K4M281633F - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633F-C - 2m X 16bit X 4 Banks Mobile Sdram In 54fbga
K4M281633F-F1L - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633F-G - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633F-L - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633F-N - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633F-R(B)E/N/G/C/L/F1H - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M281633F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4M281633F-R(B)E/N/G/C/L/F1L - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M281633F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4M281633F-R(B)E/N/G/C/L/F75 - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M281633F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4M281633F-RE - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633H - 2m X 16bit X 4 Banks Mobile Sdram In 54fbga
K4M281633H-RF1H - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633H-RF1L - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633H-RF75 - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633H-RG1H - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633H-RG1L - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633H-RG75 - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633H-RL1H - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633H-RL1L - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633H-RL75 - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633H-RN1H - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633H-RN1L - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M281633H-RN75 - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M28163LF - 2m X 16bit X 4 Banks Mobile Sdram In 54fbga
K4M28163LF-C - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M28163LF-L - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M28163LF-N - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M28163LF-R(B)E/N/S/C/L/R1H - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M28163LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4M28163LF-R(B)E/N/S/C/L/R1L - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M28163LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4M28163LF-R(B)E/N/S/C/L/R75 - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M28163LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4M28163LF-R1L - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M28163LF-R75 - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M28163LF-RE - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M28163LF-S - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M28163PD - K4M28163PD 2M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 1.8/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 30mA/200uA ; Speed = 1L,15 ; Mobile Function = Pasr,tcsr,ds ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4M28163PD-BG - K4M28163PD 2M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 1.8/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 30mA/200uA ; Speed = 1L,15 ; Mobile Function = Pasr,tcsr,ds ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4M28163PD-BS - K4M28163PD 2M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 1.8/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 30mA/200uA ; Speed = 1L,15 ; Mobile Function = Pasr,tcsr,ds ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4M28163PD-RBG/S - K4M28163PD 2M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 1.8/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 30mA/200uA ; Speed = 1L,15 ; Mobile Function = Pasr,tcsr,ds ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4M28163PD-RG - K4M28163PD 2M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 8Mx16 ; Vdd/Vddq(V) = 1.8/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 30mA/200uA ; Speed = 1L,15 ; Mobile Function = Pasr,tcsr,ds ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4M28163PF - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M28163PF-F75 - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M28163PF-R - 2m X 16bit X 4 Banks Mobile Sdram In 54fbga
K4M28163PF-R(B)G/F1L - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M28163PF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4M28163PF-R(B)G/F90 - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4M28163PF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.