Zowie Technology Corporation
High Voltage Transistor
PNP Silicon
MMBTA92
1
2
1
2
3
3
SOT-23
Rating
Unit
Characteristic
Collector-Emitter Voltage
Vdc
Collector-Base Voltage
Vdc
Emitter-Base Voltage
Vdc
Collector Current-Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
-300
-300
-5.0
-500
mAdc
Characteristic
Total Device Dissipation FR-5 Board
(1)
T
A
=25
o
C
Derate above 25
o
C
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25
o
C
Derate above 25
o
C
Thermal Resistance Junction to Ambient
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
OFF CHARACTERISTICS
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Emitter - Base Breakdowe Voltage
( I
E
= -100 uAdc, I
C
=0 )
Emitter Cutoff Curretn
( V
EB
= -3.0 Vdc, I
C
=0 )
Collector-Emitter Breakdowe Voltage
(3)
( I
C
= -1.0mAdc, I
B=0
)
Unit
Vdc
Collector-Base Breakdowe Voltage
( I
C
= -100uAdc, I
E=0
)
Vdc
Vdc
uAdc
Collector Cutoff Current
( V
CE
= -200 Vdc, I
E
= 0 )
Symbol
V
(BR)EBO
V
(BR)CEO
I
EBO
V
(BR)CBO
I
CBO
Min.
-5.0
-300
-
-300
-
Max.
-
-
-0.1
-
-0.25
uAdc
MMBTA92=2D
Max.
225
1.8
300
2.4
556
417
-55 to +150
Unit
mW
mW /
o
C
mW
mW /
o
C
o
C / W
o
C / W
o
C
Symbol
P
D
P
D
R
JA
R
JA
T
J,
T
STG
Zowie Technology Corporation
REV. : 0
EMITTER
BASE
COLLECTOR
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
Zowie Technology Corporation
Characteristic
Symbol
Min.
Max.
Unit
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted) (Continued)
H
FE
25
40
25
-
-
-
-
ON CHARACTERISTICS
(3)
V
CE
(sat)
Vdc
DC Current Gain
( I
C
= -1.0 mAdc, V
CE
=
-
10 Vdc )
( I
C
= -10 mAdc, V
CE
= -10 Vdc )
( I
C
= -30 mAdc, V
CE
= -10 Vdc )
Collector-Emitter Saturation Voltage
( I
C
= -20 mAdc, I
B
= -2.0 mAdc )
-
-0.5
V
BE
(sat)
Vdc
Base-Emitter Saturation Voltage
( I
C
= -20 mAdc, I
B
= -2.0 mAdc )
-
-0.9
f
T
C
cb
50
-
-
6.0
MH
Z
SMALL-SIGNAL CHARACTERISTIC
pF
Current-Gain-Bandwidth Product
( I
C
= -10 mAdc, V
CE
= -20 Vdc, f=100 MH
Z
)
Collector-Base Capacitance
( V
CB
= -20 Vdc, I
E
=0, f=1.0 MH
Z
)
Zowie Technology Corporation
REV. : 0
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation
MMBTA92
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT ( mA )
h
F
E
,
D
C
C
U
R
R
E
T
N
G
A
I
N
Figure 2. Capacitance
V
R
, REVERSE VOLTAGE ( VOLTS )
Figure 4. "On" Voltages
I
C
, COLLECTOR CURRENT ( mA )
C
,
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
t
T
,
C
U
R
R
E
N
T
-
G
A
I
N
-
B
A
N
D
W
I
D
T
H
(
M
H
z
)
I
C
, COLLECTOR CURRENT ( mA )
V
,
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Figure 3. Current-Gain-Bandwidth
T
J
= +125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
V
CE
= 10 Vdc
V
CE
=20 V
f=20MHz
T
J
= 25
o
C
C
Ib
@ 1MHz
C
cb
@ 1MHz
21
19
17
15
13
11
9
7
5
3
150
130
90
50
30
10
1
110
70
1.4
0.0
1.2
1.0
0.8
0.6
0.4
0.2
100
10
0.1
1.0
V
CE(sat)
@ 25
o
C, I
C
/I
B
= 10
V
CE(sat)
@ 125
o
C, I
C
/I
B
= 10
V
CE(sat)
@ -55
o
C, I
C
/I
B
= 10
V
BE(sat)
@ 25
o
C, I
C
/I
B
= 10
V
BE(sat)
@ 125
o
C, I
C
/I
B
= 10
V
BE(sat)
@ -55
o
C, I
C
/I
B
= 10
V
BE(on)
@ 25
o
C, V
CE
= 10 V
V
BE(on)
@ 125
o
C, V
CE
= 10 V
V
BE(on)
@ -55
o
C, V
CE
= 10 V
300
0.1
1.0
10
250
200
150
0
100
50
100
0.1
100
0.1
10
1.0
10
1000
100
1.0
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