NSS30071MR6T1G (ON Semiconductor) - 30V 700mA LOW VCE(sat) Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Features and Applications Features High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta) Load Switching, Battery Charging, Exte, Low VCE(sat)

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NSS30071MR6T1G (ON Semiconductor)

Подробное описание (datasheet) электронного компонента «NSS30071MR6T1G» (Low VCE(sat)), производства ON Semiconductor. Выберите наиболее удобный формат.

Datasheet NSS30071MR6T1G производства ON Semiconductor

Маркировка	NSS30071MR6T1G
Описание	30V 700mA LOW VCE(sat) Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Features and Applications Features High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta) Load Switching, Battery Charging, Exte
Функционал	Low VCE(sat)
Производитель	ON Semiconductor
Сайт	www.onsemi.com

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