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Components list, symbol «K», page 3

  1. K7 Неопределенные - KS Series KEY SWITCHES
  2. K7252M Неопределенные - If Filter Intercarrier/multistandard Applications
  3. K7257M EPCOS - SAW Components
  4. K6R1008C1B-12 Samsung - K6R1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 160 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  5. K6R1008C1B-8 Samsung - K6R1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 160 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  6. K6R1008C1B-C Samsung - K6R1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 160 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  7. K6R1008C1B-C10 Samsung - 128kx8 Bit High Speed Static Ram5v Operating, Revolutionary Pin Out. Operated At Commercial and Industrial Temperature Ranges.
  8. K6R1008C1B-C12 Samsung - 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  9. K6R1008C1B-C8 Samsung - 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  10. K6R1008C1B-I Samsung - K6R1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 160 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  11. K6R1008C1B-I10 Samsung - 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  12. K6R1008C1B-I12 Samsung - 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  13. K6R1008C1B-I8 Samsung - 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
  14. K6R1008C1B-J Samsung - K6R1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 160 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  15. K6R1008C1B-T Samsung - K6R1008C1B 128K X 8 Bit High-speed CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C ; Operating Current(mA) = 160 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  16. K6R1008C1C- Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
  17. K6R1008C1C-10 Samsung - K6R1008C1C 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 80,75,73 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = Converted Into K6R1008C1D
  18. K6R1008C1C-12 Samsung - K6R1008C1C 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 80,75,73 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = Converted Into K6R1008C1D
  19. K6R1008C1C-15 Samsung - K6R1008C1C 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 80,75,73 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = Converted Into K6R1008C1D
  20. K6R1008C1C-C10 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
  21. K6R1008C1C-C12 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
  22. K6R1008C1C-C15 Samsung - 128kx8 Bit High-speed Cmos Static Ram(5v Operating). Operated At Commercial and Industrial Temperature Ranges.
  23. K6R1008C1C-C/C-L Samsung - K6R1008C1C 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 80,75,73 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = Converted Into K6R1008C1D
  24. K6R1008C1C-I10 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
  25. K6R1008C1C-I12 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
  26. K6R1008C1C-I15 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
  27. K6R1008C1C-I/C-P Samsung - K6R1008C1C 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 80,75,73 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = Converted Into K6R1008C1D
  28. K6R1008C1C-J Samsung - K6R1008C1C 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 80,75,73 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = Converted Into K6R1008C1D
  29. K6R1008C1C-J10 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
  30. K6R1008C1C-J12 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
  31. K6R1008C1C-J15 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
  32. K6R1008C1C-L10 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
  33. K6R1008C1C-L12 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
  34. K6R1008C1C-L15 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
  35. K6R1008C1C-P10 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
  36. K6R1008C1C-P12 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
  37. K6R1008C1C-P15 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
  38. K6R1008C1C-T Samsung - K6R1008C1C 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 80,75,73 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = Converted Into K6R1008C1D
  39. K6R1008C1C-T10 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
  40. K6R1008C1C-T12 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
  41. K6R1008C1C-T15 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
  42. K6R1008C1D Samsung - 64kx16 Bit High-speed Cmos Static Ram(3.3v Operating) Operated At Commercial and Industrial Temperature Ranges.
  43. K6R1008C1D-10 Samsung - K6R1008C1D 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(mA) = 20,5 ; Package = 32SOJ,32TSOP2 ; Production Status = Mass Production ; Comments = -
  44. K6R1008C1D-12 Samsung - K6R1008C1D 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(mA) = 20,5 ; Package = 32SOJ,32TSOP2 ; Production Status = Mass Production ; Comments = -
  45. K6R1008C1D-J Samsung - K6R1008C1D 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(mA) = 20,5 ; Package = 32SOJ,32TSOP2 ; Production Status = Mass Production ; Comments = -
  46. K6R1008C1D-JC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  47. K6R1008C1D-JC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  48. K6R1008C1D-JI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  49. K6R1008C1D-JI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  50. K6R1008C1D-JTCI10/12 Samsung - 64kx16 Bit High-speed CMOS Static RAM (3.3v Operating) Operated at Commercial and Industrial Temperature Ranges.
  51. K6R1008C1D-KC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  52. K6R1008C1D-KC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  53. K6R1008C1D-KI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  54. K6R1008C1D-KI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  55. K6R1008C1D-T Samsung - K6R1008C1D 128K X 8 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 128Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(mA) = 20,5 ; Package = 32SOJ,32TSOP2 ; Production Status = Mass Production ; Comments = -
  56. K6R1008C1D-TC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  57. K6R1008C1D-TC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  58. K6R1008C1D-TI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  59. K6R1008C1D-TI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  60. K6R1008C1D-UC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  61. K6R1008C1D-UC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  62. K6R1008C1D-UI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  63. K6R1008C1D-UI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  64. K6R1008V1A Samsung - K6R1008V1A 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 140 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  65. K6R1008V1A-12 Samsung - K6R1008V1A 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 140 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  66. K6R1008V1A-15 Samsung - K6R1008V1A 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 140 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  67. K6R1008V1A-20 Samsung - K6R1008V1A 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 140 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  68. K6R1008V1A-C Samsung - K6R1008V1A 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 140 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  69. K6R1008V1A-C12 Samsung - K6R1008V1A 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 140 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  70. K6R1008V1A-C15 Samsung - K6R1008V1A 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 140 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  71. K6R1008V1A-C20 Samsung - K6R1008V1A 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 140 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  72. K6R1008V1A-I Samsung - K6R1008V1A 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 140 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  73. K6R1008V1A-I12 Samsung - K6R1008V1A 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 140 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  74. K6R1008V1A-I15 Samsung - K6R1008V1A 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 140 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  75. K6R1008V1A-I20 Samsung - K6R1008V1A 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 140 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  76. K6R1008V1A-J Samsung - K6R1008V1A 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 140 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  77. K6R1008V1A-T Samsung - K6R1008V1A 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 140 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  78. K6R1008V1B Samsung - 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
  79. K6R1008V1B-10 Samsung - K6R1008V1B 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 160 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = -
  80. K6R1008V1B-12 Samsung - K6R1008V1B 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 160 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = -
  81. K6R1008V1B-8 Samsung - K6R1008V1B 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 160 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = -
  82. K6R1008V1B-B-L Samsung - 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
  83. K6R1008V1B-B-P Samsung - 128kx8 Bit High Speed Static Ram(3.3v Operating), Revolutionary Pin Out. Operated At Commercial and Industrial Temperature Ranges
  84. K6R1008V1B-C10 Samsung - 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
  85. K6R1008V1B-C12 Samsung - 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
  86. K6R1008V1B-C8 Samsung - 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
  87. K6R1008V1B-C/B-L Samsung - K6R1008V1B 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 160 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = -
  88. K6R1008V1B-C-L Samsung - 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
  89. K6R1008V1B-I10 Samsung - 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
  90. K6R1008V1B-I12 Samsung - 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
  91. K6R1008V1B-I8 Samsung - 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
  92. K6R1008V1B-I/B-P Samsung - K6R1008V1B 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 160 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = -
  93. K6R1008V1B-I-P Samsung - 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
  94. K6R1008V1B-J Samsung - K6R1008V1B 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 160 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = -
  95. K6R1008V1B-T Samsung - K6R1008V1B 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 160 ; Standby Current(mA) = 5 ; Package = 32SOJ, 32TSOP2 ; Production Status = Eol ; Comments = -
  96. K6R1008V1C Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
  97. K6R1008V1C-10 Samsung - K6R1008V1C 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 80,75,73 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = Converted Into K6R1008V1D
  98. K6R1008V1C-12 Samsung - K6R1008V1C 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 80,75,73 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = Converted Into K6R1008V1D
  99. K6R1008V1C-15 Samsung - K6R1008V1C 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 80,75,73 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = Converted Into K6R1008V1D
  100. K6R1008V1C-C Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
  101. K6R1008V1C-C10 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
  102. K6R1008V1C-C12 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
  103. K6R1008V1C-C15 Samsung - 128kx8 Bit High-speed Cmos Static Ram(3.3v Operating).
  104. K6R1008V1C-C/C-L Samsung - K6R1008V1C 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 80,75,73 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = Converted Into K6R1008V1D
  105. K6R1008V1C-I Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
  106. K6R1008V1C-I10 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
  107. K6R1008V1C-I12 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
  108. K6R1008V1C-I15 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
  109. K6R1008V1C-I/C-P Samsung - K6R1008V1C 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 80,75,73 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = Converted Into K6R1008V1D
  110. K6R1008V1C-J Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
  111. K6R1008V1C-l Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
  112. K6R1008V1C-p Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
  113. K6R1008V1C-T Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
  114. K6R1008V1C-TI15 Samsung - 128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
  115. K6R1008V1D Samsung - K6R1008V1D 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Mass Production ; Comments = -
  116. K6R1008V1D-08 Samsung - K6R1008V1D 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Mass Production ; Comments = -
  117. K6R1008V1D-10 Samsung - K6R1008V1D 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Mass Production ; Comments = -
  118. K6R1008V1D-J Samsung - K6R1008V1D 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Mass Production ; Comments = -
  119. K6R1008V1D-JC08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  120. K6R1008V1D-JC08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  121. K6R1008V1D-JC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  122. K6R1008V1D-JC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  123. K6R1008V1D-JI08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  124. K6R1008V1D-JI08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  125. K6R1008V1D-JI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  126. K6R1008V1D-JI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  127. K6R1008V1D-JTCI08/10 Samsung - 64kx16 Bit High-speed CMOS Static RAM (3.3v Operating) Operated at Commercial and Industrial Temperature Ranges.
  128. K6R1008V1D-KC08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  129. K6R1008V1D-KC08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  130. K6R1008V1D-KC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  131. K6R1008V1D-KC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  132. K6R1008V1D-KI08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  133. K6R1008V1D-KI08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  134. K6R1008V1D-KI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  135. K6R1008V1D-KI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  136. K6R1008V1D-T Samsung - K6R1008V1D 128K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 32SOJ,32TSOP2 ; Production Status = Mass Production ; Comments = -
  137. K6R1008V1D-TC08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  138. K6R1008V1D-TC08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  139. K6R1008V1D-TC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  140. K6R1008V1D-TC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  141. K6R1008V1D-TI08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  142. K6R1008V1D-TI08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  143. K6R1008V1D-TI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  144. K6R1008V1D-TI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  145. K6R1008V1D-UC08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  146. K6R1008V1D-UC08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  147. K6R1008V1D-UC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  148. K6R1008V1D-UC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  149. K6R1008V1D-UI08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  150. K6R1008V1D-UI08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  151. K6R1008V1D-UI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  152. K6R1008V1D-UI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  153. K6R1016C1 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  154. K6R1016C1A Samsung - K6R1016C1A 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 190 ; Standby Current(mA) = 8 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  155. K6R1016C1A-12 Samsung - K6R1016C1A 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 190 ; Standby Current(mA) = 8 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  156. K6R1016C1A-15 Samsung - K6R1016C1A 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 190 ; Standby Current(mA) = 8 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  157. K6R1016C1A-20 Samsung - K6R1016C1A 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 190 ; Standby Current(mA) = 8 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  158. K6R1016C1A-C Samsung - K6R1016C1A 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 190 ; Standby Current(mA) = 8 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  159. K6R1016C1A-C12 Samsung - K6R1016C1A 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 190 ; Standby Current(mA) = 8 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  160. K6R1016C1A-C15 Samsung - K6R1016C1A 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 190 ; Standby Current(mA) = 8 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  161. K6R1016C1A-C20 Samsung - K6R1016C1A 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 190 ; Standby Current(mA) = 8 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  162. K6R1016C1A-I Samsung - K6R1016C1A 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 190 ; Standby Current(mA) = 8 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  163. K6R1016C1A-I12 Samsung - K6R1016C1A 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 190 ; Standby Current(mA) = 8 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  164. K6R1016C1A-I15 Samsung - K6R1016C1A 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 190 ; Standby Current(mA) = 8 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  165. K6R1016C1A-I20 Samsung - K6R1016C1A 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 190 ; Standby Current(mA) = 8 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  166. K6R1016C1A-J Samsung - K6R1016C1A 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 190 ; Standby Current(mA) = 8 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  167. K6R1016C1A-T Samsung - K6R1016C1A 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 190 ; Standby Current(mA) = 8 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  168. K6R1016C1B Samsung - K6R1016C1B 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200,195,190 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  169. K6R1016C1B-10 Samsung - K6R1016C1B 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200,195,190 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  170. K6R1016C1B-12 Samsung - K6R1016C1B 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200,195,190 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  171. K6R1016C1B-8 Samsung - K6R1016C1B 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200,195,190 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  172. K6R1016C1B-C Samsung - K6R1016C1B 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200,195,190 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  173. K6R1016C1B-C10 Samsung - K6R1016C1B 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200,195,190 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  174. K6R1016C1B-C12 Samsung - K6R1016C1B 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200,195,190 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  175. K6R1016C1B-C8 Samsung - K6R1016C1B 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200,195,190 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  176. K6R1016C1B-I Samsung - K6R1016C1B 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200,195,190 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  177. K6R1016C1B-I10 Samsung - K6R1016C1B 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200,195,190 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  178. K6R1016C1B-I12 Samsung - K6R1016C1B 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200,195,190 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  179. K6R1016C1B-I8 Samsung - K6R1016C1B 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200,195,190 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  180. K6R1016C1B-J Samsung - K6R1016C1B 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200,195,190 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  181. K6R1016C1B-T Samsung - K6R1016C1B 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200,195,190 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  182. K6R1016C1C Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
  183. K6R1016C1C-10 Samsung - K6R1016C1C 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 105,95,93 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48FPBGA ; Production Status = Eol ; Comments = Converted Into K6R1016C1D
  184. K6R1016C1C-12 Samsung - K6R1016C1C 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 105,95,93 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48FPBGA ; Production Status = Eol ; Comments = Converted Into K6R1016C1D
  185. K6R1016C1C-15 Samsung - K6R1016C1C 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 105,95,93 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48FPBGA ; Production Status = Eol ; Comments = Converted Into K6R1016C1D
  186. K6R1016C1C-C10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
  187. K6R1016C1C-C12 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
  188. K6R1016C1C-C15 Samsung - 64kx16 Bit High-speed Cmos Static Ram(5.0v Operating).
  189. K6R1016C1C-C/C-L Samsung - K6R1016C1C 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 105,95,93 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48FPBGA ; Production Status = Eol ; Comments = Converted Into K6R1016C1D
  190. K6R1016C1C-I10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
  191. K6R1016C1C-I12 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
  192. K6R1016C1C-I15 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
  193. K6R1016C1C-I/C-P Samsung - K6R1016C1C 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 105,95,93 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48FPBGA ; Production Status = Eol ; Comments = Converted Into K6R1016C1D
  194. K6R1016C1C-J Samsung - K6R1016C1C 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 105,95,93 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48FPBGA ; Production Status = Eol ; Comments = Converted Into K6R1016C1D
  195. K6R1016C1C-T Samsung - K6R1016C1C 64K X 16 Bit High-speed CMOS Static RAM ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 105,95,93 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48FPBGA ; Production Status = Eol ; Comments = Converted Into K6R1016C1D
  196. K6R1016C1D Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  197. K6R1016C1D-10 Samsung - K6R1016C1D 64K x1 6 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Mass Production ; Comments = -
  198. K6R1016C1D-12 Samsung - K6R1016C1D 64K x1 6 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Mass Production ; Comments = -
  199. K6R1016C1D-EC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  200. K6R1016C1D-EC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  201. K6R1016C1D-EI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  202. K6R1016C1D-EI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  203. K6R1016C1D-J Samsung - K6R1016C1D 64K x1 6 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Mass Production ; Comments = -
  204. K6R1016C1D-JC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  205. K6R1016C1D-JC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  206. K6R1016C1D-JI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  207. K6R1016C1D-JI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  208. K6R1016C1D-KC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  209. K6R1016C1D-KC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  210. K6R1016C1D-KI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  211. K6R1016C1D-KI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  212. K6R1016C1D-T Samsung - K6R1016C1D 64K x1 6 Bit High-speed CMOS Static RAM(5.0V Operating) ; Organization = 64Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Mass Production ; Comments = -
  213. K6R1016C1D-TC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  214. K6R1016C1D-TC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  215. K6R1016C1D-TI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  216. K6R1016C1D-TI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  217. K6R1016C1D-UC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  218. K6R1016C1D-UC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  219. K6R1016C1D-UI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  220. K6R1016C1D-UI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  221. K6R1016V1A Samsung - K6R1016V1A 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  222. K6R1016V1A-12 Samsung - K6R1016V1A 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  223. K6R1016V1A-15 Samsung - K6R1016V1A 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  224. K6R1016V1A-20 Samsung - K6R1016V1A 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  225. K6R1016V1A-C Samsung - K6R1016V1A 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  226. K6R1016V1A-C12 Samsung - K6R1016V1A 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  227. K6R1016V1A-C15 Samsung - K6R1016V1A 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  228. K6R1016V1A-C20 Samsung - K6R1016V1A 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  229. K6R1016V1A-I Samsung - K6R1016V1A 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  230. K6R1016V1A-I12 Samsung - K6R1016V1A 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  231. K6R1016V1A-I15 Samsung - K6R1016V1A 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  232. K6R1016V1A-I20 Samsung - K6R1016V1A 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  233. K6R1016V1A-J Samsung - K6R1016V1A 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  234. K6R1016V1A-T Samsung - K6R1016V1A 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 12,15,20 ; Operating Temperature = C,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  235. K6R1016V1B Samsung - K6R1016V1B 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  236. K6R1016V1B-10 Samsung - K6R1016V1B 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  237. K6R1016V1B-12 Samsung - K6R1016V1B 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  238. K6R1016V1B-8 Samsung - K6R1016V1B 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  239. K6R1016V1B-C10 Samsung - K6R1016V1B 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  240. K6R1016V1B-C12 Samsung - K6R1016V1B 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  241. K6R1016V1B-C8 Samsung - K6R1016V1B 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  242. K6R1016V1B-C/B-L Samsung - K6R1016V1B 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  243. K6R1016V1B-I10 Samsung - K6R1016V1B 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  244. K6R1016V1B-I12 Samsung - K6R1016V1B 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  245. K6R1016V1B-I8 Samsung - K6R1016V1B 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  246. K6R1016V1B-I/B-P Samsung - K6R1016V1B 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  247. K6R1016V1B-J Samsung - K6R1016V1B 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  248. K6R1016V1B-T Samsung - K6R1016V1B 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10,12 ; Operating Temperature = C,i ; Operating Current(mA) = 200 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  249. K6R1016V1C Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  250. K6R1016V1C-10 Samsung - K6R1016V1C 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 105,95,93 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48FPBGA ; Production Status = Eol ; Comments = Converted Into K6R1016V1D
  251. K6R1016V1C-12 Samsung - K6R1016V1C 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 105,95,93 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48FPBGA ; Production Status = Eol ; Comments = Converted Into K6R1016V1D
  252. K6R1016V1C-15 Samsung - K6R1016V1C 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 105,95,93 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48FPBGA ; Production Status = Eol ; Comments = Converted Into K6R1016V1D
  253. K6R1016V1C-C10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  254. K6R1016V1C-C12 Samsung - 64kx16 Bit High-speed Cmos Static Ram(3.3v Operating) Operated At Commercial and Industrial Temperature Ranges.
  255. K6R1016V1C-C15 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  256. K6R1016V1C-C20 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  257. K6R1016V1C-C/C-L Samsung - K6R1016V1C 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 105,95,93 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48FPBGA ; Production Status = Eol ; Comments = Converted Into K6R1016V1D
  258. K6R1016V1C-I10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  259. K6R1016V1C-I12 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  260. K6R1016V1C-I15 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  261. K6R1016V1C-I20 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  262. K6R1016V1C-I/C-P Samsung - K6R1016V1C 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 105,95,93 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48FPBGA ; Production Status = Eol ; Comments = Converted Into K6R1016V1D
  263. K6R1016V1C-J Samsung - K6R1016V1C 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 105,95,93 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48FPBGA ; Production Status = Eol ; Comments = Converted Into K6R1016V1D
  264. K6R1016V1C-T Samsung - K6R1016V1C 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 105,95,93 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48FPBGA ; Production Status = Eol ; Comments = Converted Into K6R1016V1D
  265. K6R1016V1D Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  266. K6R1016V1D-08 Samsung - K6R1016V1D 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 20,5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  267. K6R1016V1D-10 Samsung - K6R1016V1D 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 20,5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  268. K6R1016V1D-EC08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  269. K6R1016V1D-EC08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  270. K6R1016V1D-EC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  271. K6R1016V1D-EC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  272. K6R1016V1D-EI08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  273. K6R1016V1D-EI08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  274. K6R1016V1D-EI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  275. K6R1016V1D-EI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  276. K6R1016V1D-J Samsung - K6R1016V1D 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 20,5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  277. K6R1016V1D-JC08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  278. K6R1016V1D-JC08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  279. K6R1016V1D-JC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  280. K6R1016V1D-JC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  281. K6R1016V1D-JI08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  282. K6R1016V1D-JI08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  283. K6R1016V1D-JI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  284. K6R1016V1D-JI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  285. K6R1016V1D-KC08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  286. K6R1016V1D-KC08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  287. K6R1016V1D-KC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  288. K6R1016V1D-KC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  289. K6R1016V1D-KI08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  290. K6R1016V1D-KI08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  291. K6R1016V1D-KI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  292. K6R1016V1D-KI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  293. K6R1016V1D-T Samsung - K6R1016V1D 64K X 16 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 64Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 20,5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  294. K6R1016V1D-TC08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  295. K6R1016V1D-TC08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  296. K6R1016V1D-TC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  297. K6R1016V1D-TC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  298. K6R1016V1D-TI08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  299. K6R1016V1D-TI08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  300. K6R1016V1D-TI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  301. K6R1016V1D-TI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  302. K6R1016V1D-UC08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  303. K6R1016V1D-UC08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  304. K6R1016V1D-UC10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  305. K6R1016V1D-UC10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  306. K6R1016V1D-UI08 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  307. K6R1016V1D-UI08 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  308. K6R1016V1D-UI10 Samsung - 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
  309. K6R1016V1D-UI10 Samsung - 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
  310. K6R3024V1D Samsung - 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
  311. K6R3024V1D-09 Samsung - K6R3024V1D 128K X 24 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx24 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 40,15 ; Package = 119PBGA ; Production Status = Mass Production ; Comments = -
  312. K6R3024V1D-10 Samsung - K6R3024V1D 128K X 24 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx24 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 40,15 ; Package = 119PBGA ; Production Status = Mass Production ; Comments = -
  313. K6R3024V1D-12 Samsung - K6R3024V1D 128K X 24 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 128Kx24 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10 ; Operating Temperature = C ; Operating Current(mA) = 150 ; Standby Current(mA) = 40,15 ; Package = 119PBGA ; Production Status = Mass Production ; Comments = -
  314. K6R3024V1D-HC09 Samsung - 128k X 24 Bit High-speed Cmos Static Ram(3.3v Operating)
  315. K6R3024V1D-HC10 Samsung - 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
  316. K6R3024V1D-HC12 Samsung - 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
  317. K6R3024V1D-HI09 Samsung - 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
  318. K6R3024V1D-HI10 Samsung - 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
  319. K6R3024V1D-HI12 Samsung - 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
  320. K6R4004C1A Samsung - K6R4004C1A 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  321. K6R4004C1A-15 Samsung - K6R4004C1A 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  322. K6R4004C1A-17 Samsung - K6R4004C1A 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  323. K6R4004C1A-20 Samsung - K6R4004C1A 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  324. K6R4004C1A-C Samsung - K6R4004C1A 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  325. K6R4004C1A-C15 Samsung - K6R4004C1A 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  326. K6R4004C1A-C17 Samsung - K6R4004C1A 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  327. K6R4004C1A-C20 Samsung - K6R4004C1A 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  328. K6R4004C1A-E Samsung - K6R4004C1A 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  329. K6R4004C1A-E15 Samsung - K6R4004C1A 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  330. K6R4004C1A-E17 Samsung - K6R4004C1A 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  331. K6R4004C1A-E20 Samsung - K6R4004C1A 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  332. K6R4004C1A-I Samsung - K6R4004C1A 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  333. K6R4004C1A-I15 Samsung - K6R4004C1A 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  334. K6R4004C1A-I17 Samsung - K6R4004C1A 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  335. K6R4004C1A-I20 Samsung - K6R4004C1A 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  336. K6R4004C1A-J Samsung - K6R4004C1A 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 150 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  337. K6R4004C1B Samsung - K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 195 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  338. K6R4004C1B-10 Samsung - K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 195 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  339. K6R4004C1B-12 Samsung - K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 195 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  340. K6R4004C1B-15 Samsung - K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 195 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  341. K6R4004C1B-C Samsung - K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 195 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  342. K6R4004C1B-C10 Samsung - K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 195 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  343. K6R4004C1B-C12 Samsung - K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 195 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  344. K6R4004C1B-C15 Samsung - K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 195 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  345. K6R4004C1B-I Samsung - K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 195 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  346. K6R4004C1B-I10 Samsung - K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 195 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  347. K6R4004C1B-I12 Samsung - K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 195 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  348. K6R4004C1B-I15 Samsung - K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 195 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  349. K6R4004C1B-J Samsung - K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 195 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  350. K6R4004C1B-T Samsung - K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 195 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  351. K6R4004C1C Samsung - K6R4004C1C 1M X 4 Bit (with /OE)High-Speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,e,i ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 60,10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  352. K6R4004C1C-10 Samsung - K6R4004C1C 1M X 4 Bit (with /OE)High-Speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,e,i ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 60,10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  353. K6R4004C1C-12 Samsung - K6R4004C1C 1M X 4 Bit (with /OE)High-Speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,e,i ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 60,10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  354. K6R4004C1C-15 Samsung - K6R4004C1C 1M X 4 Bit (with /OE)High-Speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,e,i ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 60,10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  355. K6R4004C1C-C Samsung - 1Mx4 Bit High Speed Static RAM(5V Operating).
  356. K6R4004C1C-C10 Samsung - 1Mx4 Bit High Speed Static RAM(5V Operating).
  357. K6R4004C1C-C12 Samsung - 1Mx4 Bit High Speed Static RAM(5V Operating).
  358. K6R4004C1C-C15 Samsung - 1mx4 Bit High Speed Static Ram(5v Operating).
  359. K6R4004C1C-C20 Samsung - 1Mx4 Bit High Speed Static RAM(5V Operating).
  360. K6R4004C1C-E Samsung - 1Mx4 Bit High Speed Static RAM(5V Operating).
  361. K6R4004C1C-E10 Samsung - 1Mx4 Bit High Speed Static RAM(5V Operating).
  362. K6R4004C1C-E12 Samsung - 1Mx4 Bit High Speed Static RAM(5V Operating).
  363. K6R4004C1C-E15 Samsung - 1Mx4 Bit High Speed Static RAM(5V Operating).
  364. K6R4004C1C-E20 Samsung - 1Mx4 Bit High Speed Static RAM(5V Operating).
  365. K6R4004C1C-I Samsung - 1Mx4 Bit High Speed Static RAM(5V Operating).
  366. K6R4004C1C-I10 Samsung - 1Mx4 Bit High Speed Static RAM(5V Operating).
  367. K6R4004C1C-I12 Samsung - 1Mx4 Bit High Speed Static RAM(5V Operating).
  368. K6R4004C1C-I15 Samsung - 1Mx4 Bit High Speed Static RAM(5V Operating).
  369. K6R4004C1C-I20 Samsung - 1Mx4 Bit High Speed Static RAM(5V Operating).
  370. K6R4004C1C-J Samsung - K6R4004C1C 1M X 4 Bit (with /OE)High-Speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,e,i ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 60,10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  371. K6R4004C1D Samsung - 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges
  372. K6R4004C1D-10 Samsung - K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C ; Operating Current(mA) = 65 ; Standby Current(mA) = 20,5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  373. K6R4004C1D-12 Samsung - K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C ; Operating Current(mA) = 65 ; Standby Current(mA) = 20,5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  374. K6R4004C1D-J Samsung - K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C ; Operating Current(mA) = 65 ; Standby Current(mA) = 20,5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  375. K6R4004C1D-JC Samsung - 1mx4 Bit High Speed Static Ram(3.3v Operating). Operated At Commercial and Industrial Temperature Ranges
  376. K6R4004C1D-JC10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  377. K6R4004C1D-JCI Samsung - K6R4004C1D 1M X 4 Bit High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C ; Operating Current(mA) = 65 ; Standby Current(mA) = 20,5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  378. K6R4004C1D-JCI10 Samsung - 1mx4 Bit High Speed Static RAM (5.0v Operating). Operated at Commercial and Industrial Temperature Ranges.
  379. K6R4004C1D-JI10 Samsung - 256kx16 Bit High Speed Static Ram(5.0v Operating). Operated At Commercial and Industrial Temperature Ranges.
  380. K6R4004C1D-KC10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  381. K6R4004C1D-KI10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  382. K6R4004V1B Samsung - K6R4004C1B 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 185 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  383. K6R4004V1B-10 Samsung - K6R4004C1B 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 185 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  384. K6R4004V1B-12 Samsung - K6R4004C1B 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 185 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  385. K6R4004V1B-15 Samsung - K6R4004C1B 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 185 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  386. K6R4004V1B-C10 Samsung - K6R4004C1B 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 185 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  387. K6R4004V1B-C12 Samsung - K6R4004C1B 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 185 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  388. K6R4004V1B-C15 Samsung - K6R4004C1B 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 185 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  389. K6R4004V1B-C/B-L Samsung - K6R4004C1B 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 185 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  390. K6R4004V1B-I10 Samsung - K6R4004C1B 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 185 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  391. K6R4004V1B-I12 Samsung - K6R4004C1B 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 185 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  392. K6R4004V1B-I15 Samsung - K6R4004C1B 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 185 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  393. K6R4004V1B-I/B-P Samsung - K6R4004C1B 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 185 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  394. K6R4004V1B-J Samsung - K6R4004C1B 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 185 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  395. K6R4004V1B-T Samsung - K6R4004C1B 1M X 4 Bit (With OE) High-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 185 ; Standby Current(mA) = 10 ; Package = 32SOJ,32TSOP2 ; Production Status = Eol ; Comments = -
  396. K6R4004V1C Samsung - K6R4004V1C 1M X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 150,140,130 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  397. K6R4004V1C-10 Samsung - K6R4004V1C 1M X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 150,140,130 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  398. K6R4004V1C-12 Samsung - K6R4004V1C 1M X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 150,140,130 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  399. K6R4004V1C-15 Samsung - K6R4004V1C 1M X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 150,140,130 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  400. K6R4004V1C-C Samsung - K6R4004V1C 1M X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 150,140,130 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  401. K6R4004V1C-C10 Samsung - K6R4004V1C 1M X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 150,140,130 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  402. K6R4004V1C-C12 Samsung - K6R4004V1C 1M X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 150,140,130 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  403. K6R4004V1C-C15 Samsung - K6R4004V1C 1M X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 150,140,130 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  404. K6R4004V1C-C/C-L Samsung - K6R4004V1C 1M X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 150,140,130 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  405. K6R4004V1C-I Samsung - K6R4004V1C 1M X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 150,140,130 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  406. K6R4004V1C-I10 Samsung - K6R4004V1C 1M X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 150,140,130 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  407. K6R4004V1C-I12 Samsung - K6R4004V1C 1M X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 150,140,130 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  408. K6R4004V1C-I15 Samsung - K6R4004V1C 1M X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 150,140,130 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  409. K6R4004V1C-I/C-P Samsung - K6R4004V1C 1M X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 150,140,130 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  410. K6R4004V1C-J Samsung - K6R4004V1C 1M X 4 Bit (with Oe)high-speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 150,140,130 ; Standby Current(mA) = 10 ; Package = 32SOJ ; Production Status = Eol ; Comments = -
  411. K6R4004V1D Samsung - 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges
  412. K6R4004V1D-08 Samsung - K6R4004V1D 1M X 4 Bit (with /OE)High-Speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 20,5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  413. K6R4004V1D-10 Samsung - K6R4004V1D 1M X 4 Bit (with /OE)High-Speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 20,5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  414. K6R4004V1D-J Samsung - K6R4004V1D 1M X 4 Bit (with /OE)High-Speed CMOS Static RAM ; Organization = 1Mx4 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 20,5 ; Package = 32SOJ ; Production Status = Mass Production ; Comments = -
  415. K6R4004V1D-JC08 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  416. K6R4004V1D-JC10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  417. K6R4004V1D-JCI08/10 Samsung - 1mx4 Bit High Speed Static RAM (5.0v Operating). Operated at Commercial and Industrial Temperature Ranges.
  418. K6R4004V1D-JI08 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  419. K6R4004V1D-JI10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  420. K6R4004V1D-JKCI Samsung - 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges
  421. K6R4004V1D-KC08 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  422. K6R4004V1D-KC10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  423. K6R4004V1D-KI08 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  424. K6R4004V1D-KI10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  425. K6R4008C1A Samsung - K6R4008C1A 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 10 ; Package = 36SOJ ; Production Status = Eol ; Comments = -
  426. K6R4008C1A-15 Samsung - K6R4008C1A 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 10 ; Package = 36SOJ ; Production Status = Eol ; Comments = -
  427. K6R4008C1A-17 Samsung - K6R4008C1A 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 10 ; Package = 36SOJ ; Production Status = Eol ; Comments = -
  428. K6R4008C1A-20 Samsung - K6R4008C1A 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 10 ; Package = 36SOJ ; Production Status = Eol ; Comments = -
  429. K6R4008C1A-C Samsung - K6R4008C1A 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 10 ; Package = 36SOJ ; Production Status = Eol ; Comments = -
  430. K6R4008C1A-C15 Samsung - K6R4008C1A 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 10 ; Package = 36SOJ ; Production Status = Eol ; Comments = -
  431. K6R4008C1A-C17 Samsung - K6R4008C1A 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 10 ; Package = 36SOJ ; Production Status = Eol ; Comments = -
  432. K6R4008C1A-C20 Samsung - K6R4008C1A 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 10 ; Package = 36SOJ ; Production Status = Eol ; Comments = -
  433. K6R4008C1A-E Samsung - K6R4008C1A 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 10 ; Package = 36SOJ ; Production Status = Eol ; Comments = -
  434. K6R4008C1A-E15 Samsung - K6R4008C1A 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 10 ; Package = 36SOJ ; Production Status = Eol ; Comments = -
  435. K6R4008C1A-E17 Samsung - K6R4008C1A 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 10 ; Package = 36SOJ ; Production Status = Eol ; Comments = -
  436. K6R4008C1A-E20 Samsung - K6R4008C1A 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 10 ; Package = 36SOJ ; Production Status = Eol ; Comments = -
  437. K6R4008C1A-I Samsung - K6R4008C1A 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 10 ; Package = 36SOJ ; Production Status = Eol ; Comments = -
  438. K6R4008C1A-I15 Samsung - K6R4008C1A 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 10 ; Package = 36SOJ ; Production Status = Eol ; Comments = -
  439. K6R4008C1A-I17 Samsung - K6R4008C1A 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 10 ; Package = 36SOJ ; Production Status = Eol ; Comments = -
  440. K6R4008C1A-I20 Samsung - K6R4008C1A 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 10 ; Package = 36SOJ ; Production Status = Eol ; Comments = -
  441. K6R4008C1A-J Samsung - K6R4008C1A 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170 ; Standby Current(mA) = 10 ; Package = 36SOJ ; Production Status = Eol ; Comments = -
  442. K6R4008C1B Samsung - K6R4008C1B 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 36SOJ,36TSOP2 ; Production Status = Eol ; Comments = -
  443. K6R4008C1B-10 Samsung - K6R4008C1B 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 36SOJ,36TSOP2 ; Production Status = Eol ; Comments = -
  444. K6R4008C1B-12 Samsung - K6R4008C1B 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 36SOJ,36TSOP2 ; Production Status = Eol ; Comments = -
  445. K6R4008C1B-15 Samsung - K6R4008C1B 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 36SOJ,36TSOP2 ; Production Status = Eol ; Comments = -
  446. K6R4008C1B-C Samsung - K6R4008C1B 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 36SOJ,36TSOP2 ; Production Status = Eol ; Comments = -
  447. K6R4008C1B-C10 Samsung - K6R4008C1B 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 36SOJ,36TSOP2 ; Production Status = Eol ; Comments = -
  448. K6R4008C1B-C12 Samsung - K6R4008C1B 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 36SOJ,36TSOP2 ; Production Status = Eol ; Comments = -
  449. K6R4008C1B-C15 Samsung - K6R4008C1B 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 36SOJ,36TSOP2 ; Production Status = Eol ; Comments = -
  450. K6R4008C1B-I Samsung - K6R4008C1B 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 36SOJ,36TSOP2 ; Production Status = Eol ; Comments = -
  451. K6R4008C1B-I10 Samsung - K6R4008C1B 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 36SOJ,36TSOP2 ; Production Status = Eol ; Comments = -
  452. K6R4008C1B-I12 Samsung - K6R4008C1B 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 36SOJ,36TSOP2 ; Production Status = Eol ; Comments = -
  453. K6R4008C1B-I15 Samsung - K6R4008C1B 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 36SOJ,36TSOP2 ; Production Status = Eol ; Comments = -
  454. K6R4008C1B-J Samsung - K6R4008C1B 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 36SOJ,36TSOP2 ; Production Status = Eol ; Comments = -
  455. K6R4008C1B-T Samsung - K6R4008C1B 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 36SOJ,36TSOP2 ; Production Status = Eol ; Comments = -
  456. K6R4008C1C Samsung - K6R4008C1C 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170,160,150 ; Standby Current(mA) = 60,10 ; Package = 36SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  457. K6R4008C1C-10 Samsung - K6R4008C1C 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170,160,150 ; Standby Current(mA) = 60,10 ; Package = 36SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  458. K6R4008C1C-12 Samsung - K6R4008C1C 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170,160,150 ; Standby Current(mA) = 60,10 ; Package = 36SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  459. K6R4008C1C-15 Samsung - K6R4008C1C 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170,160,150 ; Standby Current(mA) = 60,10 ; Package = 36SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  460. K6R4008C1C-C Samsung - 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
  461. K6R4008C1C-C10 Samsung - 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
  462. K6R4008C1C-C12 Samsung - 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
  463. K6R4008C1C-C15 Samsung - 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
  464. K6R4008C1C-E Samsung - 512kx8 Bit High Speed Static Ram(5v Operating). Operated At Extended and Industrial Temperature Ranges.
  465. K6R4008C1C-E10 Samsung - 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
  466. K6R4008C1C-E12 Samsung - 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
  467. K6R4008C1C-E15 Samsung - 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
  468. K6R4008C1C-I Samsung - 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
  469. K6R4008C1C-I10 Samsung - 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
  470. K6R4008C1C-I12 Samsung - 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
  471. K6R4008C1C-I15 Samsung - 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
  472. K6R4008C1C-J Samsung - K6R4008C1C 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170,160,150 ; Standby Current(mA) = 60,10 ; Package = 36SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  473. K6R4008C1C-T Samsung - K6R4008C1C 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,e,i ; Operating Current(mA) = 170,160,150 ; Standby Current(mA) = 60,10 ; Package = 36SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  474. K6R4008C1D Samsung - 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges
  475. K6R4008C1D-10 Samsung - K6R4008C1D 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(mA) = 5 ; Package = 36SOJ,44TSOP2 ; Production Status = Mass Production ; Comments = -
  476. K6R4008C1D-J Samsung - K6R4008C1D 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(mA) = 5 ; Package = 36SOJ,44TSOP2 ; Production Status = Mass Production ; Comments = -
  477. K6R4008C1D-JC Samsung - 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges
  478. K6R4008C1D-JC10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  479. K6R4008C1D-JI10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  480. K6R4008C1D-JT10 Samsung - K6R4008C1D 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(mA) = 5 ; Package = 36SOJ,44TSOP2 ; Production Status = Mass Production ; Comments = -
  481. K6R4008C1D-JTCI10 Samsung - 1mx4 Bit High Speed Static RAM (5.0v Operating). Operated at Commercial and Industrial Temperature Ranges.
  482. K6R4008C1D-KC10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  483. K6R4008C1D-KI10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  484. K6R4008C1D-T Samsung - K6R4008C1D 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(mA) = 5 ; Package = 36SOJ,44TSOP2 ; Production Status = Mass Production ; Comments = -
  485. K6R4008C1D-TC10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  486. K6R4008C1D-TI10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  487. K6R4008C1D-UC10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  488. K6R4008C1D-UI10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  489. K6R4008V1B Samsung - CMOS SRAM
  490. K6R4008V1B-10 Samsung - K6R4008V1B 512K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 512Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 205 ; Standby Current(mA) = 10/1.2 ; Package = 36SOJ,36TSOP2,44TSOP2 ; Production Status = Eol ; Comments = -
  491. K6R4008V1B-12 Samsung - K6R4008V1B 512K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 512Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 205 ; Standby Current(mA) = 10/1.2 ; Package = 36SOJ,36TSOP2,44TSOP2 ; Production Status = Eol ; Comments = -
  492. K6R4008V1B-15 Samsung - K6R4008V1B 512K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 512Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 205 ; Standby Current(mA) = 10/1.2 ; Package = 36SOJ,36TSOP2,44TSOP2 ; Production Status = Eol ; Comments = -
  493. K6R4008V1B-C10 Samsung - CMOS SRAM
  494. K6R4008V1B-C12 Samsung - Cmos Sram
  495. K6R4008V1B-C15 Samsung - CMOS SRAM
  496. K6R4008V1B-C/B-L Samsung - K6R4008V1B 512K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 512Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 205 ; Standby Current(mA) = 10/1.2 ; Package = 36SOJ,36TSOP2,44TSOP2 ; Production Status = Eol ; Comments = -
  497. K6R4008V1B-I10 Samsung - CMOS SRAM
  498. K6R4008V1B-I12 Samsung - CMOS SRAM
  499. K6R4008V1B-I15 Samsung - CMOS SRAM
  500. K6R4008V1B-I/B-P Samsung - K6R4008V1B 512K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 512Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 205 ; Standby Current(mA) = 10/1.2 ; Package = 36SOJ,36TSOP2,44TSOP2 ; Production Status = Eol ; Comments = -
  501. K6R4008V1B-J Samsung - K6R4008V1B 512K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 512Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 205 ; Standby Current(mA) = 10/1.2 ; Package = 36SOJ,36TSOP2,44TSOP2 ; Production Status = Eol ; Comments = -
  502. K6R4008V1B-T Samsung - K6R4008V1B 512K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 512Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 205 ; Standby Current(mA) = 10/1.2 ; Package = 36SOJ,36TSOP2,44TSOP2 ; Production Status = Eol ; Comments = -
  503. K6R4008V1B-U Samsung - K6R4008V1B 512K X 8 Bit High-speed CMOS Static RAM(3.3V Operating) ; Organization = 512Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 205 ; Standby Current(mA) = 10/1.2 ; Package = 36SOJ,36TSOP2,44TSOP2 ; Production Status = Eol ; Comments = -
  504. K6R4008V1C Samsung - K6R4008V1C 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 155,145,135 ; Standby Current(mA) = 10 ; Package = 36SOJ,44TSOP2 ; Production Status = Eol ; Comments = ,
  505. K6R4008V1C-10 Samsung - K6R4008V1C 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 155,145,135 ; Standby Current(mA) = 10 ; Package = 36SOJ,44TSOP2 ; Production Status = Eol ; Comments = ,
  506. K6R4008V1C-12 Samsung - K6R4008V1C 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 155,145,135 ; Standby Current(mA) = 10 ; Package = 36SOJ,44TSOP2 ; Production Status = Eol ; Comments = ,
  507. K6R4008V1C-15 Samsung - K6R4008V1C 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 155,145,135 ; Standby Current(mA) = 10 ; Package = 36SOJ,44TSOP2 ; Production Status = Eol ; Comments = ,
  508. K6R4008V1C-C Samsung - 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
  509. K6R4008V1C-C10 Samsung - 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
  510. K6R4008V1C-C12 Samsung - 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
  511. K6R4008V1C-C15 Samsung - 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
  512. K6R4008V1C-C/C-L Samsung - K6R4008V1C 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 155,145,135 ; Standby Current(mA) = 10 ; Package = 36SOJ,44TSOP2 ; Production Status = Eol ; Comments = ,
  513. K6R4008V1C-I Samsung - 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
  514. K6R4008V1C-I10 Samsung - 512kx8 Bit High Speed Static Ram(3.3v Operating). Operated At Commercial and Industrial Temperature Ranges.
  515. K6R4008V1C-I12 Samsung - 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
  516. K6R4008V1C-I15 Samsung - 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
  517. K6R4008V1C-I/C-P Samsung - K6R4008V1C 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 155,145,135 ; Standby Current(mA) = 10 ; Package = 36SOJ,44TSOP2 ; Production Status = Eol ; Comments = ,
  518. K6R4008V1C-J Samsung - K6R4008V1C 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 155,145,135 ; Standby Current(mA) = 10 ; Package = 36SOJ,44TSOP2 ; Production Status = Eol ; Comments = ,
  519. K6R4008V1C-L Samsung - 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
  520. K6R4008V1C-P Samsung - 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
  521. K6R4008V1C-T Samsung - K6R4008V1C 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 155,145,135 ; Standby Current(mA) = 10 ; Package = 36SOJ,44TSOP2 ; Production Status = Eol ; Comments = ,
  522. K6R4008V1D Samsung - 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges
  523. K6R4008V1D Samsung - 512kx8 Bit High Speed Static Ram(3.3v Operating). Operated At Commercial and Industrial Temperature Ranges.
  524. K6R4008V1D-08 Samsung - K6R4008V1D 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 36SOJ,44TSOP2 ; Production Status = Mass Production ; Comments = -
  525. K6R4008V1D-10 Samsung - K6R4008V1D 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 36SOJ,44TSOP2 ; Production Status = Mass Production ; Comments = -
  526. K6R4008V1D-J Samsung - K6R4008V1D 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 36SOJ,44TSOP2 ; Production Status = Mass Production ; Comments = -
  527. K6R4008V1D-JC Samsung - 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges
  528. K6R4008V1D-JC08 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  529. K6R4008V1D-JC10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  530. K6R4008V1D-JI08 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  531. K6R4008V1D-JI10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  532. K6R4008V1D-JTCI08/10 Samsung - 1mx4 Bit High Speed Static RAM (5.0v Operating). Operated at Commercial and Industrial Temperature Ranges.
  533. K6R4008V1D-KC08 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  534. K6R4008V1D-KC10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  535. K6R4008V1D-KI08 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  536. K6R4008V1D-KI10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  537. K6R4008V1D-T Samsung - K6R4008V1D 512K X 8 Bit High-speed CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 36SOJ,44TSOP2 ; Production Status = Mass Production ; Comments = -
  538. K6R4008V1D-TC08 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  539. K6R4008V1D-TC10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  540. K6R4008V1D-TI08 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  541. K6R4008V1D-TI10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  542. K6R4008V1D-UC08 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  543. K6R4008V1D-UC10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  544. K6R4008V1D-UI08 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  545. K6R4008V1D-UI10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  546. K6R4016C1A Samsung - K6R4016C1A 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  547. K6R4016C1A-15 Samsung - K6R4016C1A 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  548. K6R4016C1A-17 Samsung - K6R4016C1A 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  549. K6R4016C1A-20 Samsung - K6R4016C1A 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  550. K6R4016C1A-C Samsung - K6R4016C1A 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  551. K6R4016C1A-C15 Samsung - K6R4016C1A 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  552. K6R4016C1A-C17 Samsung - K6R4016C1A 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  553. K6R4016C1A-C20 Samsung - K6R4016C1A 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  554. K6R4016C1A-E Samsung - K6R4016C1A 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  555. K6R4016C1A-E15 Samsung - K6R4016C1A 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  556. K6R4016C1A-E17 Samsung - K6R4016C1A 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  557. K6R4016C1A-E20 Samsung - K6R4016C1A 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  558. K6R4016C1A-I Samsung - K6R4016C1A 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  559. K6R4016C1A-I15 Samsung - K6R4016C1A 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  560. K6R4016C1A-I17 Samsung - K6R4016C1A 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  561. K6R4016C1A-I20 Samsung - K6R4016C1A 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  562. K6R4016C1A-J Samsung - K6R4016C1A 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  563. K6R4016C1A-T Samsung - K6R4016C1A 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 15,17,20 ; Operating Temperature = C,e,i ; Operating Current(mA) = 210 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  564. K6R4016C1B Samsung - K6R4016C1B 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 260 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  565. K6R4016C1B-10 Samsung - K6R4016C1B 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 260 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  566. K6R4016C1B-12 Samsung - K6R4016C1B 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 260 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  567. K6R4016C1B-15 Samsung - K6R4016C1B 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 260 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  568. K6R4016C1B-C Samsung - K6R4016C1B 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 260 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  569. K6R4016C1B-C10 Samsung - K6R4016C1B 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 260 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  570. K6R4016C1B-C12 Samsung - K6R4016C1B 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 260 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  571. K6R4016C1B-C15 Samsung - K6R4016C1B 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 260 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  572. K6R4016C1B-I Samsung - K6R4016C1B 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 260 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  573. K6R4016C1B-I10 Samsung - K6R4016C1B 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 260 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  574. K6R4016C1B-I12 Samsung - K6R4016C1B 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 260 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  575. K6R4016C1B-I15 Samsung - K6R4016C1B 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 260 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  576. K6R4016C1B-J Samsung - K6R4016C1B 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 260 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  577. K6R4016C1B-T Samsung - K6R4016C1B 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 260 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  578. K6R4016C1C Samsung - K6R4016C1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,e,i ; Operating Current(mA) = 185,175,165 ; Standby Current(mA) = 60,10 ; Package = 44SOJ,44TSOP2,48FBGA ; Production Status = Eol ; Comments = ,
  579. K6R4016C1C-10 Samsung - K6R4016C1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,e,i ; Operating Current(mA) = 185,175,165 ; Standby Current(mA) = 60,10 ; Package = 44SOJ,44TSOP2,48FBGA ; Production Status = Eol ; Comments = ,
  580. K6R4016C1C-12 Samsung - K6R4016C1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,e,i ; Operating Current(mA) = 185,175,165 ; Standby Current(mA) = 60,10 ; Package = 44SOJ,44TSOP2,48FBGA ; Production Status = Eol ; Comments = ,
  581. K6R4016C1C-15 Samsung - K6R4016C1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,e,i ; Operating Current(mA) = 185,175,165 ; Standby Current(mA) = 60,10 ; Package = 44SOJ,44TSOP2,48FBGA ; Production Status = Eol ; Comments = ,
  582. K6R4016C1C-C Samsung - 256kx16 Bit High Speed Static Ram(5v Operating).
  583. K6R4016C1C-C10 Samsung - 256Kx16 Bit High Speed Static RAM(5V Operating).
  584. K6R4016C1C-C12 Samsung - 256Kx16 Bit High Speed Static RAM(5V Operating).
  585. K6R4016C1C-C15 Samsung - 256Kx16 Bit High Speed Static RAM(5V Operating).
  586. K6R4016C1C-E Samsung - 256Kx16 Bit High Speed Static RAM(5V Operating).
  587. K6R4016C1C-E10 Samsung - 256Kx16 Bit High Speed Static RAM(5V Operating).
  588. K6R4016C1CE12 Samsung - 256Kx16 Bit High Speed Static RAM(5V Operating).
  589. K6R4016C1CE15 Samsung - 256Kx16 Bit High Speed Static RAM(5V Operating).
  590. K6R4016C1C-I Samsung - 256Kx16 Bit High Speed Static RAM(5V Operating).
  591. K6R4016C1C-I10 Samsung - 256Kx16 Bit High Speed Static RAM(5V Operating).
  592. K6R4016C1C-I12 Samsung - 256Kx16 Bit High Speed Static RAM(5V Operating).
  593. K6R4016C1C-I15 Samsung - 256Kx16 Bit High Speed Static RAM(5V Operating).
  594. K6R4016C1C-J Samsung - K6R4016C1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,e,i ; Operating Current(mA) = 185,175,165 ; Standby Current(mA) = 60,10 ; Package = 44SOJ,44TSOP2,48FBGA ; Production Status = Eol ; Comments = ,
  595. K6R4016C1C-T Samsung - K6R4016C1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,e,i ; Operating Current(mA) = 185,175,165 ; Standby Current(mA) = 60,10 ; Package = 44SOJ,44TSOP2,48FBGA ; Production Status = Eol ; Comments = ,
  596. K6R4016C1D Samsung - 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges
  597. K6R4016C1D Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  598. K6R4016C1D-10 Samsung - K6R4016C1D 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Mass Production ; Comments = -
  599. K6R4016C1D-EC10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  600. K6R4016C1D-EC8 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  601. K6R4016C1D-EI10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  602. K6R4016C1D-EI8 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  603. K6R4016C1D-EL10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  604. K6R4016C1D-EL8 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  605. K6R4016C1D-EP10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  606. K6R4016C1D-EP8 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  607. K6R4016C1D-J Samsung - K6R4016C1D 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Mass Production ; Comments = -
  608. K6R4016C1D-JC Samsung - 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges
  609. K6R4016C1D-JC10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  610. K6R4016C1D-JC8 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  611. K6R4016C1D-JI10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  612. K6R4016C1D-JI8 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  613. K6R4016C1D-JL10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  614. K6R4016C1D-JL8 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  615. K6R4016C1D-JP10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  616. K6R4016C1D-JP8 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  617. K6R4016C1D-KC10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  618. K6R4016C1D-KC8 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  619. K6R4016C1D-KI10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  620. K6R4016C1D-KI8 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  621. K6R4016C1D-KL10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  622. K6R4016C1D-KL8 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  623. K6R4016C1D-KP10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  624. K6R4016C1D-KP8 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  625. K6R4016C1D-T Samsung - K6R4016C1D 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 5.0 ; Speed-tAA(ns) = 10 ; Operating Temperature = C,i ; Operating Current(mA) = 65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2 ; Production Status = Mass Production ; Comments = -
  626. K6R4016C1D-TC10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  627. K6R4016C1D-TC8 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  628. K6R4016C1D-TI10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  629. K6R4016C1D-TI8 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  630. K6R4016C1D-TL10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  631. K6R4016C1D-TL8 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  632. K6R4016C1D-TP10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  633. K6R4016C1D-TP8 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  634. K6R4016C1D-UC10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  635. K6R4016C1D-UC8 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  636. K6R4016C1D-UI10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  637. K6R4016C1D-UI8 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  638. K6R4016C1D-UL10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  639. K6R4016C1D-UL8 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  640. K6R4016C1D-UP10 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  641. K6R4016C1D-UP8 Samsung - 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  642. K6R4016V1 Samsung - 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  643. K6R4016V1B Samsung - K6R4016V1B 256K X 16 Bit High-speed CMOS Static RAM(3.3V Operation) ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 250 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  644. K6R4016V1B-10 Samsung - K6R4016V1B 256K X 16 Bit High-speed CMOS Static RAM(3.3V Operation) ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 250 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  645. K6R4016V1B-12 Samsung - K6R4016V1B 256K X 16 Bit High-speed CMOS Static RAM(3.3V Operation) ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 250 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  646. K6R4016V1B-15 Samsung - K6R4016V1B 256K X 16 Bit High-speed CMOS Static RAM(3.3V Operation) ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 250 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  647. K6R4016V1B-C10 Samsung - K6R4016V1B 256K X 16 Bit High-speed CMOS Static RAM(3.3V Operation) ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 250 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  648. K6R4016V1B-C12 Samsung - K6R4016V1B 256K X 16 Bit High-speed CMOS Static RAM(3.3V Operation) ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 250 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  649. K6R4016V1B-C15 Samsung - K6R4016V1B 256K X 16 Bit High-speed CMOS Static RAM(3.3V Operation) ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 250 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  650. K6R4016V1B-C/B-L Samsung - K6R4016V1B 256K X 16 Bit High-speed CMOS Static RAM(3.3V Operation) ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 250 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  651. K6R4016V1B-I10 Samsung - K6R4016V1B 256K X 16 Bit High-speed CMOS Static RAM(3.3V Operation) ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 250 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  652. K6R4016V1B-I12 Samsung - K6R4016V1B 256K X 16 Bit High-speed CMOS Static RAM(3.3V Operation) ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 250 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  653. K6R4016V1B-I15 Samsung - K6R4016V1B 256K X 16 Bit High-speed CMOS Static RAM(3.3V Operation) ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 250 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  654. K6R4016V1B-I/B-P Samsung - K6R4016V1B 256K X 16 Bit High-speed CMOS Static RAM(3.3V Operation) ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 250 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  655. K6R4016V1B-J Samsung - K6R4016V1B 256K X 16 Bit High-speed CMOS Static RAM(3.3V Operation) ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 250 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  656. K6R4016V1B-T Samsung - K6R4016V1B 256K X 16 Bit High-speed CMOS Static RAM(3.3V Operation) ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i ; Operating Current(mA) = 250 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2 ; Production Status = Eol ; Comments = -
  657. K6R4016V1C Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
  658. K6R4016V1C-10 Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
  659. K6R4016V1C-12 Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
  660. K6R4016V1C-15 Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
  661. K6R4016V1C-C Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
  662. K6R4016V1C-C10 Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
  663. K6R4016V1C-C12 Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
  664. K6R4016V1C-C15 Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
  665. K6R4016V1C-C/C-L Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
  666. K6R4016V1C-I Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
  667. K6R4016V1C-I10 Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
  668. K6R4016V1C-I12 Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
  669. K6R4016V1C-I15 Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
  670. K6R4016V1C-I/C-P Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
  671. K6R4016V1C-J Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
  672. K6R4016V1C-T Samsung - K6R4016V1C 256K X 16 Bit High-speed CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 10,12,15 ; Operating Temperature = C,i,l,p ; Operating Current(mA) = 160,150,140 ; Standby Current(mA) = 10 ; Package = 44SOJ,44TSOP2, 48FBGA ; Production Status = Eol ; Comments = Converted Into K6R4016V1D
  673. K6R4016V1D Samsung - 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
  674. K6R4016V1D Samsung - 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges
  675. K6R4016V1D-08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  676. K6R4016V1D-10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  677. K6R4016V1D-EC08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  678. K6R4016V1D-EC10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  679. K6R4016V1D-EI08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  680. K6R4016V1D-EI10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  681. K6R4016V1D-EL08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  682. K6R4016V1D-EL10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  683. K6R4016V1D-EP08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  684. K6R4016V1D-EP10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  685. K6R4016V1D-J Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  686. K6R4016V1D-JC Samsung - 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges
  687. K6R4016V1D-JC08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  688. K6R4016V1D-JC10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  689. K6R4016V1D-JI08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  690. K6R4016V1D-JI10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  691. K6R4016V1D-JL08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  692. K6R4016V1D-JL10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  693. K6R4016V1D-JP08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  694. K6R4016V1D-JP10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  695. K6R4016V1D-T Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  696. K6R4016V1D-TC08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  697. K6R4016V1D-TC10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  698. K6R4016V1D-TI08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  699. K6R4016V1D-TI10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  700. K6R4016V1D-TL08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  701. K6R4016V1D-TL10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  702. K6R4016V1D-TP08 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  703. K6R4016V1D-TP10 Samsung - K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating). ; Organization = 256Kx16 ; Vcc(V) = 3.3 ; Speed-tAA(ns) = 8,10 ; Operating Temperature = C,i ; Operating Current(mA) = 80,65 ; Standby Current(mA) = 5 ; Package = 44SOJ,44TSOP2,48TBGA ; Production Status = Mass Production ; Comments = -
  704. K6T0808C1D Samsung - 32Kx8 bit Low Power CMOS Static RAM
  705. K6T0808C1D-B Samsung - 32Kx8 bit Low Power CMOS Static RAM
  706. K6T0808C1D-DB55 Samsung - 32kx8 Bit Low Power Cmos Static Ram
  707. K6T0808C1D-DB70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  708. K6T0808C1D-DL55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  709. K6T0808C1D-DL70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  710. K6T0808C1D-F Samsung - 32Kx8 bit Low Power CMOS Static RAM
  711. K6T0808C1D-GB55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  712. K6T0808C1D-GB70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  713. K6T0808C1D-GF70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  714. K6T0808C1D-GL55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  715. K6T0808C1D-GL70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  716. K6T0808C1D-GP70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  717. K6T0808C1D-L Samsung - 32Kx8 bit Low Power CMOS Static RAM
  718. K6T0808C1D-L/-B Samsung - K6T0808C1D 32K X 8 Bit Low Power CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X0808C1D Recommended
  719. K6T0808C1D-P Samsung - 32Kx8 bit Low Power CMOS Static RAM
  720. K6T0808C1D-P/-F Samsung - K6T0808C1D 32K X 8 Bit Low Power CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X0808C1D Recommended
  721. K6T0808C1D-RB55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  722. K6T0808C1D-RB70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  723. K6T0808C1D-RF70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  724. K6T0808C1D-RL55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  725. K6T0808C1D-RL70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  726. K6T0808C1D-RP70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  727. K6T0808C1D-TB55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  728. K6T0808C1D-TB70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  729. K6T0808C1D-TF70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  730. K6T0808C1D-TL55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  731. K6T0808C1D-TL70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  732. K6T0808C1D-TP70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  733. K6T0808U1D Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  734. K6T0808U1D-B Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  735. K6T0808U1D-D Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  736. K6T0808U1D-F Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  737. K6T0808U1D-GB10 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  738. K6T0808U1D-GB70 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  739. K6T0808U1D-GB85 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  740. K6T0808U1D-GD10 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  741. K6T0808U1D-GD70 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  742. K6T0808U1D-GD85 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  743. K6T0808U1D-GF10 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  744. K6T0808U1D-GF70 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  745. K6T0808U1D-GF85 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  746. K6T0808U1D-RB10 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  747. K6T0808U1D-RB70 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  748. K6T0808U1D-RB85 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  749. K6T0808U1D-RD10 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  750. K6T0808U1D-RD70 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  751. K6T0808U1D-RD85 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  752. K6T0808U1D-RF10 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  753. K6T0808U1D-RF70 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  754. K6T0808U1D-RF85 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  755. K6T0808U1D-TB10 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  756. K6T0808U1D-TB70 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  757. K6T0808U1D-TB85 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  758. K6T0808U1D-TD10 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  759. K6T0808U1D-TD70 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  760. K6T0808U1D-TD85 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  761. K6T0808U1D-TF10 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  762. K6T0808U1D-TF70 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  763. K6T0808U1D-TF85 Samsung - K6T0808U1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = -
  764. K6T0808V1D Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  765. K6T0808V1D-B Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  766. K6T0808V1D-D Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  767. K6T0808V1D-F Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  768. K6T0808V1D-GB70 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  769. K6T0808V1D-GD70 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  770. K6T0808V1D-GF70 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  771. K6T0808V1D-RB10 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  772. K6T0808V1D-RB70 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  773. K6T0808V1D-RD10 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  774. K6T0808V1D-RD70 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  775. K6T0808V1D-RF10 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  776. K6T0808V1D-RF70 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  777. K6T0808V1D-TB10 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  778. K6T0808V1D-TB70 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  779. K6T0808V1D-TD10 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  780. K6T0808V1D-TD70 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  781. K6T0808V1D-TF10 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  782. K6T0808V1D-TF70 Samsung - K6T0808V1D 32K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 32Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 35 ; Standby Current(uA) = 5 ; Package = 28SOP,28TSOP1 ; Production Status = Eol ; Comments = Check Availability With Webmaster
  783. K6T0908U2B Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  784. K6T0908U2B-B Samsung - K6T0908U2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = Design is Not Recommended
  785. K6T0908U2B-F Samsung - K6T0908U2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = Design is Not Recommended
  786. K6T0908U2B-L Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  787. K6T0908U2B-P Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  788. K6T0908U2B-TB10 Samsung - K6T0908U2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = Design is Not Recommended
  789. K6T0908U2B-TB85 Samsung - K6T0908U2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = Design is Not Recommended
  790. K6T0908U2B-TF10 Samsung - K6T0908U2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = Design is Not Recommended
  791. K6T0908U2B-TF85 Samsung - K6T0908U2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = Design is Not Recommended
  792. K6T0908U2B-YF10 Samsung - K6T0908U2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = Design is Not Recommended
  793. K6T0908U2B-YF85 Samsung - K6T0908U2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = Design is Not Recommended
  794. K6T0908V2B Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  795. K6T0908V2B-B Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  796. K6T0908V2B-F Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  797. K6T0908V2B-TB10 Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  798. K6T0908V2B-TB85 Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  799. K6T0908V2B-TF10 Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  800. K6T0908V2B-TF85 Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  801. K6T0908V2B-YF10 Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  802. K6T0908V2B-YF85 Samsung - K6T0908V2B 64K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 64Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 10 ; Standby Current(uA) = 30 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  803. K6T1008C2C Samsung - 128K x8 bit Low Power CMOS Static RAM
  804. K6T1008C2C-B Samsung - 128K x8 bit Low Power CMOS Static RAM
  805. K6T1008C2C-DB55 Samsung - 128k X8 Bit Low Power Cmos Static Ram
  806. K6T1008C2C-DB70 Samsung - 128K x8 bit Low Power CMOS Static RAM
  807. K6T1008C2C-DL55 Samsung - 128K x8 bit Low Power CMOS Static RAM
  808. K6T1008C2C-DL70 Samsung - 128K x8 bit Low Power CMOS Static RAM
  809. K6T1008C2C-F Samsung - 128K x8 bit Low Power CMOS Static RAM
  810. K6T1008C2C-GB55 Samsung - 128K x8 bit Low Power CMOS Static RAM
  811. K6T1008C2C-GB70 Samsung - 128K x8 bit Low Power CMOS Static RAM
  812. K6T1008C2C-GF70 Samsung - 128K x8 bit Low Power CMOS Static RAM
  813. K6T1008C2C-GL55 Samsung - 128K x8 bit Low Power CMOS Static RAM
  814. K6T1008C2C-GL70 Samsung - 128K x8 bit Low Power CMOS Static RAM
  815. K6T1008C2C-GP70 Samsung - 128K x8 bit Low Power CMOS Static RAM
  816. K6T1008C2C-L Samsung - 128K x8 bit Low Power CMOS Static RAM
  817. K6T1008C2C-P Samsung - 128K x8 bit Low Power CMOS Static RAM
  818. K6T1008C2C-RB55 Samsung - 128K x8 bit Low Power CMOS Static RAM
  819. K6T1008C2C-RB70 Samsung - 128K x8 bit Low Power CMOS Static RAM
  820. K6T1008C2C-RF70 Samsung - 128K x8 bit Low Power CMOS Static RAM
  821. K6T1008C2C-TB55 Samsung - 128K x8 bit Low Power CMOS Static RAM
  822. K6T1008C2C-TB70 Samsung - 128K x8 bit Low Power CMOS Static RAM
  823. K6T1008C2C-TF70 Samsung - 128K x8 bit Low Power CMOS Static RAM
  824. K6T1008C2E Samsung - 128Kx8 bit Low Power CMOS Static RAM
  825. K6T1008C2E-B Samsung - 128Kx8 bit Low Power CMOS Static RAM
  826. K6T1008C2E-DB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  827. K6T1008C2E-DB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  828. K6T1008C2E-DL55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  829. K6T1008C2E-DL70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  830. K6T1008C2E-F Samsung - 128Kx8 bit Low Power CMOS Static RAM
  831. K6T1008C2E-GB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  832. K6T1008C2E-GB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  833. K6T1008C2E-GF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  834. K6T1008C2E-GF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  835. K6T1008C2E-GL55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  836. K6T1008C2E-GL70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  837. K6T1008C2E-GP55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  838. K6T1008C2E-GP70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  839. K6T1008C2E-L Samsung - 128Kx8 bit Low Power CMOS Static RAM
  840. K6T1008C2E-P Samsung - 128Kx8 bit Low Power CMOS Static RAM
  841. K6T1008C2E-RB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  842. K6T1008C2E-RB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  843. K6T1008C2E-RF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  844. K6T1008C2E-RF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  845. K6T1008C2E-TB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  846. K6T1008C2E-TB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  847. K6T1008C2E-TF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  848. K6T1008C2E-TF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  849. K6T1008S2E Samsung - K6T1008S2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1-0820,32TSOP1-0813.4F ; Production Status = Eol ; Comments = -
  850. K6T1008S2E-F Samsung - K6T1008S2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1-0820,32TSOP1-0813.4F ; Production Status = Eol ; Comments = -
  851. K6T1008S2E-P Samsung - K6T1008S2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1-0820,32TSOP1-0813.4F ; Production Status = Eol ; Comments = -
  852. K6T1008S2E-TF10 Samsung - K6T1008S2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1-0820,32TSOP1-0813.4F ; Production Status = Eol ; Comments = -
  853. K6T1008S2E-TF85 Samsung - K6T1008S2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1-0820,32TSOP1-0813.4F ; Production Status = Eol ; Comments = -
  854. K6T1008S2E-YF10 Samsung - K6T1008S2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1-0820,32TSOP1-0813.4F ; Production Status = Eol ; Comments = -
  855. K6T1008S2E-YF85 Samsung - K6T1008S2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1-0820,32TSOP1-0813.4F ; Production Status = Eol ; Comments = -
  856. K6T1008U2C Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  857. K6T1008U2C-B Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  858. K6T1008U2C-D Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  859. K6T1008U2C-F Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  860. K6T1008U2CFamily Samsung - K6T1008V2C 128K X 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,e,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Eol ; Comments = Converted Into K6T1008V2E
  861. K6T1008U2C-GB10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  862. K6T1008U2C-GB85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  863. K6T1008U2C-GD10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  864. K6T1008U2C-GD85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  865. K6T1008U2C-GF10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  866. K6T1008U2C-GF85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  867. K6T1008U2C-NB10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  868. K6T1008U2C-NB85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  869. K6T1008U2C-ND10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  870. K6T1008U2C-ND85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  871. K6T1008U2C-NF10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  872. K6T1008U2C-NF85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  873. K6T1008U2C-RB10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  874. K6T1008U2C-RB85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  875. K6T1008U2C-RD10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  876. K6T1008U2C-RD85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  877. K6T1008U2C-RF10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  878. K6T1008U2C-RF85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  879. K6T1008U2C-TB10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  880. K6T1008U2C-TB85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  881. K6T1008U2C-TD10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  882. K6T1008U2C-TD85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  883. K6T1008U2C-TF10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  884. K6T1008U2C-TF85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  885. K6T1008U2C-YB10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  886. K6T1008U2C-YB85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  887. K6T1008U2C-YD10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  888. K6T1008U2C-YD85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  889. K6T1008U2C-YF10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  890. K6T1008U2C-YF85 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  891. K6T1008U2E Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  892. K6T1008U2E-B Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  893. K6T1008U2E-F Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  894. K6T1008U2E-GB10 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  895. K6T1008U2E-GB70 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  896. K6T1008U2E-GF10 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  897. K6T1008U2E-GF70 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  898. K6T1008U2E-NB10 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  899. K6T1008U2E-NB70 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  900. K6T1008U2E-NF10 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  901. K6T1008U2E-NF70 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  902. K6T1008U2E-RB10 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  903. K6T1008U2E-RB70 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  904. K6T1008U2E-RF10 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  905. K6T1008U2E-RF70 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  906. K6T1008U2E-TB10 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  907. K6T1008U2E-TB70 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  908. K6T1008U2E-TF10 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  909. K6T1008U2E-TF70 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  910. K6T1008U2E-YB10 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  911. K6T1008U2E-YB70 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  912. K6T1008U2E-YF10 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  913. K6T1008U2E-YF70 Samsung - K6T1008U2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  914. K6T1008V2C Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  915. K6T1008V2C-B Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  916. K6T1008V2C-D Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  917. K6T1008V2C-F Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  918. K6T1008V2C-GB10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  919. K6T1008V2C-GB70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  920. K6T1008V2C-GD10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  921. K6T1008V2C-GD70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  922. K6T1008V2C-GF10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  923. K6T1008V2C-GF70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  924. K6T1008V2C-NB10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  925. K6T1008V2C-NB70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  926. K6T1008V2C-ND10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  927. K6T1008V2C-ND70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  928. K6T1008V2C-NF10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  929. K6T1008V2C-NF70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  930. K6T1008V2C-RB10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  931. K6T1008V2C-RB70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  932. K6T1008V2C-RD10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  933. K6T1008V2C-RD70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  934. K6T1008V2C-RF10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  935. K6T1008V2C-RF70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  936. K6T1008V2C-TB10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  937. K6T1008V2C-TB70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  938. K6T1008V2C-TD10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  939. K6T1008V2C-TD70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  940. K6T1008V2C-TF10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  941. K6T1008V2C-TF70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  942. K6T1008V2C-YB10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  943. K6T1008V2C-YB70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  944. K6T1008V2C-YD10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  945. K6T1008V2C-YD70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  946. K6T1008V2C-YF10 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  947. K6T1008V2C-YF70 Samsung - 128K x8 bit Low Power and Low Voltage CMOS Static RAM
  948. K6T1008V2E Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  949. K6T1008V2E-B Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  950. K6T1008V2E-F Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  951. K6T1008V2E-GB10 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  952. K6T1008V2E-GB70 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  953. K6T1008V2E-GF10 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  954. K6T1008V2E-GF70 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  955. K6T1008V2E-NB10 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  956. K6T1008V2E-NB70 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  957. K6T1008V2E-NF10 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  958. K6T1008V2E-NF70 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  959. K6T1008V2E-RB10 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  960. K6T1008V2E-RB70 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  961. K6T1008V2E-RF10 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  962. K6T1008V2E-RF70 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  963. K6T1008V2E-TB10 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  964. K6T1008V2E-TB70 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  965. K6T1008V2E-TF10 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  966. K6T1008V2E-TF70 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  967. K6T1008V2E-YB10 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  968. K6T1008V2E-YB55 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  969. K6T1008V2E-YB70 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  970. K6T1008V2E-YF10 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  971. K6T1008V2E-YF55 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  972. K6T1008V2E-YF70 Samsung - K6T1008V2E 128K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 10 ; Package = 32SOP,32TSOP1 ; Production Status = Mass Production BY July ; Comments = K6X1008T2D Recommended
  973. K6T2008S2A Samsung - K6T2008S2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1,48(36)-FBGA ; Production Status = Eol ; Comments = -
  974. K6T2008S2A-F Samsung - K6T2008S2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1,48(36)-FBGA ; Production Status = Eol ; Comments = -
  975. K6T2008S2A-FF10 Samsung - K6T2008S2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1,48(36)-FBGA ; Production Status = Eol ; Comments = -
  976. K6T2008S2A-FF85 Samsung - K6T2008S2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1,48(36)-FBGA ; Production Status = Eol ; Comments = -
  977. K6T2008S2A-YF10 Samsung - K6T2008S2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1,48(36)-FBGA ; Production Status = Eol ; Comments = -
  978. K6T2008S2A-YF85 Samsung - K6T2008S2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 15 ; Standby Current(uA) = 10 ; Package = 32TSOP1,48(36)-FBGA ; Production Status = Eol ; Comments = -
  979. K6T2008S2M Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  980. K6T2008S2M-B Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  981. K6T2008S2M-F Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  982. K6T2008S2M-L Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  983. K6T2008S2M-P Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  984. K6T2008S2M-TB12 Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  985. K6T2008S2M-TB15 Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  986. K6T2008S2M-TF12 Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  987. K6T2008S2M-TF15 Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  988. K6T2008S2M-YB12 Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  989. K6T2008S2M-YB15 Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  990. K6T2008S2M-YF12 Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  991. K6T2008S2M-YF15 Samsung - K6T2008S2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.3~3.3 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = C,i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  992. K6T2008U2A Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  993. K6T2008U2A-B Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  994. K6T2008U2A-F Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  995. K6T2008U2A-FF70 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  996. K6T2008U2A-FF85 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  997. K6T2008U2A-TB10 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  998. K6T2008U2A-TB70 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  999. K6T2008U2A-TB85 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1000. K6T2008U2A-TF10 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1001. K6T2008U2A-TF70 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1002. K6T2008U2A-TF85 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1003. K6T2008U2A-YB10 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1004. K6T2008U2A-YB70 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1005. K6T2008U2A-YB85 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1006. K6T2008U2A-YF10 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1007. K6T2008U2A-YF70 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1008. K6T2008U2A-YF85 Samsung - K6T2008U2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1009. K6T2008U2M Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1010. K6T2008U2M-B Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1011. K6T2008U2M-F Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1012. K6T2008U2M-TB10 Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1013. K6T2008U2M-TB85 Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1014. K6T2008U2M-TF10 Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1015. K6T2008U2M-TF85 Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1016. K6T2008U2M-YB10 Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1017. K6T2008U2M-YB85 Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1018. K6T2008U2M-YF10 Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1019. K6T2008U2M-YF85 Samsung - K6T2008U2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1020. K6T2008V2A Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1021. K6T2008V2A-B Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1022. K6T2008V2A-F Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1023. K6T2008V2A-FF70 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1024. K6T2008V2A-FF85 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1025. K6T2008V2A-TB70 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1026. K6T2008V2A-TB85 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1027. K6T2008V2A-TF10 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1028. K6T2008V2A-TF70 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1029. K6T2008V2A-TF85 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1030. K6T2008V2A-YB70 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1031. K6T2008V2A-YB85 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1032. K6T2008V2A-YF10 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1033. K6T2008V2A-YF70 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1034. K6T2008V2A-YF85 Samsung - K6T2008V2A 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 15 ; Package = 32TSOP1,32sTSOP1,48FBGA ; Production Status = Eol ; Comments = -
  1035. K6T2008V2M Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1036. K6T2008V2M-B Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1037. K6T2008V2M-F Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1038. K6T2008V2M-TB70 Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1039. K6T2008V2M-TB85 Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1040. K6T2008V2M-TF10 Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1041. K6T2008V2M-TF85 Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1042. K6T2008V2M-YB70 Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1043. K6T2008V2M-YB85 Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1044. K6T2008V2M-YF10 Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1045. K6T2008V2M-YF85 Samsung - K6T2008V2M 256K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 15 ; Package = 32TSOP1 ; Production Status = Eol ; Comments = -
  1046. K6T2016S3M Samsung - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1047. K6T2016S3M-B Samsung - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1048. K6T2016S3M-F Samsung - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1049. K6T2016S3M-L Samsung - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1050. K6T2016S3M-P Samsung - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1051. K6T2016S3M-TB12 Samsung - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1052. K6T2016S3M-TB15 Samsung - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1053. K6T2016S3M-TF12 Samsung - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1054. K6T2016S3M-TF15 Samsung - K6T2016S3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Mx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 120,150 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1055. K6T2016U3M Samsung - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1056. K6T2016U3M-B Samsung - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1057. K6T2016U3M-F Samsung - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1058. K6T2016U3M-L Samsung - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1059. K6T2016U3M-P Samsung - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1060. K6T2016U3M-TB10 Samsung - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1061. K6T2016U3M-TB85 Samsung - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1062. K6T2016U3M-TF10 Samsung - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1063. K6T2016U3M-TF85 Samsung - K6T2016U3M 128K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 128Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 55 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1064. K6T4008C Samsung - 512kx8 Bit Low Power Cmos Static Ram
  1065. K6T4008C Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1066. K6T4008C1B Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1067. K6T4008C1B-B Samsung - 512kx8 Bit Low Power Cmos Static Ram
  1068. K6T4008C1B-DB55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1069. K6T4008C1B-DB70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1070. K6T4008C1B-DL55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1071. K6T4008C1B-DL70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1072. K6T4008C1B-F Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1073. K6T4008C1B-GB55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1074. K6T4008C1B-GB70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1075. K6T4008C1B-GF55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1076. K6T4008C1B-GF70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1077. K6T4008C1B-GL55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1078. K6T4008C1B-GL70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1079. K6T4008C1B-GP55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1080. K6T4008C1B-GP70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1081. K6T4008C1B-L Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1082. K6T4008C1B-MB55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1083. K6T4008C1B-MB70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1084. K6T4008C1B-MF55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1085. K6T4008C1B-MF70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1086. K6T4008C1B-P Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1087. K6T4008C1B-VB55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1088. K6T4008C1B-VB70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1089. K6T4008C1B-VF55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1090. K6T4008C1B-VF70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1091. K6T4008C1C Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1092. K6T4008C1C-B Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1093. K6T4008C1C-DB55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1094. K6T4008C1C-DB70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1095. K6T4008C1C-DL55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1096. K6T4008C1C-DL70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1097. K6T4008C1C-F Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1098. K6T4008C1C-GB55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1099. K6T4008C1C-GB70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1100. K6T4008C1C-GF55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1101. K6T4008C1C-GF70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1102. K6T4008C1C-GL55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1103. K6T4008C1C-GL70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1104. K6T4008C1C-GP55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1105. K6T4008C1C-GP70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1106. K6T4008C1C-L Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1107. K6T4008C1C-MB55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1108. K6T4008C1C-MB70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1109. K6T4008C1C-MF55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1110. K6T4008C1C-MF70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1111. K6T4008C1C-P Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1112. K6T4008C1C-VB55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1113. K6T4008C1C-VB70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1114. K6T4008C1C-VF55 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1115. K6T4008C1C-VF70 Samsung - 512Kx8 bit Low Power CMOS Static RAM
  1116. K6T4008S1C Samsung - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
  1117. K6T4008S1C-F Samsung - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
  1118. K6T4008S1C-MF10 Samsung - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
  1119. K6T4008S1C-MF12 Samsung - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
  1120. K6T4008S1C-TF10 Samsung - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
  1121. K6T4008S1C-TF12 Samsung - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
  1122. K6T4008S1C-VF10 Samsung - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
  1123. K6T4008S1C-VF12 Samsung - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
  1124. K6T4008S1C-YF10 Samsung - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
  1125. K6T4008S1C-YF12 Samsung - K6T4008S1C 512Kx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 16 ; Standby Current(uA) = 15 ; Package = 32TSOP2,32TSOP1 ; Production Status = Eol ; Comments = -
  1126. K6T4008U1B Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1127. K6T4008U1B-B Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1128. K6T4008U1B-F Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1129. K6T4008U1B-GB10 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1130. K6T4008U1B-GB85 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1131. K6T4008U1B-GF10 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1132. K6T4008U1B-GF85 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1133. K6T4008U1B-MB10 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1134. K6T4008U1B-MB85 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1135. K6T4008U1B-MF10 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1136. K6T4008U1B-MF85 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1137. K6T4008U1B-VB10 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1138. K6T4008U1B-VB85 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1139. K6T4008U1B-VF10 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1140. K6T4008U1B-VF85 Samsung - K6T4008U1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1141. K6T4008U1C Samsung - K6T4008U1C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 100 ; Operating Temperature = C,i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Mass Production BY July ; Comments = K6X4008T1F Recommended
  1142. K6T4008U1C-B Samsung - 512kx8 Bit Low Power and Low Voltage Cmos Static Ram
  1143. K6T4008U1C-F Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1144. K6T4008U1C-GB10 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1145. K6T4008U1C-GB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1146. K6T4008U1C-GB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1147. K6T4008U1C-GF10 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1148. K6T4008U1C-GF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1149. K6T4008U1C-GF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1150. K6T4008U1C-MB10 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1151. K6T4008U1C-MB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1152. K6T4008U1C-MB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1153. K6T4008U1C-MF10 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1154. K6T4008U1C-MF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1155. K6T4008U1C-MF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1156. K6T4008U1C-TB10 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1157. K6T4008U1C-TB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1158. K6T4008U1C-TB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1159. K6T4008U1C-TF10 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1160. K6T4008U1C-TF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1161. K6T4008U1C-TF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1162. K6T4008U1C-VB10 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1163. K6T4008U1C-VB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1164. K6T4008U1C-VB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1165. K6T4008U1C-VF10 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1166. K6T4008U1C-VF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1167. K6T4008U1C-VF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1168. K6T4008U1C-YB10 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1169. K6T4008U1C-YB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1170. K6T4008U1C-YB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1171. K6T4008U1C-YF10 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1172. K6T4008U1C-YF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1173. K6T4008U1C-YF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1174. K6T4008U2C Samsung - K6T4008U2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = Converted Into K6F4008U2E
  1175. K6T4008U2C-F Samsung - K6T4008U2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = Converted Into K6F4008U2E
  1176. K6T4008U2C-ZF10 Samsung - K6T4008U2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = Converted Into K6F4008U2E
  1177. K6T4008U2C-ZF70 Samsung - K6T4008U2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = Converted Into K6F4008U2E
  1178. K6T4008U2C-ZF85 Samsung - K6T4008U2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = Converted Into K6F4008U2E
  1179. K6T4008V1B Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1180. K6T4008V1B-B Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1181. K6T4008V1B-F Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1182. K6T4008V1B-GB10 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1183. K6T4008V1B-GB70 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1184. K6T4008V1B-GB80 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1185. K6T4008V1B-GF10 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1186. K6T4008V1B-GF70 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1187. K6T4008V1B-GF85 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1188. K6T4008V1B-MB10 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1189. K6T4008V1B-MB70 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1190. K6T4008V1B-MB85 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1191. K6T4008V1B-MF10 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1192. K6T4008V1B-MF70 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1193. K6T4008V1B-MF85 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1194. K6T4008V1B-VB10 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1195. K6T4008V1B-VB70 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1196. K6T4008V1B-VB85 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1197. K6T4008V1B-VF10 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1198. K6T4008V1B-VF70 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1199. K6T4008V1B-VF85 Samsung - K6T4008V1B 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 32SOP,32TSOP2 ; Production Status = Eol ; Comments = -
  1200. K6T4008V1C Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1201. K6T4008V1C-B Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1202. K6T4008V1C-F Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1203. K6T4008V1C-GB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1204. K6T4008V1C-GB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1205. K6T4008V1C-GF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1206. K6T4008V1C-GF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1207. K6T4008V1C-MB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1208. K6T4008V1C-MB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1209. K6T4008V1C-MF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1210. K6T4008V1C-MF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1211. K6T4008V1C-TB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1212. K6T4008V1C-TB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1213. K6T4008V1C-TF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1214. K6T4008V1C-TF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1215. K6T4008V1C-VB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1216. K6T4008V1C-VB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1217. K6T4008V1C-VF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1218. K6T4008V1C-VF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1219. K6T4008V1C-YB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1220. K6T4008V1C-YB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1221. K6T4008V1C-YF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1222. K6T4008V1C-YF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1223. K6T4008V2C Samsung - K6T4008V2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = -
  1224. K6T4008V2C-F Samsung - K6T4008V2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = -
  1225. K6T4008V2C-ZF70 Samsung - K6T4008V2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = -
  1226. K6T4008V2C-ZF85 Samsung - K6T4008V2C 512K X 8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = i ; Operating Current(mA) = 30 ; Standby Current(uA) = 20 ; Package = 36CSP,48CSP ; Production Status = Eol ; Comments = -
  1227. K6T4016C3B Samsung - 256Kx16 bit Low Power CMOS Static RAM
  1228. K6T4016C3B-B Samsung - 256Kx16 bit Low Power CMOS Static RAM
  1229. K6T4016C3B-F Samsung - 256kx16 Bit Low Power Cmos Static Ram
  1230. K6T4016C3B-RB55 Samsung - 256Kx16 bit Low Power CMOS Static RAM
  1231. K6T4016C3B-RB70 Samsung - 256Kx16 bit Low Power CMOS Static RAM
  1232. K6T4016C3B-RF10 Samsung - 256Kx16 bit Low Power CMOS Static RAM
  1233. K6T4016C3B-RF55 Samsung - 256Kx16 bit Low Power CMOS Static RAM
  1234. K6T4016C3B-RF70 Samsung - 256Kx16 bit Low Power CMOS Static RAM
  1235. K6T4016C3B-TB55 Samsung - 256Kx16 bit Low Power CMOS Static RAM
  1236. K6T4016C3B-TB70 Samsung - 256Kx16 bit Low Power CMOS Static RAM
  1237. K6T4016C3B-TF10 Samsung - 256Kx16 bit Low Power CMOS Static RAM
  1238. K6T4016C3B-TF55 Samsung - 256Kx16 bit Low Power CMOS Static RAM
  1239. K6T4016C3B-TF70 Samsung - 256Kx16 bit Low Power CMOS Static RAM
  1240. K6T4016C3C Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  1241. K6T4016C3C-B Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  1242. K6T4016C3C-F Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  1243. K6T4016C3C-RB55 Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  1244. K6T4016C3C-RB70 Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  1245. K6T4016C3C-RF55 Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  1246. K6T4016C3C-RF70 Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  1247. K6T4016C3C-TB55 Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  1248. K6T4016C3C-TB70 Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  1249. K6T4016C3C-TF55 Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  1250. K6T4016C3C-TF70 Samsung - K6T4016C3C 256K X 16 Bit Low Power CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 90 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = K6X4016C3F Recommended
  1251. K6T4016S3C Samsung - K6T4016S3C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1252. K6T4016S3C-F Samsung - K6T4016S3C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1253. K6T4016S3C-RF10 Samsung - K6T4016S3C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1254. K6T4016S3C-RF12 Samsung - K6T4016S3C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1255. K6T4016S3C-TF10 Samsung - K6T4016S3C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1256. K6T4016S3C-TF12 Samsung - K6T4016S3C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1257. K6T4016S6C Samsung - K6T4016S6C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  1258. K6T4016S6C-F Samsung - K6T4016S6C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  1259. K6T4016S6C-ZF10 Samsung - K6T4016S6C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  1260. K6T4016S6C-ZF12 Samsung - K6T4016S6C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.3~2.7 ; Speed-tAA(ns) = 100,120 ; Operating Temperature = i ; Operating Current(mA) = 25 ; Standby Current(uA) = 15 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  1261. K6T4016U3B Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1262. K6T4016U3B-B Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1263. K6T4016U3B-F Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1264. K6T4016U3B-RB10 Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1265. K6T4016U3B-RB85 Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1266. K6T4016U3B-RF10 Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1267. K6T4016U3B-RF85 Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1268. K6T4016U3B-TB10 Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1269. K6T4016U3B-TB85 Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1270. K6T4016U3B-TF10 Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1271. K6T4016U3B-TF85 Samsung - K6T4016U3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 85,100 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1272. K6T4016U3C Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1273. K6T4016U3C-B Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1274. K6T4016U3C-F Samsung - 256kx16 Bit Low Power and Low Voltage Cmos Static Ram
  1275. K6T4016U3C-RB10 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1276. K6T4016U3C-RB70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1277. K6T4016U3C-RB85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1278. K6T4016U3C-RF10 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1279. K6T4016U3C-RF70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1280. K6T4016U3C-RF85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1281. K6T4016U3C-TB10 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1282. K6T4016U3C-TB70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1283. K6T4016U3C-TB85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1284. K6T4016U3C-TF10 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1285. K6T4016U3C-TF70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1286. K6T4016U3C-TF85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1287. K6T4016U4C Samsung - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  1288. K6T4016U4C-F Samsung - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  1289. K6T4016U4C-ZF10 Samsung - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  1290. K6T4016U4C-ZF70 Samsung - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  1291. K6T4016U4C-ZF85 Samsung - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  1292. K6T4016U6C Samsung - K6T4016U6C 256Kx16 Bit Low Power and Low Voltage CMOS Staticram ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  1293. K6T4016U6C-F Samsung - K6T4016U6C 256Kx16 Bit Low Power and Low Voltage CMOS Staticram ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  1294. K6T4016U6C-ZF10 Samsung - K6T4016U6C 256Kx16 Bit Low Power and Low Voltage CMOS Staticram ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  1295. K6T4016U6C-ZF70 Samsung - K6T4016U6C 256Kx16 Bit Low Power and Low Voltage CMOS Staticram ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  1296. K6T4016U6C-ZF85 Samsung - K6T4016U6C 256Kx16 Bit Low Power and Low Voltage CMOS Staticram ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  1297. K6T4016V3B Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1298. K6T4016V3B-B Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1299. K6T4016V3B-F Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1300. K6T4016V3B-RB70 Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1301. K6T4016V3B-RB85 Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1302. K6T4016V3B-RF10 Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1303. K6T4016V3B-RF85 Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1304. K6T4016V3B-TB70 Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1305. K6T4016V3B-TB85 Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1306. K6T4016V3B-TF10 Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1307. K6T4016V3B-TF85 Samsung - K6T4016V3B 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 3.0~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 20 ; Package = 44TSOP2 ; Production Status = Eol ; Comments = -
  1308. K6T4016V3C Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1309. K6T4016V3C-B Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1310. K6T4016V3C-F Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1311. K6T4016V3C-RB10 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1312. K6T4016V3C-RB70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1313. K6T4016V3C-RB85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1314. K6T4016V3C-RF10 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1315. K6T4016V3C-RF70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1316. K6T4016V3C-RF85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1317. K6T4016V3C-TB10 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1318. K6T4016V3C-TB55 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1319. K6T4016V3C-TB70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1320. K6T4016V3C-TB85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1321. K6T4016V3C-TF10 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1322. K6T4016V3C-TF70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1323. K6T4016V3C-TF85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1324. K6T4016V4C Samsung - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  1325. K6T4016V4C-F Samsung - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  1326. K6T4016V4C-ZF10 Samsung - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  1327. K6T4016V4C-ZF70 Samsung - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  1328. K6T4016V4C-ZF85 Samsung - K6T4016V4C 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.3 ; Speed-tAA(ns) = 70,85,100 ; Operating Temperature = i ; Operating Current(mA) = 45 ; Standby Current(uA) = 20 ; Package = 48CSP ; Production Status = Eol ; Comments = -
  1329. K6T8008C2M Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  1330. K6T8008C2M-B Samsung - 1mx8 Bit Low Power and Low Voltage Cmos Static Ram
  1331. K6T8008C2M-F Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  1332. K6T8008C2M-RB55 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  1333. K6T8008C2M-RB70 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  1334. K6T8008C2M-RF55 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  1335. K6T8008C2M-RF70 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  1336. K6T8008C2M-TB55 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  1337. K6T8008C2M-TB70 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  1338. K6T8008C2M-TF55 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  1339. K6T8008C2M-TF70 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  1340. K6T8016C3M Samsung - 512Kx16 bit Low Power CMOS Static RAM
  1341. K6T8016C3M-B Samsung - 512Kx16 bit Low Power CMOS Static RAM
  1342. K6T8016C3M-F Samsung - 512kx16 Bit Low Power Cmos Static Ram
  1343. K6T8016C3M-RB55 Samsung - 512Kx16 bit Low Power CMOS Static RAM
  1344. K6T8016C3M-RB70 Samsung - 512Kx16 bit Low Power CMOS Static RAM
  1345. K6T8016C3M-RF55 Samsung - 512Kx16 bit Low Power CMOS Static RAM
  1346. K6T8016C3M-RF70 Samsung - 512Kx16 bit Low Power CMOS Static RAM
  1347. K6T8016C3M-TB55 Samsung - 512Kx16 bit Low Power CMOS Static RAM
  1348. K6T8016C3M-TB70 Samsung - 512Kx16 bit Low Power CMOS Static RAM
  1349. K6T8016C3M-TF55 Samsung - 512Kx16 bit Low Power CMOS Static RAM
  1350. K6T8016C3M-TF70 Samsung - 512Kx16 bit Low Power CMOS Static RAM
  1351. K6X0808C1D Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1352. K6X0808C1D-DF55 Samsung - 32kx8 Bit Low Power Cmos Static Ram
  1353. K6X0808C1D-DF70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1354. K6X0808C1D-F Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1355. K6X0808C1D-GF55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1356. K6X0808C1D-GF70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1357. K6X0808C1D-GQ55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1358. K6X0808C1D-GQ70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1359. K6X0808C1D-Q Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1360. K6X0808C1D-RF55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1361. K6X0808C1D-RF70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1362. K6X0808C1D-TF55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1363. K6X0808C1D-TF70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1364. K6X0808C1D-TQ55 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1365. K6X0808C1D-TQ70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1366. K6X0808T1D Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1367. K6X0808T1D-B Samsung - 32kx8 Bit Low Power Cmos Static Ram
  1368. K6X0808T1D-F Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1369. K6X0808T1D-GB70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1370. K6X0808T1D-GB85 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1371. K6X0808T1D-GF70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1372. K6X0808T1D-GF85 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1373. K6X0808T1D-GQ70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1374. K6X0808T1D-GQ85 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1375. K6X0808T1D-NB70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1376. K6X0808T1D-NB85 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1377. K6X0808T1D-NF70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1378. K6X0808T1D-NF85 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1379. K6X0808T1D-Q Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1380. K6X0808T1D-YB70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1381. K6X0808T1D-YB85 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1382. K6X0808T1D-YF70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1383. K6X0808T1D-YF85 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1384. K6X0808T1D-YQ70 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1385. K6X0808T1D-YQ85 Samsung - 32Kx8 bit Low Power CMOS Static RAM
  1386. K6X1008C2D Samsung - 128kx8 Bit Low Power Cmos Static Ram
  1387. K6X1008C2D-B Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1388. K6X1008C2D-BB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1389. K6X1008C2D-BB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1390. K6X1008C2D-BF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1391. K6X1008C2D-BF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1392. K6X1008C2D-DB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1393. K6X1008C2D-DB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1394. K6X1008C2D-DF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1395. K6X1008C2D-DF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1396. K6X1008C2D-F Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1397. K6X1008C2D-GB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1398. K6X1008C2D-GB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1399. K6X1008C2D-GF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1400. K6X1008C2D-GF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1401. K6X1008C2D-GQ55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1402. K6X1008C2D-GQ70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1403. K6X1008C2D-PB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1404. K6X1008C2D-PB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1405. K6X1008C2D-PF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1406. K6X1008C2D-PF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1407. K6X1008C2D-Q Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1408. K6X1008C2D-TB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1409. K6X1008C2D-TB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1410. K6X1008C2D-TF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1411. K6X1008C2D-TF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1412. K6X1008C2D-TQ55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1413. K6X1008C2D-TQ70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1414. K6X1008T2D Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1415. K6X1008T2D-B Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1416. K6X1008T2D-BB551 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1417. K6X1008T2D-BB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1418. K6X1008T2D-BB85 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1419. K6X1008T2D-BF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1420. K6X1008T2D-BF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1421. K6X1008T2D-BF85 Samsung - 128kx8 Bit Low Power Cmos Static Ram
  1422. K6X1008T2D-F Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1423. K6X1008T2D-GB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1424. K6X1008T2D-GB551 Samsung - K6X1008T2D 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 25 ; Standby Current(uA) = 10,20 ; Package = 32DIP,32SOP,32TSOP1 ; Production Status = Mass Production ; Comments = D-die
  1425. K6X1008T2D-GB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1426. K6X1008T2D-GB85 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1427. K6X1008T2D-GF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1428. K6X1008T2D-GF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1429. K6X1008T2D-GF85 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1430. K6X1008T2D-GQ70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1431. K6X1008T2D-GQ85 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1432. K6X1008T2D-PB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1433. K6X1008T2D-PB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1434. K6X1008T2D-PB85 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1435. K6X1008T2D-PF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1436. K6X1008T2D-PF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1437. K6X1008T2D-PF85 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1438. K6X1008T2D-Q Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1439. K6X1008T2D-TB55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1440. K6X1008T2D-TB551 Samsung - K6X1008T2D 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 25 ; Standby Current(uA) = 10,20 ; Package = 32DIP,32SOP,32TSOP1 ; Production Status = Mass Production ; Comments = D-die
  1441. K6X1008T2D-TB70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1442. K6X1008T2D-TB85 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1443. K6X1008T2D-TF55 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1444. K6X1008T2D-TF551 Samsung - K6X1008T2D 128K X 8 Bit Super Low Power and Low Voltage Full CMOS Static RAM ; Organization = 128Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 25 ; Standby Current(uA) = 10,20 ; Package = 32DIP,32SOP,32TSOP1 ; Production Status = Mass Production ; Comments = D-die
  1445. K6X1008T2D-TF70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1446. K6X1008T2D-TF85 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1447. K6X1008T2D-TQ70 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1448. K6X1008T2D-TQ85 Samsung - 128Kx8 bit Low Power CMOS Static RAM
  1449. K6X4008C1F Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1450. K6X4008C1F-B Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1451. K6X4008C1F-BB55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1452. K6X4008C1F-BB70 Samsung - 512kx8 Bit Low Power Full Cmos Static Ram
  1453. K6X4008C1F-BF55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1454. K6X4008C1F-BF70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1455. K6X4008C1F-DB55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1456. K6X4008C1F-DB70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1457. K6X4008C1F-DF55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1458. K6X4008C1F-DF70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1459. K6X4008C1F-F Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1460. K6X4008C1F-GB55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1461. K6X4008C1F-GB70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1462. K6X4008C1F-GF55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1463. K6X4008C1F-GF70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1464. K6X4008C1F-GQ55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1465. K6X4008C1F-GQ70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1466. K6X4008C1F-MB55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1467. K6X4008C1F-MB70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1468. K6X4008C1F-MF55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1469. K6X4008C1F-MF70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1470. K6X4008C1F-Q Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1471. K6X4008C1F-VB55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1472. K6X4008C1F-VB70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1473. K6X4008C1F-VF55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1474. K6X4008C1F-VF70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1475. K6X4008C1F-VQ55 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1476. K6X4008C1F-VQ70 Samsung - 512Kx8 bit Low Power full CMOS Static RAM
  1477. K6X4008T1F Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1478. K6X4008T1F-B Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1479. K6X4008T1F-F Samsung - 512kx8 Bit Low Power and Low Voltage Cmos Static Ram
  1480. K6X4008T1F-GB55 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1481. K6X4008T1F-GB551 Samsung - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
  1482. K6X4008T1F-GB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1483. K6X4008T1F-GB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1484. K6X4008T1F-GF55 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1485. K6X4008T1F-GF551 Samsung - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
  1486. K6X4008T1F-GF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1487. K6X4008T1F-GF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1488. K6X4008T1F-GQ70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1489. K6X4008T1F-GQ85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1490. K6X4008T1F-MB55 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1491. K6X4008T1F-MB551 Samsung - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
  1492. K6X4008T1F-MB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1493. K6X4008T1F-MB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1494. K6X4008T1F-MF55 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1495. K6X4008T1F-MF551 Samsung - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
  1496. K6X4008T1F-MF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1497. K6X4008T1F-MF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1498. K6X4008T1F-Q Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1499. K6X4008T1F-VB55 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1500. K6X4008T1F-VB551 Samsung - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
  1501. K6X4008T1F-VB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1502. K6X4008T1F-VB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1503. K6X4008T1F-VF55 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1504. K6X4008T1F-VF551 Samsung - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
  1505. K6X4008T1F-VF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1506. K6X4008T1F-VF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1507. K6X4008T1F-VQ70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1508. K6X4008T1F-VQ85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1509. K6X4008T1F-YB55 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1510. K6X4008T1F-YB551 Samsung - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
  1511. K6X4008T1F-YB70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1512. K6X4008T1F-YB85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1513. K6X4008T1F-YF55 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1514. K6X4008T1F-YF551 Samsung - K6X4008T1F 512KB 8bit Low Power and Low Voltage CMOS Static RAM ; Organization = 512Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 30 ; Standby Current(uA) = 20,30 ; Package = 32SOP,32TSOP1,32TSOP2 ; Production Status = Mass Product ; Comments = Product
  1515. K6X4008T1F-YF70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1516. K6X4008T1F-YF85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1517. K6X4008T1F-YQ70 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1518. K6X4008T1F-YQ85 Samsung - 512Kx8 bit Low Power and Low Voltage CMOS Static RAM
  1519. K6X4016C3F Samsung - 256kx16 Bit Low Power Full Cmos Static Ram
  1520. K6X4016C3F-B Samsung - 256Kx16 bit Low Power full CMOS Static RAM
  1521. K6X4016C3F-F Samsung - 256Kx16 bit Low Power full CMOS Static RAM
  1522. K6X4016C3F-Q Samsung - 256Kx16 bit Low Power full CMOS Static RAM
  1523. K6X4016C3F-TB55 Samsung - 256Kx16 bit Low Power full CMOS Static RAM
  1524. K6X4016C3F-TB70 Samsung - 256Kx16 bit Low Power full CMOS Static RAM
  1525. K6X4016C3F-TF55 Samsung - 256Kx16 bit Low Power full CMOS Static RAM
  1526. K6X4016C3F-TF70 Samsung - 256Kx16 bit Low Power full CMOS Static RAM
  1527. K6X4016C3F-TQ55 Samsung - 256Kx16 bit Low Power full CMOS Static RAM
  1528. K6X4016C3F-TQ70 Samsung - 256Kx16 bit Low Power full CMOS Static RAM
  1529. K6X4016T3F Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1530. K6X4016T3F-B Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1531. K6X4016T3F-F Samsung - 256kx16 Bit Low Power and Low Voltage Cmos Static Ram
  1532. K6X4016T3F-Q Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1533. K6X4016T3F-TB55 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1534. K6X4016T3F-TB551 Samsung - K6X4016T3F 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 40 ; Standby Current(uA) = 20,30 ; Package = 44TSOP2 ; Production Status = Mass Product ; Comments = Product
  1535. K6X4016T3F-TB70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1536. K6X4016T3F-TB85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1537. K6X4016T3F-TF55 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1538. K6X4016T3F-TF551 Samsung - K6X4016T3F 256K X 16 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 256Kx16 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 70,85 ; Operating Temperature = I,a ; Operating Current(mA) = 40 ; Standby Current(uA) = 20,30 ; Package = 44TSOP2 ; Production Status = Mass Product ; Comments = Product
  1539. K6X4016T3F-TF70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1540. K6X4016T3F-TF85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1541. K6X4016T3F-TQ70 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1542. K6X4016T3F-TQ85 Samsung - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM
  1543. K6X8008C2B Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  1544. K6X8008C2B-B Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  1545. K6X8008C2B-F Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  1546. K6X8008C2B-Q Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  1547. K6X8008C2B-TB55 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  1548. K6X8008C2B-TB70 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  1549. K6X8008C2B-TF55 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  1550. K6X8008C2B-TF70 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  1551. K6X8008C2B-TQ55 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  1552. K6X8008C2B-TQ70 Samsung - 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
  1553. K6X8008T2B Samsung - CMOS SRAM
  1554. K6X8008T2B-F Samsung - CMOS SRAM
  1555. K6X8008T2B-Q Samsung - CMOS SRAM
  1556. K6X8008T2B-TF551 Samsung - K6X8008T2B 1Mx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 1024Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 40 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  1557. K6X8008T2B-TF70 Samsung - K6X8008T2B 1Mx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 1024Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 40 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  1558. K6X8008T2B-TQ70 Samsung - K6X8008T2B 1Mx8 Bit Low Power and Low Voltage CMOS Static RAM ; Organization = 1024Kx8 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 40 ; Standby Current(uA) = 40 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  1559. K6X8016C3B Samsung - 512Kx16 bit Low Power Full CMOS Static RAM
  1560. K6X8016C3B-B Samsung - K6X8016C3B 512Kx16 Bit Low Power Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  1561. K6X8016C3B-F Samsung - K6X8016C3B 512Kx16 Bit Low Power Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  1562. K6X8016C3B-Q Samsung - K6X8016C3B 512Kx16 Bit Low Power Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  1563. K6X8016C3B-TB55 Samsung - K6X8016C3B 512Kx16 Bit Low Power Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  1564. K6X8016C3B-TB70 Samsung - K6X8016C3B 512Kx16 Bit Low Power Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  1565. K6X8016C3B-TF55 Samsung - K6X8016C3B 512Kx16 Bit Low Power Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  1566. K6X8016C3B-TF70 Samsung - K6X8016C3B 512Kx16 Bit Low Power Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  1567. K6X8016C3B-TQ55 Samsung - K6X8016C3B 512Kx16 Bit Low Power Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  1568. K6X8016C3B-TQ70 Samsung - K6X8016C3B 512Kx16 Bit Low Power Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 4.5~5.5 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 60 ; Standby Current(uA) = 50 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  1569. K6X8016T3B Samsung - 512Kx16 bit Low Power Full CMOS Static RAM
  1570. K6X8016T3B-F Samsung - 512Kx16 bit Low Power Full CMOS Static RAM
  1571. K6X8016T3B-Q Samsung - 512Kx16 bit Low Power Full CMOS Static RAM
  1572. K6X8016T3B-TF55 Samsung - 512kx16 Bit Low Power Full Cmos Static Ram
  1573. K6X8016T3B-TF551 Samsung - K6X8016T3B 512Kx16 Bit Low Power Full CMOS Static RAM ; Organization = 512Kx16 ; Vcc(V) = 2.7~3.6 ; Speed-tAA(ns) = 55,70 ; Operating Temperature = C,i ; Operating Current(mA) = 45 ; Standby Current(uA) = 40 ; Package = 44TSOP2 ; Production Status = Mass Production ; Comments = Product
  1574. K6X8016T3B-TF70 Samsung - 512Kx16 bit Low Power Full CMOS Static RAM
  1575. K6X8016T3B-TQ70 Samsung - 512Kx16 bit Low Power Full CMOS Static RAM
  1576. K7A161800A Samsung - 512kx36 & 1mx18 Synchronous Sram
  1577. K7A161800A-FC14 Samsung - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1578. K7A161800A-FC16 Samsung - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1579. K7A161800A-FC20 Samsung - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1580. K7A161800A-FC22 Samsung - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1581. K7A161800A-FC25 Samsung - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1582. K7A161800A-FI14 Samsung - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1583. K7A161800A-FI16 Samsung - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1584. K7A161800A-FI20 Samsung - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1585. K7A161800A-FI22 Samsung - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1586. K7A161800A-FI25 Samsung - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1587. K7A161800A-QC(I)25/16/14 Samsung - 1Mx18-Bit Synchronous Pipelined Burst SRAMThe K7A163600A and K7A161800A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  1588. K7A161800A-QC14 Samsung - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1589. K7A161800A-QC16 Samsung - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1590. K7A161800A-QC20 Samsung - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1591. K7A161800A-QC22 Samsung - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1592. K7A161800A-QC25 Samsung - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1593. K7A161800A-QI14 Samsung - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1594. K7A161800A-QI16 Samsung - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1595. K7A161800A-QI20 Samsung - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1596. K7A161800A-QI22 Samsung - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1597. K7A161800A-QI25 Samsung - K7A161800A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.2 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1598. K7A161800M Samsung - K7A161800M 512K X 36 & 1M X 18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.3,3.8,4.0,4.5 ; Speed-tcyc (MHz) = 183,150,138,100 ; I/o Voltage(V) = 2.5,3.3 ; Package = 10TQFP,119BGA ; Production Status = Eol ; Comments = 2E1D
  1599. K7A161801A Samsung - 512Kx36 & 1Mx18 Synchronous SRAM
  1600. K7A161801A-QC14 Samsung - K7A161801A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1601. K7A161801A-QC16 Samsung - K7A161801A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1602. K7A161801A-QC20 Samsung - K7A161801A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1603. K7A161801A-QC22 Samsung - K7A161801A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1604. K7A161801A-QC25 Samsung - K7A161801A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1605. K7A161801A-QI14 Samsung - K7A161801A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1606. K7A161801A-QI16 Samsung - K7A161801A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1607. K7A161801A-QI20 Samsung - K7A161801A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1608. K7A161801A-QI22 Samsung - K7A161801A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1609. K7A161801A-QI25 Samsung - K7A161801A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1610. K7A161801M Samsung - K7A161801M 512K X 36 & 1M X 18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.8,4.0,4.5 ; Speed-tcyc (MHz) = 150,138,100 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E2D
  1611. K7A161830B Samsung - 1Mx18-Bit Synchronous Pipelined Burst SRAMThe K7A161830B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  1612. K7A161830B-PI16 Samsung - 18mb B-die Sync Sram Specification 100tqfp With Pb, Pb-free
  1613. K7A161830B-PI25 Samsung - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  1614. K7A161830B-Q(P)C(1)25-16 Samsung - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  1615. K7A161830B-Q(P)C(I)25/16 Samsung - 1Mx18-Bit Synchronous Pipelined Burst SRAMThe K7A161830B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  1616. K7A161831B-PI20 Samsung - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  1617. K7A161831B-Q(P)C(1)20 Samsung - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  1618. K7A161835B-Q(P)C(1)75 Samsung - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  1619. K7A161880A Samsung - K7A161880A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 1.8 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1620. K7A161880A-QC14 Samsung - K7A161880A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 1.8 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1621. K7A161880A-QI14 Samsung - K7A161880A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 1.8 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1622. K7A163200A Samsung - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1623. K7A163200A-QC14 Samsung - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1624. K7A163200A-QC16 Samsung - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1625. K7A163200A-QC20 Samsung - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1626. K7A163200A-QC22 Samsung - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1627. K7A163200A-QC25 Samsung - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1628. K7A163200A-QI14 Samsung - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1629. K7A163200A-QI16 Samsung - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1630. K7A163200A-QI20 Samsung - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1631. K7A163200A-QI22 Samsung - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1632. K7A163200A-QI25 Samsung - K7A163200A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1633. K7A163201A Samsung - K7A163201A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1634. K7A163201A-QC14 Samsung - K7A163201A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1635. K7A163201A-QC16 Samsung - K7A163201A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1636. K7A163201A-QC20 Samsung - K7A163201A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1637. K7A163201A-QC22 Samsung - K7A163201A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1638. K7A163201A-QC25 Samsung - K7A163201A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1639. K7A163201A-QI14 Samsung - K7A163201A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1640. K7A163201A-QI16 Samsung - K7A163201A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1641. K7A163201A-QI20 Samsung - K7A163201A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1642. K7A163201A-QI25 Samsung - K7A163201A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1643. K7A163600A Samsung - 512Kx36 & 1Mx18 Synchronous SRAM
  1644. K7A163600A-QC(I)25/16/14 Samsung - 512Kx36 -Bit Synchronous Pipelined Burst SRAMThe K7A163600A and K7A161800A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.It is organized as 512K(1M) words of 36(32/18) bits and integrates address and control registers,A 2-bit burst address counter and added some new functions for high performance cache RAM applications; /GW, /BW, /LBO, ZZ. Write cycles are internally self-timed and synchronous.
  1645. K7A163600A-QC14 Samsung - K7A163600A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1646. K7A163600A-QC16 Samsung - K7A163600A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1647. K7A163600A-QC20 Samsung - K7A163600A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1648. K7A163600A-QC22 Samsung - K7A163600A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1649. K7A163600A-QC25 Samsung - K7A163600A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1650. K7A163600A-QI14 Samsung - K7A163600A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1651. K7A163600A-QI16 Samsung - K7A163600A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1652. K7A163600A-QI20 Samsung - K7A163600A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1653. K7A163600A-QI25 Samsung - K7A163600A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E1D
  1654. K7A163600M Samsung - K7A163600M 512K X 36 & 1M X 18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.3,3.8,4.0,4.5 ; Speed-tcyc (MHz) = 150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100QFP,119BGA ; Production Status = Eol ; Comments = 2E1D
  1655. K7A163601A Samsung - 512Kx36 & 1Mx18 Synchronous SRAM
  1656. K7A163601A-QC(I)20/16 Samsung - 512Kx36 -Bit Synchronous Pipelined Burst SRAMThe K7A163601A and K7A161801A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.It is organized as 512K(1M) words of 36(32/18) bits and integrates address and control registers,A 2-bit burst address counter and added some new functions for high performance cache RAM applications; /GW, /BW, /LBO, ZZ. Write cycles are internally self-timed and synchronous.
  1657. K7A163601A-QC14 Samsung - K7A163601A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1658. K7A163601A-QC16 Samsung - K7A163601A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1659. K7A163601A-QC20 Samsung - K7A163601A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1660. K7A163601A-QC22 Samsung - K7A163601A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1661. K7A163601A-QC25 Samsung - K7A163601A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1662. K7A163601A-QI14 Samsung - K7A163601A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1663. K7A163601A-QI16 Samsung - K7A163601A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1664. K7A163601A-QI20 Samsung - K7A163601A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1665. K7A163601A-QI22 Samsung - K7A163601A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1666. K7A163601A-QI25 Samsung - K7A163601A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1667. K7A163601M Samsung - K7A163601M 512K X 36 & 1M X 18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.8,4.0,4.5 ; Speed-tcyc (MHz) = 150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E2D
  1668. K7A163630B Samsung - 512Kx36-Bit Synchronous Pipelined Burst SRAMThe K7A163630B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  1669. K7A163630B-PI16 Samsung - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  1670. K7A163630B-PI25 Samsung - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  1671. K7A163630B-Q(P)C(I)25/16 Samsung - 512Kx36-Bit Synchronous Pipelined Burst SRAMThe K7A163630B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  1672. K7A163631B Samsung - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  1673. K7A163631B-PI20 Samsung - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  1674. K7A163631B-Q(P)C(I)20 Samsung - 512Kx36-Bit Synchronous Pipelined Burst SRAMThe K7A163631B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  1675. K7A163680A Samsung - K7A163680A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 1.8 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1676. K7A163680A-QC14 Samsung - K7A163680A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 1.8 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1677. K7A163680A-QI14 Samsung - K7A163680A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SPB ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,138 ; I/o Voltage(V) = 1.8 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1678. K7A201800A Samsung - 128Kx18 Synchronous SRAM
  1679. K7A201800B Samsung - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  1680. K7A201800B-QC14 Samsung - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  1681. K7A201800B-QC16 Samsung - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  1682. K7A201800B-QC20 Samsung - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  1683. K7A201800B-QC22 Samsung - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  1684. K7A201800B-QC25 Samsung - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  1685. K7A201800B-QI14 Samsung - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  1686. K7A201800B-QI16 Samsung - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  1687. K7A201800B-QI20 Samsung - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  1688. K7A201800B-QI22 Samsung - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  1689. K7A201800B-QI25 Samsung - K7A201800B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  1690. K7A203200A Samsung - K7A203200A 64K X 32-Bit Synchronous Pipelined Burst SRAM ; Organization = 64Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.8,4.0,4.5 ; Speed-tcyc (MHz) = 150,138,117,100 ; I/o Voltage(V) = 2.5,3.3 ; Package = TQFP ; Production Status = Eol ; Comments = Design is Not Recommended
  1691. K7A203200B Samsung - 64Kx36/x32 Synchronous SRAM
  1692. K7A203200B-QC(I)14 Samsung - 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
  1693. K7A203200B-QC14 Samsung - 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
  1694. K7A203200B-QC14 Samsung - 64kx36/x32 Synchronous Sram
  1695. K7A203200B-QC16 Samsung - K7A203200B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1696. K7A203200B-QC20 Samsung - K7A203200B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1697. K7A203200B-QC22 Samsung - K7A203200B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1698. K7A203200B-QC25 Samsung - K7A203200B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1699. K7A203200B-QCI14 Samsung - 64Kx36/x32 Synchronous SRAM
  1700. K7A203200B-QI14 Samsung - K7A203200B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1701. K7A203200B-QI16 Samsung - K7A203200B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1702. K7A203200B-QI20 Samsung - K7A203200B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1703. K7A203200B-QI22 Samsung - K7A203200B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1704. K7A203200B-QI25 Samsung - K7A203200B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,150,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1705. K7A203600 Samsung - 64kx36-bit Synchronous Pipelined Burst Sram
  1706. K7A203600A Samsung - 64Kx36-Bit Synchronous Pipelined Burst SRAM
  1707. K7A203600B Samsung - 64Kx36/x32 Synchronous SRAM
  1708. K7A203600B-QC(I)14 Samsung - 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
  1709. K7A203600B-QC14 Samsung - 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
  1710. K7A203600B-QC14 Samsung - 64Kx36/x32 Synchronous SRAM
  1711. K7A203600B-QC16 Samsung - K7A203600B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1712. K7A203600B-QC20 Samsung - K7A203600B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1713. K7A203600B-QC22 Samsung - K7A203600B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1714. K7A203600B-QC25 Samsung - K7A203600B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1715. K7A203600B-QCI14 Samsung - 64Kx36/x32 Synchronous SRAM
  1716. K7A203600B-QI14 Samsung - K7A203600B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1717. K7A203600B-QI16 Samsung - K7A203600B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1718. K7A203600B-QI20 Samsung - K7A203600B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1719. K7A203600B-QI22 Samsung - K7A203600B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1720. K7A203600B-QI25 Samsung - K7A203600B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.5,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,167,138 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1721. K7A321800M Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  1722. K7A321800M-QC(I)25/20/14 Samsung - 1Mx36 Bit Synchronous Pipelined Burst SRAMThe K7A323600M and K7A321800M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.It is organized as 1M(2M) words of 36(18) bits and integrates address and control registers,A 2-bit burst address counter and added some new functions for high performance cache RAM applications; /GW, /BW, /LBO, ZZ. Write cycles are internally self-timed and synchronous.
  1723. K7A321800M-QC14 Samsung - 1mx36 & 2mx18 Synchronous Sram
  1724. K7A321800M-QC14 Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  1725. K7A321800M-QC20 Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  1726. K7A321800M-QC20 Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  1727. K7A321800M-QC25 Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  1728. K7A321801M Samsung - K7A321801M 2Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1729. K7A321801M-QC14 Samsung - K7A321801M 2Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1730. K7A321801M-QC15 Samsung - K7A321801M 2Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1731. K7A321801M-QC16 Samsung - K7A321801M 2Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1732. K7A321801M-QC20 Samsung - K7A321801M 2Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1733. K7A321801M-QC22 Samsung - K7A321801M 2Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1734. K7A321801M-QC25 Samsung - K7A321801M 2Mx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1735. K7A323600M Samsung - 1mx36 & 2mx18 Synchronous Sram
  1736. K7A323600M-QC(I)25/20/14 Samsung - 1Mx36 Bit Synchronous Burst SRAMThe K7B323625M and K7B321825M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  1737. K7A323600M-QC14 Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  1738. K7A323600M-QC14 Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  1739. K7A323600M-QC20 Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  1740. K7A323600M-QC20 Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  1741. K7A323600M-QC25 Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  1742. K7A323600M-QC25 Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  1743. K7A323601M Samsung - K7A323601M 1Mx36 Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1744. K7A323601M-QC14 Samsung - K7A323601M 1Mx36 Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1745. K7A323601M-QC15 Samsung - K7A323601M 1Mx36 Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1746. K7A323601M-QC16 Samsung - K7A323601M 1Mx36 Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1747. K7A323601M-QC20 Samsung - K7A323601M 1Mx36 Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1748. K7A323601M-QC22 Samsung - K7A323601M 1Mx36 Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1749. K7A323601M-QC25 Samsung - K7A323601M 1Mx36 Bit Synchronous Pipelined Burst SRAM ; Organization = 1Mx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1,3.5,3.8,4.0 ; Speed-tcyc (MHz) = 250,225,200,167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = 2E2D
  1750. K7A401800A Samsung - K7A401800A 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.0 ; Speed-tcyc (MHz) = 167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1751. K7A401800B Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  1752. K7A401800B-QC Samsung - 128kx36/x32 & 256kx18 Synchronous Sram
  1753. K7A401800B-QC(I)16/14 Samsung - 256Kx18-Bit Synchronous Pipelined Burst SRAMhe K7A403600B, K7A403200B and K7A401800B are 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  1754. K7A401800B-QC14 Samsung - K7A401800B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1755. K7A401800B-QC16 Samsung - K7A401800B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1756. K7A401800B-QI14 Samsung - K7A401800B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1757. K7A401800B-QI16 Samsung - K7A401800B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1758. K7A401800M Samsung - 256kx18 Synchronous Sram
  1759. K7A401809A Samsung - 128kx36 & 256kx18-bit Synchronous Pipelined Burst Sram
  1760. K7A401809B Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  1761. K7A401809B-QC Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  1762. K7A401809B-QC20 Samsung - K7A401809B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1763. K7A401809B-QC22 Samsung - K7A401809B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1764. K7A401809B-QC25 Samsung - K7A401809B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1765. K7A401809B-QC27 Samsung - K7A401809B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1766. K7A401809B-QC30 Samsung - K7A401809B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1767. K7A401809B-QI20 Samsung - K7A401809B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1768. K7A401809B-QI22 Samsung - K7A401809B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1769. K7A401809B-QI25 Samsung - K7A401809B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1770. K7A401809B-QI27 Samsung - K7A401809B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1771. K7A401809B-QI30 Samsung - K7A401809B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1772. K7A401844A Samsung - K7A401844A 256K X 18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 3.8,4.0 ; Speed-tcyc (MHz) = 150,138 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1773. K7A401849A Samsung - K7A401849A 128K X 18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.2,2.5,2.8,3.1,3.5 ; Speed-tcyc (MHz) = 275,250,225,200,167 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1774. K7A403200B Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  1775. K7A403200B-QC Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  1776. K7A403200B-QC(I)16/14 Samsung - 128Kx32 Bit Synchronous Pipelined Burst SRAMThe K7A403600B, K7A403200B and K7A401800B are 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System
  1777. K7A403200B-QC14 Samsung - K7A403200B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1778. K7A403200B-QC16 Samsung - K7A403200B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1779. K7A403200B-QI14 Samsung - K7A403200B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1780. K7A403200B-QI16 Samsung - K7A403200B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1781. K7A403200M Samsung - 128Kx32-Bit Synchronous Pipelined Burst SRAM
  1782. K7A403200M-10 Samsung - 128Kx32-Bit Synchronous Pipelined Burst SRAM
  1783. K7A403200M-14 Samsung - 128kx32-bit Synchronous Pipelined Burst Sram
  1784. K7A403200M-15 Samsung - 128Kx32-Bit Synchronous Pipelined Burst SRAM
  1785. K7A403200M-16 Samsung - 128Kx32-Bit Synchronous Pipelined Burst SRAM
  1786. K7A403201B Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  1787. K7A403201B-QC Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  1788. K7A403201B-QC14 Samsung - K7A403201B 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E2D
  1789. K7A403201B-QC16 Samsung - K7A403201B 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E2D
  1790. K7A403201B-QI14 Samsung - K7A403201B 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E2D
  1791. K7A403201B-QI16 Samsung - K7A403201B 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E2D
  1792. K7A403209B Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  1793. K7A403209B-QC Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  1794. K7A403209B-QC20 Samsung - K7A403209B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1795. K7A403209B-QC22 Samsung - K7A403209B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1796. K7A403209B-QC25 Samsung - K7A403209B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1797. K7A403209B-QC27 Samsung - K7A403209B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1798. K7A403209B-QC30 Samsung - K7A403209B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1799. K7A403209B-QI20 Samsung - K7A403209B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1800. K7A403209B-QI22 Samsung - K7A403209B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1801. K7A403209B-QI25 Samsung - K7A403209B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1802. K7A403209B-QI27 Samsung - K7A403209B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1803. K7A403209B-QI30 Samsung - K7A403209B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1804. K7A403600A Samsung - K7A403600A 128Kx36-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.0 ; Speed-tcyc (MHz) = 167,150,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1805. K7A403600B Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  1806. K7A403600B-QC Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  1807. K7A403600B-QC(I)16/14 Samsung - 128Kx36 Bit Synchronous Pipelined Burst SRAMThe K7A403600B, K7A403200B and K7A401800B are 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  1808. K7A403600B-QC14 Samsung - K7A403600B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1809. K7A403600B-QC16 Samsung - K7A403600B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1810. K7A403600B-QI14 Samsung - K7A403600B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1811. K7A403600B-QI16 Samsung - K7A403600B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1812. K7A403600M Samsung - K7A403600M 128Kx36-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.0,4.0 ; Speed-tcyc (MHz) = 250,225,200,183,175,167,150,138,117 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E1D
  1813. K7A403601A Samsung - K7A403601A 128K X 36-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.0,5.0 ; Speed-tcyc (MHz) = 167,150,138,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  1814. K7A403601B Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  1815. K7A403601B-QC Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  1816. K7A403601B-QC14 Samsung - K7A403601B 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E2D
  1817. K7A403601B-QC16 Samsung - K7A403601B 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E2D
  1818. K7A403601B-QI14 Samsung - K7A403601B 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E2D
  1819. K7A403601B-QI16 Samsung - K7A403601B 128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E2D
  1820. K7A403601M Samsung - K7A403601M 128K X 36-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 4.5,5.0,5.0 ; Speed-tcyc (MHz) = 138,117,100 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E2D
  1821. K7A403609A Samsung - 128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM
  1822. K7A403609B Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  1823. K7A403609B-QC Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  1824. K7A403609B-QC(I)30/27/25/22/20 Samsung - 128Kx36-Bit Synchronous Pipelined Burst SRAMThe K7A403609B, K7A403209B and K7A401809B are 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  1825. K7A403609B-QC20 Samsung - K7A403609B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1826. K7A403609B-QC22 Samsung - K7A403609B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1827. K7A403609B-QC25 Samsung - K7A403609B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1828. K7A403609B-QC27 Samsung - K7A403609B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1829. K7A403609B-QC30 Samsung - K7A403609B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1830. K7A403609B-QI20 Samsung - K7A403609B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1831. K7A403609B-QI22 Samsung - K7A403609B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1832. K7A403609B-QI25 Samsung - K7A403609B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1833. K7A403609B-QI27 Samsung - K7A403609B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1834. K7A403609B-QI30 Samsung - K7A403609B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.2,2.2,2.4,2.6,2.8 ; Speed-tcyc (MHz) = 300,275,250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = 2E1D
  1835. K7A403644A Samsung - K7A403644A 128K X 36-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 3.8,4.0 ; Speed-tcyc (MHz) = 150,138 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1836. K7A403649A Samsung - K7A403649A 128K X 36-Bit Synchronous Pipelined Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.2,2.5,2.8,3.1,3.5 ; Speed-tcyc (MHz) = 275,250,225,200,167 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1837. K7A801800 Samsung - 256kx36 & 512kx18-bit Synchronous Pipelined Burst Sram
  1838. K7A801800A Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  1839. K7A801800A-10 Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  1840. K7A801800A-14 Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  1841. K7A801800A-15 Samsung - 256kx36 & 512kx18-bit Synchronous Pipelined Burst Sram
  1842. K7A801800A-16 Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  1843. K7A801800B Samsung - 256Kx36 & 512Kx18 Synchronous SRAM
  1844. K7A801800B-QC(I)16/14 Samsung - 512Kx18-Bit Synchronous Pipelined Burst SRAMhe K7A803600B and K7A801800B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  1845. K7A801800B-QC14 Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  1846. K7A801800B-QC16 Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  1847. K7A801800B-QI14 Samsung - K7A801800B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1848. K7A801800B-QI16 Samsung - K7A801800B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1849. K7A801800M Samsung - 256kx36 & 512kx18 Synchronous Sram
  1850. K7A801801A Samsung - K7A801801A 256Kx36 & 512Kx18 Synchronous SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.0,4.2,4.5 ; Speed-tcyc (MHz) = 167,150,138,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1851. K7A801801B Samsung - K7A801801B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1852. K7A801801B-QC14 Samsung - K7A801801B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1853. K7A801801B-QC16 Samsung - K7A801801B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1854. K7A801801B-QI14 Samsung - K7A801801B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1855. K7A801801B-QI16 Samsung - K7A801801B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1856. K7A801801M Samsung - 256kx36 & 512kx18 Synchronous Sram
  1857. K7A801808B Samsung - K7A801808B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1858. K7A801808B-QC20 Samsung - K7A801808B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1859. K7A801808B-QC25 Samsung - K7A801808B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1860. K7A801808B-QI20 Samsung - K7A801808B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1861. K7A801808B-QI25 Samsung - K7A801808B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1862. K7A801809A Samsung - 256kx36 & 512kx18 Synchronous Sram
  1863. K7A801809B Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  1864. K7A801809B-QC20 Samsung - K7A803609B / K7A803209B / K7A801809B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1865. K7A801809B-QC25 Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  1866. K7A801809B-QCI25 Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  1867. K7A801809B-QI20 Samsung - K7A803609B / K7A803209B / K7A801809B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1868. K7A801809B-QI25 Samsung - K7A803609B / K7A803209B / K7A801809B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1869. K7A803200B Samsung - K7A803200B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1870. K7A803200B-QC14 Samsung - K7A803200B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1871. K7A803200B-QC16 Samsung - K7A803200B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1872. K7A803200B-QI14 Samsung - K7A803200B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1873. K7A803200B-QI16 Samsung - K7A803200B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1874. K7A803201B Samsung - K7A803201B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E2D
  1875. K7A803201B-QC14 Samsung - K7A803201B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E2D
  1876. K7A803201B-QC16 Samsung - K7A803201B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E2D
  1877. K7A803201B-QI14 Samsung - K7A803201B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E2D
  1878. K7A803201B-QI16 Samsung - K7A803201B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = 2E2D
  1879. K7A803208B Samsung - K7A803208B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1880. K7A803208B-QC20 Samsung - K7A803208B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1881. K7A803208B-QC25 Samsung - K7A803208B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1882. K7A803208B-QI20 Samsung - K7A803208B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1883. K7A803208B-QI25 Samsung - K7A803208B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1884. K7A803209B Samsung - K7A803209B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1885. K7A803209B-QC20 Samsung - K7A803209B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1886. K7A803209B-QC25 Samsung - K7A803209B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1887. K7A803209B-QI20 Samsung - K7A803209B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1888. K7A803209B-QI25 Samsung - K7A803209B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1889. K7A803600A Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  1890. K7A803600A-10 Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  1891. K7A803600A-14 Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  1892. K7A803600A-15 Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  1893. K7A803600A-16 Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  1894. K7A803600B Samsung - 256Kx36 & 512Kx18 Synchronous SRAM
  1895. K7A803600B-QC(I)16/14 Samsung - 256Kx36 Bit Synchronous Pipelined Burst SRAMThe K7A803600B and K7A801800B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  1896. K7A803600B-QC14 Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  1897. K7A803600B-QC16 Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  1898. K7A803600B-QI14 Samsung - K7A803600B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1899. K7A803600B-QI16 Samsung - K7A803600B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1900. K7A803600M Samsung - 256Kx36 & 512Kx18 Synchronous SRAM
  1901. K7A803601A Samsung - K7A803601A 256Kx36 & 512Kx18 Synchronous SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.0,4.2,4.5 ; Speed-tcyc (MHz) = 167,150,138,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1902. K7A803601B Samsung - K7A803601B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1903. K7A803601B-QC14 Samsung - K7A803601B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1904. K7A803601B-QC16 Samsung - K7A803601B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1905. K7A803601B-QI14 Samsung - K7A803601B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1906. K7A803601B-QI16 Samsung - K7A803601B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,4.0 ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1907. K7A803601M Samsung - 256Kx36 & 512Kx18 Synchronous SRAM
  1908. K7A803608B Samsung - K7A803608B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1909. K7A803608B-QC20 Samsung - K7A803608B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1910. K7A803608B-QC25 Samsung - K7A803608B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1911. K7A803608B-QI20 Samsung - K7A803608B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1912. K7A803608B-QI25 Samsung - K7A803608B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E2D
  1913. K7A803609A Samsung - 256Kx36 & 512Kx18 Synchronous SRAM
  1914. K7A803609B Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  1915. K7A803609B-QC(I)25 Samsung - 256Kx36-Bit Synchronous Pipelined Burst SRAMThe K7A803609B and K7A801809B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 256K(512K) words of 36(18) bits and integrates address and control registers,A 2-bit burst address counter and added some new functions for high performance cache RAM applications;
  1916. K7A803609B-QC20 Samsung - K7A803209B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1917. K7A803609B-QC25 Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  1918. K7A803609B-QI20 Samsung - K7A803209B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1919. K7A803609B-QI25 Samsung - K7A803209B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.1 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = 2E1D
  1920. K7A803644B Samsung - K7A803644B 256Kx36-Bit Synchronous Pipelined Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 167,138 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  1921. K7B161825A Samsung - 512Kx36 & 1Mx18 Synchronous SRAM
  1922. K7B161825A-FC65 Samsung - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1923. K7B161825A-FC75 Samsung - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1924. K7B161825A-FC85 Samsung - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1925. K7B161825A-FI65 Samsung - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1926. K7B161825A-FI75 Samsung - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1927. K7B161825A-FI85 Samsung - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1928. K7B161825A-QC(I)75/85 Samsung - 512Kx36 -Bit Synchronous Burst SRAMThe K7B163625A and K7B161825A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  1929. K7B161825A-QC65 Samsung - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1930. K7B161825A-QC75 Samsung - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1931. K7B161825A-QC85 Samsung - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1932. K7B161825A-QI65 Samsung - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1933. K7B161825A-QI75 Samsung - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1934. K7B161825A-QI85 Samsung - K7B161825A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1935. K7B161825M Samsung - K7B161825M 512K X 36 & 1M X 18-Bit Synchronous Burst SRAM ; Organization = 1Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 8.5,9.0,10.0 ; Speed-tcyc (MHz) = 100,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP,119BGA ; Production Status = Eol ; Comments = -
  1936. K7B161835B Samsung - 1Mx18-Bit Synchronous Burst SRAMThe K7B161835B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  1937. K7B161835B-PI75 Samsung - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  1938. K7B161835B-Q(P)C(I)75 Samsung - 1Mx18-Bit Synchronous Burst SRAMThe K7B161835B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  1939. K7B163225A Samsung - K7B163225A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1940. K7B163225A-QC65 Samsung - K7B163225A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1941. K7B163225A-QC75 Samsung - K7B163225A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1942. K7B163225A-QC85 Samsung - K7B163225A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1943. K7B163225A-QI65 Samsung - K7B163225A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1944. K7B163225A-QI75 Samsung - K7B163225A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1945. K7B163225A-QI85 Samsung - K7B163225A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1946. K7B163625A Samsung - 512Kx36 & 1Mx18 Synchronous SRAM
  1947. K7B163625A-FC65 Samsung - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1948. K7B163625A-FC75 Samsung - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1949. K7B163625A-FC85 Samsung - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1950. K7B163625A-FI65 Samsung - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1951. K7B163625A-FI75 Samsung - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1952. K7B163625A-FI85 Samsung - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1953. K7B163625A-QC(I)75/85 Samsung - 1Mx18-Bit Synchronous Burst SRAMThe K7B163625A and K7B161825A are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  1954. K7B163625A-QC65 Samsung - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1955. K7B163625A-QC75 Samsung - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1956. K7B163625A-QC85 Samsung - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1957. K7B163625A-QI65 Samsung - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1958. K7B163625A-QI75 Samsung - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1959. K7B163625A-QI85 Samsung - K7B163625A 512Kx36 & 512Kx32 & 1Mx18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = -
  1960. K7B163625M Samsung - K7B163625M 512K X 36 & 1M X 18-Bit Synchronous Burst SRAM ; Organization = 512Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 8.5,9.0 ; Speed-tcyc (MHz) = 100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP,119BGA ; Production Status = Eol ; Comments = -
  1961. K7B163635B Samsung - 512Kx36-Bit Synchronous Burst SRAMThe K7B161835B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  1962. K7B163635B-PI75 Samsung - 18MB B-DIE SYNC SRAM SPECIFICATION 100TQFP WITH PB, PB-FREE
  1963. K7B163635B-Q(P)C(I)75 Samsung - 512Kx36-Bit Synchronous Burst SRAMThe K7B161835B is 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  1964. K7B201825A Samsung - K7B201825A 128K X 18-Bit Synchronous Burst SRAM ; Organization = 128Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.0,9.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = TQFP ; Production Status = Eol ; Comments = Design is Not Recommended
  1965. K7B201825B Samsung - K7B201825B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1966. K7B201825B-QC65 Samsung - K7B201825B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1967. K7B201825B-QC75 Samsung - K7B201825B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1968. K7B201825B-QC85 Samsung - K7B201825B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1969. K7B201825B-QI65 Samsung - K7B201825B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1970. K7B201825B-QI75 Samsung - K7B201825B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1971. K7B201825B-QI85 Samsung - K7B201825B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 128Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1972. K7B203225B Samsung - K7B203225B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1973. K7B203225B-QC65 Samsung - K7B203225B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1974. K7B203225B-QC75 Samsung - K7B203225B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1975. K7B203225B-QC80 Samsung - K7B203225B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1976. K7B203225B-QI65 Samsung - K7B203225B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1977. K7B203225B-QI75 Samsung - K7B203225B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1978. K7B203225B-QI80 Samsung - K7B203225B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1979. K7B203625A Samsung - K7B203625A 64K X 36-Bit Synchronous Burst SRAM ; Organization = 64Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.0,9.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = TQFP ; Production Status = Eol ; Comments = Design is Not Recommended
  1980. K7B203625B Samsung - K7B203625B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1981. K7B203625B-QC65 Samsung - K7B203625B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1982. K7B203625B-QC75 Samsung - K7B203625B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1983. K7B203625B-QC80 Samsung - K7B203625B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1984. K7B203625B-QI65 Samsung - K7B203625B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1985. K7B203625B-QI75 Samsung - K7B203625B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1986. K7B203625B-QI80 Samsung - K7B203625B 64Kx36 & 64Kx32 & 128Kx18 Synchronous SRAM ; Organization = 64Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  1987. K7B321825M Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  1988. K7B321825M-FC65 Samsung - K7B321825M 2Mx18-Bit Synchronous Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  1989. K7B321825M-FC75 Samsung - K7B321825M 2Mx18-Bit Synchronous Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  1990. K7B321825M-FC85 Samsung - K7B321825M 2Mx18-Bit Synchronous Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  1991. K7B321825M-HC65 Samsung - K7B321825M 2Mx18-Bit Synchronous Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  1992. K7B321825M-HC75 Samsung - K7B321825M 2Mx18-Bit Synchronous Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  1993. K7B321825M-HC85 Samsung - K7B321825M 2Mx18-Bit Synchronous Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  1994. K7B321825M-QC65 Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  1995. K7B321825M-QC65 Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  1996. K7B321825M-QC65/75 Samsung - 1Mx36 Bit Synchronous Pipelined Burst SRAMThe K7A323600M and K7A321800M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.It is organized as 1M(2M) words of 36(18) bits and integrates address and control registers,A 2-bit burst address counter and added some new functions for high performance cache RAM applications; /GW, /BW, /LBO, ZZ. Write cycles are internally self-timed and synchronous.
  1997. K7B321825M-QC75 Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  1998. K7B321825M-QC75 Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  1999. K7B321825M-QC85 Samsung - K7B321825M 2Mx18-Bit Synchronous Burst SRAM ; Organization = 2Mx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  2000. K7B323625M Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  2001. K7B323625M-QC65 Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  2002. K7B323625M-QC65 Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  2003. K7B323625M-QC6575 Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  2004. K7B323625M-QC75 Samsung - 1Mx36 & 2Mx18 Synchronous SRAM
  2005. K7B401825A Samsung - K7B401825A 128K X 36-Bit Synchronous Burst SRAM ; Organization = 256Kx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0,9.0 ; Speed-tcyc (MHz) = 133,117,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  2006. K7B401825B Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  2007. K7B401825B-Q(P)C(I)65/75 Samsung - 256Kx18-Bit Synchronous Burst SRAMThe K7B403625B and K7B401825B are 4,718,592 bits Synchronous Static Random Access Memory designed to support zero wait state performance for advanced Pentium/Power PC based system.
  2008. K7B401825B-QC Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  2009. K7B401825B-QC65 Samsung - K7B401825B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = -
  2010. K7B401825B-QC75 Samsung - K7B401825B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = -
  2011. K7B401825B-QC80 Samsung - K7B401825B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = -
  2012. K7B401825B-QI65 Samsung - K7B401825B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = -
  2013. K7B401825B-QI75 Samsung - K7B401825B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = -
  2014. K7B401825B-QI80 Samsung - K7B401825B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = -
  2015. K7B401825M Samsung - K7B401825M 256K X 18-Bit Synchronous Burst SRAM ; Organization = 256Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.0,9.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  2016. K7B403225B Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  2017. K7B403225B-QC Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  2018. K7B403225B-QC65 Samsung - K7B403225B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = -
  2019. K7B403225B-QC75 Samsung - K7B403225B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = -
  2020. K7B403225B-QC80 Samsung - K7B403225B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = -
  2021. K7B403225B-QI65 Samsung - K7B403225B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = -
  2022. K7B403225B-QI75 Samsung - K7B403225B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = -
  2023. K7B403225B-QI80 Samsung - K7B403225B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = -
  2024. K7B403225M Samsung - K7B403225M 128K X 32-Bit Synchronous Burst SRAM ; Organization = 128Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.0,9.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  2025. K7B403625A Samsung - K7B403625A 128K X 36-Bit Synchronous Burst SRAM ; Organization = 128Kx36 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0,9.0 ; Speed-tcyc (MHz) = 133,117,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2026. K7B403625B Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  2027. K7B403625B-Q(P)C(I)65/75 Samsung - 128Kx36 Bit Synchronous Burst SRAMThe K7B403625B and K7B401825B are 4,718,592 bits Synchronous Static Random Access Memory designed to support zero wait state performance for advanced Pentium/Power PC based system.
  2028. K7B403625B-QC Samsung - 128Kx36/x32 & 256Kx18 Synchronous SRAM
  2029. K7B403625B-QC65 Samsung - K7B403625B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = -
  2030. K7B403625B-QC75 Samsung - K7B403625B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = -
  2031. K7B403625B-QC80 Samsung - K7B403625B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = -
  2032. K7B403625B-QI65 Samsung - K7B403625B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = -
  2033. K7B403625B-QI75 Samsung - K7B403625B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = -
  2034. K7B403625B-QI80 Samsung - K7B403625B 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Customer Sample ; Comments = -
  2035. K7B403625M Samsung - K7B403625M 128K X 36-Bit Synchronous Burst SRAM ; Organization = 128Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.0,9.0 ; Speed-tcyc (MHz) = 117,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  2036. K7B801825A Samsung - K7B801825A 512Kx18-Bit Synchronous Burst SRAM ; Organization = 512Kx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,9.0,10.0 ; Speed-tcyc (MHz) = 117,100,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA ; Production Status = Eol ; Comments = -
  2037. K7B801825B Samsung - 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
  2038. K7B801825B-QC65 Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  2039. K7B801825B-QC75 Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  2040. K7B801825B-QC85 Samsung - K7B801825B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2041. K7B801825B-QI65 Samsung - K7B801825B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2042. K7B801825B-QI75 Samsung - K7B801825B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2043. K7B801825B-QI85 Samsung - K7B801825B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM ; Organization = 512Kx18 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2044. K7B801825M Samsung - 256kx36 & 512kx18 Synchronous Sram
  2045. K7B803225B Samsung - K7B803225B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2046. K7B803225B-QC65 Samsung - K7B803225B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2047. K7B803225B-QC75 Samsung - K7B803225B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2048. K7B803225B-QC85 Samsung - K7B803225B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2049. K7B803225B-QI65 Samsung - K7B803225B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2050. K7B803225B-QI75 Samsung - K7B803225B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2051. K7B803225B-QI85 Samsung - K7B803225B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM ; Organization = 256Kx32 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2052. K7B803625 Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  2053. K7B803625A Samsung - K7B803625A Bit Synchronous Burst SRAM ; Organization = 256Kx36 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,9.0,10.0 ; Speed-tcyc (MHz) = 117,100,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA ; Production Status = Eol ; Comments = -
  2054. K7B803625B Samsung - 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
  2055. K7B803625B-Q(P)C(I)65/75 Samsung - 512Kx18-Bit Synchronous Burst SRAMThe K7B803625B and K7B801825B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
  2056. K7B803625B-QC65 Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  2057. K7B803625B-QC75 Samsung - 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
  2058. K7B803625B-QC85 Samsung - K7B803625B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2059. K7B803625B-QI65 Samsung - K7B803625B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2060. K7B803625B-QI75 Samsung - K7B803625B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2061. K7B803625B-QI85 Samsung - K7B803625B 256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Burst SRAM ; Organization = 256Kx36 ; Operating Mode = SB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2062. K7B803625M Samsung - 256Kx36 & 512Kx18 Synchronous SRAM
  2063. K7D161871B Samsung - K7D161871B 16M DDR Synchronous SRAM ; Organization = 1Mx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.3 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2064. K7D161871B-HC30 Samsung - K7D161871B 16M DDR Synchronous SRAM ; Organization = 1Mx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.3 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2065. K7D161871B-HC33 Samsung - K7D161871B 16M DDR Synchronous SRAM ; Organization = 1Mx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.3 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2066. K7D161871B-HC37 Samsung - K7D161871B 16M DDR Synchronous SRAM ; Organization = 1Mx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.3 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2067. K7D161871M Samsung - K7D161871M 512K X 36 & 1M X 18 SRAM ; Organization = 1Mx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.6,1.7,1.7,1.9 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2068. K7D161871M-HC30 Samsung - K7D161871M 512K X 36 & 1M X 18 SRAM ; Organization = 1Mx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.6,1.7,1.7,1.9 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2069. K7D161871M-HC33 Samsung - K7D161871M 512K X 36 & 1M X 18 SRAM ; Organization = 1Mx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.6,1.7,1.7,1.9 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2070. K7D161871M-HC37 Samsung - K7D161871M 512K X 36 & 1M X 18 SRAM ; Organization = 1Mx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.6,1.7,1.7,1.9 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2071. K7D161871M-HC40 Samsung - K7D161871M 512K X 36 & 1M X 18 SRAM ; Organization = 1Mx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.6,1.7,1.7,1.9 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2072. K7D161874B Samsung - 1Mx18 OrganizationsThe K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung\'s advanced CMOS technology.
  2073. K7D161874B-HC27 Samsung - 1Mx18 OrganizationsThe K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung\'s advanced CMOS technology.
  2074. K7D161874B-HC30 Samsung - 1Mx18 OrganizationsThe K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung\'s advanced CMOS technology.
  2075. K7D161874B-HC33 Samsung - 1Mx18 OrganizationsThe K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung\'s advanced CMOS technology.
  2076. K7D161874B-HC37 Samsung - 1Mx18 OrganizationsThe K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung\'s advanced CMOS technology.
  2077. K7D161888B Samsung - K7D161888B 16M DDR Synchronous SRAM ; Organization = 512Kx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.3 ; Cycle Time(MHz) = 375,333,300,250 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2078. K7D161888B-HC25 Samsung - K7D161888B 16M DDR Synchronous SRAM ; Organization = 512Kx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.3 ; Cycle Time(MHz) = 375,333,300,250 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2079. K7D161888B-HC30 Samsung - K7D161888B 16M DDR Synchronous SRAM ; Organization = 512Kx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.3 ; Cycle Time(MHz) = 375,333,300,250 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2080. K7D161888B-HC33 Samsung - K7D161888B 16M DDR Synchronous SRAM ; Organization = 512Kx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.3 ; Cycle Time(MHz) = 375,333,300,250 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2081. K7D161888B-HC37 Samsung - K7D161888B 16M DDR Synchronous SRAM ; Organization = 512Kx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.3 ; Cycle Time(MHz) = 375,333,300,250 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2082. K7D161888M Samsung - K7D161888M 512K X 36 & 1M X 18 SRAM ; Organization = 512Kx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 1.7,1.8,1.9,2.1 ; Cycle Time(MHz) = 370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2083. K7D161888M-HC25 Samsung - K7D161888M 512K X 36 & 1M X 18 SRAM ; Organization = 512Kx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 1.7,1.8,1.9,2.1 ; Cycle Time(MHz) = 370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2084. K7D161888M-HC30 Samsung - K7D161888M 512K X 36 & 1M X 18 SRAM ; Organization = 512Kx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 1.7,1.8,1.9,2.1 ; Cycle Time(MHz) = 370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2085. K7D161888M-HC33 Samsung - K7D161888M 512K X 36 & 1M X 18 SRAM ; Organization = 512Kx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 1.7,1.8,1.9,2.1 ; Cycle Time(MHz) = 370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2086. K7D161888M-HC37 Samsung - K7D161888M 512K X 36 & 1M X 18 SRAM ; Organization = 512Kx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 1.7,1.8,1.9,2.1 ; Cycle Time(MHz) = 370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2087. K7D163671B Samsung - K7D163671B 16M DDR Synchronous SRAM ; Organization = 512Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.3 ; Cycle Time(MHz) = 370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2088. K7D163671B-HC30 Samsung - K7D163671B 16M DDR Synchronous SRAM ; Organization = 512Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.3 ; Cycle Time(MHz) = 370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2089. K7D163671B-HC33 Samsung - K7D163671B 16M DDR Synchronous SRAM ; Organization = 512Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.3 ; Cycle Time(MHz) = 370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2090. K7D163671B-HC37 Samsung - K7D163671B 16M DDR Synchronous SRAM ; Organization = 512Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.3 ; Cycle Time(MHz) = 370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2091. K7D163671M Samsung - K7D163671M 512K X 36 & 1M X 18 SRAM ; Organization = 512Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.6,1.7,1.7,1.9 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2092. K7D163671M-HC30 Samsung - K7D163671M 512K X 36 & 1M X 18 SRAM ; Organization = 512Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.6,1.7,1.7,1.9 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2093. K7D163671M-HC33 Samsung - K7D163671M 512K X 36 & 1M X 18 SRAM ; Organization = 512Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.6,1.7,1.7,1.9 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2094. K7D163671M-HC37 Samsung - K7D163671M 512K X 36 & 1M X 18 SRAM ; Organization = 512Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.6,1.7,1.7,1.9 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2095. K7D163671M-HC40 Samsung - K7D163671M 512K X 36 & 1M X 18 SRAM ; Organization = 512Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.6,1.7,1.7,1.9 ; Cycle Time(MHz) = 400,370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2096. K7D163674B Samsung - 512Kx36 OrganizationsThe K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung\'s advanced CMOS technology.
  2097. K7D163674B-HC27 Samsung - 512Kx36 OrganizationsThe K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung\'s advanced CMOS technology.
  2098. K7D163674B-HC30 Samsung - 512Kx36 OrganizationsThe K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung\'s advanced CMOS technology.
  2099. K7D163674B-HC33 Samsung - 512Kx36 OrganizationsThe K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung\'s advanced CMOS technology.
  2100. K7D163674B-HC37 Samsung - 512Kx36 OrganizationsThe K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 524,288 words by 36 bits for K7D163674B and 1,048,576 words by 18 bits for K7D161874B, fabricated using Samsung\'s advanced CMOS technology.
  2101. K7D321874A Samsung - 32mb A-die Ddr Sram Specification
  2102. K7D321874A-HC33 Samsung - 32Mb A-die DDR SRAM Specification
  2103. K7D321874A-HC37 Samsung - 32Mb A-die DDR SRAM Specification
  2104. K7D321874A-HC40 Samsung - 32Mb A-die DDR SRAM Specification
  2105. K7D321874A-HC45 Samsung - K7D321874A 32M DDR Synchronous SRAM ; Organization = 2Mx18 ; VDD(V) = 2.5(Min 1.8V) ; Access Time-tCD(ns) = 2.5 ; Cycle Time(MHz) = 500,450,400,333 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153FCBGA ; Production Status = Engineer Sample ; Comments = -
  2106. K7D321874A-HC50 Samsung - K7D321874A 32M DDR Synchronous SRAM ; Organization = 2Mx18 ; VDD(V) = 2.5(Min 1.8V) ; Access Time-tCD(ns) = 2.5 ; Cycle Time(MHz) = 500,450,400,333 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153FCBGA ; Production Status = Engineer Sample ; Comments = -
  2107. K7D321874A-HGC33 Samsung - 32Mb A-die DDR SRAM Specification
  2108. K7D321874A-HGC37 Samsung - 32Mb A-die DDR SRAM Specification
  2109. K7D321874A-HGC40 Samsung - 32Mb A-die DDR SRAM Specification
  2110. K7D321874C Samsung - 2Mx18 SRAMThe K7D321874C is 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices.They are organized as 2,097,152 words by 18 bits for K7D321874C, fabricated using Samsung\'s advanced CMOS technology. Single differential HSTL level clock, K and /K are used to initiate the read/write operation and all internal operations are self-timed.
  2111. K7D321874C-H(G)C33 Samsung - 2Mx18 SRAMThe K7D321874C is 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices.They are organized as 2,097,152 words by 18 bits for K7D321874C, fabricated using Samsung\'s advanced CMOS technology. Single differential HSTL level clock, K and /K are used to initiate the read/write operation and all internal operations are self-timed.
  2112. K7D321874C-H(G)C37 Samsung - 2Mx18 SRAMThe K7D321874C is 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices.They are organized as 2,097,152 words by 18 bits for K7D321874C, fabricated using Samsung\'s advanced CMOS technology. Single differential HSTL level clock, K and /K are used to initiate the read/write operation and all internal operations are self-timed.
  2113. K7D321874C-H(G)C40 Samsung - 2Mx18 SRAMThe K7D321874C is 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices.They are organized as 2,097,152 words by 18 bits for K7D321874C, fabricated using Samsung\'s advanced CMOS technology. Single differential HSTL level clock, K and /K are used to initiate the read/write operation and all internal operations are self-timed.
  2114. K7D323674A Samsung - 32Mb A-die DDR SRAM Specification
  2115. K7D323674A-HC33 Samsung - 32Mb A-die DDR SRAM Specification
  2116. K7D323674A-HC37 Samsung - 32Mb A-die DDR SRAM Specification
  2117. K7D323674A-HC40 Samsung - 32Mb A-die DDR SRAM Specification
  2118. K7D323674A-HC45 Samsung - K7D323674A 32M DDR Synchronous SRAM ; Organization = 1Mx36 ; VDD(V) = 2.5(Min 1.8V) ; Access Time-tCD(ns) = 2.5 ; Cycle Time(MHz) = 500,450,400,333 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153FCBGA ; Production Status = Engineer Sample ; Comments = -
  2119. K7D323674A-HC50 Samsung - K7D323674A 32M DDR Synchronous SRAM ; Organization = 1Mx36 ; VDD(V) = 2.5(Min 1.8V) ; Access Time-tCD(ns) = 2.5 ; Cycle Time(MHz) = 500,450,400,333 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153FCBGA ; Production Status = Engineer Sample ; Comments = -
  2120. K7D323674A-HGC33 Samsung - 32Mb A-die DDR SRAM Specification
  2121. K7D323674A-HGC37 Samsung - 32Mb A-die DDR SRAM Specification
  2122. K7D323674A-HGC40 Samsung - 32Mb A-die DDR SRAM Specification
  2123. K7D323674C Samsung - 1Mx36 SRAMThe K7D323674C is 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices.They are organized as 1,048,576 words by 36 bits for K7D323674C, fabricated using Samsung\'s advanced CMOS technology. Single differential HSTL level clock, K and /K are used to initiate the read/write operation and all internal operations are self-timed.
  2124. K7D323674C-H(G)C33 Samsung - 1Mx36 SRAMThe K7D323674C is 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices.They are organized as 1,048,576 words by 36 bits for K7D323674C, fabricated using Samsung\'s advanced CMOS technology. Single differential HSTL level clock, K and /K are used to initiate the read/write operation and all internal operations are self-timed.
  2125. K7D323674C-H(G)C37 Samsung - 1Mx36 SRAMThe K7D323674C is 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices.They are organized as 1,048,576 words by 36 bits for K7D323674C, fabricated using Samsung\'s advanced CMOS technology. Single differential HSTL level clock, K and /K are used to initiate the read/write operation and all internal operations are self-timed.
  2126. K7D323674C-H(G)C40 Samsung - 1Mx36 SRAMThe K7D323674C is 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices.They are organized as 1,048,576 words by 36 bits for K7D323674C, fabricated using Samsung\'s advanced CMOS technology. Single differential HSTL level clock, K and /K are used to initiate the read/write operation and all internal operations are self-timed.
  2127. K7D401871M Samsung - K7D401871M 128K X 36 & 256K X 18 SRAM ; Organization = 256Kx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.4,2.7,3.3 ; Cycle Time(MHz) = 250,225,200,167 ; I/o Voltage(V) = 1.5 ; Package = 153(9x17)PBGA ; Production Status = Eol ; Comments = -
  2128. K7D401871M-H16 Samsung - K7D401871M 128K X 36 & 256K X 18 SRAM ; Organization = 256Kx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.4,2.7,3.3 ; Cycle Time(MHz) = 250,225,200,167 ; I/o Voltage(V) = 1.5 ; Package = 153(9x17)PBGA ; Production Status = Eol ; Comments = -
  2129. K7D401871M-H20 Samsung - K7D401871M 128K X 36 & 256K X 18 SRAM ; Organization = 256Kx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.4,2.7,3.3 ; Cycle Time(MHz) = 250,225,200,167 ; I/o Voltage(V) = 1.5 ; Package = 153(9x17)PBGA ; Production Status = Eol ; Comments = -
  2130. K7D401871M-H22 Samsung - K7D401871M 128K X 36 & 256K X 18 SRAM ; Organization = 256Kx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.4,2.7,3.3 ; Cycle Time(MHz) = 250,225,200,167 ; I/o Voltage(V) = 1.5 ; Package = 153(9x17)PBGA ; Production Status = Eol ; Comments = -
  2131. K7D401871M-H25 Samsung - K7D401871M 128K X 36 & 256K X 18 SRAM ; Organization = 256Kx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.4,2.7,3.3 ; Cycle Time(MHz) = 250,225,200,167 ; I/o Voltage(V) = 1.5 ; Package = 153(9x17)PBGA ; Production Status = Eol ; Comments = -
  2132. K7D403671M Samsung - K7D403671M 128K X 36 & 256K X 18 SRAM ; Organization = 128Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.4,2.7,3.3 ; Cycle Time(MHz) = 250,225,200,167 ; I/o Voltage(V) = 1.5 ; Package = 153(9x17) Pbga ; Production Status = Eol ; Comments = -
  2133. K7D403671M-H16 Samsung - K7D403671M 128K X 36 & 256K X 18 SRAM ; Organization = 128Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.4,2.7,3.3 ; Cycle Time(MHz) = 250,225,200,167 ; I/o Voltage(V) = 1.5 ; Package = 153(9x17) Pbga ; Production Status = Eol ; Comments = -
  2134. K7D403671M-H20 Samsung - K7D403671M 128K X 36 & 256K X 18 SRAM ; Organization = 128Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.4,2.7,3.3 ; Cycle Time(MHz) = 250,225,200,167 ; I/o Voltage(V) = 1.5 ; Package = 153(9x17) Pbga ; Production Status = Eol ; Comments = -
  2135. K7D403671M-H22 Samsung - K7D403671M 128K X 36 & 256K X 18 SRAM ; Organization = 128Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.4,2.7,3.3 ; Cycle Time(MHz) = 250,225,200,167 ; I/o Voltage(V) = 1.5 ; Package = 153(9x17) Pbga ; Production Status = Eol ; Comments = -
  2136. K7D403671M-H25 Samsung - K7D403671M 128K X 36 & 256K X 18 SRAM ; Organization = 128Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.4,2.7,3.3 ; Cycle Time(MHz) = 250,225,200,167 ; I/o Voltage(V) = 1.5 ; Package = 153(9x17) Pbga ; Production Status = Eol ; Comments = -
  2137. K7D801871B Samsung - K7D801871B 256K X 36 & 512K X 18 SRAM ; Organization = 512Kx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.7/1.9/2.1 ; Cycle Time(MHz) = 370/357/333/330/250 ; I/o Voltage(V) = 1.5(Max 2.0) ; Package = 153BGA ; Production Status = Mass Production ; Comments = -
  2138. K7D801871B-HC25 Samsung - 256Kx36 & 512Kx18 SRAM
  2139. K7D801871B-HC30 Samsung - 256kx36 & 512kx18 Sram
  2140. K7D801871B-HC33 Samsung - 256Kx36 & 512Kx18 SRAM
  2141. K7D801871B-HC35 Samsung - 256Kx36 & 512Kx18 SRAM
  2142. K7D801871B-HC37 Samsung - 256Kx36 & 512Kx18 SRAM
  2143. K7D801871C Samsung - K7D801871C 8M DDR Synchronous SRAM ; Organization = 512Kx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.5 ; Cycle Time(MHz) = 370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Engineer Sample ; Comments = -
  2144. K7D801871C-HC33 Samsung - K7D801871C 8M DDR Synchronous SRAM ; Organization = 512Kx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.5 ; Cycle Time(MHz) = 370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Engineer Sample ; Comments = -
  2145. K7D801871C-HC37 Samsung - K7D801871C 8M DDR Synchronous SRAM ; Organization = 512Kx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.5 ; Cycle Time(MHz) = 370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Engineer Sample ; Comments = -
  2146. K7D803671B Samsung - 256Kx36 & 512Kx18 SRAM
  2147. K7D803671B-HC25 Samsung - 256Kx36 & 512Kx18 SRAM
  2148. K7D803671B-HC30 Samsung - 256Kx36 & 512Kx18 SRAM
  2149. K7D803671B-HC33 Samsung - 256Kx36 & 512Kx18 SRAM
  2150. K7D803671B-HC35 Samsung - 256Kx36 & 512Kx18 SRAM
  2151. K7D803671B-HC37 Samsung - 256Kx36 & 512Kx18 SRAM
  2152. K7D803671C Samsung - K7D803671C 8M DDR Synchronous SRAM ; Organization = 256Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.5 ; Cycle Time(MHz) = 370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Engineer Sample ; Comments = -
  2153. K7D803671C-HC30 Samsung - K7D803671C 8M DDR Synchronous SRAM ; Organization = 256Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.5 ; Cycle Time(MHz) = 370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Engineer Sample ; Comments = -
  2154. K7D803671C-HC33 Samsung - K7D803671C 8M DDR Synchronous SRAM ; Organization = 256Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.5 ; Cycle Time(MHz) = 370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Engineer Sample ; Comments = -
  2155. K7D803671C-HC37 Samsung - K7D803671C 8M DDR Synchronous SRAM ; Organization = 256Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.5 ; Cycle Time(MHz) = 370,333,300 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 153BGA ; Production Status = Engineer Sample ; Comments = -
  2156. K7H163654A Samsung -
  2157. K7I160882B Samsung - K7I160882B 512Kx36-bit, 1Mx18-bit, 2Mx8-bit Ddrii Cio b2 SRAM ; Organization = 2Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2158. K7I160882B-FC16 Samsung - K7I160882B 512Kx36-bit, 1Mx18-bit, 2Mx8-bit Ddrii Cio b2 SRAM ; Organization = 2Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2159. K7I160882B-FC20 Samsung - K7I160882B 512Kx36-bit, 1Mx18-bit, 2Mx8-bit Ddrii Cio b2 SRAM ; Organization = 2Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2160. K7I160882B-FC25 Samsung - K7I160882B 512Kx36-bit, 1Mx18-bit, 2Mx8-bit Ddrii Cio b2 SRAM ; Organization = 2Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2161. K7I160882B-FC30 Samsung - K7I160882B 512Kx36-bit, 1Mx18-bit, 2Mx8-bit Ddrii Cio b2 SRAM ; Organization = 2Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2162. K7I160884B Samsung - K7I160884B 512K X 36Mb, 1M X 18Mb, 2M X 8Mb Ddrii Cio b4 SRAM ; Organization = 2Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2163. K7I160884B-FC16 Samsung - K7I160884B 512K X 36Mb, 1M X 18Mb, 2M X 8Mb Ddrii Cio b4 SRAM ; Organization = 2Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2164. K7I160884B-FC20 Samsung - K7I160884B 512K X 36Mb, 1M X 18Mb, 2M X 8Mb Ddrii Cio b4 SRAM ; Organization = 2Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2165. K7I160884B-FC25 Samsung - K7I160884B 512K X 36Mb, 1M X 18Mb, 2M X 8Mb Ddrii Cio b4 SRAM ; Organization = 2Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2166. K7I160884B-FC30 Samsung - K7I160884B 512K X 36Mb, 1M X 18Mb, 2M X 8Mb Ddrii Cio b4 SRAM ; Organization = 2Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2167. K7I161882B Samsung - K7I161882B 512Kx36-bit, 1Mx18-bit, 2Mx8-bit Ddrii Cio b2 SRAM ; Organization = 1Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2168. K7I161882B-FC16 Samsung - 512kx36-bit, 1mx18-bit Ddrii Cio B2 Sram
  2169. K7I161882B-FC20 Samsung - 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM
  2170. K7I161882B-FC25 Samsung - 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM
  2171. K7I161882B-FC30 Samsung - 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM
  2172. K7I161884B Samsung - K7I161884B 512K X 36Mb, 1M X 18Mb, 2M X 8Mb Ddrii Cio b4 SRAM ; Organization = 1Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2173. K7I161884B-FC16 Samsung - K7I161884B 512K X 36Mb, 1M X 18Mb, 2M X 8Mb Ddrii Cio b4 SRAM ; Organization = 1Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2174. K7I161884B-FC20 Samsung - K7I161884B 512K X 36Mb, 1M X 18Mb, 2M X 8Mb Ddrii Cio b4 SRAM ; Organization = 1Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2175. K7I161884B-FC25 Samsung - K7I161884B 512K X 36Mb, 1M X 18Mb, 2M X 8Mb Ddrii Cio b4 SRAM ; Organization = 1Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2176. K7I161884B-FC30 Samsung - K7I161884B 512K X 36Mb, 1M X 18Mb, 2M X 8Mb Ddrii Cio b4 SRAM ; Organization = 1Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2177. K7I163682B Samsung - 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM
  2178. K7I163682B-FC16 Samsung - 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM
  2179. K7I163682B-FC20 Samsung - 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM
  2180. K7I163682B-FC25 Samsung - 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM
  2181. K7I163682B-FC30 Samsung - 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM
  2182. K7I163684B Samsung - K7I163684B 512K X 36Mb, 1M X 18Mb, 2M X 8Mb Ddrii Cio b4 SRAM ; Organization = 512Kx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2183. K7I163684B-FC16 Samsung - K7I163684B 512K X 36Mb, 1M X 18Mb, 2M X 8Mb Ddrii Cio b4 SRAM ; Organization = 512Kx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2184. K7I163684B-FC20 Samsung - K7I163684B 512K X 36Mb, 1M X 18Mb, 2M X 8Mb Ddrii Cio b4 SRAM ; Organization = 512Kx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2185. K7I163684B-FC25 Samsung - K7I163684B 512K X 36Mb, 1M X 18Mb, 2M X 8Mb Ddrii Cio b4 SRAM ; Organization = 512Kx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2186. K7I163684B-FC30 Samsung - K7I163684B 512K X 36Mb, 1M X 18Mb, 2M X 8Mb Ddrii Cio b4 SRAM ; Organization = 512Kx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Cio
  2187. K7I320882M Samsung - K7I320882M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b2 SRAM ; Organization = 4Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = Cio
  2188. K7I320882M-FC16 Samsung - K7I320882M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b2 SRAM ; Organization = 4Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = Cio
  2189. K7I320882M-FC20 Samsung - K7I320882M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b2 SRAM ; Organization = 4Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = Cio
  2190. K7I320882M-FC25 Samsung - K7I320882M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b2 SRAM ; Organization = 4Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = Cio
  2191. K7I320884M Samsung - K7I320884M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 4Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = CIO-4B
  2192. K7I320884M-FC16 Samsung - K7I320884M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 4Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = CIO-4B
  2193. K7I320884M-FC20 Samsung - K7I320884M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 4Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = CIO-4B
  2194. K7I320884M-FC25 Samsung - K7I320884M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 4Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = CIO-4B
  2195. K7I321882M Samsung - 1mx36 & 2mx18 Ddrii Cio B2 Sram
  2196. K7I321882M-FC16 Samsung - K7I321882M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b2 SRAM ; Organization = 2Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = CIO-2B
  2197. K7I321882M-FC20 Samsung - K7I321882M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b2 SRAM ; Organization = 2Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = CIO-2B
  2198. K7I321882M-FC25 Samsung - K7I321882M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b2 SRAM ; Organization = 2Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = CIO-2B
  2199. K7I321884M Samsung - K7I321884M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 2Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = CIO-4B
  2200. K7I321884M-FC16 Samsung - K7I321884M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 2Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = CIO-4B
  2201. K7I321884M-FC20 Samsung - K7I321884M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 2Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = CIO-4B
  2202. K7I321884M-FC25 Samsung - K7I321884M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 2Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = CIO-4B
  2203. K7I323682M Samsung - 1Mx36 & 2Mx18 DDRII CIO b2 SRAM
  2204. K7I323682M-FC16 Samsung - K7I323682M 1M X 36-bit, 2M X 18-bit, 4M X 8-bit Ddrii Cio b2 SRAM ; Organization = 1Mx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = CIO-2B
  2205. K7I323682M-FC20 Samsung - K7I323682M 1M X 36-bit, 2M X 18-bit, 4M X 8-bit Ddrii Cio b2 SRAM ; Organization = 1Mx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = CIO-2B
  2206. K7I323682M-FC25 Samsung - K7I323682M 1M X 36-bit, 2M X 18-bit, 4M X 8-bit Ddrii Cio b2 SRAM ; Organization = 1Mx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = CIO-2B
  2207. K7I323684M Samsung - K7I323684M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 1Mx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = CIO-4B
  2208. K7I323684M-FC16 Samsung - K7I323684M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 1Mx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = CIO-4B
  2209. K7I323684M-FC20 Samsung - K7I323684M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 1Mx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = CIO-4B
  2210. K7I323684M-FC25 Samsung - K7I323684M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 1Mx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = CIO-4B
  2211. K7I640882M Samsung - K7I640882M 2Mx36-bit, 4Mx18-bit, 8Mx8-bit Ddrii Cio b2 SRAM ; Organization = 8Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2212. K7I640882M-FC16 Samsung - K7I640882M 2Mx36-bit, 4Mx18-bit, 8Mx8-bit Ddrii Cio b2 SRAM ; Organization = 8Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2213. K7I640882M-FC20 Samsung - K7I640882M 2Mx36-bit, 4Mx18-bit, 8Mx8-bit Ddrii Cio b2 SRAM ; Organization = 8Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2214. K7I640882M-FC25 Samsung - K7I640882M 2Mx36-bit, 4Mx18-bit, 8Mx8-bit Ddrii Cio b2 SRAM ; Organization = 8Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2215. K7I640882M-FC30 Samsung - K7I640882M 2Mx36-bit, 4Mx18-bit, 8Mx8-bit Ddrii Cio b2 SRAM ; Organization = 8Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2216. K7I640884M Samsung - K7I640884M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 8Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2217. K7I640884M-FC16 Samsung - K7I640884M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 8Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2218. K7I640884M-FC20 Samsung - K7I640884M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 8Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2219. K7I640884M-FC25 Samsung - K7I640884M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 8Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2220. K7I640884M-FC30 Samsung - K7I640884M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 8Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2221. K7I641882M Samsung - 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
  2222. K7I641882M-EI16 Samsung - 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
  2223. K7I641882M-EI20 Samsung - 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
  2224. K7I641882M-EI25 Samsung - 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
  2225. K7I641882M-EI30 Samsung - 72mb M-die Ddrii Sram Specification 165 Fbga With Pb & Pb-free (rohs Compliant)
  2226. K7I641882M-FC16 Samsung - 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
  2227. K7I641882M-FC20 Samsung - 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
  2228. K7I641882M-FC25 Samsung - 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
  2229. K7I641882M-FC30 Samsung - 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
  2230. K7I641884M Samsung - K7I641884M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 4Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2231. K7I641884M-FC16 Samsung - K7I641884M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 4Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2232. K7I641884M-FC20 Samsung - K7I641884M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 4Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2233. K7I641884M-FC25 Samsung - K7I641884M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 4Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2234. K7I641884M-FC30 Samsung - K7I641884M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 4Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2235. K7I643682M Samsung - 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
  2236. K7I643682M-EI16 Samsung - 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
  2237. K7I643682M-EI20 Samsung - 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
  2238. K7I643682M-EI25 Samsung - 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
  2239. K7I643682M-EI30 Samsung - 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
  2240. K7I643682M-FC16 Samsung - 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
  2241. K7I643682M-FC20 Samsung - 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
  2242. K7I643682M-FC25 Samsung - 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
  2243. K7I643682M-FC30 Samsung - 72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
  2244. K7I643684M Samsung - K7I643684M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 2Mx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2245. K7I643684M-FC16 Samsung - K7I643684M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 2Mx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2246. K7I643684M-FC20 Samsung - K7I643684M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 2Mx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2247. K7I643684M-FC25 Samsung - K7I643684M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 2Mx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2248. K7I643684M-FC30 Samsung - K7I643684M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit Ddrii Cio b4 SRAM ; Organization = 2Mx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2249. K7J160882B Samsung - K7J160882B 512K X 36 & 1M X 18 & 2M X 8 DDR ii Sio b2 SRAM ; Organization = 2Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Sio
  2250. K7J160882B-FC16 Samsung - K7J160882B 512K X 36 & 1M X 18 & 2M X 8 DDR ii Sio b2 SRAM ; Organization = 2Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Sio
  2251. K7J160882B-FC20 Samsung - K7J160882B 512K X 36 & 1M X 18 & 2M X 8 DDR ii Sio b2 SRAM ; Organization = 2Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Sio
  2252. K7J160882B-FC25 Samsung - K7J160882B 512K X 36 & 1M X 18 & 2M X 8 DDR ii Sio b2 SRAM ; Organization = 2Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Sio
  2253. K7J160882B-FC30 Samsung - K7J160882B 512K X 36 & 1M X 18 & 2M X 8 DDR ii Sio b2 SRAM ; Organization = 2Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Sio
  2254. K7J161882B Samsung - 512kx36 & 1mx18 Ddr Ii Sio B2 Sram
  2255. K7J161882B-FC16 Samsung - K7J161882B 512K X 36 & 1M X 18 & 2M X 8 DDR ii Sio b2 SRAM ; Organization = 1Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Sio
  2256. K7J161882B-FC20 Samsung - K7J161882B 512K X 36 & 1M X 18 & 2M X 8 DDR ii Sio b2 SRAM ; Organization = 1Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Sio
  2257. K7J161882B-FC25 Samsung - K7J161882B 512K X 36 & 1M X 18 & 2M X 8 DDR ii Sio b2 SRAM ; Organization = 1Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Sio
  2258. K7J161882B-FC30 Samsung - K7J161882B 512K X 36 & 1M X 18 & 2M X 8 DDR ii Sio b2 SRAM ; Organization = 1Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Sio
  2259. K7J163682B Samsung - 512Kx36 & 1Mx18 DDR II SIO b2 SRAM
  2260. K7J163682B-FC16 Samsung - K7J163682B 512K X 36 & 1M X 18 & 2M X 8 DDR ii Sio b2 SRAM ; Organization = 512Kx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Sio
  2261. K7J163682B-FC20 Samsung - K7J163682B 512K X 36 & 1M X 18 & 2M X 8 DDR ii Sio b2 SRAM ; Organization = 512Kx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Sio
  2262. K7J163682B-FC25 Samsung - K7J163682B 512K X 36 & 1M X 18 & 2M X 8 DDR ii Sio b2 SRAM ; Organization = 512Kx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Sio
  2263. K7J163682B-FC30 Samsung - K7J163682B 512K X 36 & 1M X 18 & 2M X 8 DDR ii Sio b2 SRAM ; Organization = 512Kx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.45,0.50 ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineering Sample(Q3,\'03) ; Comments = Sio
  2264. K7J320882M Samsung - K7J320882M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDR ii Sio b2 SRAM ; Organization = 4Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = SIO-2B
  2265. K7J320882M-FC16 Samsung - K7J320882M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDR ii Sio b2 SRAM ; Organization = 4Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = SIO-2B
  2266. K7J320882M-FC20 Samsung - K7J320882M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDR ii Sio b2 SRAM ; Organization = 4Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = SIO-2B
  2267. K7J320882M-FC25 Samsung - K7J320882M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDR ii Sio b2 SRAM ; Organization = 4Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = SIO-2B
  2268. K7J321882M Samsung - K7J321882M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDR ii Sio b2 SRAM ; Organization = 2Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = SIO-2B
  2269. K7J321882M-FC16 Samsung - K7J321882M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDR ii Sio b2 SRAM ; Organization = 2Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = SIO-2B
  2270. K7J321882M-FC20 Samsung - K7J321882M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDR ii Sio b2 SRAM ; Organization = 2Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = SIO-2B
  2271. K7J321882M-FC25 Samsung - K7J321882M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDR ii Sio b2 SRAM ; Organization = 2Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = SIO-2B
  2272. K7J323682M Samsung - K7J323682M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDR ii Sio b2 SRAM ; Organization = 1Mx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = SIO-2B
  2273. K7J323682M-FC16 Samsung - K7J323682M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDR ii Sio b2 SRAM ; Organization = 1Mx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = SIO-2B
  2274. K7J323682M-FC20 Samsung - K7J323682M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDR ii Sio b2 SRAM ; Organization = 1Mx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = SIO-2B
  2275. K7J323682M-FC25 Samsung - K7J323682M 1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDR ii Sio b2 SRAM ; Organization = 1Mx36 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 0.45,0.45,0.50 ; Cycle Time(MHz) = 250,200,167 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Engineer Sample ; Comments = SIO-2B
  2276. K7J640882M Samsung - K7J640882M 2Mx36-bit, 4Mx18-bit, 8Mx8-bit DDR ii Sio b2 SRAM ; Organization = 8Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2277. K7J640882M-FC16 Samsung - K7J640882M 2Mx36-bit, 4Mx18-bit, 8Mx8-bit DDR ii Sio b2 SRAM ; Organization = 8Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2278. K7J640882M-FC20 Samsung - K7J640882M 2Mx36-bit, 4Mx18-bit, 8Mx8-bit DDR ii Sio b2 SRAM ; Organization = 8Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2279. K7J640882M-FC25 Samsung - K7J640882M 2Mx36-bit, 4Mx18-bit, 8Mx8-bit DDR ii Sio b2 SRAM ; Organization = 8Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2280. K7J640882M-FC30 Samsung - K7J640882M 2Mx36-bit, 4Mx18-bit, 8Mx8-bit DDR ii Sio b2 SRAM ; Organization = 8Mx8 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = - ; Cycle Time(MHz) = 300,250,200,167 ; I/o Voltage(V) = - ; Package = 165FBGA ; Production Status = Engineering Sample(2Q,\'04) ; Comments = -
  2281. K7J641882M Samsung - 72mb M-die Ddrii Sram Specification
  2282. K7J641882M-FC16 Samsung - 72Mb M-die DDRII SRAM Specification
  2283. K7J641882M-FC20 Samsung - 72Mb M-die DDRII SRAM Specification
  2284. K7J641882M-FC25 Samsung - 72Mb M-die DDRII SRAM Specification
  2285. K7J641882M-FC30 Samsung - 72Mb M-die DDRII SRAM Specification
  2286. K7J641882M-FECI16 Samsung - 72Mb M-die DDRII SRAM Specification
  2287. K7J641882M-FECI20 Samsung - 72Mb M-die DDRII SRAM Specification
  2288. K7J641882M-FECI25 Samsung - 72Mb M-die DDRII SRAM Specification
  2289. K7J641882M-FECI30 Samsung - 72Mb M-die DDRII SRAM Specification
  2290. K7J643682M Samsung - 72Mb M-die DDRII SRAM Specification
  2291. K7J643682M-FC16 Samsung - 72Mb M-die DDRII SRAM Specification
  2292. K7J643682M-FC20 Samsung - 72Mb M-die DDRII SRAM Specification
  2293. K7J643682M-FC25 Samsung - 72Mb M-die DDRII SRAM Specification
  2294. K7J643682M-FC30 Samsung - 72Mb M-die DDRII SRAM Specification
  2295. K7J643682M-FECI16 Samsung - 72Mb M-die DDRII SRAM Specification
  2296. K7J643682M-FECI20 Samsung - 72Mb M-die DDRII SRAM Specification
  2297. K7J643682M-FECI25 Samsung - 72Mb M-die DDRII SRAM Specification
  2298. K7J643682M-FECI30 Samsung - 72Mb M-die DDRII SRAM Specification
  2299. K7M161825A Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2300. K7M161825A-FC60 Samsung - K7M161825A 1Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2301. K7M161825A-FC65 Samsung - K7M161825A 1Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2302. K7M161825A-FC75 Samsung - K7M161825A 1Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2303. K7M161825A-FC85 Samsung - K7M161825A 1Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2304. K7M161825A-FI60 Samsung - K7M161825A 1Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2305. K7M161825A-FI65 Samsung - K7M161825A 1Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2306. K7M161825A-FI75 Samsung - K7M161825A 1Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2307. K7M161825A-FI85 Samsung - K7M161825A 1Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2308. K7M161825A-QC(I)65 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2309. K7M161825A-QC(I)65/75 Samsung - 1Mx18-Bit Flow Through NtRAM™The K7M163625A and K7M161825A are 18,874,368-bits Synchronous Static SRAMs.The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles.Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.Burst order control must be tied High or Low.
  2310. K7M161825A-QC(I)75 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2311. K7M161825A-QC60 Samsung - K7M161825A 1Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2312. K7M161825A-QC65 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2313. K7M161825A-QC75 Samsung - 512kx36 & 1mx18-bit Flow Through Ntram
  2314. K7M161825A-QC85 Samsung - K7M161825A 1Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2315. K7M161825A-QI60 Samsung - K7M161825A 1Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2316. K7M161825A-QI65 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2317. K7M161825A-QI75 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2318. K7M161825A-QI85 Samsung - K7M161825A 1Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2319. K7M161825M Samsung - 512kx36 & 1mx18 Flow-through Ntram-tm
  2320. K7M161835B Samsung - 1Mx18-Bit Flow Through NtRAM™The K7M161835B is 18,874,368-bits Synchronous Static SRAMs.The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
  2321. K7M161835B-Q(P)C(I)65 Samsung - 1Mx18-Bit Flow Through NtRAM™The K7M161835B is 18,874,368-bits Synchronous Static SRAMs.The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
  2322. K7M161835B-QC65 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2323. K7M161835B-QCI65 Samsung - 512kx36 & 1mx18 Pipelined Ntram
  2324. K7M163225A Samsung - K7M163225A 512K32-Bit Flow Through NtRAM™ ; Organization = 512Kx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2325. K7M163225A-QC60 Samsung - K7M163225A 512K32-Bit Flow Through NtRAM™ ; Organization = 512Kx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2326. K7M163225A-QC65 Samsung - K7M163225A 512K32-Bit Flow Through NtRAM™ ; Organization = 512Kx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2327. K7M163225A-QC75 Samsung - K7M163225A 512K32-Bit Flow Through NtRAM™ ; Organization = 512Kx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2328. K7M163225A-QC85 Samsung - K7M163225A 512K32-Bit Flow Through NtRAM™ ; Organization = 512Kx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2329. K7M163225A-QI60 Samsung - K7M163225A 512K32-Bit Flow Through NtRAM™ ; Organization = 512Kx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2330. K7M163225A-QI65 Samsung - K7M163225A 512K32-Bit Flow Through NtRAM™ ; Organization = 512Kx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2331. K7M163225A-QI75 Samsung - K7M163225A 512K32-Bit Flow Through NtRAM™ ; Organization = 512Kx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2332. K7M163225A-QI85 Samsung - K7M163225A 512K32-Bit Flow Through NtRAM™ ; Organization = 512Kx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2333. K7M163625A Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2334. K7M163625A-FC60 Samsung - K7M163625A 512Kx36-Bit Flow Through NtRAM™ ; Organization = 512Kx36 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2335. K7M163625A-FC65 Samsung - K7M163625A 512Kx36-Bit Flow Through NtRAM™ ; Organization = 512Kx36 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2336. K7M163625A-FC75 Samsung - K7M163625A 512Kx36-Bit Flow Through NtRAM™ ; Organization = 512Kx36 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2337. K7M163625A-FC85 Samsung - K7M163625A 512Kx36-Bit Flow Through NtRAM™ ; Organization = 512Kx36 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2338. K7M163625A-FI60 Samsung - K7M163625A 512Kx36-Bit Flow Through NtRAM™ ; Organization = 512Kx36 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2339. K7M163625A-FI65 Samsung - K7M163625A 512Kx36-Bit Flow Through NtRAM™ ; Organization = 512Kx36 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2340. K7M163625A-FI75 Samsung - K7M163625A 512Kx36-Bit Flow Through NtRAM™ ; Organization = 512Kx36 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2341. K7M163625A-FI85 Samsung - K7M163625A 512Kx36-Bit Flow Through NtRAM™ ; Organization = 512Kx36 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2342. K7M163625A-QC(I)65 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2343. K7M163625A-QC(I)65/75 Samsung - 512Kx36-Bit Flow Through NtRAM™The K7M163625A and K7M161825A are 18,874,368-bits Synchronous Static SRAMs.The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles.Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.Burst order control must be tied High or Low.
  2344. K7M163625A-QC(I)75 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2345. K7M163625A-QC60 Samsung - K7M163625A 512Kx36-Bit Flow Through NtRAM™ ; Organization = 512Kx36 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2346. K7M163625A-QC65 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2347. K7M163625A-QC75 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2348. K7M163625A-QC85 Samsung - K7M163625A 512Kx36-Bit Flow Through NtRAM™ ; Organization = 512Kx36 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2349. K7M163625A-QI60 Samsung - K7M163625A 512Kx36-Bit Flow Through NtRAM™ ; Organization = 512Kx36 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2350. K7M163625A-QI65 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2351. K7M163625A-QI75 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2352. K7M163625A-QI85 Samsung - K7M163625A 512Kx36-Bit Flow Through NtRAM™ ; Organization = 512Kx36 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 7.5,8.5,1.0 ; Speed-tcyc (MHz) = 133,117,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = FT
  2353. K7M163625M Samsung - 512Kx36 & 1Mx18 Flow-Through NtRAM-TM
  2354. K7M163635B Samsung - 512Kx36-Bit Flow Through NtRAM™The K7M163635B is 18,874,368-bits Synchronous Static SRAMs.The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
  2355. K7M163635B-Q(P)C(I)65 Samsung - 512Kx36-Bit Flow Through NtRAM™The K7M163635B is 18,874,368-bits Synchronous Static SRAMs.The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
  2356. K7M163635B-QC65 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2357. K7M163635B-QCI65 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2358. K7M321825M Samsung - 1Mx36 & 2Mx18 Flow-Through NtRAM
  2359. K7M321825M-FC65 Samsung - K7M321825M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 2Mx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  2360. K7M321825M-FC75 Samsung - K7M321825M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 2Mx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  2361. K7M321825M-FC85 Samsung - K7M321825M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 2Mx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  2362. K7M321825M-HC65 Samsung - K7M321825M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 2Mx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  2363. K7M321825M-HC75 Samsung - K7M321825M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 2Mx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  2364. K7M321825M-HC85 Samsung - K7M321825M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 2Mx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  2365. K7M321825M-Q(P)C65/75 Samsung - 2Mx18-Bit Flow Through NtRAM™he K7M321825M is 37,748,736-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles.Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.Burst order control must be tied High or Low.
  2366. K7M321825M-QC65 Samsung - K7M321825M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 2Mx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  2367. K7M321825M-QC75 Samsung - 1Mx36 & 2Mx18 Flow-Through NtRAM
  2368. K7M321825M-QC75 Samsung - 1Mx36 & 2Mx18-Bit Pipelined NtRAM
  2369. K7M321825M-QC75 Samsung - 1mx36 & 2mx18 Pipelined Ntram
  2370. K7M321825M-QC85 Samsung - K7M321825M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 2Mx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  2371. K7M323625M Samsung - 1Mx36 & 2Mx18 Flow-Through NtRAM
  2372. K7M323625M-FC65 Samsung - K7M323625M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  2373. K7M323625M-FC75 Samsung - K7M323625M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  2374. K7M323625M-FC85 Samsung - K7M323625M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  2375. K7M323625M-HC65 Samsung - K7M323625M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  2376. K7M323625M-HC75 Samsung - K7M323625M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  2377. K7M323625M-HC85 Samsung - K7M323625M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  2378. K7M323625M-Q(P)C65/75 Samsung - 1Mx36-Bit Flow Through NtRAM™The K7M323625M is 37,748,736-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles.Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.Burst order control must be tied High or Low.
  2379. K7M323625M-QC65 Samsung - K7M323625M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  2380. K7M323625M-QC75 Samsung - 1Mx36 & 2Mx18 Flow-Through NtRAM
  2381. K7M323625M-QC75 Samsung - 1Mx36 & 2Mx18-Bit Pipelined NtRAM
  2382. K7M323625M-QC75 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2383. K7M323625M-QC85 Samsung - K7M323625M 2Mx18-Bit Flow Through NtRAM™ ; Organization = 1Mx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,118,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  2384. K7M401825A Samsung - K7M401825A 256Kx18-Bit Flow-through NtRAM™ ; Organization = 256Kx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0,9.0 ; Speed-tcyc (MHz) = 133,117,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  2385. K7M401825B Samsung - K7M401825B 256Kx18-Bit Flow-through NtRAM™ ; Organization = 256Kx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2386. K7M401825B-QC65 Samsung - K7M401825B 256Kx18-Bit Flow-through NtRAM™ ; Organization = 256Kx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2387. K7M401825B-QC75 Samsung - K7M401825B 256Kx18-Bit Flow-through NtRAM™ ; Organization = 256Kx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2388. K7M401825B-QC80 Samsung - K7M401825B 256Kx18-Bit Flow-through NtRAM™ ; Organization = 256Kx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2389. K7M401825B-QI65 Samsung - K7M401825B 256Kx18-Bit Flow-through NtRAM™ ; Organization = 256Kx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2390. K7M401825B-QI75 Samsung - K7M401825B 256Kx18-Bit Flow-through NtRAM™ ; Organization = 256Kx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2391. K7M401825B-QI80 Samsung - K7M401825B 256Kx18-Bit Flow-through NtRAM™ ; Organization = 256Kx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2392. K7M401825M Samsung - K7M401825M 128Kx36 & 256Kx18 Flow-through NtRAM™ ; Organization = 256Kx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 8.0,9.0,10.0 ; Speed-tcyc (MHz) = 100,83, 83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  2393. K7M403225B Samsung - K7M403225B 128Kx32-Bit Flow-through NtRAM™ ; Organization = 128Kx32 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2394. K7M403225B-QC65 Samsung - K7M403225B 128Kx32-Bit Flow-through NtRAM™ ; Organization = 128Kx32 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2395. K7M403225B-QC75 Samsung - K7M403225B 128Kx32-Bit Flow-through NtRAM™ ; Organization = 128Kx32 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2396. K7M403225B-QC80 Samsung - K7M403225B 128Kx32-Bit Flow-through NtRAM™ ; Organization = 128Kx32 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2397. K7M403225B-QI65 Samsung - K7M403225B 128Kx32-Bit Flow-through NtRAM™ ; Organization = 128Kx32 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2398. K7M403225B-QI75 Samsung - K7M403225B 128Kx32-Bit Flow-through NtRAM™ ; Organization = 128Kx32 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2399. K7M403225B-QI80 Samsung - K7M403225B 128Kx32-Bit Flow-through NtRAM™ ; Organization = 128Kx32 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2400. K7M403625A Samsung - K7M403625A 128Kx36-Bit Flow-through NtRAM™ ; Organization = 128Kx36 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0,9.0 ; Speed-tcyc (MHz) = 133,117,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  2401. K7M403625B Samsung - K7M403625B 128Kx36-Bit Flow-through NtRAM™ ; Organization = 128Kx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2402. K7M403625B-QC65 Samsung - K7M403625B 128Kx36-Bit Flow-through NtRAM™ ; Organization = 128Kx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2403. K7M403625B-QC75 Samsung - K7M403625B 128Kx36-Bit Flow-through NtRAM™ ; Organization = 128Kx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2404. K7M403625B-QC80 Samsung - K7M403625B 128Kx36-Bit Flow-through NtRAM™ ; Organization = 128Kx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2405. K7M403625B-QI65 Samsung - K7M403625B 128Kx36-Bit Flow-through NtRAM™ ; Organization = 128Kx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2406. K7M403625B-QI75 Samsung - K7M403625B 128Kx36-Bit Flow-through NtRAM™ ; Organization = 128Kx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2407. K7M403625B-QI80 Samsung - K7M403625B 128Kx36-Bit Flow-through NtRAM™ ; Organization = 128Kx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.0 ; Speed-tcyc (MHz) = 133,118,100,83 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2408. K7M403625M Samsung - K7M403625M 128Kx36 Flow-through NtRAM™ ; Organization = 128Kx36 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 8.0,9.0,10.0 ; Speed-tcyc (MHz) = 100,83,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  2409. K7M801825A Samsung - 256kx36 & 512kx18 Flow-through Ntram Tm
  2410. K7M801825B Samsung - 256Kx36 & 512Kx18-Bit Flow Through NtRAM
  2411. K7M801825B-QC65 Samsung - 256Kx36 & 512Kx18-Bit Flow Through NtRAM
  2412. K7M801825B-QC65 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAM
  2413. K7M801825B-QC65 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
  2414. K7M801825B-QC75 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAM
  2415. K7M801825B-QC85 Samsung - K7M801825B 512Kx18 Flow-through NtRAM™ ; Organization = 512Kx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2416. K7M801825B-QI65 Samsung - K7M801825B 512Kx18 Flow-through NtRAM™ ; Organization = 512Kx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2417. K7M801825B-QI75 Samsung - K7M801825B 512Kx18 Flow-through NtRAM™ ; Organization = 512Kx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2418. K7M801825B-QI85 Samsung - K7M801825B 512Kx18 Flow-through NtRAM™ ; Organization = 512Kx18 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2419. K7M801825M Samsung - K7M801825M 512Kx18 Flow-through NtRAM™ ; Organization = 512Kx18 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 8.0,8.5,9.0,10.0 ; Speed-tcyc (MHz) = 117,100,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  2420. K7M803225B Samsung - K7M803225B 256Kx32 Flow-through NtRAM™ ; Organization = 256Kx32 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2421. K7M803225B-QC65 Samsung - K7M803225B 256Kx32 Flow-through NtRAM™ ; Organization = 256Kx32 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2422. K7M803225B-QC75 Samsung - K7M803225B 256Kx32 Flow-through NtRAM™ ; Organization = 256Kx32 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2423. K7M803225B-QC85 Samsung - K7M803225B 256Kx32 Flow-through NtRAM™ ; Organization = 256Kx32 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2424. K7M803225B-QI65 Samsung - K7M803225B 256Kx32 Flow-through NtRAM™ ; Organization = 256Kx32 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2425. K7M803225B-QI75 Samsung - K7M803225B 256Kx32 Flow-through NtRAM™ ; Organization = 256Kx32 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2426. K7M803225B-QI85 Samsung - K7M803225B 256Kx32 Flow-through NtRAM™ ; Organization = 256Kx32 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2427. K7M803625A Samsung - 256Kx36 & 512Kx18 Flow-Through NtRAM TM
  2428. K7M803625B Samsung - 256Kx36 & 512Kx18-Bit Flow Through NtRAM
  2429. K7M803625B-QC65 Samsung - 256Kx36 & 512Kx18-Bit Flow Through NtRAM
  2430. K7M803625B-QC65 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAM
  2431. K7M803625B-QC65 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
  2432. K7M803625B-QC75 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAM
  2433. K7M803625B-QC85 Samsung - K7M801825B 256Kx36/x32 & 512Kx18 Flow-through NtRAM™ ; Organization = 256Kx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2434. K7M803625B-QI65 Samsung - K7M801825B 256Kx36/x32 & 512Kx18 Flow-through NtRAM™ ; Organization = 256Kx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2435. K7M803625B-QI75 Samsung - K7M801825B 256Kx36/x32 & 512Kx18 Flow-through NtRAM™ ; Organization = 256Kx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2436. K7M803625B-QI85 Samsung - K7M801825B 256Kx36/x32 & 512Kx18 Flow-through NtRAM™ ; Organization = 256Kx36 ; Operating Mode = FT ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.5,8.5 ; Speed-tcyc (MHz) = 133,117,100,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2437. K7M803625M Samsung - K7M803625M 256Kx36 Flow-through NtRAM™ ; Organization = 256Kx36 ; Operating Mode = FT(SB) ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 8.0,8.5,9.0,10.0 ; Speed-tcyc (MHz) = 117,100,100,83 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  2438. K7N161801A Samsung - 1Mx18-Bit Pipelined NtRAM™The K7N163601A and K7N161801A are 18,874,368-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
  2439. K7N161801A Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2440. K7N161801A-FC13 Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2441. K7N161801A-FC16 Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2442. K7N161801A-FC20 Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2443. K7N161801A-FC22 Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2444. K7N161801A-FC25 Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2445. K7N161801A-FI13 Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2446. K7N161801A-FI16 Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2447. K7N161801A-FI20 Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2448. K7N161801A-FI22 Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2449. K7N161801A-FI25 Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2450. K7N161801A-Q(F)C(I)13 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2451. K7N161801A-Q(F)C(I)16 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2452. K7N161801A-Q(F)C(I)20 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2453. K7N161801A-Q(F)C(I)25 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2454. K7N161801A-Q(F)C(I)25/20/16/13 Samsung - 1Mx18-Bit Pipelined NtRAM™The K7N163601A and K7N161801A are 18,874,368-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
  2455. K7N161801A-QC13 Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2456. K7N161801A-QC16 Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2457. K7N161801A-QC20 Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2458. K7N161801A-QC22 Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2459. K7N161801A-QC25 Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2460. K7N161801A-QI13 Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2461. K7N161801A-QI16 Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2462. K7N161801A-QI20 Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2463. K7N161801A-QI22 Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2464. K7N161801A-QI25 Samsung - K7N161801A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2465. K7N161801-FC13 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2466. K7N161801-FC16 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2467. K7N161801-FC20 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2468. K7N161801-FC25 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2469. K7N161801-FI13 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2470. K7N161801-FI16 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2471. K7N161801-FI20 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2472. K7N161801-FI25 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2473. K7N161801M Samsung - 512kx36 & 1mx18-bit Pipelined Ntram Tm
  2474. K7N161801-QC13 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2475. K7N161801-QC16 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2476. K7N161801-QC20 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2477. K7N161801-QC25 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2478. K7N161801-QI13 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2479. K7N161801-QI16 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2480. K7N161801-QI20 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2481. K7N161801-QI25 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2482. K7N161831B Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2483. K7N161831B-Q(F,E,P)C(I)25/16 Samsung - 1Mx18-Bit Pipelined NtRAM™The K7N161831B is 18,874,368-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
  2484. K7N161831B-QC16 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2485. K7N161831B-QFCI25 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2486. K7N161845A Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2487. K7N161845A-FC13 Samsung - K7N161845A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2488. K7N161845A-FC16 Samsung - K7N161845A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2489. K7N161845A-FC20 Samsung - K7N161845A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2490. K7N161845A-FC22 Samsung - K7N161845A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2491. K7N161845A-FC25 Samsung - K7N161845A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2492. K7N161845A-FI13 Samsung - K7N161845A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2493. K7N161845A-FI16 Samsung - K7N161845A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2494. K7N161845A-FI20 Samsung - K7N161845A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2495. K7N161845A-FI22 Samsung - K7N161845A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2496. K7N161845A-FI25 Samsung - K7N161845A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2497. K7N161845A-Q(F)C(I)13 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2498. K7N161845A-Q(F)C(I)16 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2499. K7N161845A-Q(F)C(I)20 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2500. K7N161845A-Q(F)C(I)25 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2501. K7N161845A-QC13 Samsung - K7N161845A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2502. K7N161845A-QC16 Samsung - K7N161845A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2503. K7N161845A-QC20 Samsung - K7N161845A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2504. K7N161845A-QC22 Samsung - K7N161845A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2505. K7N161845A-QC25 Samsung - K7N161845A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2506. K7N161845A-QI13 Samsung - K7N161845A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2507. K7N161845A-QI16 Samsung - K7N161845A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2508. K7N161845A-QI20 Samsung - K7N161845A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2509. K7N161845A-QI22 Samsung - K7N161845A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2510. K7N161845A-QI25 Samsung - K7N161845A 1Mx18-Bit Pipelined NtRAM™ ; Organization = 1Mx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2511. K7N161845-FC13 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2512. K7N161845-FC16 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2513. K7N161845-FC20 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2514. K7N161845-FC25 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2515. K7N161845-FI13 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2516. K7N161845-FI16 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2517. K7N161845-FI20 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2518. K7N161845-FI25 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2519. K7N161845M Samsung - 512kx36 & 1mx18-bit Pipelined Ntramtm
  2520. K7N161845-QC13 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2521. K7N161845-QC16 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2522. K7N161845-QC20 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2523. K7N161845-QC25 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2524. K7N161845-QI13 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2525. K7N161845-QI16 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2526. K7N161845-QI20 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2527. K7N161845-QI25 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2528. K7N163201A Samsung - K7N163201A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2529. K7N163201A-QC13 Samsung - K7N163201A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2530. K7N163201A-QC16 Samsung - K7N163201A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2531. K7N163201A-QC20 Samsung - K7N163201A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2532. K7N163201A-QC22 Samsung - K7N163201A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2533. K7N163201A-QC25 Samsung - K7N163201A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2534. K7N163201A-QI13 Samsung - K7N163201A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2535. K7N163201A-QI16 Samsung - K7N163201A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2536. K7N163201A-QI20 Samsung - K7N163201A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2537. K7N163201A-QI22 Samsung - K7N163201A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2538. K7N163201A-QI25 Samsung - K7N163201A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2539. K7N163245A Samsung - K7N163245A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2540. K7N163245A-QC13 Samsung - K7N163245A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2541. K7N163245A-QC16 Samsung - K7N163245A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2542. K7N163245A-QC20 Samsung - K7N163245A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2543. K7N163245A-QC22 Samsung - K7N163245A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2544. K7N163245A-QC25 Samsung - K7N163245A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2545. K7N163245A-QI13 Samsung - K7N163245A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2546. K7N163245A-QI16 Samsung - K7N163245A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2547. K7N163245A-QI20 Samsung - K7N163245A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2548. K7N163245A-QI22 Samsung - K7N163245A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2549. K7N163245A-QI25 Samsung - K7N163245A 512Kx32-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2550. K7N163601 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2551. K7N163601A Samsung - 512Kx36-Bit Pipelined NtRAM™The K7N163601A and K7N161801A are 18,874,368-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.Burst order control must be tied High or Low.
  2552. K7N163601A Samsung - K7N163601A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2553. K7N163601A-Q(F)C(I)13 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2554. K7N163601A-Q(F)C(I)16 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2555. K7N163601A-Q(F)C(I)20 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2556. K7N163601A-Q(F)C(I)25 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2557. K7N163601A-Q(F)C(I)25/20/16/13 Samsung - 512Kx36-Bit Pipelined NtRAM™The K7N163601A and K7N161801A are 18,874,368-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.Burst order control must be tied High or Low.
  2558. K7N163601A-QC13 Samsung - K7N163601A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2559. K7N163601A-QC16 Samsung - K7N163601A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2560. K7N163601A-QC20 Samsung - K7N163601A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2561. K7N163601A-QC22 Samsung - K7N163601A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2562. K7N163601A-QC25 Samsung - K7N163601A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2563. K7N163601A-QI13 Samsung - K7N163601A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2564. K7N163601A-QI16 Samsung - K7N163601A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2565. K7N163601A-QI20 Samsung - K7N163601A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2566. K7N163601A-QI22 Samsung - K7N163601A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2567. K7N163601A-QI25 Samsung - K7N163601A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2568. K7N163601-FC13 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2569. K7N163601-FC16 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2570. K7N163601-FC20 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2571. K7N163601-FC25 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2572. K7N163601-FI13 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2573. K7N163601-FI16 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2574. K7N163601-FI20 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2575. K7N163601-FI25 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2576. K7N163601M Samsung - 512Kx36 & 1Mx18-Bit Pipelined NtRAM TM
  2577. K7N163601-QC13 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2578. K7N163601-QC16 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2579. K7N163601-QC20 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2580. K7N163601-QC25 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2581. K7N163601-QI13 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2582. K7N163601-QI16 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2583. K7N163601-QI20 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2584. K7N163601-QI25 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2585. K7N163631B Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2586. K7N163631B-Q(F,E,P)C(I)25/16 Samsung - 512Kx36-Bit Pipelined NtRAM™The K7N163631B is 18,874,368-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
  2587. K7N163631B-QC16 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2588. K7N163631B-QFCI25 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2589. K7N163645A Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2590. K7N163645A-FC13 Samsung - K7N163645A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2591. K7N163645A-FC16 Samsung - K7N163645A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2592. K7N163645A-FC20 Samsung - K7N163645A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2593. K7N163645A-FC22 Samsung - K7N163645A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2594. K7N163645A-FC25 Samsung - K7N163645A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2595. K7N163645A-FI13 Samsung - K7N163645A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2596. K7N163645A-FI16 Samsung - K7N163645A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2597. K7N163645A-FI20 Samsung - K7N163645A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2598. K7N163645A-FI22 Samsung - K7N163645A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2599. K7N163645A-FI25 Samsung - K7N163645A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2600. K7N163645A-Q(F)C(I)13 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2601. K7N163645A-Q(F)C(I)16 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2602. K7N163645A-Q(F)C(I)20 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2603. K7N163645A-Q(F)C(I)25 Samsung - 512Kx36 & 1Mx18 Pipelined NtRAM
  2604. K7N163645A-Q(F)C(I)25/20/16/13 Samsung - 512Kx36-Bit Pipelined NtRAM™The K7N163645A and K7N161845A are 18,874,368-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
  2605. K7N163645A-QC13 Samsung - K7N163645A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2606. K7N163645A-QC16 Samsung - K7N163645A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2607. K7N163645A-QC20 Samsung - K7N163645A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2608. K7N163645A-QC22 Samsung - K7N163645A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2609. K7N163645A-QC25 Samsung - K7N163645A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2610. K7N163645A-QI13 Samsung - K7N163645A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2611. K7N163645A-QI16 Samsung - K7N163645A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2612. K7N163645A-QI20 Samsung - K7N163645A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2613. K7N163645A-QI22 Samsung - K7N163645A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2614. K7N163645A-QI25 Samsung - K7N163645A 512Kx36-Bit Pipelined NtRAM™ ; Organization = 512Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 4.0,4.4,5.0,6.0,7.5 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,165FBGA ; Production Status = Mass Production ; Comments = Pipe
  2615. K7N163645-FC13 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2616. K7N163645-FC16 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2617. K7N163645-FC20 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2618. K7N163645-FC25 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2619. K7N163645-FI13 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2620. K7N163645-FI16 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2621. K7N163645-FI20 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2622. K7N163645-FI25 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2623. K7N163645M Samsung - 512Kx36 & 1Mx18-Bit Pipelined NtRAMTM
  2624. K7N163645-QC13 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2625. K7N163645-QC16 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2626. K7N163645-QC20 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2627. K7N163645-QC25 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2628. K7N163645-QI13 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2629. K7N163645-QI16 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2630. K7N163645-QI20 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2631. K7N163645-QI25 Samsung - 512Kx36 & 1Mx18-Bit Flow Through NtRAM
  2632. K7N167245A Samsung - K7N167245A 256Kx72-Bit Pipelined NtRAM™ ; Organization = 256Kx72 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 209BGA ; Production Status = Mass Production ; Comments = Pipe
  2633. K7N167245A-HC13 Samsung - K7N167245A 256Kx72-Bit Pipelined NtRAM™ ; Organization = 256Kx72 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 209BGA ; Production Status = Mass Production ; Comments = Pipe
  2634. K7N167245A-HC16 Samsung - K7N167245A 256Kx72-Bit Pipelined NtRAM™ ; Organization = 256Kx72 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 209BGA ; Production Status = Mass Production ; Comments = Pipe
  2635. K7N167245A-HC20 Samsung - K7N167245A 256Kx72-Bit Pipelined NtRAM™ ; Organization = 256Kx72 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 209BGA ; Production Status = Mass Production ; Comments = Pipe
  2636. K7N167245A-HC22 Samsung - K7N167245A 256Kx72-Bit Pipelined NtRAM™ ; Organization = 256Kx72 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 209BGA ; Production Status = Mass Production ; Comments = Pipe
  2637. K7N167245A-HC25 Samsung - K7N167245A 256Kx72-Bit Pipelined NtRAM™ ; Organization = 256Kx72 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,133 ; I/o Voltage(V) = 2.5 ; Package = 209BGA ; Production Status = Mass Production ; Comments = Pipe
  2638. K7N167249A Samsung -
  2639. K7N321801M Samsung - 1Mx36 & 2Mx18-Bit Pipelined NtRAM
  2640. K7N321801M-FC13 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2641. K7N321801M-FC16 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2642. K7N321801M-FC20 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2643. K7N321801M-FC25 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2644. K7N321801M-Q(F)C25/20/16/13 Samsung - 2Mx18-Bit Pipelined NtRAM™The K7N323601M and K7N321801M are 37,748,736-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
  2645. K7N321801M-QC13 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2646. K7N321801M-QC16 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2647. K7N321801M-QC20 Samsung - 1Mx36 & 2Mx18 Flow-Through NtRAM
  2648. K7N321801M-QC20 Samsung - 1Mx36 & 2Mx18-Bit Pipelined NtRAM
  2649. K7N321801M-QC20 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2650. K7N321801M-QC25 Samsung - 1Mx36 & 2Mx18 Flow-Through NtRAM
  2651. K7N321801M-QC25 Samsung - 1Mx36 & 2Mx18-Bit Pipelined NtRAM
  2652. K7N321801M-QC25 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2653. K7N321845M Samsung - 2Mx18-Bit Pipelined NtRAM™The K7N323645M and K7N321845M are 37,748,736-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
  2654. K7N321845M Samsung - K7N321845M 2Mx18-Bit Pipelined NtRAM™ ; Organization = 2Mx18 ; Operating Mode = Piplelined ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,3.8,4.2 ; Speed-tcyc (MHz) = 250,225,200,167,150,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,119BGA,165FBGA ; Production Status = Mass Production ; Comments = -
  2655. K7N321845M-FC13 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2656. K7N321845M-FC16 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2657. K7N321845M-FC20 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2658. K7N321845M-FC25 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2659. K7N321845M-Q(F)C25/20/16/13 Samsung - 2Mx18-Bit Pipelined NtRAM™The K7N323645M and K7N321845M are 37,748,736-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
  2660. K7N321845M-QC13 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2661. K7N321845M-QC16 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2662. K7N321845M-QC20 Samsung - 1Mx36 & 2Mx18 Flow-Through NtRAM
  2663. K7N321845M-QC20 Samsung - 1Mx36 & 2Mx18-Bit Pipelined NtRAM
  2664. K7N321845M-QC20 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2665. K7N321845M-QC25 Samsung - 1Mx36 & 2Mx18 Flow-Through NtRAM
  2666. K7N321845M-QC25 Samsung - 1Mx36 & 2Mx18-Bit Pipelined NtRAM
  2667. K7N321845M-QC25 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2668. K7N323601M Samsung - 1Mx36 & 2Mx18-Bit Pipelined NtRAM
  2669. K7N323601M-FC13 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2670. K7N323601M-FC16 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2671. K7N323601M-FC20 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2672. K7N323601M-FC25 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2673. K7N323601M-Q(F)C25/20/16/1 Samsung - 1Mx36 Bit Pipelined NtRAM™The K7N323601M and K7N321801M are 37,748,736-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
  2674. K7N323601M-QC13 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2675. K7N323601M-QC16 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2676. K7N323601M-QC20 Samsung - 1Mx36 & 2Mx18 Flow-Through NtRAM
  2677. K7N323601M-QC20 Samsung - 1Mx36 & 2Mx18-Bit Pipelined NtRAM
  2678. K7N323601M-QC20 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2679. K7N323601M-QC25 Samsung - 1Mx36 & 2Mx18 Flow-Through NtRAM
  2680. K7N323601M-QC25 Samsung - 1Mx36 & 2Mx18-Bit Pipelined NtRAM
  2681. K7N323601M-QC25 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2682. K7N323645M Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2683. K7N323645M-FC13 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2684. K7N323645M-FC16 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2685. K7N323645M-FC20 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2686. K7N323645M-FC25 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2687. K7N323645M-Q(F)C25/20/16/13 Samsung - 1Mx36-Bit Pipelined NtRAM™The K7N323645M and K7N321845M are 37,748,736-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
  2688. K7N323645M-QC13 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2689. K7N323645M-QC16 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2690. K7N323645M-QC20 Samsung - 1Mx36 & 2Mx18 Flow-Through NtRAM
  2691. K7N323645M-QC20 Samsung - 1Mx36 & 2Mx18-Bit Pipelined NtRAM
  2692. K7N323645M-QC20 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2693. K7N323645M-QC25 Samsung - 1Mx36 & 2Mx18 Flow-Through NtRAM
  2694. K7N323645M-QC25 Samsung - 1Mx36 & 2Mx18-Bit Pipelined NtRAM
  2695. K7N323645M-QC25 Samsung - 1Mx36 & 2Mx18 Pipelined NtRAM
  2696. K7N323645M-QC25/20/16/13 Samsung - 1Mx36-Bit Pipelined NtRAM™The K7N323645M and K7N321845M are 37,748,736-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
  2697. K7N327245M Samsung - K7N327245M 512K X 72-Bit Pipelined NtRAM™ ; Organization = 512Kx72 ; Operating Mode = Pipelined ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.6,2.8,3.2,3.5,3.8,4.2 ; Speed-tcyc (MHz) = 250,200,167 ; I/o Voltage(V) = 2.5 ; Package = 209BGA ; Production Status = Mass Production ; Comments = -
  2698. K7N327249M Samsung -
  2699. K7N401801A Samsung - 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
  2700. K7N401801B Samsung - 128kx36 & 256kx18 Pipelined Ntram
  2701. K7N401801B-QC13 Samsung - 128Kx36 & 256Kx18 Pipelined NtRAM
  2702. K7N401801B-QC13 Samsung - 128Kx36 & 256Kx18 Pipelined NtRAMTM
  2703. K7N401801B-QC16 Samsung - K7N401801B 256Kx18-Bit Pipelined NtRAM™ ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2704. K7N401801B-QI13 Samsung - K7N401801B 256Kx18-Bit Pipelined NtRAM™ ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2705. K7N401801B-QI16 Samsung - K7N401801B 256Kx18-Bit Pipelined NtRAM™ ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2706. K7N401801M Samsung - 128kx36 & 256kx18 Pipelined Ntram-tm
  2707. K7N401809A Samsung - K7N401801M 256Kx18-Bit Pipelined NtRAM™ ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.0 ; Speed-tcyc (MHz) = 250,225,200,183 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  2708. K7N401809B Samsung - 128Kx36 & 256Kx18 Pipelined NtRAMTM
  2709. K7N401809B-QC20 Samsung - 128Kx36 & 256Kx18 Pipelined NtRAM
  2710. K7N401809B-QC20 Samsung - 128kx36 & 256kx18 Pipelined Ntramtm
  2711. K7N401809B-QC22 Samsung - K7N401809B 256Kx18-Bit Pipelined NtRAM™ ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.0 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2712. K7N401809B-QC25 Samsung - K7N401809B 256Kx18-Bit Pipelined NtRAM™ ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.0 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2713. K7N401809B-QI20 Samsung - K7N401809B 256Kx18-Bit Pipelined NtRAM™ ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.0 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2714. K7N401809B-QI22 Samsung - K7N401809B 256Kx18-Bit Pipelined NtRAM™ ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.0 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2715. K7N401809B-QI25 Samsung - K7N401809B 256Kx18-Bit Pipelined NtRAM™ ; Organization = 256Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.0 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2716. K7N403201B Samsung - K7N403201B 128Kx32-Bit Pipelined NtRAM™ ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2717. K7N403201B-QC13 Samsung - K7N403201B 128Kx32-Bit Pipelined NtRAM™ ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2718. K7N403201B-QC16 Samsung - K7N403201B 128Kx32-Bit Pipelined NtRAM™ ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2719. K7N403201B-QI13 Samsung - K7N403201B 128Kx32-Bit Pipelined NtRAM™ ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2720. K7N403201B-QI16 Samsung - K7N403201B 128Kx32-Bit Pipelined NtRAM™ ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2721. K7N403209B Samsung - K7N403209B 128Kx32-Bit Pipelined NtRAM™ ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.0 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2722. K7N403209B-QC20 Samsung - K7N403209B 128Kx32-Bit Pipelined NtRAM™ ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.0 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2723. K7N403209B-QC22 Samsung - K7N403209B 128Kx32-Bit Pipelined NtRAM™ ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.0 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2724. K7N403209B-QC25 Samsung - K7N403209B 128Kx32-Bit Pipelined NtRAM™ ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.0 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2725. K7N403209B-QI20 Samsung - K7N403209B 128Kx32-Bit Pipelined NtRAM™ ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.0 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2726. K7N403209B-QI22 Samsung - K7N403209B 128Kx32-Bit Pipelined NtRAM™ ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.0 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2727. K7N403209B-QI25 Samsung - K7N403209B 128Kx32-Bit Pipelined NtRAM™ ; Organization = 128Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.0 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2728. K7N403601A Samsung - 128kx36 & 256kx18-bit Pipelined Ntramtm
  2729. K7N403601B Samsung - 128Kx36 & 256Kx18 Pipelined NtRAM
  2730. K7N403601B-QC13 Samsung - 128Kx36 & 256Kx18 Pipelined NtRAM
  2731. K7N403601B-QC13 Samsung - 128Kx36 & 256Kx18 Pipelined NtRAMTM
  2732. K7N403601B-QC16 Samsung - K7N403601B 128Kx36-Bit Pipelined NtRAM™ ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = Pipe
  2733. K7N403601B-QI13 Samsung - K7N403601B 128Kx36-Bit Pipelined NtRAM™ ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = Pipe
  2734. K7N403601B-QI16 Samsung - K7N403601B 128Kx36-Bit Pipelined NtRAM™ ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = Pipe
  2735. K7N403601M Samsung - 128Kx36 & 256Kx18 Pipelined NtRAM-TM
  2736. K7N403609A Samsung - K7N403609A 128Kx36-Bit Pipelined NtRAM™ ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.0 ; Speed-tcyc (MHz) = 250,225,200,183 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  2737. K7N403609B Samsung - 128Kx36 & 256Kx18 Pipelined NtRAMTM
  2738. K7N403609B-QC20 Samsung - 128Kx36 & 256Kx18 Pipelined NtRAM
  2739. K7N403609B-QC20 Samsung - 128Kx36 & 256Kx18 Pipelined NtRAMTM
  2740. K7N403609B-QC22 Samsung - K7N403609B 128Kx36-Bit Pipelined NtRAM™ ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.0 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2741. K7N403609B-QC25 Samsung - K7N403609B 128Kx36-Bit Pipelined NtRAM™ ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.0 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2742. K7N403609B-QI20 Samsung - K7N403609B 128Kx36-Bit Pipelined NtRAM™ ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.0 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2743. K7N403609B-QI22 Samsung - K7N403609B 128Kx36-Bit Pipelined NtRAM™ ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.0 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2744. K7N403609B-QI25 Samsung - K7N403609B 128Kx36-Bit Pipelined NtRAM™ ; Organization = 128Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.4,2.6,2.8,3.0 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2745. K7N641831M Samsung - K7N641831M ; Organization = 4Mx18 ; Operating Mode = - ; VDD(V) = 1.8,2.5,3.3 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,167 ; I/o Voltage(V) = - ; Package = 100TQGP,119BGA,165FBGA ; Production Status = Engineering Sample(4Q,\'04) ; Comments = -
  2746. K7N641831M-FC16 Samsung - K7N641831M ; Organization = 4Mx18 ; Operating Mode = - ; VDD(V) = 1.8,2.5,3.3 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,167 ; I/o Voltage(V) = - ; Package = 100TQGP,119BGA,165FBGA ; Production Status = Engineering Sample(4Q,\'04) ; Comments = -
  2747. K7N641831M-FC25 Samsung - K7N641831M ; Organization = 4Mx18 ; Operating Mode = - ; VDD(V) = 1.8,2.5,3.3 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,167 ; I/o Voltage(V) = - ; Package = 100TQGP,119BGA,165FBGA ; Production Status = Engineering Sample(4Q,\'04) ; Comments = -
  2748. K7N641831M-HC16 Samsung - K7N641831M ; Organization = 4Mx18 ; Operating Mode = - ; VDD(V) = 1.8,2.5,3.3 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,167 ; I/o Voltage(V) = - ; Package = 100TQGP,119BGA,165FBGA ; Production Status = Engineering Sample(4Q,\'04) ; Comments = -
  2749. K7N641831M-HC25 Samsung - K7N641831M ; Organization = 4Mx18 ; Operating Mode = - ; VDD(V) = 1.8,2.5,3.3 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,167 ; I/o Voltage(V) = - ; Package = 100TQGP,119BGA,165FBGA ; Production Status = Engineering Sample(4Q,\'04) ; Comments = -
  2750. K7N641831M-QC16 Samsung - K7N641831M ; Organization = 4Mx18 ; Operating Mode = - ; VDD(V) = 1.8,2.5,3.3 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,167 ; I/o Voltage(V) = - ; Package = 100TQGP,119BGA,165FBGA ; Production Status = Engineering Sample(4Q,\'04) ; Comments = -
  2751. K7N641831M-QC25 Samsung - K7N641831M ; Organization = 4Mx18 ; Operating Mode = - ; VDD(V) = 1.8,2.5,3.3 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,167 ; I/o Voltage(V) = - ; Package = 100TQGP,119BGA,165FBGA ; Production Status = Engineering Sample(4Q,\'04) ; Comments = -
  2752. K7N641845M Samsung - 2mx36 & 4mx18 Pipelined Ntram
  2753. K7N641845M-FC16 Samsung - 2Mx36 & 4Mx18 Pipelined NtRAM
  2754. K7N641845M-FC25 Samsung - 2Mx36 & 4Mx18 Pipelined NtRAM
  2755. K7N641845M-Q(F)C25/16 Samsung - 4Mx18Bit Pipelined NtRAM™The K7N641845M is 75,497,472-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
  2756. K7N641845M-QC16 Samsung - 2Mx36 & 4Mx18 Pipelined NtRAM
  2757. K7N641845M-QC25 Samsung - 2Mx36 & 4Mx18 Pipelined NtRAM
  2758. K7N643631M Samsung - K7N643631M ; Organization = 2Mx36 ; Operating Mode = - ; VDD(V) = 1.8,2.5,3.3 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,167 ; I/o Voltage(V) = - ; Package = 100TQGP,119BGA,165FBGA ; Production Status = Engineering Sample(4Q,\'04) ; Comments = -
  2759. K7N643631M-FC16 Samsung - K7N643631M ; Organization = 2Mx36 ; Operating Mode = - ; VDD(V) = 1.8,2.5,3.3 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,167 ; I/o Voltage(V) = - ; Package = 100TQGP,119BGA,165FBGA ; Production Status = Engineering Sample(4Q,\'04) ; Comments = -
  2760. K7N643631M-FC25 Samsung - K7N643631M ; Organization = 2Mx36 ; Operating Mode = - ; VDD(V) = 1.8,2.5,3.3 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,167 ; I/o Voltage(V) = - ; Package = 100TQGP,119BGA,165FBGA ; Production Status = Engineering Sample(4Q,\'04) ; Comments = -
  2761. K7N643631M-HC16 Samsung - K7N643631M ; Organization = 2Mx36 ; Operating Mode = - ; VDD(V) = 1.8,2.5,3.3 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,167 ; I/o Voltage(V) = - ; Package = 100TQGP,119BGA,165FBGA ; Production Status = Engineering Sample(4Q,\'04) ; Comments = -
  2762. K7N643631M-HC25 Samsung - K7N643631M ; Organization = 2Mx36 ; Operating Mode = - ; VDD(V) = 1.8,2.5,3.3 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,167 ; I/o Voltage(V) = - ; Package = 100TQGP,119BGA,165FBGA ; Production Status = Engineering Sample(4Q,\'04) ; Comments = -
  2763. K7N643631M-QC16 Samsung - K7N643631M ; Organization = 2Mx36 ; Operating Mode = - ; VDD(V) = 1.8,2.5,3.3 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,167 ; I/o Voltage(V) = - ; Package = 100TQGP,119BGA,165FBGA ; Production Status = Engineering Sample(4Q,\'04) ; Comments = -
  2764. K7N643631M-QC25 Samsung - K7N643631M ; Organization = 2Mx36 ; Operating Mode = - ; VDD(V) = 1.8,2.5,3.3 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,167 ; I/o Voltage(V) = - ; Package = 100TQGP,119BGA,165FBGA ; Production Status = Engineering Sample(4Q,\'04) ; Comments = -
  2765. K7N643645M Samsung - 2Mx36 & 4Mx18 Pipelined NtRAM
  2766. K7N643645M-FC16 Samsung - 2Mx36 & 4Mx18 Pipelined NtRAM
  2767. K7N643645M-FC25 Samsung - 2Mx36 & 4Mx18 Pipelined NtRAM
  2768. K7N643645M-Q(F)C25/16 Samsung - 2Mx36Bit Pipelined NtRAM™The K7N643645M is 75,497,472-bits Synchronous Static SRAMs.The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied High or Low.
  2769. K7N643645M-QC16 Samsung - 2Mx36 & 4Mx18 Pipelined NtRAM
  2770. K7N643645M-QC25 Samsung - 2Mx36 & 4Mx18 Pipelined NtRAM
  2771. K7N801801A Samsung - K7N801801A 512Kx18-Bit Pipelined NtRAM(TM) ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.8,3.2,3.3 ; Speed-tcyc (MHz) = 225,200,183 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA ; Production Status = Eol ; Comments = Pipe
  2772. K7N801801B Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAM
  2773. K7N801801B-QC13 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAM
  2774. K7N801801B-QC16 Samsung - 256Kx36 & 512Kx18-Bit Flow Through NtRAM
  2775. K7N801801B-QC16 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAM
  2776. K7N801801B-QC16 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
  2777. K7N801801B-QI13 Samsung - K7N801801B 256Kx36 &256Kx32 & 512Kx18 Pipelined NtRAM(TM) ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = Pipe
  2778. K7N801801B-QI16 Samsung - K7N801801B 256Kx36 &256Kx32 & 512Kx18 Pipelined NtRAM(TM) ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = Pipe
  2779. K7N801801M Samsung - K7N801801M 512Kx18 Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.2,3.5,3.8,4.2,5.0 ; Speed-tcyc (MHz) = 200,167,150,133,100 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  2780. K7N801809A Samsung - K7N801809A 512K X 18Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2,5.0 ; Speed-tcyc (MHz) = 167,150,133,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA ; Production Status = Eol ; Comments = -
  2781. K7N801809B Samsung - K7N801809B 256Kx36 & 256Kx32 & 512Kx18 Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = Pipe
  2782. K7N801809B-QC20 Samsung - K7N801809B 256Kx36 & 256Kx32 & 512Kx18 Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = Pipe
  2783. K7N801809B-QC25 Samsung - 256Kx36 & 512Kx18-Bit Flow Through NtRAM
  2784. K7N801809B-QC25 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAM
  2785. K7N801809B-QC25 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
  2786. K7N801809B-QI20 Samsung - K7N801809B 256Kx36 & 256Kx32 & 512Kx18 Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = Pipe
  2787. K7N801809B-QI25 Samsung - K7N801809B 256Kx36 & 256Kx32 & 512Kx18 Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = Pipe
  2788. K7N801845A Samsung - K7N801845A 512Kx18-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 3.5,3.8,4.2,5.0 ; Speed-tcyc (MHz) = 167,150,133,100 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,119BGA ; Production Status = Eol ; Comments = -
  2789. K7N801845B Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
  2790. K7N801845B-QC13 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAM
  2791. K7N801845B-QC16 Samsung - 256Kx36 & 512Kx18-Bit Flow Through NtRAM
  2792. K7N801845B-QC16 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAM
  2793. K7N801845B-QC16 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
  2794. K7N801845B-QI13 Samsung - K7N801845B 256Kx36 & 512Kx18-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = Pipe
  2795. K7N801845B-QI16 Samsung - K7N801845B 256Kx36 & 512Kx18-Bit Pipelined NtRAM™ ; Organization = 512Kx18 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = Pipe
  2796. K7N801845M Samsung - 256k X 36 & 512k X 18 Pipelined N-t Ram - Tm
  2797. K7N801849B Samsung - K7N801849B 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM™ ; Organization = 512Kx18 ; Operating Mode = Nt-pp ; VDD(V) = 2.5 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,200 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Product ; Comments = -
  2798. K7N801849B-QC20 Samsung - K7N801849B 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM™ ; Organization = 512Kx18 ; Operating Mode = Nt-pp ; VDD(V) = 2.5 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,200 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Product ; Comments = -
  2799. K7N801849B-QC25 Samsung - 256Kx36 & 512Kx18-Bit Flow Through NtRAM
  2800. K7N801849B-QC25 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAM
  2801. K7N801849B-QC25 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
  2802. K7N801849B-QI20 Samsung - K7N801849B 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM™ ; Organization = 512Kx18 ; Operating Mode = Nt-pp ; VDD(V) = 2.5 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,200 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Product ; Comments = -
  2803. K7N801849B-QI25 Samsung - K7N801849B 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM™ ; Organization = 512Kx18 ; Operating Mode = Nt-pp ; VDD(V) = 2.5 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,200 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Product ; Comments = -
  2804. K7N803201B Samsung - K7N803201B 256Kx32 Pipelined NtRAM™ ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2805. K7N803201B-QC13 Samsung - K7N803201B 256Kx32 Pipelined NtRAM™ ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2806. K7N803201B-QC16 Samsung - K7N803201B 256Kx32 Pipelined NtRAM™ ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2807. K7N803201B-QI13 Samsung - K7N803201B 256Kx32 Pipelined NtRAM™ ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2808. K7N803201B-QI16 Samsung - K7N803201B 256Kx32 Pipelined NtRAM™ ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2809. K7N803209B Samsung - K7N803209B 256Kx32 Pipelined NtRAM™ ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2810. K7N803209B-QC20 Samsung - K7N803209B 256Kx32 Pipelined NtRAM™ ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2811. K7N803209B-QC25 Samsung - K7N803209B 256Kx32 Pipelined NtRAM™ ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2812. K7N803209B-QI20 Samsung - K7N803209B 256Kx32 Pipelined NtRAM™ ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2813. K7N803209B-QI25 Samsung - K7N803209B 256Kx32 Pipelined NtRAM™ ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2814. K7N803245B Samsung - K7N803245B 256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined NtRAM™ ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2815. K7N803245B-QC13 Samsung - K7N803245B 256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined NtRAM™ ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2816. K7N803245B-QC16 Samsung - K7N803245B 256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined NtRAM™ ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2817. K7N803245B-QI13 Samsung - K7N803245B 256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined NtRAM™ ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2818. K7N803245B-QI16 Samsung - K7N803245B 256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined NtRAM™ ; Organization = 256Kx32 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2819. K7N803249B Samsung - K7N803249B 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM™ ; Organization = 256Kx32 ; Operating Mode = Nt-pp ; VDD(V) = 2.5 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,200 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Product ; Comments = -
  2820. K7N803249B-QC20 Samsung - K7N803249B 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM™ ; Organization = 256Kx32 ; Operating Mode = Nt-pp ; VDD(V) = 2.5 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,200 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Product ; Comments = -
  2821. K7N803249B-QC25 Samsung - K7N803249B 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM™ ; Organization = 256Kx32 ; Operating Mode = Nt-pp ; VDD(V) = 2.5 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,200 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Product ; Comments = -
  2822. K7N803249B-QI20 Samsung - K7N803249B 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM™ ; Organization = 256Kx32 ; Operating Mode = Nt-pp ; VDD(V) = 2.5 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,200 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Product ; Comments = -
  2823. K7N803249B-QI25 Samsung - K7N803249B 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM™ ; Organization = 256Kx32 ; Operating Mode = Nt-pp ; VDD(V) = 2.5 ; Access Time-tCD(ns) = - ; Speed-tcyc (MHz) = 250,200 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Product ; Comments = -
  2824. K7N803601A Samsung - K7N803601A 256Kx36-Bit Pipelined NtRAM™ ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2,5.0 ; Speed-tcyc (MHz) = 167,150,133,100 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA ; Production Status = Mass Production ; Comments = -
  2825. K7N803601B Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAM
  2826. K7N803601B-QC13 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAM
  2827. K7N803601B-QC16 Samsung - 256Kx36 & 512Kx18-Bit Flow Through NtRAM
  2828. K7N803601B-QC16 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAM
  2829. K7N803601B-QC16 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
  2830. K7N803601B-QI13 Samsung - K7N803601B 256Kx36 &256Kx32 & 512Kx18 Pipelined NtRAM™ ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = Pipe
  2831. K7N803601B-QI16 Samsung - K7N803601B 256Kx36 &256Kx32 & 512Kx18 Pipelined NtRAM™ ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = Pipe
  2832. K7N803601M Samsung - K7N803601M 256Kx36 & 512Kx18 Pipelined NtRAM™ ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.2,3.5,3.8,4.2,5.0 ; Speed-tcyc (MHz) = 200,167,150,133,100 ; I/o Voltage(V) = 2.5,3.3 ; Package = 100TQFP ; Production Status = Eol ; Comments = -
  2833. K7N803609A Samsung - K7N803609A 256Kx36-Bit Pipelined NtRAM™ ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.8,3.2,3.3 ; Speed-tcyc (MHz) = 225,200,183 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP,119BGA ; Production Status = Mass Production ; Comments = -
  2834. K7N803609B Samsung - K7N803609B 256Kx36 Pipelined NtRAM™ ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2835. K7N803609B-QC20 Samsung - K7N803609B 256Kx36 Pipelined NtRAM™ ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2836. K7N803609B-QC25 Samsung - 256Kx36 & 512Kx18-Bit Flow Through NtRAM
  2837. K7N803609B-QC25 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAM
  2838. K7N803609B-QC25 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
  2839. K7N803609B-QI20 Samsung - K7N803609B 256Kx36 Pipelined NtRAM™ ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2840. K7N803609B-QI25 Samsung - K7N803609B 256Kx36 Pipelined NtRAM™ ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.6,2.8,3.2 ; Speed-tcyc (MHz) = 250,225,200 ; I/o Voltage(V) = 3.3,2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2841. K7N803645A Samsung - K7N803645A 256Kx36-Bit Pipelined NtRAM™ ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 3.5,3.8,4.2,5.0 ; Speed-tcyc (MHz) = 167,150,133,100 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,119BGA ; Production Status = Mass Production ; Comments = -
  2842. K7N803645B Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
  2843. K7N803645B-QC13 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAM
  2844. K7N803645B-QC16 Samsung - 256Kx36 & 512Kx18-Bit Flow Through NtRAM
  2845. K7N803645B-QC16 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAM
  2846. K7N803645B-QC16 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
  2847. K7N803645B-QI13 Samsung - K7N803645B 256Kx36 & 512Kx18-Bit Pipelined NtRAM™ ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2848. K7N803645B-QI16 Samsung - K7N803645B 256Kx36 & 512Kx18-Bit Pipelined NtRAM™ ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 3.5,3.8,4.2 ; Speed-tcyc (MHz) = 167,133 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2849. K7N803645M Samsung - 256K X 36 & 512K X 18 PIPELINED N-T RAM - TM
  2850. K7N803649A Samsung - K7N803649A 256Kx36Bit Pipelined NtRAM™ ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.8,3.2,3.3 ; Speed-tcyc (MHz) = 225,200,183 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP,119BGA ; Production Status = Mass Production ; Comments = Pipe
  2851. K7N803649B Samsung - K7N803649B 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM™ ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.6,2.8,3.2 ; Speed-tcyc (MHz) = 250,200 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2852. K7N803649B-QC20 Samsung - K7N803649B 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM™ ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.6,2.8,3.2 ; Speed-tcyc (MHz) = 250,200 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2853. K7N803649B-QC22 Samsung - K7N803649B 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM™ ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.6,2.8,3.2 ; Speed-tcyc (MHz) = 250,200 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2854. K7N803649B-QC25 Samsung - 256Kx36 & 512Kx18-Bit Flow Through NtRAM
  2855. K7N803649B-QC25 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAM
  2856. K7N803649B-QC25 Samsung - 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
  2857. K7N803649B-QI20 Samsung - K7N803649B 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM™ ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.6,2.8,3.2 ; Speed-tcyc (MHz) = 250,200 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2858. K7N803649B-QI22 Samsung - K7N803649B 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM™ ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.6,2.8,3.2 ; Speed-tcyc (MHz) = 250,200 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2859. K7N803649B-QI25 Samsung - K7N803649B 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM™ ; Organization = 256Kx36 ; Operating Mode = SPB ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.6,2.8,3.2 ; Speed-tcyc (MHz) = 250,200 ; I/o Voltage(V) = 2.5 ; Package = 100TQFP ; Production Status = Mass Production ; Comments = -
  2860. K7P161866A Samsung - K7P161866A 512K X 36 & 1M X 18 Synchronous Pipelined SRAM ; Organization = 1Mx18 ; Operating Mode = SP ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.5,1.6,2.0 ; Speed-tcyc (MHz) = 333,300,250 ; I/o Voltage(V) = 1.5(Max. 1.9) ; Package = 119BGA ; Production Status = Engineering Sample(Jun.\'03) ; Comments = MP(Sep.\'03)
  2861. K7P161866A-HC25 Samsung - K7P161866A 512K X 36 & 1M X 18 Synchronous Pipelined SRAM ; Organization = 1Mx18 ; Operating Mode = SP ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.5,1.6,2.0 ; Speed-tcyc (MHz) = 333,300,250 ; I/o Voltage(V) = 1.5(Max. 1.9) ; Package = 119BGA ; Production Status = Engineering Sample(Jun.\'03) ; Comments = MP(Sep.\'03)
  2862. K7P161866A-HC30 Samsung - K7P161866A 512K X 36 & 1M X 18 Synchronous Pipelined SRAM ; Organization = 1Mx18 ; Operating Mode = SP ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.5,1.6,2.0 ; Speed-tcyc (MHz) = 333,300,250 ; I/o Voltage(V) = 1.5(Max. 1.9) ; Package = 119BGA ; Production Status = Engineering Sample(Jun.\'03) ; Comments = MP(Sep.\'03)
  2863. K7P161866A-HC33 Samsung - K7P161866A 512K X 36 & 1M X 18 Synchronous Pipelined SRAM ; Organization = 1Mx18 ; Operating Mode = SP ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.5,1.6,2.0 ; Speed-tcyc (MHz) = 333,300,250 ; I/o Voltage(V) = 1.5(Max. 1.9) ; Package = 119BGA ; Production Status = Engineering Sample(Jun.\'03) ; Comments = MP(Sep.\'03)
  2864. K7P161866M Samsung - K7P161866M 512K X 36 & 1M X 18 Synchronous Pipelined SRAM ; Organization = 1Mx18 ; Operating Mode = SP ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.5,1.6,2.0 ; Speed-tcyc (MHz) = 333,300,250 ; I/o Voltage(V) = 1.5(Max. 1.9) ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2865. K7P161866M-HC25 Samsung - K7P161866M 512K X 36 & 1M X 18 Synchronous Pipelined SRAM ; Organization = 1Mx18 ; Operating Mode = SP ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.5,1.6,2.0 ; Speed-tcyc (MHz) = 333,300,250 ; I/o Voltage(V) = 1.5(Max. 1.9) ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2866. K7P161866M-HC30 Samsung - K7P161866M 512K X 36 & 1M X 18 Synchronous Pipelined SRAM ; Organization = 1Mx18 ; Operating Mode = SP ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.5,1.6,2.0 ; Speed-tcyc (MHz) = 333,300,250 ; I/o Voltage(V) = 1.5(Max. 1.9) ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2867. K7P161866M-HC33 Samsung - K7P161866M 512K X 36 & 1M X 18 Synchronous Pipelined SRAM ; Organization = 1Mx18 ; Operating Mode = SP ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.5,1.6,2.0 ; Speed-tcyc (MHz) = 333,300,250 ; I/o Voltage(V) = 1.5(Max. 1.9) ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2868. K7P163666A Samsung - K7P163666A 512K X 36 & 1M X 18 Synchronous Pipelined SRAM ; Organization = 512Kx36 ; Operating Mode = SP ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.5,1.6,2.0 ; Speed-tcyc (MHz) = 333,300,250 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2869. K7P163666A-HC25 Samsung - K7P163666A 512K X 36 & 1M X 18 Synchronous Pipelined SRAM ; Organization = 512Kx36 ; Operating Mode = SP ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.5,1.6,2.0 ; Speed-tcyc (MHz) = 333,300,250 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2870. K7P163666A-HC30 Samsung - K7P163666A 512K X 36 & 1M X 18 Synchronous Pipelined SRAM ; Organization = 512Kx36 ; Operating Mode = SP ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.5,1.6,2.0 ; Speed-tcyc (MHz) = 333,300,250 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2871. K7P163666A-HC33 Samsung - K7P163666A 512K X 36 & 1M X 18 Synchronous Pipelined SRAM ; Organization = 512Kx36 ; Operating Mode = SP ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.5,1.6,2.0 ; Speed-tcyc (MHz) = 333,300,250 ; I/o Voltage(V) = 1.5(Max 1.9) ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2872. K7P321866M Samsung - 1Mx36 & 2Mx18 SRAM
  2873. K7P321866M-H(G)C25 Samsung - 2Mx18 Synchronous Pipelined SRAM1M x 36 or 2M x 18 Organizations.2.5V Core/1.5V Output Power Supply (1.9V max VDDQ).HSTL Input and Output Levels.Differential, HSTL Clock Inputs K, /K.Synchronous Read and Write OperationRegistered Input and Registered OutputInternal Pipeline Latches to Support Late Write.Byte Write Capability(four byte write selects, one for each 9bits)Synchronous or Asynchronous Output Enable.Power Down Mode via ZZ Signal.Programmable Impedance Output Drivers.JTAG 1149.1 Compatible Test Acc
  2874. K7P321874C Samsung - 2Mx18 Synchronous Pipelined SRAMThe K7P321874C is 37,748,736 bit Synchronous Pipeline Mode SRAM.It is organized as 2,097,152 words of 18 bits and is implemented in SAMSUNG\'s advanced CMOS technology.Single differential HSTL level K clocks are used to initiate the read/write operation and all internal operations are self-timed.At the rising edge of K clock, All addresses, Write Enables, Synchronous Select and Data Ins are registered internally.Data outs are updated from output registers edge of the next ris
  2875. K7P321888M Samsung - 2Mx18 Synchronous Pipelined SRAM1M x 36 or 2M x 18 Organizations.1.8V VDD / 1.5V or 1.8V VDDQ.HSTL Input and Output Levels.Differential, HSTL Clock Inputs K, /K.Synchronous Read and Write OperationRegistered Input and Registered OutputInternal Pipeline Latches to Support Late Write.Byte Write Capability (four byte write selects, one for each 9bits)Synchronous or Asynchronous Output Enable.Power Down Mode via ZZ Signal.Programmable Impedance Output Drivers.JTAG Boundary Scan (subset of IEEE std. 1149.1).119
  2876. K7P321888M-H(G)C30 Samsung - 2Mx18 Synchronous Pipelined SRAM1M x 36 or 2M x 18 Organizations.1.8V VDD / 1.5V or 1.8V VDDQ.HSTL Input and Output Levels.Differential, HSTL Clock Inputs K, /K.Synchronous Read and Write OperationRegistered Input and Registered OutputInternal Pipeline Latches to Support Late Write.Byte Write Capability (four byte write selects, one for each 9bits)Synchronous or Asynchronous Output Enable.Power Down Mode via ZZ Signal.Programmable Impedance Output Drivers.JTAG Boundary Scan (subset of IEEE std. 1149.1).119
  2877. K7P323666M Samsung - 1Mx36 & 2Mx18 SRAM
  2878. K7P323666M-H(G)C30 Samsung - 1Mx36 Synchronous Pipelined SRAM1M x 36 or 2M x 18 Organizations.2.5V Core/1.5V Output Power Supply (1.9V max VDDQ).HSTL Input and Output Levels.Differential, HSTL Clock Inputs K, /K.Synchronous Read and Write OperationRegistered Input and Registered OutputInternal Pipeline Latches to Support Late Write.Byte Write Capability(four byte write selects, one for each 9bits)Synchronous or Asynchronous Output Enable.Power Down Mode via ZZ Signal.Programmable Impedance Output Drivers.JTAG 1149.1 Compatible Test Acc
  2879. K7P323666M-HC300 Samsung - 1Mx36 Synchronous Pipelined SRAM1M x 36 or 2M x 18 Organizations.2.5V Core/1.5V Output Power Supply (1.9V max VDDQ).HSTL Input and Output Levels.Differential, HSTL Clock Inputs K, /K.Synchronous Read and Write OperationRegistered Input and Registered OutputInternal Pipeline Latches to Support Late Write.Byte Write Capability(four byte write selects, one for each 9bits)Synchronous or Asynchronous Output Enable.Power Down Mode via ZZ Signal.Programmable Impedance Output Drivers.JTAG 1149.1 Compatible Test Acc
  2880. K7P323666M-HC30T Samsung - 1Mx36 Synchronous Pipelined SRAM1M x 36 or 2M x 18 Organizations.2.5V Core/1.5V Output Power Supply (1.9V max VDDQ).HSTL Input and Output Levels.Differential, HSTL Clock Inputs K, /K.Synchronous Read and Write OperationRegistered Input and Registered OutputInternal Pipeline Latches to Support Late Write.Byte Write Capability(four byte write selects, one for each 9bits)Synchronous or Asynchronous Output Enable.Power Down Mode via ZZ Signal.Programmable Impedance Output Drivers.JTAG 1149.1 Compatible Test Acc
  2881. K7P323674C Samsung - 1Mx36 Synchronous Pipelined SRAMThe K7P323674C is 37,748,736 bit Synchronous Pipeline Mode SRAM.It is organized as 1,048,576 words of 36 bits and is implemented in SAMSUNG\'s advanced CMOS technology.Single differential HSTL level K clocks are used to initiate the read/write operation and all internal operations are self-timed.At the rising edge of K clock, All addresses, Write Enables, Synchronous Select and Data Ins are registered internally.Data outs are updated from output registers edge of the next ris
  2882. K7P323674C-H(G)C25 Samsung - 2Mx18 Synchronous Pipelined SRAMThe K7P321874C is 37,748,736 bit Synchronous Pipeline Mode SRAM.It is organized as 2,097,152 words of 18 bits and is implemented in SAMSUNG\'s advanced CMOS technology.Single differential HSTL level K clocks are used to initiate the read/write operation and all internal operations are self-timed.At the rising edge of K clock, All addresses, Write Enables, Synchronous Select and Data Ins are registered internally.Data outs are updated from output registers edge of the next ris
  2883. K7P323674C-H(G)C30 Samsung - 1Mx36 Synchronous Pipelined SRAMThe K7P323674C is 37,748,736 bit Synchronous Pipeline Mode SRAM.It is organized as 1,048,576 words of 36 bits and is implemented in SAMSUNG\'s advanced CMOS technology.Single differential HSTL level K clocks are used to initiate the read/write operation and all internal operations are self-timed.At the rising edge of K clock, All addresses, Write Enables, Synchronous Select and Data Ins are registered internally.Data outs are updated from output registers edge of the next ris
  2884. K7P323688M Samsung - 1Mx36 Synchronous Pipelined SRAM1M x 36 or 2M x 18 Organizations.1.8V VDD / 1.5V or 1.8V VDDQ.HSTL Input and Output Levels.Differential, HSTL Clock Inputs K, /K.Synchronous Read and Write OperationRegistered Input and Registered OutputInternal Pipeline Latches to Support Late Write.Byte Write Capability (four byte write selects, one for each 9bits)Synchronous or Asynchronous Output Enable.Power Down Mode via ZZ Signal.Programmable Impedance Output Drivers.JTAG Boundary Scan (subset of IEEE std. 1149.1).119
  2885. K7P323688M-H(G)C25 Samsung - 1Mx36 Synchronous Pipelined SRAM1M x 36 or 2M x 18 Organizations.1.8V VDD / 1.5V or 1.8V VDDQ.HSTL Input and Output Levels.Differential, HSTL Clock Inputs K, /K.Synchronous Read and Write OperationRegistered Input and Registered OutputInternal Pipeline Latches to Support Late Write.Byte Write Capability (four byte write selects, one for each 9bits)Synchronous or Asynchronous Output Enable.Power Down Mode via ZZ Signal.Programmable Impedance Output Drivers.JTAG Boundary Scan (subset of IEEE std. 1149.1).119
  2886. K7P323688M-H(G)C30 Samsung - 1Mx36 Synchronous Pipelined SRAM1M x 36 or 2M x 18 Organizations.1.8V VDD / 1.5V or 1.8V VDDQ.HSTL Input and Output Levels.Differential, HSTL Clock Inputs K, /K.Synchronous Read and Write OperationRegistered Input and Registered OutputInternal Pipeline Latches to Support Late Write.Byte Write Capability (four byte write selects, one for each 9bits)Synchronous or Asynchronous Output Enable.Power Down Mode via ZZ Signal.Programmable Impedance Output Drivers.JTAG Boundary Scan (subset of IEEE std. 1149.1).119
  2887. K7P401811A Samsung - K7P401811A 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx18 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 1.8,1.9,2.0 ; Speed-tcyc (MHz) = 300,277,250 ; I/o Voltage(V) = 1.5 ; Package = 119BGA ; Production Status = Eol ; Comments = -
  2888. K7P401811A-H25 Samsung - K7P401811A 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx18 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 1.8,1.9,2.0 ; Speed-tcyc (MHz) = 300,277,250 ; I/o Voltage(V) = 1.5 ; Package = 119BGA ; Production Status = Eol ; Comments = -
  2889. K7P401811A-H27 Samsung - K7P401811A 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx18 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 1.8,1.9,2.0 ; Speed-tcyc (MHz) = 300,277,250 ; I/o Voltage(V) = 1.5 ; Package = 119BGA ; Production Status = Eol ; Comments = -
  2890. K7P401811A-H30 Samsung - K7P401811A 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx18 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 1.8,1.9,2.0 ; Speed-tcyc (MHz) = 300,277,250 ; I/o Voltage(V) = 1.5 ; Package = 119BGA ; Production Status = Eol ; Comments = -
  2891. K7P401811M Samsung - K7P401811M 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx18 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.5,3.0 ; Speed-tcyc (MHz) = 200,167 ; I/o Voltage(V) = 1.5 ; Package = 119BGA ; Production Status = Eol ; Comments = -
  2892. K7P401811M-H20 Samsung - K7P401811M 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx18 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.5,3.0 ; Speed-tcyc (MHz) = 200,167 ; I/o Voltage(V) = 1.5 ; Package = 119BGA ; Production Status = Eol ; Comments = -
  2893. K7P401822B Samsung - K7P401822B 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.5,2.7,3.0 ; Speed-tcyc (MHz) = 250,200,166 ; I/o Voltage(V) = 2.5/3.3 ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2894. K7P401822B-HC16 Samsung - 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
  2895. K7P401822B-HC20 Samsung - 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
  2896. K7P401822B-HC25 Samsung - 128kx36 & 256kx18 Synchronous Pipelined Sram
  2897. K7P401822M Samsung - K7P401822M 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx18 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.5,3.0,3.5 ; Speed-tcyc (MHz) = 200,167,143 ; I/o Voltage(V) = 2.5 ; Package = 119BGA ; Production Status = Eol ; Comments = -
  2898. K7P401822M-H16 Samsung - 128kx36 & 256kx18 Synchronous Pipelined Sram
  2899. K7P401822M-H19 Samsung - 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
  2900. K7P401822M-H20 Samsung - 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
  2901. K7P401823B Samsung - K7P401823B 128K X 36 & 256K X 18 Synchronous Pipelined SRAM ; Organization = 256Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.0,7.5 ; Speed-tcyc (MHz) = 167,154,143 ; I/o Voltage(V) = 2.5/3.3 ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2902. K7P401823B-H65 Samsung - K7P401823B 128K X 36 & 256K X 18 Synchronous Pipelined SRAM ; Organization = 256Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.0,7.5 ; Speed-tcyc (MHz) = 167,154,143 ; I/o Voltage(V) = 2.5/3.3 ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2903. K7P401823B-H70 Samsung - K7P401823B 128K X 36 & 256K X 18 Synchronous Pipelined SRAM ; Organization = 256Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.0,7.5 ; Speed-tcyc (MHz) = 167,154,143 ; I/o Voltage(V) = 2.5/3.3 ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2904. K7P401823B-H75 Samsung - K7P401823B 128K X 36 & 256K X 18 Synchronous Pipelined SRAM ; Organization = 256Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.0,7.5 ; Speed-tcyc (MHz) = 167,154,143 ; I/o Voltage(V) = 2.5/3.3 ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2905. K7P401823M Samsung - K7P401823M 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx18 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.0,7.5 ; Speed-tcyc (MHz) = 154,143,133 ; I/o Voltage(V) = 2.5 ; Package = 119 Bga ; Production Status = Eol ; Comments = -
  2906. K7P401823M-H65 Samsung - K7P401823M 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx18 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.0,7.5 ; Speed-tcyc (MHz) = 154,143,133 ; I/o Voltage(V) = 2.5 ; Package = 119 Bga ; Production Status = Eol ; Comments = -
  2907. K7P401823M-H70 Samsung - K7P401823M 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx18 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.0,7.5 ; Speed-tcyc (MHz) = 154,143,133 ; I/o Voltage(V) = 2.5 ; Package = 119 Bga ; Production Status = Eol ; Comments = -
  2908. K7P401823M-H75 Samsung - K7P401823M 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx18 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.0,7.5 ; Speed-tcyc (MHz) = 154,143,133 ; I/o Voltage(V) = 2.5 ; Package = 119 Bga ; Production Status = Eol ; Comments = -
  2909. K7P401866A Samsung - K7P401866A 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.8,1.9,2.0 ; Speed-tcyc (MHz) = 300,277,250 ; I/o Voltage(V) = 1.5 ; Package = 119-BGA ; Production Status = Eol ; Comments = -
  2910. K7P401866A-H25 Samsung - K7P401866A 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.8,1.9,2.0 ; Speed-tcyc (MHz) = 300,277,250 ; I/o Voltage(V) = 1.5 ; Package = 119-BGA ; Production Status = Eol ; Comments = -
  2911. K7P401866A-H27 Samsung - K7P401866A 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.8,1.9,2.0 ; Speed-tcyc (MHz) = 300,277,250 ; I/o Voltage(V) = 1.5 ; Package = 119-BGA ; Production Status = Eol ; Comments = -
  2912. K7P401866A-H30 Samsung - K7P401866A 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.8,1.9,2.0 ; Speed-tcyc (MHz) = 300,277,250 ; I/o Voltage(V) = 1.5 ; Package = 119-BGA ; Production Status = Eol ; Comments = -
  2913. K7P403611A Samsung - K7P403611A 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 128Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 1.8,1.9,2.0 ; Speed-tcyc (MHz) = 300,277,250 ; I/o Voltage(V) = 1.5 ; Package = 119-BGA ; Production Status = Eol ; Comments = -
  2914. K7P403611A-H25 Samsung - K7P403611A 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 128Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 1.8,1.9,2.0 ; Speed-tcyc (MHz) = 300,277,250 ; I/o Voltage(V) = 1.5 ; Package = 119-BGA ; Production Status = Eol ; Comments = -
  2915. K7P403611A-H27 Samsung - K7P403611A 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 128Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 1.8,1.9,2.0 ; Speed-tcyc (MHz) = 300,277,250 ; I/o Voltage(V) = 1.5 ; Package = 119-BGA ; Production Status = Eol ; Comments = -
  2916. K7P403611A-H30 Samsung - K7P403611A 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 128Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 1.8,1.9,2.0 ; Speed-tcyc (MHz) = 300,277,250 ; I/o Voltage(V) = 1.5 ; Package = 119-BGA ; Production Status = Eol ; Comments = -
  2917. K7P403611M Samsung - K7P403611M 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 128Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.5,3.0 ; Speed-tcyc (MHz) = 200,167 ; I/o Voltage(V) = 1.5 ; Package = 119BGA ; Production Status = Eol ; Comments = -
  2918. K7P403611M-H20 Samsung - K7P403611M 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 128Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 2.5,3.0 ; Speed-tcyc (MHz) = 200,167 ; I/o Voltage(V) = 1.5 ; Package = 119BGA ; Production Status = Eol ; Comments = -
  2919. K7P403622B Samsung - 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
  2920. K7P403622B-HC16 Samsung - 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
  2921. K7P403622B-HC20 Samsung - 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
  2922. K7P403622B-HC25 Samsung - 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
  2923. K7P403622M Samsung - 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
  2924. K7P403622M-H16 Samsung - 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
  2925. K7P403622M-H19 Samsung - 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
  2926. K7P403622M-H20 Samsung - 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
  2927. K7P403623B Samsung - K7P401823B 128K X 36 & 256K X 18 Synchronous Pipelined SRAM ; Organization = 128Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.0,7.5 ; Speed-tcyc (MHz) = 167,154,143 ; I/o Voltage(V) = 2.5/3.3 ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2928. K7P403623B-H65 Samsung - K7P401823B 128K X 36 & 256K X 18 Synchronous Pipelined SRAM ; Organization = 128Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.0,7.5 ; Speed-tcyc (MHz) = 167,154,143 ; I/o Voltage(V) = 2.5/3.3 ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2929. K7P403623B-H70 Samsung - K7P401823B 128K X 36 & 256K X 18 Synchronous Pipelined SRAM ; Organization = 128Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.0,7.5 ; Speed-tcyc (MHz) = 167,154,143 ; I/o Voltage(V) = 2.5/3.3 ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2930. K7P403623B-H75 Samsung - K7P401823B 128K X 36 & 256K X 18 Synchronous Pipelined SRAM ; Organization = 128Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.0,7.5 ; Speed-tcyc (MHz) = 167,154,143 ; I/o Voltage(V) = 2.5/3.3 ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2931. K7P403623M Samsung - K7P403623M 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 128Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.0,7.5 ; Speed-tcyc (MHz) = 154,143,133 ; I/o Voltage(V) = 3.3 ; Package = 119 Bga ; Production Status = Eol ; Comments = -
  2932. K7P403623M-H65 Samsung - K7P403623M 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 128Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.0,7.5 ; Speed-tcyc (MHz) = 154,143,133 ; I/o Voltage(V) = 3.3 ; Package = 119 Bga ; Production Status = Eol ; Comments = -
  2933. K7P403623M-H70 Samsung - K7P403623M 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 128Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.0,7.5 ; Speed-tcyc (MHz) = 154,143,133 ; I/o Voltage(V) = 3.3 ; Package = 119 Bga ; Production Status = Eol ; Comments = -
  2934. K7P403623M-H75 Samsung - K7P403623M 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 128Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 6.5,7.0,7.5 ; Speed-tcyc (MHz) = 154,143,133 ; I/o Voltage(V) = 3.3 ; Package = 119 Bga ; Production Status = Eol ; Comments = -
  2935. K7P403666A Samsung - K7P403666A 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 128Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.8,1.9,2.0 ; Speed-tcyc (MHz) = 300,277,250 ; I/o Voltage(V) = 1.5 ; Package = 119-BGA ; Production Status = Eol ; Comments = -
  2936. K7P403666A-H25 Samsung - K7P403666A 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 128Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.8,1.9,2.0 ; Speed-tcyc (MHz) = 300,277,250 ; I/o Voltage(V) = 1.5 ; Package = 119-BGA ; Production Status = Eol ; Comments = -
  2937. K7P403666A-H27 Samsung - K7P403666A 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 128Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.8,1.9,2.0 ; Speed-tcyc (MHz) = 300,277,250 ; I/o Voltage(V) = 1.5 ; Package = 119-BGA ; Production Status = Eol ; Comments = -
  2938. K7P403666A-H30 Samsung - K7P403666A 128Kx36 & 256Kx18 Synchronous Pipelined SRAM ; Organization = 128Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.8,1.9,2.0 ; Speed-tcyc (MHz) = 300,277,250 ; I/o Voltage(V) = 1.5 ; Package = 119-BGA ; Production Status = Eol ; Comments = -
  2939. K7P801811B Samsung - 256Kx36 & 512Kx18 Synchronous Pipelined SRAM
  2940. K7P801811B-HC25 Samsung - 256Kx36 & 512Kx18 Synchronous Pipelined SRAM
  2941. K7P801811B-HC27 Samsung - 256Kx36 & 512Kx18 Synchronous Pipelined SRAM
  2942. K7P801811B-HC30 Samsung - 256Kx36 & 512Kx18 Synchronous Pipelined SRAM
  2943. K7P801811B-HC33 Samsung - 256kx36 & 512kx18 Synchronous Pipelined Sram
  2944. K7P801811M Samsung - 256Kx36 & 512Kx18 SRAM
  2945. K7P801811M-H20 Samsung - 256kx36 & 512kx18 Sram
  2946. K7P801811M-H21 Samsung - 256Kx36 & 512Kx18 SRAM
  2947. K7P801811M-H25 Samsung - 256Kx36 & 512Kx18 SRAM
  2948. K7P801822B Samsung - K7P801822B 256K X 36 & 512K X 18 Synchronous Pipelined SRAM ; Organization = 256Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.3,2.5,2.0 ; Speed-tcyc (MHz) = 250,200,166 ; I/o Voltage(V) = 2.5/3.3 ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2949. K7P801822B-HC16 Samsung - K7P801822B 256K X 36 & 512K X 18 Synchronous Pipelined SRAM ; Organization = 256Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.3,2.5,2.0 ; Speed-tcyc (MHz) = 250,200,166 ; I/o Voltage(V) = 2.5/3.3 ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2950. K7P801822B-HC20 Samsung - K7P801822B 256K X 36 & 512K X 18 Synchronous Pipelined SRAM ; Organization = 256Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.3,2.5,2.0 ; Speed-tcyc (MHz) = 250,200,166 ; I/o Voltage(V) = 2.5/3.3 ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2951. K7P801822B-HC25 Samsung - K7P801822B 256K X 36 & 512K X 18 Synchronous Pipelined SRAM ; Organization = 256Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.3,2.5,2.0 ; Speed-tcyc (MHz) = 250,200,166 ; I/o Voltage(V) = 2.5/3.3 ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2952. K7P801866B Samsung - 256kx36 and 512kx18 Synchronous Pipelined Sram
  2953. K7P801866B-HC25 Samsung - K7P801866B 256Kx36 & 512Kx18 Synchronous Pipelined SRAM ; Organization = 512Kx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.5,1.6,2.0 ; Speed-tcyc (MHz) = 333,300,250 ; I/o Voltage(V) = 1.5(Max. 2.0) ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2954. K7P801866B-HC30 Samsung - K7P801866B 256Kx36 & 512Kx18 Synchronous Pipelined SRAM ; Organization = 512Kx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.5,1.6,2.0 ; Speed-tcyc (MHz) = 333,300,250 ; I/o Voltage(V) = 1.5(Max. 2.0) ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2955. K7P801866B-HC33 Samsung - K7P801866B 256Kx36 & 512Kx18 Synchronous Pipelined SRAM ; Organization = 512Kx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.5,1.6,2.0 ; Speed-tcyc (MHz) = 333,300,250 ; I/o Voltage(V) = 1.5(Max. 2.0) ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2956. K7P801866M Samsung - K7P801866M 256Kx36 & 512Kx18 Synchronous Pipelined SRAM ; Organization = 512Kx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.0,2.0,2.5 ; Speed-tcyc (MHz) = 250,200,200 ; I/o Voltage(V) = 1.5 ; Package = 119BGA ; Production Status = Eol ; Comments = -
  2957. K7P801866M-H20 Samsung - K7P801866M 256Kx36 & 512Kx18 Synchronous Pipelined SRAM ; Organization = 512Kx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.0,2.0,2.5 ; Speed-tcyc (MHz) = 250,200,200 ; I/o Voltage(V) = 1.5 ; Package = 119BGA ; Production Status = Eol ; Comments = -
  2958. K7P801866M-H21 Samsung - K7P801866M 256Kx36 & 512Kx18 Synchronous Pipelined SRAM ; Organization = 512Kx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.0,2.0,2.5 ; Speed-tcyc (MHz) = 250,200,200 ; I/o Voltage(V) = 1.5 ; Package = 119BGA ; Production Status = Eol ; Comments = -
  2959. K7P801866M-H25 Samsung - K7P801866M 256Kx36 & 512Kx18 Synchronous Pipelined SRAM ; Organization = 512Kx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.0,2.0,2.5 ; Speed-tcyc (MHz) = 250,200,200 ; I/o Voltage(V) = 1.5 ; Package = 119BGA ; Production Status = Eol ; Comments = -
  2960. K7P803611B Samsung - 256Kx36 & 512Kx18 Synchronous Pipelined SRAM
  2961. K7P803611B-HC25 Samsung - 256Kx36 & 512Kx18 Synchronous Pipelined SRAM
  2962. K7P803611B-HC27 Samsung - 256Kx36 & 512Kx18 Synchronous Pipelined SRAM
  2963. K7P803611B-HC30 Samsung - 256Kx36 & 512Kx18 Synchronous Pipelined SRAM
  2964. K7P803611B-HC33 Samsung - 256Kx36 & 512Kx18 Synchronous Pipelined SRAM
  2965. K7P803611M Samsung - 256Kx36 & 512Kx18 SRAM
  2966. K7P803611M-H20 Samsung - 256Kx36 & 512Kx18 SRAM
  2967. K7P803611M-H21 Samsung - 256Kx36 & 512Kx18 SRAM
  2968. K7P803611M-H25 Samsung - 256Kx36 & 512Kx18 SRAM
  2969. K7P803622B Samsung - K7P803622B 256K X 36 & 512K X 18 Synchronous Pipelined SRAM ; Organization = 256Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.3,2.5,2.0 ; Speed-tcyc (MHz) = 250,200,166 ; I/o Voltage(V) = 2.5/3.3 ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2970. K7P803622B-HC16 Samsung - K7P803622B 256K X 36 & 512K X 18 Synchronous Pipelined SRAM ; Organization = 256Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.3,2.5,2.0 ; Speed-tcyc (MHz) = 250,200,166 ; I/o Voltage(V) = 2.5/3.3 ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2971. K7P803622B-HC20 Samsung - K7P803622B 256K X 36 & 512K X 18 Synchronous Pipelined SRAM ; Organization = 256Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.3,2.5,2.0 ; Speed-tcyc (MHz) = 250,200,166 ; I/o Voltage(V) = 2.5/3.3 ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2972. K7P803622B-HC25 Samsung - K7P803622B 256K X 36 & 512K X 18 Synchronous Pipelined SRAM ; Organization = 256Kx36 ; VDD(V) = 3.3 ; Access Time-tCD(ns) = 3.3,2.5,2.0 ; Speed-tcyc (MHz) = 250,200,166 ; I/o Voltage(V) = 2.5/3.3 ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2973. K7P803666B Samsung - 256Kx36 and 512Kx18 Synchronous Pipelined SRAM
  2974. K7P803666B-HC25 Samsung - K7P803666B 256Kx36 & 512Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.5,1.6,2.0 ; Speed-tcyc (MHz) = 333,300,250 ; I/o Voltage(V) = 1.5(Max. 2.0) ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2975. K7P803666B-HC30 Samsung - K7P803666B 256Kx36 & 512Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.5,1.6,2.0 ; Speed-tcyc (MHz) = 333,300,250 ; I/o Voltage(V) = 1.5(Max. 2.0) ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2976. K7P803666B-HC33 Samsung - K7P803666B 256Kx36 & 512Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 1.5,1.6,2.0 ; Speed-tcyc (MHz) = 333,300,250 ; I/o Voltage(V) = 1.5(Max. 2.0) ; Package = 119BGA ; Production Status = Mass Production ; Comments = -
  2977. K7P803666M Samsung - K7P803666M 256Kx36 & 512Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.0,2.0,2.5 ; Speed-tcyc (MHz) = 250,200,200 ; I/o Voltage(V) = 1.5 ; Package = 119-BGA ; Production Status = Eol ; Comments = -
  2978. K7P803666M-H20 Samsung - K7P803666M 256Kx36 & 512Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.0,2.0,2.5 ; Speed-tcyc (MHz) = 250,200,200 ; I/o Voltage(V) = 1.5 ; Package = 119-BGA ; Production Status = Eol ; Comments = -
  2979. K7P803666M-H21 Samsung - K7P803666M 256Kx36 & 512Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.0,2.0,2.5 ; Speed-tcyc (MHz) = 250,200,200 ; I/o Voltage(V) = 1.5 ; Package = 119-BGA ; Production Status = Eol ; Comments = -
  2980. K7P803666M-H25 Samsung - K7P803666M 256Kx36 & 512Kx18 Synchronous Pipelined SRAM ; Organization = 256Kx36 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.0,2.0,2.5 ; Speed-tcyc (MHz) = 250,200,200 ; I/o Voltage(V) = 1.5 ; Package = 119-BGA ; Production Status = Eol ; Comments = -
  2981. K7Q161852A Samsung - 512Kx36 & 1Mx18 QDRTM b2 SRAM
  2982. K7Q161852A-FC10 Samsung - K7Q161852A 512K X 36-bit, 1M X 18-bit QDR(TM)b2 SRAM ; Organization = 1Mx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.5,3.0,3.0 ; Cycle Time(MHz) = 167,133,100 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Mass Production ; Comments = QDR I-2B
  2983. K7Q161852A-FC13 Samsung - K7Q161852A 512K X 36-bit, 1M X 18-bit QDR(TM)b2 SRAM ; Organization = 1Mx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.5,3.0,3.0 ; Cycle Time(MHz) = 167,133,100 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Mass Production ; Comments = QDR I-2B
  2984. K7Q161852A-FC16 Samsung - K7Q161852A 512K X 36-bit, 1M X 18-bit QDR(TM)b2 SRAM ; Organization = 1Mx18 ; VDD(V) = 2.5 ; Access Time-tCD(ns) = 2.5,3.0,3.0 ; Cycle Time(MHz) = 167,133,100 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Mass Production ; Comments = QDR I-2B
  2985. K7Q161854A Samsung - 512kx36-bit, 1mx18-bit Qdr Sram
  2986. K7Q161854A-FC10 Samsung - 512Kx36-bit, 1Mx18-bit QDR SRAM
  2987. K7Q161854A-FC13 Samsung - 512Kx36-bit, 1Mx18-bit QDR SRAM
  2988. K7Q161854A-FC16 Samsung - 512Kx36-bit, 1Mx18-bit QDR SRAM
  2989. K7Q161854A-FC20 Samsung - 512Kx36-bit, 1Mx18-bit QDR SRAM
  2990. K7Q161862 Samsung - 512Kx36 & 1Mx18 QDRTM b2 SRAM
  2991. K7Q161862B Samsung - 512kx36 & 1mx18 Qdrtm B2 Sram
  2992. K7Q161882 Samsung - 512Kx36 & 1Mx18 QDR b2 SRAM
  2993. K7Q161882A Samsung - 512kx36 & 1mx18 Qdr B2 Sram
  2994. K7Q161882A-FC10 Samsung - K7Q161882A 512Kx36-bit, 1Mx18-bit QDR(TM)b2 SRAM ; Organization = 1Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.7,3.0,3.0 ; Cycle Time(MHz) = 167,133,100 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Mass Production ; Comments = QDR I-2B
  2995. K7Q161882A-FC13 Samsung - K7Q161882A 512Kx36-bit, 1Mx18-bit QDR(TM)b2 SRAM ; Organization = 1Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.7,3.0,3.0 ; Cycle Time(MHz) = 167,133,100 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Mass Production ; Comments = QDR I-2B
  2996. K7Q161882A-FC15 Samsung - K7Q161882A 512Kx36-bit, 1Mx18-bit QDR(TM)b2 SRAM ; Organization = 1Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.7,3.0,3.0 ; Cycle Time(MHz) = 167,133,100 ; I/o Voltage(V) = 1.5,1.8 ; Package = 165FBGA ; Production Status = Mass Production ; Comments = QDR I-2B
  2997. K7Q161884A Samsung - K7Q161884A 512Kx36-bit, 1Mx18-bit QDR(TM)b4 SRAM ; Organization = 1Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.5,3.0,3.0 ; Cycle Time(MHz) = 167,133,100 ; I/o Voltage(V) = 1.5,1.8 ; Package = 169FBGA ; Production Status = Mass Production ; Comments = QDR I-4B
  2998. K7Q161884A-FC10 Samsung - K7Q161884A 512Kx36-bit, 1Mx18-bit QDR(TM)b4 SRAM ; Organization = 1Mx18 ; VDD(V) = 1.8 ; Access Time-tCD(ns) = 2.5,3.0,3.0 ; Cycle Time(MHz) = 167,133,100 ; I/o Voltage(V) = 1.5,1.8 ; Package = 169FBGA ; Production Status = Mass Production ; Comments = QDR I-4B
  2999. K7N04FM STMicroelectronics - OMNIFET Fully Autoprotected Power MOSFET
  3000. К740УД5-1 RD Alfa - Операционный усилитель общего применения