K4S561633F-X(Z)E/N/G/C/L/F75 (Samsung)
Electronic component documentation (datasheet) «K4S561633F-X(Z)E/N/G/C/L/F75» (256 Mb), manufacturer Samsung. Download datasheet file:
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Partname | K4S561633F-X(Z)E/N/G/C/L/F75 |
Description | 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOChe K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG\'s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful forA variety of high bandwidth, high |
Functional | 256 Mb | Manufacturer | Samsung semiconductor | |
Site | www.samsung.com |
| Size | Pages: 12, 114.04Kb |
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