K4T51043QC (Samsung) - 512Mb C-die DDR2 SDRAMhe 512Mb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 4 banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of, 512 Mb

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K4T51043QC (Samsung)

Electronic component documentation (datasheet) «K4T51043QC» (512 Mb), manufacturer Samsung. Download datasheet file:

Datasheet K4T51043QC manufacturer Samsung

Partname	K4T51043QC
Description	512Mb C-die DDR2 SDRAMhe 512Mb DDR2 SDRAM is organized asA 32Mbit x 4 I/Os x 4 banks device.This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.All of the control and address inputs are synchronized withA pair of
Functional	512 Mb
Manufacturer	Samsung semiconductor
Site	www.samsung.com

Size	Pages: 29, 630.07Kb
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In this file

K4T51043QC, K4T51043QC-ZC(L)E7, K4T51083QC-ZC(L)E7, K4T51163QC, K4T51163QC-ZC(L)E7

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