MW6S010N (Motorola)
Electronic component documentation (datasheet) «MW6S010N» (RF & Microwaves), manufacturer Motorola. Download datasheet file:
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Partname | MW6S010N |
Description | RF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETsDesigned for ClassA or Class AB base station applications with frequenciesup to 1500 MHz. Suitable for analog and digital modulation and multicarrieramplifier applications.• Typical Two-Tone Performance at 960 MHz: VDD = 28 Volts, IDQ =125 mA, Pout = 10 Watts PEPPower Gain 18 dBDrain Efficiency 32%IMD -37 dBc• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CWOutput PowerFeatures• Characterized with Se |
Functional | RF & Microwaves | Manufacturer | Motorola, Inc. | |
Site | www.freescale.com |
| Size | Pages: 12, 1.19Mb |
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