MRF21060L - 2110–2170 MHz, 60 W, 28V Lateral N–Channel RF Power MOSFETsThe MRF21060LR3 and MRF21060LSR3 are designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W–CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications.MRF21060L Features * Typical 2–carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 6 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain: 12.5 dB
MRF21085L - 2110–2170 MHz, 90 W, 28V Lateral N–Channel RF Power MOSFETs The MRF21085LR3 and MRF21085LSR3 are designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. * Typical 2–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 19 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
MRF5S21090H - MRF5S21090HSR3 2110-2170 MHz, 19 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
MRF5S21090L - R3 SR3 2170 Mhz, 19 W Avg., 2 X Cdma, 28V Lateral N-channel RF Power MOSFETs
MRF5S21090LR3 - R3 SR3 2170 Mhz, 19 W Avg., 2 X Cdma, 28V Lateral N-channel RF Power MOSFETs
MRF5S21090LSR3 - R3 SR3 2170 Mhz, 19 W Avg., 2 X Cdma, 28V Lateral N-channel RF Power MOSFETs
MRF5S21100H - MRF5S21100HSR3 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETsRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for W-CDMA base station applications with frequencies from 2110to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.To be used i n Class AB for PCN - PCS/cel lular radi o and WLLapplications.• Typical 2 -carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1050 mA,Pout = 23 Watts Avg., Full Frequency Band, Channel
MRF5S21100L - MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 Mhz, 23 W Avg., 2 X W-CDMA, 28V Lateral N-channel RF Power MOSFETs
MRF5S21100LR3 - The Rf Mosfet Line Rf Power Field Effect N-channel Enhancement-mode Lateral Mosfets
MRF5S21100LSR3 - The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21130 - MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 Mhz, 28 W Avg., 2 X W-CDMA, 28V Lateral N-channel RF Power MOSFETs
MRF5S21130H - MRF5S21130HSR3 2110-2170 MHz, 28 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for W-CDMA base station applications at frequencies from 2110to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.To be used i n Class AB for PCN - PCS/cel lular radi o and WLLapplications.• Typical 2 -Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA,Pout = 28 Watts Avg., Full Frequency Band, Channel Bandwidth =3.84 MHz, PAR = 8.5 dB
MRF5S21130R3 - MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 Mhz, 28 W Avg., 2 X W-CDMA, 28V Lateral N-channel RF Power MOSFETs
MRF5S21130S - MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 Mhz, 28 W Avg., 2 X W-CDMA, 28V Lateral N-channel RF Power MOSFETs
MRF5S21130SR3 - MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 Mhz, 28 W Avg., 2 X W-CDMA, 28V Lateral N-channel RF Power MOSFETs
MRF6P23190HR6 - 2400 MHz, 40 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFETThe MRF6P23190HR6 is designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion systems.MRF6P23190HR6 Features * Typical 2–Carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 1900 mA, Pout = 40 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain: 14 dB Drain Effi
MRF6S18100N - The MRF6S18100NR1 and MRF6S18100NBR1 are designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 100 Watts, Full Frequency Band (1805–1880 MHz or 1930–1990 MHz) Power Gain: 14.5 dB Drain Efficiency: 49% GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Po
MRF6S19060N - 1930–1990 MHz, 12 W Avg., 28 V, 2 x N–CDMA Lateral N–Channel RF Power MOSFETsThe MRF6S19060NR1 and MRF6S19060NBR1 are designed for N–CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. * Typical 2–carrier N–CDMA Performance: VDD = 28 Volts, IDQ = 610 mA, Pout = 12 Watts Avg., Full Frequency Band. IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 T
MRF6S19100H - MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
MRF6S19100N - MRF6S19100NBR1 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
MRF6S19140H - MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
MRF6S20010N - The MRF6S20010NR1 and MRF6S20010GNR1 are designed for ClassA or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.MRF6S20010N Features * Typical Two-Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP Power Gain: 15.5 dB Drain Efficiency: 36% IMD: –34 dBc * Typical 2–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt
MRF6S21050L - The MRF6S21050L is designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. * Typical 2–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 11.5 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain: 16 dB Drain Efficiency: 27.7% IM3 @ 10
MRF6S21060N - 2110–2170 MHz, 14 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFETs The MRF6S21060NR1 and MRF6S21060NBR1 are designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
MRF6S21100N - MRF6S21100NBR1 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
MRF6S21140H - MRF6S21140HSR3 2110-2170 MHz, 30 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs,
MRF6S27085H - MRF6S27085HSR3 2600-2700 MHz, 20 W Avg., 28V Single N-CDMA Lateral N-Channel RF Power MOSFETs
MRF6S9125N, - RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for broadband commercial and industrial applications withfrequencies up to 1000 MHz. The high gain and broadband performance ofthese devices make them ideal for large - signal, common- source amplifierapplications in 28 volt base station equipment.N-CDMA Application• Typical Single-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ =950 mA, Pout = 27 Watt Avg., Full Frequency Band (865-960 MHz), IS-95CDMA (Pilot, Sync, Paging,
MRF7S19100N - 1930–1990 MHz, 29 W Avg., 28V Single W–CDMA Lateral N–Channel RF Power MOSFETs The MRF7S19100NR1 and MRF7S19100NBR1 are designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.Link Product PictureMRF7S19100N Features * Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 29 Watts Avg., Full Frequency Band, 3GPP Test
MRF7S19100N - RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for CDMA base station applications with frequencies from 1930 to1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To beused in Class AB and Class C for PCN - PCS/cel lular radi o and WLLapplications.• Typical Single- Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =1000 mA, Pout = 29 Watts Avg., Full Frequency Band, 3GPP Test Model 1,64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input SignalPAR
MRF7S21170H - 2110–2170 MHz, 50 W Avg., 28V Single W–CDMA Lateral N–Channel RF Power MOSFETs The MRF7S21170HR3 and MRF7S21170HSR3 are designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.Link Product PictureMRF7S21170H Features * Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 50 Watts Avg., Full Frequency Band, 3GPP Test
MRFG35002N6T1 - 3.5 GHz, 1.5 W, 6V Power FET GaAs PHEMTThe MRFG35002N6T1 is designed for WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications..# Typical Single–Carrier W–CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158.5 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain: 10 dB Drain Efficiency: 27% ACPR @ 5 MHz Offset: –41 dBc in 3.
MRFG35003MT1 - The Rf Gaas Line Gallium Arsenide Phemt Rf Power Field Effect Transistor
MRFG35003N6 - Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterizedfrom 0.5 to 5.0 GHz. Device is unmatched and is characterized for use inClass AB Customer Premise Equipment (CPE) applications.• Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 6 Volts,IDQ = 180 mAOutput Power 450 mWattsPower Gain 9 dBEfficiency 24%• 3 Watts P1dB @ 3.55 GHz• Excellent Phase Linearity and Group Delay Characteristics• High Gain, High Efficiency and High Linearity• N Suffix Indicates Lead-Free Termina
MRFG35010A - 3.5 GHz, 10 W, 12V Power FET GaAs PHEMTsThe MRFG35010AR1 and MRFG35010AR5 are designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Devices are unmatched and are suitable for use in Class AB or ClassA linear base station applications.MRFG35010A Features * Typical Single–Carrier W–CDMA Performance: VDD = 12 Volts, IDQ = 140 mA, Pout = 1 Watt Avg., f = 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain: 1
MRFG35010ANT1 - : 3.5 GHz, 9 W, 12V Power FET GaAs PHEMT SUBSCRIBE The is designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. Features * Typical Single–Carrier W–CDMA Performance: VDD = 12 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain