BLF4G22-100 (Philips) - UHF power LDMOS transistor100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical 2-Carrier W-CDMA performance atA supply voltage of 28V and an IDq of 900 mA: Load power = 25 W (AV) Gain = 13.5 dB (typ) Efficiency = 26 pct. (typ) ACPR = -41 dBc (typ) IMD3 = -37 dBc (typ) Easy power control Integrated ESD protection Excellent, LDMOS

Archive 1.687.043 components

Datasheets

Cross-reference

Search field	Component part name	Manufacturer

BLF4G22-100 (Philips)

Electronic component documentation (datasheet) «BLF4G22-100» (LDMOS), manufacturer Philips. Download datasheet file:

Datasheet BLF4G22-100 manufacturer Philips

Partname	BLF4G22-100
Description	UHF power LDMOS transistor100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. FeaturesTypical 2-Carrier W-CDMA performance atA supply voltage of 28V and an IDq of 900 mA: Load power = 25 W (AV) Gain = 13.5 dB (typ) Efficiency = 26 pct. (typ) ACPR = -41 dBc (typ) IMD3 = -37 dBc (typ) Easy power control Integrated ESD protection Excellent
Functional	LDMOS
Manufacturer	Philips Semiconductors
Site	www.semiconductors.philips.com

Size	Pages: 133, 109.97Kb
Download file	Adobe PDF WinZIP archive
Preview	HTML priview

In this file

BLF4G20LS-110B, BLF4G22-100, BLF4G22S-100

ChipFind: search «BLF4G22-100» on Russian online stock