NGB8206N (ON Semiconductor)
Electronic component documentation (datasheet) «NGB8206N» (IGBTs (Insulated Gate Bipolar Transistors)), manufacturer ON Semiconductor. Download datasheet file:
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| Partname | NGB8206N |
| Description | Ignition IGBT 20 A, 350 V, N-channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) Featuresmonolithic Circuitry Integrating Esd and Over−Voltage Clampedprotection For Use in Inductive Coil Drivers Applications. Primary Usesinclude Ignition, Direct Fuel Injection, or Wherever High Voltage Andhigh Current Switching is Required. |
| Functional | IGBTs (Insulated Gate Bipolar Transistors) | | Manufacturer | ON Semiconductor |  |
| Site | www.onsemi.com |
| | | Size | Pages: 8, 69.1Kb |
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