K4S283233F-F1H - 1m X 32bit X 4 Banks Mobile Sdram In 90fbga
K4S283233F-F1L - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-F60 - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-F75 - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-FE - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-FHE - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-G - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-L - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S283233F-MEE/N/I/P - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S283233F-ME/N/I/P1H - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S283233F-ME/N/I/P1L - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S283233F-ME/N/I/P75 - K4S283233F 1M X 32Bit X 4 Banks Sdram in 90FBGA ; Organization = 4Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = E,n,i,p ; Current(Icc1/Icc6) = 130mA/800uA ; Speed = 75,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S283233F-N - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S28323LF - 1m X 32bit X 4 Banks Mobile Sdram In 90fbga
K4S28323LF-ER1H - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S28323LF-F - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S28323LF-F(H)E/N/S/C/L/R1H - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S28323LF-F(H)E/N/S/C/L/R1L - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S28323LF-F(H)E/N/S/C/L/R60 - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S28323LF-F(H)E/N/S/C/L/R75 - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S28323LF-FR60 - 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S510432D - 2M x 4Bit x 4 Banks SDRAMhe K4S510432D is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S510432D-UC(L)75 - 2M x 4Bit x 4 Banks SDRAMhe K4S510432D is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S510432M - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S510432M-TC1H - 512mbit Sdram 32m X 4bit X 4 Banks Synchronous Dram Lvttl
K4S510432M-TC1L - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S510432M-TC75 - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S510432M-TC/TL1H - K4S510432M 32M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Monolithic
K4S510432M-TC/TL1L - K4S510432M 32M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Monolithic
K4S510432M-TC/TL75 - K4S510432M 32M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 128Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Monolithic
K4S510432M-TL1H - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S510432M-TL1L - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S510432M-TL75 - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S510832C - K4S510832C 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
K4S510832C-KC/L1H - K4S510832C 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
K4S510832C-KC/L1L - K4S510832C 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
K4S510832C-KC/L75 - K4S510832C 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
K4S510832C-KC/L7C - K4S510832C 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 7C,75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = DDP
K4S510832D - 16M x 8Bit x 4 Banks SDRAMThe K4S510832D is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 8 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S510832D-UC(L)75 - 16M x 8Bit x 4 Banks SDRAMThe K4S510832D is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 8 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S510832M - 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S510832M-TC1H - 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S510832M-TC1L - 16m X 8bit X 4 Banks Synchronous Dram Lvttl
K4S510832M-TC75 - 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S510832M-TC/TL1H - K4S510832M 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Monolithic
K4S510832M-TC/TL1L - K4S510832M 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Monolithic
K4S510832M-TC/TL75 - K4S510832M 16M X 8Bit X 4 Banks Synchronous DRAM ; Organization = 64Mx8 ; Bank/ Interface = 4B/LVTTL ; Refresh = 8K/64ms ; Speed = 75,1H,1L ; Package = 54TSOP2 ; Power = C,l ; Production Status = Mass Production ; Comments = Monolithic
K4S510832M-TL1H - 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S510832M-TL1L - 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S510832M-TL75 - 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S511533C - K4S511533C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S511533C-YL/N/P - K4S511533C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S511533C-YL/N/P1H - K4S511533C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S511533C-YL/N/P1L - K4S511533C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S511533C-YL/N/P80 - K4S511533C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S511533F - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S511533F-F1H - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S511533F-F1L - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S511533F-F75 - 8m X 16bit X 4 Banks Mobile Sdram In 54fbga
K4S511533F-L - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S511533F-Y(P)C/L/F1H - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S511533F-Y(P)C/L/F1L - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S511533F-Y(P)C/L/F75 - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S511533F-YC - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S51153LC - K4S51153LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 80mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S51153LC-YG/S - K4S51153LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 80mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S51153LC-YG/S15 - K4S51153LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 80mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S51153LC-YG/S1H - K4S51153LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 80mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S51153LC-YXXX - K4S51153LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(2CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 80mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S51153LF - 8m X 16bit X 4 Banks Mobile Sdram In 54fbga
K4S51153LF-Y(P)C/L/F1H - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S51153LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S51153LF-Y(P)C/L/F1L - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S51153LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S51153LF-Y(P)C/L/F75 - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S51153LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S51153PF - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S51153PF-YF - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S51153PF-YF1L - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S51153PF-YF75 - 8m X 16bit X 4 Banks Mobile Sdram In 54fbga
K4S51153PF-YF90 - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S51153PF-YPF - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S511633C-XXXX - K4S511633C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 145mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S511633C-YL/N1H - K4S511633C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 145mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S511633C-YL/N1L - K4S511633C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 145mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S511633C-YL/N80 - K4S511633C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 145mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S511633C-YL/N/P - K4S511633C 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 145mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S51163LC - K4S51163LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S51163LC-XXXX - K4S51163LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S51163LC-YG/S - K4S51163LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S51163LC-YG/S15 - K4S51163LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S51163LC-YG/S1H - K4S51163LC 8M X 16Bit X 4 Banks Mobile Sdram ; Organization = 32Mx16(1CS) ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S51163LF - 8M x 16Bit x 4 Banks Mobile SDRAMThe K4S51163LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S51163LF-Y(P)C/L/F1H - 8M x 16Bit x 4 Banks Mobile SDRAMThe K4S51163LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S51163LF-Y(P)C/L/F1L - 8M x 16Bit x 4 Banks Mobile SDRAMThe K4S51163LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S51163LF-Y(P)C/L/F75 - 8M x 16Bit x 4 Banks Mobile SDRAMThe K4S51163LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S51163PF - 8M x 16Bit x 4 Banks Mobile-SDRAMThe K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S51163PF-Y(P)F1L - 8M x 16Bit x 4 Banks Mobile-SDRAMThe K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S51163PF-Y(P)F75 - 8M x 16Bit x 4 Banks Mobile-SDRAMThe K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S51163PF-Y(P)F90 - 8M x 16Bit x 4 Banks Mobile-SDRAMThe K4S51163PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S513233C - K4S513233C 4M X 32Bit X 4 Banks Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 150mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S513233C-ML/N/P - K4S513233C 4M X 32Bit X 4 Banks Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 150mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S513233C-ML/N/P1H - K4S513233C 4M X 32Bit X 4 Banks Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 150mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S513233C-ML/N/P1L - K4S513233C 4M X 32Bit X 4 Banks Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 150mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S513233C-ML/N/P80 - K4S513233C 4M X 32Bit X 4 Banks Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 150mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S513233C-MXXX - K4S513233C 4M X 32Bit X 4 Banks Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 150mA/1800uA ; Speed = 80,1H,1L ; Mobile Function = no ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S513233F-M(E)C/L/F1H - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S513233F-M(E)C/L/F1L - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S513233F-M(E)C/L/F75 - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S51323L - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S51323LC - K4S51323LC 4M X 32Bit X 4 Banks Mobile Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S51323LC-MG/S - K4S51323LC 4M X 32Bit X 4 Banks Mobile Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S51323LC-MG/S15 - K4S51323LC 4M X 32Bit X 4 Banks Mobile Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S51323LC-MG/S1H - K4S51323LC 4M X 32Bit X 4 Banks Mobile Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S51323LC-MXXX - K4S51323LC 4M X 32Bit X 4 Banks Mobile Sdram ; Organization = 16Mx32 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = G,s ; Current(Icc1/Icc6) = 120mA/1600uA ; Speed = 1H,1L,15 ; Mobile Function = Pasr,tcsr ; Package = 90FBGA ; Production Status = Mass Production ; Comments = -
K4S51323LF - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S51323LF-F1H - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S51323LF-F1L - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S51323LF-F75 - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S51323LF-L - 4m X 32bit X 4 Banks Mobile Sdram In 90fbga
K4S51323LF-M(E)C/L/F1H - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S51323LF-M(E)C/L/F1L - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S51323LF-M(E)C/L/F75 - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S51323LF-MC - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S51323PF - 4M x 32Bit x 4 Banks Mobile-SDRAMThe K4S51323PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.
K4S561633C - K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/800uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S561633C-RBL/N/P - K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/800uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S561633C-RBL/N/P1H - K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/800uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S561633C-RBL/N/P1L - K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/800uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S561633C-RBL/N/P75 - K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/800uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S561633C-XXXX - K4S561633C-RL(N) 4M X 16Bit X 4 Banks Synchronous DRAM in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ; Temperature = L,n,p ; Current(Icc1/Icc6) = 85mA/800uA ; Speed = 1L,1H,75 ; Mobile Function = no ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S561633F - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-C - 4m X 16bit X 4 Banks Mobile Sdram In 54boc
K4S561633F-E - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-F1H - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-F1L - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-F75 - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-G - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-L - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-N - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-X - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-X(Z)E/N/G/C/L/F1H - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high
K4S561633F-X(Z)E/N/G/C/L/F1L - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high
K4S561633F-X(Z)E/N/G/C/L/F75 - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high
K4S561633F-XE - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S56163LC-RBF/R - K4S56163LC 4M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 65mA/750uA ; Speed = 15,1L,75,1H ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S56163LC-RBF/R15 - K4S56163LC 4M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 65mA/750uA ; Speed = 15,1L,75,1H ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S56163LC-RBF/R1H - K4S56163LC 4M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 65mA/750uA ; Speed = 15,1L,75,1H ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S56163LC-RBF/R1L - K4S56163LC 4M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 65mA/750uA ; Speed = 15,1L,75,1H ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S56163LC-RBF/R75 - K4S56163LC 4M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 65mA/750uA ; Speed = 15,1L,75,1H ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S56163LC-XXXX - K4S56163LC 4M X 16Bit X 4 Banks Mobile Sdram in 54CSP ; Organization = 16Mx16 ; Vdd/Vddq(V) = 2.5/2.5,2.5/1.8 ; Temperature = L,n,f,r,g,s,p ; Current(Icc1/Icc6) = 65mA/750uA ; Speed = 15,1L,75,1H ; Mobile Function = no or Pasr,tcsr ; Package = 54CSP ; Production Status = Mass Production ; Comments = -
K4S56163LF - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S56163LF-F1H - 4m X 16bit X 4 Banks Mobile Sdram In 54boc
K4S56163LF-F1L - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S56163LF-F75 - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S56163LF-G - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S56163LF-L - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S56163LF-N - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S56163LF-X(Z)E/N/G/C/L/F1H - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high
K4S56163LF-X(Z)E/N/G/C/L/F1L - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high
K4S56163LF-X(Z)E/N/G/C/L/F75 - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high
K4S56163LF-XE - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S56163PF - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S56163PF-F1L - 4m X 16bit X 4 Banks Mobile Sdram In 54fbga
K4S56163PF-F90 - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S56163PF-R(B)G/F1L - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S56163PF-R(B)G/F75 - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S56163PF-R(B)G/F90 - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGAThe K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S56163PF-RG - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S563233F - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S563233F-F(H)E/N/G/C/L/F60 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful forA variety of high bandwidth and
K4S563233F-F(H)E/N/G/C/L/F75 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful forA variety of high bandwidth and
K4S563233FHN - 2m X 32bit X 4 Banks Mobile Sdram In 90fbga
K4S563233FHN75 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S56323LF - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S56323LF-C - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S56323LF-F(H)E/N/S/C/L/R60 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful forA variety of high bandwidth and
K4S56323LF-F(H)E/N/S/C/L/R75 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful forA variety of high bandwidth and
K4S56323LF-FE - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S56323LF-L - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S56323LF-N - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S56323LF-R1L - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S56323LF-S - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S56323PF - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S56323PF-F(H)G/F75 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAhe K4S56323PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S56323PF-F(H)G/F90 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAhe K4S56323PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG\'s high performance CMOS technology.
K4S56323PF-F1L - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S56323PF-F75 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S56323PF-F90 - 2m X 32bit X 4 Banks Mobile Sdram In 90fbga
K4S56323PF-FG - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S640432C - K4S640432C 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,100,66
K4S640432C-TC/L10 - K4S640432C 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,100,66
K4S640432C-TC/L1H - K4S640432C 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,100,66
K4S640432C-TC/L1L - K4S640432C 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,100,66
K4S640432C-TC/L70 - K4S640432C 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,100,66
K4S640432C-TC/L80 - K4S640432C 4M X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = PC133,100,66
K4S640432D - 64mbit Sdram 4m X 4bit X 4 Banks Synchronous Dram Lvttl
K4S640432D-TC/L10 - K4S640432D 4MB X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
K4S640432D-TC/L1H - K4S640432D 4MB X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
K4S640432D-TC/L1L - K4S640432D 4MB X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
K4S640432D-TC/L75 - K4S640432D 4MB X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
K4S640432D-TC/L80 - K4S640432D 4MB X 4Bit X 4 Banks Synchronous DRAM ; Organization = 16Mx4 ; Bank/ Interface = 4B/LVTTL ; Refresh = 4K/64ms ; Speed = 75,80,1H,1L,10 ; Package = 54TSOP2 ; Power = C,l ; Production Status = Eol ; Comments = -
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