IXFB72N55Q2 - High Current MOSFETs with Double Metal Gate Construction * Vdss up to 1000V * Avalanche energy and current rated * Double metal gate construction for exceptionally fast switching * Low Rds(on) with low gate charge & juntion capacitances
IXFK30N100Q2 - High Current MOSFETs with Double Metal Gate Construction * Vdss up to 1000V * Avalanche energy and current rated * Double metal gate construction for exceptionally fast switching * Low Rds(on) with low gate charge & juntion capacitances
IXFK32N50Q - HiperFET (tm) Power MOSFETs Q-class: 500v, 32a
IXFK52N30Q - N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
IXFK52N60Q2 - High Current MOSFETs with Double Metal Gate Construction * Vdss up to 1000V * Avalanche energy and current rated * Double metal gate construction for exceptionally fast switching * Low Rds(on) with low gate charge & juntion capacitances
IXFK62N25 - Hiperfet Power Mosfets Single Mosfet Die
IXFK64N50P - Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic diode# ID(25): 1A - 200A
IXFK64N60P - Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic diode# ID(25): 1A - 200A
IXFK66N50Q2 - High Current MOSFETs with Double Metal Gate Construction * Vdss up to 1000V * Avalanche energy and current rated * Double metal gate construction for exceptionally fast switching * Low Rds(on) with low gate charge & juntion capacitances
IXFK69N30P - Polar MOSFETs with Fast Intrinsic Diode# BVDSS up to 600V# Avalanche rated# Fast trr intrinsic diode# ID(25): 1A - 200A
IXFL38N100Q2 - High Current MOSFETs with Double Metal Gate Construction * Vdss up to 1000V * Avalanche energy and current rated * Double metal gate construction for exceptionally fast switching * Low Rds(on) with low gate charge & juntion capacitances