K7B321825M-QC65/75 (Samsung)
Electronic component documentation (datasheet) «K7B321825M-QC65/75» (Memory), manufacturer Samsung. Download datasheet file:
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| Partname | K7B321825M-QC65/75 |
| Description | 1Mx36 Bit Synchronous Pipelined Burst SRAMThe K7A323600M and K7A321800M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.It is organized as 1M(2M) words of 36(18) bits and integrates address and control registers,A 2-bit burst address counter and added some new functions for high performance cache RAM applications; /GW, /BW, /LBO, ZZ. Write cycles are internally self-timed and synchronous. |
| Functional | Memory | | Manufacturer | Samsung semiconductor |  |
| Site | www.samsung.com |
| | | Size | Pages: 0, 247.2Kb |
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