SST36VF1601E (SST) - 16 Mbit (x8/x16) Concurrent SuperFlashThe SST36VF1601E and SST36VF1602E are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) withA 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.Featuring high perfor, 16 Mb

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SST36VF1601E (SST)

Electronic component documentation (datasheet) «SST36VF1601E» (16 Mb), manufacturer SST. Download datasheet file:

Datasheet SST36VF1601E manufacturer SST

Partname	SST36VF1601E
Description	16 Mbit (x8/x16) Concurrent SuperFlashThe SST36VF1601E and SST36VF1602E are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) withA 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.Featuring high perfor
Functional	16 Mb
Manufacturer	Silicon Storage Technology, Inc.
Site	www.sst.com

Size	Pages: 35, 410.22Kb
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SST36VF1601E, SST36VF1602E

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