M29W640GL (STMicroelectronics) - Feature summary■ Supply Voltage– VCC = 2.7V to 3.6V for Program, Erase,Read– VPP =12V for Fast Program (optional)■ Asynchronous Random/Page Read– Page Width: 4 Words– Page Access: 25ns– Random Access: 60ns, 70ns■ Fast Program commands– 2 Words/4 Bytes Program (withoutVPP=12V)– 4 Words/8 Bytes Program (with VPP=12V)– 16 Word/32 Byte Write Buffer■ Programming time– 10 μs per Byte/Word typical– Chip Program time: 10s (using 4 WordsProgram)■ Memory organization– M29W640GH/L:12, NVRAM (Non-Volatile RAM)

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M29W640GL (STMicroelectronics)

Electronic component documentation (datasheet) «M29W640GL» (NVRAM (Non-Volatile RAM)), manufacturer STMicroelectronics. Download datasheet file:

Datasheet M29W640GL manufacturer STMicroelectronics

Partname	M29W640GL
Description	Feature summary■ Supply Voltage– VCC = 2.7V to 3.6V for Program, Erase,Read– VPP =12V for Fast Program (optional)■ Asynchronous Random/Page Read– Page Width: 4 Words– Page Access: 25ns– Random Access: 60ns, 70ns■ Fast Program commands– 2 Words/4 Bytes Program (withoutVPP=12V)– 4 Words/8 Bytes Program (with VPP=12V)– 16 Word/32 Byte Write Buffer■ Programming time– 10 μs per Byte/Word typical– Chip Program time: 10s (using 4 WordsProgram)■ Memory organization– M29W640GH/L:12
Functional	NVRAM (Non-Volatile RAM)
Manufacturer	STMicroelectronics
Site	www.st.com

Size	Pages: 0, 703.73Kb
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M29W640GB, M29W640GH, M29W640GL, M29W640GT

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