K9K1G08R0B-G,J (Samsung) - 128M x 8 Bit NAND Flash MemoryThe K9K1G08X0B isA 128M(134,217,728) x 8bit NAND Flash Memory withA spare 4.096K(4,194,304)x8bit.Its NAND cell provides the most cost-effective solution for the solid state mass storage market.A program operation can be performed in typically 200µs on the 528-byte page and an erase operation can be performed in typically 2ms onA 16K-byte block. Data in the data register can be read out at 50ns(1.8V device : TBD) cycle time per byte. The I/O pins serve as the ports for addres, NAND Flash

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K9K1G08R0B-G,J (Samsung)

Electronic component documentation (datasheet) «K9K1G08R0B-G,J» (NAND Flash), manufacturer Samsung. Download datasheet file:

Datasheet K9K1G08R0B-G,J manufacturer Samsung

Partname	K9K1G08R0B-G,J
Description	128M x 8 Bit NAND Flash MemoryThe K9K1G08X0B isA 128M(134,217,728) x 8bit NAND Flash Memory withA spare 4.096K(4,194,304)x8bit.Its NAND cell provides the most cost-effective solution for the solid state mass storage market.A program operation can be performed in typically 200µs on the 528-byte page and an erase operation can be performed in typically 2ms onA 16K-byte block. Data in the data register can be read out at 50ns(1.8V device : TBD) cycle time per byte. The I/O pins serve as the ports for addres
Functional	NAND Flash
Manufacturer	Samsung semiconductor
Site	www.samsung.com

Size	Pages: 41, 1.05Mb
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K9K1G08B0B-G,J, K9K1G08R0B-G,J, K9K1G08U0B-G,J

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