NSS30070MR6T1G (ON Semiconductor) - 30V 700mA LOW VCE(sat) PNP Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Features and Applications Features High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta) Applications Load Switching, Batte, Low VCE(sat)

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NSS30070MR6T1G (ON Semiconductor)

Electronic component documentation (datasheet) «NSS30070MR6T1G» (Low VCE(sat)), manufacturer ON Semiconductor. Download datasheet file:

Datasheet NSS30070MR6T1G manufacturer ON Semiconductor

Partname	NSS30070MR6T1G
Description	30V 700mA LOW VCE(sat) PNP Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Features and Applications Features High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta) Applications Load Switching, Batte
Functional	Low VCE(sat)
Manufacturer	ON Semiconductor
Site	www.onsemi.com

Size	Pages: 4, 64.82Kb
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