BLC6G20LS-75 (Philips) - UHF power LDMOS transistor75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz,A supply voltage of 28V and an IDq of 550 mA: Output power = 29.5 W (AV) Gain =19 dB Efficiency = 38.5 pct ACPR400 = -62.5 dBc ACPR600 = -72 dBc EVMrms = 1.5 pct Easy power contr, LDMOS

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BLC6G20LS-75 (Philips)

Electronic component documentation (datasheet) «BLC6G20LS-75» (LDMOS), manufacturer Philips. Download datasheet file:

Datasheet BLC6G20LS-75 manufacturer Philips

Partname	BLC6G20LS-75
Description	UHF power LDMOS transistor75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz,A supply voltage of 28V and an IDq of 550 mA: Output power = 29.5 W (AV) Gain =19 dB Efficiency = 38.5 pct ACPR400 = -62.5 dBc ACPR600 = -72 dBc EVMrms = 1.5 pct Easy power contr
Functional	LDMOS
Manufacturer	Philips Semiconductors
Site	www.semiconductors.philips.com

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BLC6G20-75, BLC6G20LS-75

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