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Electronic components list Motorola, page 30



  1. Motorola, Inc.
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    MRF19030LSR3 - The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
  2. MRF19030R3 - RF POWER FIELD EFFECT TRANSISTORS
  3. MRF19030SR3 - RF POWER FIELD EFFECT TRANSISTORS
  4. MRF19045LR3 - Rf Power Field Effect Transistors N-channel Enhancement-mode Lateral Mosfets
  5. MRF19045LSR3 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
  6. MRF19045R3 - Rf Power Field Effect Transistors
  7. MRF19045SR3 - RF POWER FIELD EFFECT TRANSISTORS
  8. MRF19060 - Rf Power Field Effect Transistors
  9. MRF19060R3 - RF POWER FIELD EFFECT TRANSISTORS
  10. MRF19060S - MRF19060, MRF19060R3, MRF19060SR3 1990 Mhz, 60 W, 26V Lateral N-channel RF Power MOSFETs
  11. MRF19060SR3 - RF POWER FIELD EFFECT TRANSISTORS
  12. MRF19085 - Rf Power Field Effect Transistors
  13. MRF19085LR3 - RF Power Field Effect Transistors
  14. MRF19085LSR3 - RF Power Field Effect Transistors
  15. MRF19085R3 - RF Power Field Effect Transistors
  16. MRF19085S - MRF19085, MRF19085R3, MRF19085SR3, MRF19085LSR3 1990 Mhz, 90 W, 26V Lateral N-channel RF Power MOSFETs
  17. MRF19085SR3 - RF Power Field Effect Transistors
  18. MRF19090 - Rf Power Field Effect Transistors
  19. MRF19090S - RF POWER FIELD EFFECT TRANSISTORS
  20. MRF19090SR3 - RF POWER FIELD EFFECT TRANSISTORS
  21. MRF19120 - Rf Power Field Effect Transistors
  22. MRF19120S - RF POWER FIELD EFFECT TRANSISTORS
  23. MRF19125 - Rf Sub-micron Mosfet Line N-channel Enhancement-mode Lateral Mosfets
  24. MRF19125S - RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
  25. MRF19125SR3 - RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs
  26. MRF1946 - Rf Power Transistors Npn Silicon
  27. MRF1946A - RF POWER TRANSISTORS NPN SILICON
  28. MRF20030 - Rf Power Transistor
  29. MRF20030R - 2 Ghz, 30 W, 26V Broadband RF Power Bipolar Transistor - Archived
  30. MRF20060 - Rf Power Broadband Npn Bipolar
  31. MRF20060R - MRF20060R, MRF20060RS 2 Ghz, 60 W, 26V Broadband RF Power Bipolar Transistors - Archived
  32. MRF20060RS - MRF20060R, MRF20060RS 2 Ghz, 60 W, 26V Broadband RF Power Bipolar Transistors - Archived
  33. MRF20060S - RF POWER BROADBAND NPN BIPOLAR
  34. MRF21010 - Rf Power Field Effect Transistors N-channel Enhancement-mode Lateral Mosfets
  35. MRF21010LR1 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
  36. MRF21010LSR1 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
  37. MRF21010R1 - MRF21010R1, MRF21010LSR1 2170 Mhz, 10 W, 28V Lateral N-channel Broadband RF Power MOSFETs
  38. MRF21030 - MRF21030LSR3 2200 MHz, 30 W, 28V Lateral N-Channel RF Power MOSFET
  39. MRF21030D - Rf Power Field Effect Transistors N-channel Enancement- Mode Lateral Mosfets
  40. MRF21030LR3 - Rf Power Field Effect Transistors
  41. MRF21030LSR3 - RF Power Field Effect Transistors
  42. MRF21030R3 - RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS
  43. MRF21030SR3 - RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS
  44. MRF21045 - Rf Power Field Effect Transistors
  45. MRF21045LR3 - RF Power Field Effect Transistors
  46. MRF21045LSR3 - RF Power Field Effect Transistors
  47. MRF21045R3 - MRF21045R3, MRF21045SR3 2170 Mhz, 45 W, 28V Lateral N-channel RF Power MOSFETs
  48. MRF21045SR3 - MRF21045R3, MRF21045SR3 2170 Mhz, 45 W, 28V Lateral N-channel RF Power MOSFETs
  49. MRF21060 - Rf Power Field Effect Transistors
  50. MRF21060L - 2110–2170 MHz, 60 W, 28V Lateral N–Channel RF Power MOSFETsThe MRF21060LR3 and MRF21060LSR3 are designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W–CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications.MRF21060L Features * Typical 2–carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 6 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain: 12.5 dB
  51. MRF21060R3 - RF Power Field Effect Transistors
  52. MRF21060S - MRF21060, MRF21060R3, MRF21060SR3 2170 Mhz, 60 W, 28V Lateral N-channel RF Power MOSFETs
  53. MRF21060SR3 - RF Power Field Effect Transistors
  54. MRF21085 - Rf Power Field Effect Transistors
  55. MRF21085L - 2110–2170 MHz, 90 W, 28V Lateral N–Channel RF Power MOSFETs The MRF21085LR3 and MRF21085LSR3 are designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. * Typical 2–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 19 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
  56. MRF21085LSR3 - RF Power Field Effect Transistors
  57. MRF21085R3 - RF Power Field Effect Transistors
  58. MRF21085S - MRF21085, MRF21085R3, MRF21085SR3, MRF21085LSR3 2170 Mhz, 90 W, 28V Lateral N-channel RF Power MOSFETs
  59. MRF21085SR3 - RF Power Field Effect Transistors
  60. MRF21090 - Rf Power Field Effect Transistors
  61. MRF21090R3 - RF Power Field Effect Transistors
  62. MRF21090S - MRF21090, MRF21090S 2170 Mhz, 90 W, 28V Lateral N-channel RF Power MOSFETs
  63. MRF21090SR3 - RF Power Field Effect Transistors
  64. MRF21120 - The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET
  65. MRF21120S - 2170 Mhz, 120 W, 28V Lateral N-channel RF Power MOSFETs
  66. MRF21125 - Rf Power Field Effect Transistors
  67. MRF21125S - RF POWER FIELD EFFECT TRANSISTORS
  68. MRF21125SR3 - RF POWER FIELD EFFECT TRANSISTORS
  69. MRF21180 - Rf Power Field Effect Transistor
  70. MRF21180R6 - RF Power Field Effect Transistor
  71. MRF21180S - MRF21180, MRF21180S 2170 Mhz, 170 W, 28V Lateral N-channel RF Power MOSFETs
  72. MRF224 - 40w, 175mhz Rf Power Transistor Npn Silicon
  73. MRF240 - Rf Power Transistors Npn Silicon
  74. MRF247 - Rf Power Transistor Npn Silicon
  75. MRF248 - Npn Silicon Rf Power Transistor
  76. MRF255 - N-channel Broadband Rf Power Fet
  77. MRF255PHT - Rf Power Field-effect Transistor
  78. MRF2628 - Rf Power Transistor Npn Silicon
  79. MRF275 - 150 W, 28 V, 500 Mhz N.channel Mos Broadband 100 - 500 Mhz Rf Power Fet
  80. MRF275G - 150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
  81. MRF281 - Rf Power Field Effect Transistors
  82. MRF281SR1 - RF POWER FIELD EFFECT TRANSISTORS
  83. MRF281ZR1 - RF POWER FIELD EFFECT TRANSISTORS
  84. MRF282 - Lateral N-channel Broadband Rf Power Mosfets
  85. MRF282S - LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
  86. MRF282SR1 - MRF282SR1, MRF282ZR1 2000 Mhz, 10 W, 26V Lateral N-channel Broadband RF Power MOSFETs
  87. MRF282Z - LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
  88. MRF282ZR1 - MRF282SR1, MRF282ZR1 2000 Mhz, 10 W, 26V Lateral N-channel Broadband RF Power MOSFETs
  89. MRF284 - Rf Power Field-effect Transistors
  90. MRF284LSR1 - MRF284R1, MRF284LSR1 2000 Mhz, 30 W, 26V Lateral N-channel Broadband RF Power MOSFETs
  91. MRF284R1 - MRF284R1, MRF284LSR1 2000 Mhz, 30 W, 26V Lateral N-channel Broadband RF Power MOSFETs
  92. MRF284S - RF Power Field-Effect Transistors
  93. MRF286 - The Rf Sub-micron Mosfet Line Rf Power Field Effect Transistors
  94. MRF286S - The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
  95. MRF2947 - Low Noise Transistors
  96. MRF2947AT1 - LOW NOISE TRANSISTORS
  97. MRF2947AT2 - LOW NOISE TRANSISTORS
  98. MRF2947RAT1 - LOW NOISE TRANSISTORS
  99. MRF2947RAT2 - LOW NOISE TRANSISTORS
  100. MRF3010 - Lateral N-channel Broadband Rf Power Mosfet
  101. MRF3094 - Microwave Linear Power Transistors
  102. MRF3095 - MICROWAVE LINEAR POWER TRANSISTORS
  103. MRF313 - High-frequency Transistor Npn Silicon
  104. MRF314 - Rf Power Transistors Npn Silicon
  105. MRF316 - Broadband Rf Power Transistor Npn Silicon
  106. MRF317 - Broadband Rf Power Transistor Npn Silicon
  107. MRF321 - Rf Power Transistor Npn Silicon
  108. MRF323 - Rf Power Transistor Npn Silicon
  109. MRF325 - Broadband Rf Power Transistor Npn Silicon
  110. MRF326 - Broadband Rf Power Transistor Npn Silicon
  111. MRF327 - Broadband Rf Power Transistor Npn Silicon
  112. MRF329 - Broadband Rf Power Transistor Npn Silicon
  113. MRF331 - The Rf Line
  114. MRF338 - Broadband Rf Power Transistor Npn Silicon
  115. MRF372 - The Rf Mosfet Line Rf Power Field Effect Transistor
  116. MRF372D - THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR
  117. MRF373A - Rf Power Field Effect Transistors
  118. MRF373ALR1 - RF Power Field Effect Transistors
  119. MRF373ALSR1 - RF Power Field Effect Transistors
  120. MRF373AR1 - Rf Power Field Effect Transistors
  121. MRF373ASR1 - RF POWER FIELD EFFECT TRANSISTORS
  122. MRF373LSR1 - MRF373R1, MRF373SR1 470-860 Mhz, 60 W, 28V Lateral N-channel Broadband RF Power MOSFET
  123. MRF373R1 - Rf Power Field Effect Transistors
  124. MRF373SR1 - RF POWER FIELD EFFECT TRANSISTORS
  125. MRF374A - Rf Power Field Effect Transistor
  126. MRF377 - Rf Power Field Effect Transistor
  127. MRF377R3 - RF POWER FIELD EFFECT TRANSISTOR
  128. MRF377R5 - RF POWER FIELD EFFECT TRANSISTOR
  129. MRF3866 - High-frequency Transistors Npn Silicon
  130. MRF392 - Broadband Push-pull Rf Power Transistor Npn Silicon
  131. MRF393 - Broadband Push-pull Rf Power Transistor Npn Silicon
  132. MRF412 - Rf Power Transistor
  133. MRF421 - Rf Power Transistors Npn Silicon
  134. MRF422 - Rf Power Transistors Npn Silicon
  135. MRF426 - Rf Power Transistor Npn Silicon
  136. MRF429 - Rf Power Transistor Npn Silicon
  137. MRF430 - The Rf Line Npn Silicon Rf Power Transistor
  138. MRF433 - Npn Silicon Rf Power Transistor Npn Silicons
  139. MRF4427 - High-frequency Transistor Npn Silicon
  140. MRF448 - Rf Power Transistor Npn Silicon
  141. MRF449 - Rf Power Transistors
  142. MRF449A - RF POWER TRANSISTORS
  143. MRF450 - The Rf Line
  144. MRF450A - THE RF LINE
  145. MRF453 - Rf Power Transistors
  146. MRF453A - RF POWER TRANSISTORS
  147. MRF454 - Rf Power Transistor Npn Silicon
  148. MRF455 - Rf Power Transistor Npn Silicon
  149. MRF464 - Rf Power Transistor Npn Silicon
  150. MRF477 - Rf Power Transistor Npn Silicon
  151. MRF486 - Npn Silicon Rf Power Transistor
  152. MRF492 - Rf Power Transistor Npn Silicon
  153. MRF497 - Npn Silicon Rf Power Transistor
  154. MRF5003 - N-channel Broadband Rf Power Fet
  155. MRF5007 - N-channel Broadband Rf Power Fet
  156. MRF5007R1 - N-CHANNEL BROADBAND RF POWER FET
  157. MRF5015 - N-channel Broadband Rf Power Fet
  158. MRF5035 - N-channel Broadband Rf Power Fet
  159. MRF5176 - Rf Power Transistor Npn Silicon
  160. MRF5177 - 30w, 400mhz Rf Power Transistor Npn Silicon
  161. MRF5177A - 30W, 400MHZ RF POWER TRANSISTOR NPN SILICON
  162. MRF5211LT1 - HIGH-FREQUENCY TRANSISTOR PNP SILICON
  163. MRF553 - Rf Low Power Transistor Npn Silicon
  164. MRF555 - Rf Low Power Transistor Npn Silicon
  165. MRF557 - Rf Low Power Transistor Npn Silicon
  166. MRF5583 - Surface Mount High-frequency Transistor Pnp Silicon
  167. MRF571 - NPN Silicon High-Frequency Transistors
  168. MRF5711LT1 - NPN Silicon High-Frequency Transistors
  169. MRF5811LT1 - Low Noise High-frequency Transistor Npn Silicon
  170. MRF587 - High-frequency Transistor Npn Silicon
  171. MRF5P20180 - Rf Power Field Effect Transistor
  172. MRF5P20180R6 - RF POWER FIELD EFFECT TRANSISTOR
  173. MRF5P21180 - Rf Power Field Effect Transistor
  174. MRF5P21180 - N-channel Enhancement-mode Lateral Mosfet
  175. MRF5P21180R6 - RF Power Field Effect Transistor
  176. MRF5P21240 - Rf Power Field Effect Transistor
  177. MRF5P21240R6 - RF POWER FIELD EFFECT TRANSISTOR
  178. MRF5S19090H - MRF5S19090HSR3 1930-1990 MHz, 18 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs,
  179. MRF5S19090L - MRF5S19090L, MRF5S19090LR3, MRF5S19090LSR3 1990 Mhz, 18 W Avg., 2 X N-CDMA, 28V Lateral N-channel RF Power MOSFETs
  180. MRF5S19090LR3 - MRF5S19090L, MRF5S19090LR3, MRF5S19090LSR3 1990 Mhz, 18 W Avg., 2 X N-CDMA, 28V Lateral N-channel RF Power MOSFETs
  181. MRF5S19090LSR3 - MRF5S19090L, MRF5S19090LR3, MRF5S19090LSR3 1990 Mhz, 18 W Avg., 2 X N-CDMA, 28V Lateral N-channel RF Power MOSFETs
  182. MRF5S19100H - MRF5S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
  183. MRF5S19100HD - The Rf Mosfet Line Rf Power Field Effect Transistors N-channel Enhancement-mode Lateral Mosfets
  184. MRF5S19100HR3 - The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
  185. MRF5S19100HSR3 - The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
  186. MRF5S19130R3 - N-channel Enhancement-mode Lateral Mosfets
  187. MRF5S19130SR3 - N-Channel Enhancement-Mode Lateral MOSFETs
  188. MRF5S19150 - Rf Power Field Effect Transistors
  189. MRF5S19150H - MRF5S19130HSR3 1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
  190. MRF5S19150R3 - RF Power Field Effect Transistors
  191. MRF5S19150S - MRF5S19150, MRF5S19150R3, MRF5S19150S, MRF5S19150SR3 1990 Mhz, 32 W, 28V Lateral N-channel RF Power MOSFETs
  192. MRF5S19150SR3 - RF Power Field Effect Transistors
  193. MRF5S21090H - MRF5S21090HSR3 2110-2170 MHz, 19 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
  194. MRF5S21090L - R3 SR3 2170 Mhz, 19 W Avg., 2 X Cdma, 28V Lateral N-channel RF Power MOSFETs
  195. MRF5S21090LR3 - R3 SR3 2170 Mhz, 19 W Avg., 2 X Cdma, 28V Lateral N-channel RF Power MOSFETs
  196. MRF5S21090LSR3 - R3 SR3 2170 Mhz, 19 W Avg., 2 X Cdma, 28V Lateral N-channel RF Power MOSFETs
  197. MRF5S21100H - MRF5S21100HSR3 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETsRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for W-CDMA base station applications with frequencies from 2110to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.To be used i n Class AB for PCN - PCS/cel lular radi o and WLLapplications.• Typical 2 -carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1050 mA,Pout = 23 Watts Avg., Full Frequency Band, Channel
  198. MRF5S21100L - MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 Mhz, 23 W Avg., 2 X W-CDMA, 28V Lateral N-channel RF Power MOSFETs
  199. MRF5S21100LR3 - The Rf Mosfet Line Rf Power Field Effect N-channel Enhancement-mode Lateral Mosfets
  200. MRF5S21100LSR3 - The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
  201. MRF5S21130 - MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 Mhz, 28 W Avg., 2 X W-CDMA, 28V Lateral N-channel RF Power MOSFETs
  202. MRF5S21130H - MRF5S21130HSR3 2110-2170 MHz, 28 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for W-CDMA base station applications at frequencies from 2110to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.To be used i n Class AB for PCN - PCS/cel lular radi o and WLLapplications.• Typical 2 -Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA,Pout = 28 Watts Avg., Full Frequency Band, Channel Bandwidth =3.84 MHz, PAR = 8.5 dB
  203. MRF5S21130R3 - MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 Mhz, 28 W Avg., 2 X W-CDMA, 28V Lateral N-channel RF Power MOSFETs
  204. MRF5S21130S - MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 Mhz, 28 W Avg., 2 X W-CDMA, 28V Lateral N-channel RF Power MOSFETs
  205. MRF5S21130SR3 - MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 Mhz, 28 W Avg., 2 X W-CDMA, 28V Lateral N-channel RF Power MOSFETs
  206. MRF5S21150 - Rf Power Field Effect Transistors
  207. MRF5S21150R3 - RF POWER FIELD EFFECT TRANSISTORS
  208. MRF5S21150S - RF POWER FIELD EFFECT TRANSISTORS
  209. MRF5S21150SR3 - RF POWER FIELD EFFECT TRANSISTORS
  210. MRF5S9070NR1 - Rf Power Field Effect Transistors
  211. MRF6401 - Rf Linear Power Transistor
  212. MRF6401PHT - Npn Silicon Rf Power Transistor
  213. MRF6402 - Rf Power Transistor Npn Silicon
  214. MRF6404 - Rf Power Transistor Npn Silicon
  215. MRF6404K - RF POWER TRANSISTOR NPN SILICON
  216. MRF6408 - Rf Power Transistor Npn Silicon
  217. MRF6409 - Rf Power Transistor Npn Silicon
  218. MRF641 - Rf Power Transistor Npn Silicon
  219. MRF6414 - Rf Power Transistor Npn Silicon
  220. MRF6414PHOTOMASTER - 960 Mhz, 50 W, 26V RF Power Transistor - Archived
  221. MRF6414PHT - Npn Silicon Rf Power Transistor
  222. MRF644 - Rf Power Transistor Npn Silicon
  223. MRF650 - Rf Power Transistor Npn Silicon
  224. MRF652 - Rf Power Transistors Npn Silicon
  225. MRF6522-060 - MRF6522-60 RF Power Transistor
  226. MRF6522-070 - MRF6522-70, MRF6522-70R3 921-960 Mhz, 70 W, 26V Lateral N-channel RF Power MOSFETs
  227. MRF6522-10R1 - 960 Mhz, 10 W, 26V Lateral N-channel RF Power MOSFET
  228. MRF6522-5R1 - RF Power Transistor
  229. MRF6522-70 - Rf Power Field Effect Transistor
  230. MRF6522-70R3 - RF Power Field Effect Transistor
  231. MRF652S - RF POWER TRANSISTORS NPN SILICON
  232. MRF653 - Rf Power Transistor Npn Silicon
  233. MRF654 - RF POWER TRANSISTOR NPN SILICON
  234. MRF658 - Rf Power Transistor Npn Silicon
  235. MRF6P23190HR6 - 2400 MHz, 40 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFETThe MRF6P23190HR6 is designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion systems.MRF6P23190HR6 Features * Typical 2–Carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 1900 mA, Pout = 40 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain: 14 dB Drain Effi
  236. MRF6S18060 - MRF6S18060MBR1 1800-2000 MHz, 60 W, 26V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs - Archived
  237. MRF6S18100N - The MRF6S18100NR1 and MRF6S18100NBR1 are designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 100 Watts, Full Frequency Band (1805–1880 MHz or 1930–1990 MHz) Power Gain: 14.5 dB Drain Efficiency: 49% GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Po
  238. MRF6S19060N - 1930–1990 MHz, 12 W Avg., 28 V, 2 x N–CDMA Lateral N–Channel RF Power MOSFETsThe MRF6S19060NR1 and MRF6S19060NBR1 are designed for N–CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. * Typical 2–carrier N–CDMA Performance: VDD = 28 Volts, IDQ = 610 mA, Pout = 12 Watts Avg., Full Frequency Band. IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 T
  239. MRF6S19100H - MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
  240. MRF6S19100N - MRF6S19100NBR1 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
  241. MRF6S19140H - MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
  242. MRF6S20010N - The MRF6S20010NR1 and MRF6S20010GNR1 are designed for ClassA or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.MRF6S20010N Features * Typical Two-Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP Power Gain: 15.5 dB Drain Efficiency: 36% IMD: –34 dBc * Typical 2–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt
  243. MRF6S21050L - The MRF6S21050L is designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. * Typical 2–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 11.5 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain: 16 dB Drain Efficiency: 27.7% IM3 @ 10
  244. MRF6S21060N - 2110–2170 MHz, 14 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFETs The MRF6S21060NR1 and MRF6S21060NBR1 are designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
  245. MRF6S21100N - MRF6S21100NBR1 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
  246. MRF6S21140H - MRF6S21140HSR3 2110-2170 MHz, 30 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs,
  247. MRF6S27085H - MRF6S27085HSR3 2600-2700 MHz, 20 W Avg., 28V Single N-CDMA Lateral N-Channel RF Power MOSFETs
  248. MRF6S9125N, - RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for broadband commercial and industrial applications withfrequencies up to 1000 MHz. The high gain and broadband performance ofthese devices make them ideal for large - signal, common- source amplifierapplications in 28 volt base station equipment.N-CDMA Application• Typical Single-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ =950 mA, Pout = 27 Watt Avg., Full Frequency Band (865-960 MHz), IS-95CDMA (Pilot, Sync, Paging,
  249. MRF7S19100N - 1930–1990 MHz, 29 W Avg., 28V Single W–CDMA Lateral N–Channel RF Power MOSFETs The MRF7S19100NR1 and MRF7S19100NBR1 are designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.Link Product PictureMRF7S19100N Features * Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 29 Watts Avg., Full Frequency Band, 3GPP Test
  250. MRF7S19100N - RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for CDMA base station applications with frequencies from 1930 to1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To beused in Class AB and Class C for PCN - PCS/cel lular radi o and WLLapplications.• Typical Single- Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =1000 mA, Pout = 29 Watts Avg., Full Frequency Band, 3GPP Test Model 1,64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input SignalPAR
  251. MRF7S21170H - 2110–2170 MHz, 50 W Avg., 28V Single W–CDMA Lateral N–Channel RF Power MOSFETs The MRF7S21170HR3 and MRF7S21170HSR3 are designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.Link Product PictureMRF7S21170H Features * Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 50 Watts Avg., Full Frequency Band, 3GPP Test
  252. MRF8372 - Rf Low Power Transistor Npn Silicon
  253. MRF8372R1 - RF LOW POWER TRANSISTOR NPN SILICON
  254. MRF8372R2 - RF LOW POWER TRANSISTOR NPN SILICON
  255. MRF840 - Rf Power Transistor Npn Silicon
  256. MRF842 - Rf Power Transistor Npn Silicon
  257. MRF847 - Rf Power Transistor Npn Silicon
  258. MRF848 - Rf Power Transistor
  259. MRF857 - Npn Silicon Rf Power Transistor
  260. MRF857 - Npn Silicon Rf Power Transistor
  261. MRF857D - NPN SILICON RF POWER TRANSISTOR
  262. MRF857S - NPN SILICON RF POWER TRANSISTOR
  263. MRF858 - Npn Silicon Rf Power Transistor
  264. MRF858S - NPN SILICON RF POWER TRANSISTOR
  265. MRF859 - Npn Silicon Rf Power Transistor
  266. MRF859S - NPN SILICON RF POWER TRANSISTOR
  267. MRF891 - Rf Power Transistors Npn Silicon
  268. MRF891S - RF POWER TRANSISTORS NPN SILICON
  269. MRF894 - Rf Power Transistor Npn Silicon
  270. MRF897 - Rf Power Transistor Npn Silicon
  271. MRF897R - Rf Power Transistor Npn Silicon
  272. MRF898 - Rf Power Transistor Npn Silicon
  273. MRF899 - Rf Power Transistor Npn Silicon
  274. MRF9002R2 - Rf Power Field Effect Transistor Array
  275. MRF9002RS - Rf Power Field Effect Transistor Array
  276. MRF9011 - The Rf Line NPN Silicon High-Frequency Transistor
  277. MRF9011L - The Rf Line NPN Silicon High-Frequency Transistor
  278. MRF9011LT1 - NPN Silicon High-Frequency Transistor
  279. MRF9030 - Rf Power Field Effect Transistors
  280. MRF9030 - The Rf Sub-micron Mosfet Line Rf Power Field Effect Transistors N-channel Enhancement-mode Lateral Mosfets
  281. MRF9030D - The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
  282. MRF9030LR1 - The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
  283. MRF9030LSR1 - The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
  284. MRF9030MBR1 - The Rf Sub-micron Mosfet Line Rf Power Field Effect Transistors N-channel Enhancement-mode Lateral Mosfets
  285. MRF9030MR1 - The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
  286. MRF9030R1 - RF POWER FIELD EFFECT TRANSISTORS
  287. MRF9030SR1 - RF POWER FIELD EFFECT TRANSISTORS
  288. MRF9045 - Rf Power Field Effect Transistors
  289. MRF9045LSR1 - MRF9045R1, MRF9045LSR1 945 Mhz, 45 W, 28V Lateral N-channel Broadband RF Power MOSFETs
  290. MRF9045MBR1 - RF POWER FIELD EFFECT TRANSISTORS
  291. MRF9045MR1 - RF POWER FIELD EFFECT TRANSISTORS
  292. MRF9045R1 - MRF9045R1, MRF9045LSR1 945 Mhz, 45 W, 28V Lateral N-channel Broadband RF Power MOSFETs
  293. MRF9045SR1 - MRF9045R1, MRF9045LSR1 945 Mhz, 45 W, 28V Lateral N-channel Broadband RF Power MOSFETs
  294. MRF9060 - 945 Mhz, 60 W, 26V Lateral N-channel Broadband Rf Power Mosfets
  295. MRF9060MBR1 - The Rf Sub-micron Mosfet Line Rf Power Field Effect Transistors N-channel Enhancement-mode Lateral Mosfets
  296. MRF9060MR1 - The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
  297. MRF9060R1 - 945 MHz, 60 W, 26V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
  298. MRF9060S - 945 MHz, 60 W, 26V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
  299. MRF9060SR1 - 945 MHz, 60 W, 26V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
  300. MRF9080 - Rf Power Field Effect Transistors
  301. MRF9080LSR3 - RF POWER FIELD EFFECT TRANSISTORS
  302. MRF9080R3 - RF POWER FIELD EFFECT TRANSISTORS
  303. MRF9080S - MRF9080, MRF9080R3, MRF9080SR3, MRF9080LSR3 GSM 900 Mhz, 75 W, 26V Lateral N-channel Broadband RF Power MOSFETs
  304. MRF9080SR3 - RF POWER FIELD EFFECT TRANSISTORS
  305. MRF9085 - 880 Mhz, 90 W, 26V Lateral N-channel Rf Power Mosfets
  306. MRF9085LR3 - 880 MHz, 90 W, 26V LATERAL N-CHANNEL RF POWER MOSFETs
  307. MRF9085LSR3 - 880 MHz, 90 W, 26V LATERAL N-CHANNEL RF POWER MOSFETs
  308. MRF9085R3 - MRF9085, MRF9085R3, MRF9085SR3, MRF9085LSR3 880 Mhz, 90 W, 26V Lateral N-channel RF Power MOSFETs
  309. MRF9085S - MRF9085, MRF9085R3, MRF9085SR3, MRF9085LSR3 880 Mhz, 90 W, 26V Lateral N-channel RF Power MOSFETs
  310. MRF9085SR3 - MRF9085, MRF9085R3, MRF9085SR3, MRF9085LSR3 880 Mhz, 90 W, 26V Lateral N-channel RF Power MOSFETs
  311. MRF9100 - Gsm/edge 900 Mhz, 110 W, 26V Lateral N-channel Rf Power Mosfets
  312. MRF9100L - MRF9100, MRF9100R3, MRF9100SR3 Gsm/edge 900 Mhz, 110 W, 26V Lateral N-channel RF Power MOSFETs
  313. MRF9100LS - MRF9100, MRF9100R3, MRF9100SR3 Gsm/edge 900 Mhz, 110 W, 26V Lateral N-channel RF Power MOSFETs
  314. MRF9100R3 - GSM/EDGE 900 MHz, 110 W, 26V LATERAL N-CHANNEL RF POWER MOSFETs
  315. MRF9100SR3 - GSM/EDGE 900 MHz, 110 W, 26V LATERAL N-CHANNEL RF POWER MOSFETs
  316. MRF9120 - Rf Power Field Effect Transistors
  317. MRF9120LR3 - RF Power Field Effect Transistors
  318. MRF9120R3 - RF Power Field Effect Transistors
  319. MRF9120S - MRF9120, MRF9120S 880 Mhz, 120 W, 26V Lateral N-channel RF Power MOSFETs
  320. MRF9130L - Rf Power Field Effect Transistors
  321. MRF9130LR3 - RF Power Field Effect Transistors
  322. MRF9130LSR3 - RF Power Field Effect Transistors
  323. MRF9135L - Rf Power Field Effect Transistors
  324. MRF9135LR3 - RF POWER FIELD EFFECT TRANSISTORS
  325. MRF9135LSR3 - RF POWER FIELD EFFECT TRANSISTORS
  326. MRF917T1 - Low Noise High Frequency Transistor
  327. MRF9180 - 880 Mhz, 170 W, 26V Lateral N-channel Rf Power Mosfets
  328. MRF9180S - 880 MHz, 170 W, 26V LATERAL N-CHANNEL RF POWER MOSFETs
  329. MRF9210 - Rf Power Field Effect Transistor
  330. MRF9210R3 - RF Power Field Effect Transistor
  331. MRF927T1 - Low Noise High Frequency Transistor
  332. MRF927T3 - LOW NOISE HIGH FREQUENCY TRANSISTOR
  333. MRF9411LT1 - NPN Silicon Low Noise, High-Frequency Transistors
  334. MRF947AT1 - NPN Silicon Low Noise, High-Frequency Transistors
  335. MRF947BT1 - NPN Silicon Low Noise, High-Frequency Transistors
  336. MRF947T1 - NPN Silicon Low Noise, High-Frequency Transistors
  337. MRF947T3 - NPN Silicon Low Noise, High-Frequency Transistors
  338. MRF949T1 - Low Noise Transistors
  339. MRF9511LT1 - NPN Silicon Low Noise, High-Frequency Transistors
  340. MRF957T1 - NPN Silicon Low Noise, High-Frequency Transistors
  341. MRF959T1 - Low Noise Transistors
  342. MRF9745T1 - High Frequency Power Transistor Ldmos Fet
  343. MRF9811T1 - High Frequency Gaas Fet Transistor
  344. MRF9820T1 - Surface Mount Low Noise Enhancement Mode Gaas Cascode
  345. MRF9822T1 - High Frequency Power Transistor Gaas Phemt
  346. MRFA2600 - Rf Power Amplifier
  347. MRFA2602 - Rf Power Amplifier
  348. MRFA2604 - Rf Power Amplifier
  349. MRFG35002N6T1 - 3.5 GHz, 1.5 W, 6V Power FET GaAs PHEMTThe MRFG35002N6T1 is designed for WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications..# Typical Single–Carrier W–CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158.5 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain: 10 dB Drain Efficiency: 27% ACPR @ 5 MHz Offset: –41 dBc in 3.
  350. MRFG35003M6T1 - Gallium Arsenide Phemt
  351. MRFG35003MT1 - The Rf Gaas Line Gallium Arsenide Phemt Rf Power Field Effect Transistor
  352. MRFG35003N6 - Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterizedfrom 0.5 to 5.0 GHz. Device is unmatched and is characterized for use inClass AB Customer Premise Equipment (CPE) applications.• Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 6 Volts,IDQ = 180 mAOutput Power — 450 mWattsPower Gain — 9 dBEfficiency — 24%• 3 Watts P1dB @ 3.55 GHz• Excellent Phase Linearity and Group Delay Characteristics• High Gain, High Efficiency and High Linearity• N Suffix Indicates Lead-Free Termina
  353. MRFG35010A - 3.5 GHz, 10 W, 12V Power FET GaAs PHEMTsThe MRFG35010AR1 and MRFG35010AR5 are designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Devices are unmatched and are suitable for use in Class AB or ClassA linear base station applications.MRFG35010A Features * Typical Single–Carrier W–CDMA Performance: VDD = 12 Volts, IDQ = 140 mA, Pout = 1 Watt Avg., f = 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain: 1
  354. MRFG35010ANT1 - : 3.5 GHz, 9 W, 12V Power FET GaAs PHEMT SUBSCRIBE The is designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. Features * Typical Single–Carrier W–CDMA Performance: VDD = 12 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain
  355. MRFG35010MT1 - Gallium Arsenide Phemt
  356. MRFIC0001 - Quadrature Modulator Integrated Circuit
  357. MRFIC0903 - Antenna Switch Gaas Monolithic Integrated Circuit
  358. MRFIC0904 - 900 Mhz Gaas Two Stage Driver Amp Integrated Circuit
  359. MRFIC0912 - 900 Mhz Gaas Integrated Power Amplifier
  360. MRFIC0913 - 900 Mhz Gsm Cellular Integrated Power Amplifier Gaas Monolithic Integrated Circuit
  361. MRFIC0914 - 900 Mhz Paging Power Amplifier Si Monolithic Integrated Circuit
  362. MRFIC0915T1 - Data Sheet: 100 to 2500 MHZ General Purpose RF Cascode Amplifier
  363. MRFIC0916 - Silicon General Purpose Rf Cascode Amplifier
  364. MRFIC0916T1 - Data Sheet: 100 to 2500 MHZ General Purpose RF Cascode Amplifier
  365. MRFIC0917 - 900 Mhz Gsm Cellular Integrated Power Amplifier Gaas Monolithic Integrated Circuit
  366. MRFIC0931 - Balanced Transmit Mixer Silicon Monolithic Integrated Circuit
  367. MRFIC0970R2 - Technical Data Sheet: 3.2V GSM GAAS Integrated Power Amplifier
  368. MRFIC1501 - 1.6 Ghz Gaas Low Noise Amplifier
  369. MRFIC1501R2 - Data Sheet: 1.6 GHZ GPS GAAS Low Noise Amplifier
  370. MRFIC1502 - 1.575 Ghz Gps Downconverter
  371. MRFIC1504 - Intergrated Gps Downconverter
  372. MRFIC1504R2 - INTERGRATED GPS DOWNCONVERTER
  373. MRFIC1801 - 1.8 Ghz Transmit/receive Antenna Switch Gaas Monolithic Integrated Circuit
  374. MRFIC1803 - 1.8 Ghz Upmixer, Exciter and Lo Amp Gaas Monolithic Integrated Circuit
  375. MRFIC1804 - 1.8 Ghz Low Noise Amplifier and Downmixer Gaas Monolithic Integrated Circuit
  376. MRFIC1805 - 1.9 Ghz Power Amplifier Gaas Monolithic Integrated Circuit
  377. MRFIC1806 - 1.8 Ghz Driver Amplifier and Ramp Circuit Gaas Monolithic Integrated Circuit
  378. MRFIC1807 - 1.8 Ghz Power Amplifier and Transmit/receive Switch Gaas Monolithic Integrated Circuit
  379. MRFIC1808 - 1.9 GHz GaAs LOW NOISE AMPLIFIER
  380. MRFIC1808DMR2 - Data Sheet: GHZ GAAS Low Noise Amplifier
  381. MRFIC1813 - 1.9 Ghz Upmixer and Exciter Amplifier
  382. MRFIC1814 - 1.8 Ghz Low Noise Amplifier and Downmixer
  383. MRFIC1817 - 1700-1900 Mhz Mmic Dcs1800/pcs1900 Integrated Power Amplifier Gaas Monolithic Integrated Circuit
  384. MRFIC1818 - 1700-1900 Mhz Mmic Dcs1800/pcs1900 Integrated Power Amplifier Gaas Monolithic Integrated Circuit
  385. MRFIC1870 - 3.2V Dcs/pcs Gaas Integrated Power Amplifier
  386. MRFIC1870D - 3.2V DCS/PCS GaAs Integrated Power Amplifier
  387. MRFIC1870PP - 3.2V DCS/PCS GaAs Integrated Power Amplifier
  388. MRFIC1870R2 - Product Preview Data Sheet: 3.2V Dcs/pcs GAAS Integrated Power Amplifier
  389. MRFIC1884 - Dual-band Cdma Upconverter
  390. MRFIC1884R2 - Dual-Band CDMA Upconverter
  391. MRFIC2001 - 900 Mhz Downconverter Lna/mixer Silicon Monolithic Integrated Circuit
  392. MRFIC2002 - 900 Mhz Tx-mixer Silicon Monolithic Integrated Circuit
  393. MRFIC2004 - 900 Mhz Driver & Ramp Silicon Monolithic Integrated Circuit
  394. MRFIC2006 - 900 Mhz 2 Stage Pa Silicon Monolithic Integrated Circuit
  395. MRFIC2101 - 900 Mhz Tx-mixer/exciter Silicon Monolithic Integrated Circuit
  396. MRFIC2401 - 2.4 Ghz Downconverter Gaas Monolithic Integrated Circuit
  397. MRFIC2403 - 2.4 Ghz Power Amplifier Gaas Monolithic Integrated Circuit
  398. MRFIC2404 - 2.4 Ghz Exciter Amplifier Gaas Monolithic Integrated Circuit
  399. MRFIC2406 - 2.4 Ghz Integrated Upmixer Gaas Monolithic Integrated Circuit
  400. MRFIC2408 - Single Chip Rf Power Amplifier
  401. MRFIC2408PP - single chip RF Power Amplifier
  402. MRS1504 - Standard Recovery Rectifier 1.5 Amperes 400 Volts
  403. MRS1504T3 - STANDARD RECOVERY RECTIFIER 1.5 AMPERES 400 VOLTS
  404. MRW2001 - Microwave Power Transistors
  405. MRW2003 - MICROWAVE POWER TRANSISTORS
  406. MRW3001 - Microwave Power Transistors
  407. MRW3003 - MICROWAVE POWER TRANSISTORS
  408. MRW3005 - MICROWAVE POWER TRANSISTORS
  409. MRW54001 - Microwave Linear Power Transistors
  410. MSA1022CT1 - Pnp Rf Amplifier Transistor Surface Mount
  411. MSB1218A-RT1 - Pnp General Purpose Amplifier Transistors Surface Mount
  412. MSB1218A-ST1 - PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
  413. MSB709-RT1 - Pnp General Purpose Amplifier Transistor Surface Mount
  414. MSB710-QT1 - Pnp General Purpose Amplifier Transistors Surface Mount
  415. MSB710-RT1 - PNP General Purpose Amplifier Transistors Surface Mount
  416. MSB92WT1 - Pnp General Purpose High Voltage Transistors Surface Mount
  417. MSC2295-BT1 - Npn Rf Amplifier Transistors Surface Mount
  418. MSC2295-CT1 - NPN RF Amplifier Transistors Surface Mount
  419. MSC3130 - Npn Rf Amplifier Transistors Surface Mount
  420. MSC3130T1 - NPN RF Amplifier Transistors Surface Mount
  421. MSC8101 - Network Digital Signal Processor
  422. MSC8101M1250F - Network Digital Signal Processor
  423. MSC8101M1375F - Network Digital Signal Processor
  424. MSC8101M1500F - Network Digital Signal Processor
  425. MSD1010T1 - PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT
  426. MSD1328-RT1 - Npn Low Voltage Output Amplifier Surface Mount
  427. MSD1819A-RT1 - Npn General Purpose Amplifier Transistors Surface Mount
  428. MSD1819A-ST1 - NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
  429. MSD42WT1 - Npn General Purpose High Voltage Transistors Surface Mount
  430. MSD601-RT1 - Npn General Purpose Amplifier Transistors Surface Mount
  431. MSD601-ST1 - NPN General Purpose Amplifier Transistors Surface Mount
  432. MSD602RT1 - NPN General Purpose Amplifier Transistor Surface Mount
  433. MSD6100 - Dual Switching Diode Common Cathode
  434. MSD6150 - Dual Diode Common Anode
  435. MSE08AZ60_1J35D - Mask Set Errata
  436. MSR860 - Soft Recovery Power Rectifier 8.0 Amperes 600 Volts
  437. MSRB8601 - Soft Recovery Power Rectifier 8.0 Amperes 600 Volts
  438. MSW3SDK000AA - PC Master Software: Creation of Advanced Control Pages
  439. MTB10N40E - Tmos Power Fet 10 Amperes
  440. MTB1306 - Tmos Power Fet 75 Amperes
  441. MTB15N06E - Tmos Power Fet 15 Amperes
  442. MTB15N06V - Tmos Power Fet 15 Amperes
  443. MTB16N25E - Tmos Power Fet 16 Amperes
  444. MTB1N100E - Tmos Power Fet 1.0 Amperes 1000 Volts
  445. MTB20N20E - Tmos Power Fet 20 Amperes 200 Volts
  446. MTB23P06 - Tmos Power Fet 23 Amperes 60 Volts
  447. MTB23P06 - Tmos Power Fet 23 Amperes 60 Volts
  448. MTB23P06E - TMOS POWER FET 23 AMPERES 60 VOLTS
  449. MTB23P06V - TMOS POWER FET 23 AMPERES 60 VOLTS
  450. MTB29N15E - Tmos Power Fet 29 Amperes 150 Volts
  451. MTB2N40E - Tmos Power Fet 2.0 Amperes 400 Volts
  452. MTB2N60E - Tmos Power Fet 2.0 Amperes 600 Volts
  453. MTB2P50E - Tmos Power Fet 2.0 Amperes 500 Volts
  454. MTB30N06VL - Tmos Power Fet 30 Amperes 60 Volts
  455. MTB30P06 - Tmos Power Fet 30 Amperes 60 Volts
  456. MTB30P06V - TMOS POWER FET 30 AMPERES 60 VOLTS
  457. MTB33N10E - Tmos Power Fet 33 Amperes 100 Volts
  458. MTB36N06E - Tmos Power Fet 36 Amperes 60 Volts
  459. MTB36N06V - Tmos Power Fet 32 Amperes 60 Volts
  460. MTB3N100E - TMOS POWER FET 3.0 AMPERES 1000 VOLTS
  461. MTB3N120E - Tmos Power Fet 3.0 Amperes 1200 Volts
  462. MTB3N60E - Tmos Power Fet 3.0 Amperes 600 Volts
  463. MTB40N10E - Tmos Power Fet 40 Amperes 100 Volts
  464. MTB4N80E - Tmos Power Fet 4.0 Amperes 800 Volts
  465. MTB4N80E1 - Tmos Power Fet 4.0 Amperes 800 Volts
  466. MTB50N06EL - Tmos Power Fet Logic Level 50 Amperes 60 Volts
  467. MTB50N06V - Tmos Power Fet 42 Amperes 60 Volts
  468. MTB50N06VL - Tmos Power Fet 42 Amperes 60 Volts
  469. MTB50P03HDL - Tmos Power Fet Logic Level 50 Amperes 30 Volts
  470. MTB52N06V - Tmos Power Fet 52 Amperes 60 Volts
  471. MTB52N06VL - Tmos Power Fet 52 Amperes 60 Volts
  472. MTB52N06VT4 - Transistor
  473. MTB55N06Z - Tmos Power Fet 55 Amperes 60 Volts
  474. MTB60N06 - Tmos Power Fet 60 Amperes 60 Volts
  475. MTB60N06HD - TMOS POWER FET 60 AMPERES 60 VOLTS
  476. MTB6N60 - Tmos Power Fet 6.0 Amperes 600 Volts
  477. MTB6N60 - Tmos Power Fet 6.0 Amperes 600 Volts
  478. MTB6N60E - TMOS POWER FET 6.0 AMPERES 600 VOLTS
  479. MTB6N60E1 - TMOS POWER FET 6.0 AMPERES 600 VOLTS
  480. MTB75N03HDL - Tmos Power Fet Logic Level 75 Amperes 25 Volts
  481. MTB75N05HD - Tmos Power Fet 75 Amperes 50 Volts
  482. MTB75N06 - Tmos Power Fet 75 Amperes 60 Volts
  483. MTB75N06HD - TMOS POWER FET 75 AMPERES 60 VOLTS
  484. MTB8N50E - Tmos Power Fet 8.0 Amperes 500 Volts
  485. MTB9N25E - Tmos Power Fet 9.0 Amperes 250 Volts
  486. MTD10N05E - Tmos4 Power Field Effect Transistor
  487. MTD1302 - Tmos Power Fet 20 Amperes 30 Volts
  488. MTD15N06 - Tmos Power Fet 15 Amperes 60 Volts
  489. MTD15N06 - Tmos Power Fet 15 Amperes 60 Volts Rds(on) = 0.085 Ohm
  490. MTD15N06V - TMOS POWER FET 15 AMPERES 60 VOLTS
  491. MTD15N06VL - TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM
  492. MTD1N40 - Power Field Effect Transistor
  493. MTD1N50E - Tmos Power Fet 1.0 Ampere 500 Volts Rds(on) = 5.0 Ohm
  494. MTD1N60E - Tmos Power Fet 1.0 Ampere 600 Volts Rds(on) = 8.0 Ohm
  495. MTD1N80E - Tmos Power Fet 1.0 Amperes 800 Volts Rds(on) = 12 Ohm
  496. MTD1P50E - Tmos Power Fet 1.0 Amperes 500 Volts 15 Ohm
  497. MTD20N03HDL - TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
  498. MTD20N03HL - HDTMOS E-FET High Density Power FET DPAK for Surface Mount
  499. MTD20N06 - Tmos Power Fet 20 Amperes 60 Volts Rds(on) = 0.080 Ohm
  500. MTD20N06HD - Tmos Power Fet 20 Amperes 60 Volts Rds(on) = 0.045 Ohm
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