE VOLTAGE ( VOLTS )
Figure 7. Capacitances
V
R
, REVERSE VOLTAGE ( VOLTS )
Figure 9. Turn - Off Time
I
C
, COLLECTOR CURRENT ( mA )
t
,
T
I
M
E
(
n
S
)
T
J
= 25
o
C
T
J
= 25
o
C
C
ibo
C
obo
2.5
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
1.0
2.0
5.0
10
20
50 100
0.1
0.2
0.5
3.0
30
0.3
T
J
= -55
o
C to +135
o
C
VC
for V
CE
(sat)
VB
for V
BE
(sat)
Figure 6. Switching Time Test Circuit
VALUES SHOWN ARE FOR IC @ 10 mA
10.2V
Vin
Vin
10 uS
INPUT PULSE
VBB
- 8.8V
100
RB
5.1 k
0.25 uF
100
1N914
Vout
RC
VCC
30 V
3.0 k
tr, tf 10 nS
DUTY CYCLE = 1.0%
100
1.0
0.2
0.5
1.0
2.0
5.0
10
20
70
50
30
20
10
7.0
5.0
3.0
2.0
0.3
0.7
3.0
7.0
V
,
T
E
M
P
E
R
A
T
U
R
E
C
O
E
F
F
I
C
I
E
N
T
S
(
m
V
/
o
C
)
1000
0.3
1.0
10
20 30 50
0.5
0.2
10
20
30
50
100
200
300
500
2.0
100 200
3.0 5.0
I
C
/I
B
= 10
T
J
= 25
o
C
I
C
/I
B
= 10
t
r
@ V
CC
= 30 V
t
r
@ V
CC
= 120 V
V
CC
= 120 V
t
d
@ V
EB(off)
= 1.0 V
t
f
@ V
CC
= 120 V
t
f
@ V
CC
= 30 V
t
s
@ V
CC
= 120 V
5000
50
100
200
300
500
3000
2000
1000
0.3
1.0
10
20 30 50
0.5
0.2
2.0
100 200
3.0 5.0
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