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K4S56323LF-F(H)E/N/S/C/L/R75 (Samsung)

Electronic component documentation (datasheet) «K4S56323LF-F(H)E/N/S/C/L/R75» (256 Mb), manufacturer Samsung. Download datasheet file:



Datasheet K4S56323LF-F(H)E/N/S/C/L/R75 manufacturer Samsung
PartnameK4S56323LF-F(H)E/N/S/C/L/R75
Description2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGAThe K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful forA variety of high bandwidth and
Functional256 Mb
ManufacturerSamsung semiconductorSamsung
Sitewww.samsung.com
SizePages: 12, 140.97Kb
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K4S56323LF-F(H)E/N/S/C/L/R60, K4S56323LF-F(H)E/N/S/C/L/R75